公开(公告)号：US20090189150A1

公开(公告)日：2009-07-30

申请号：US12219273

申请日：2008-07-18

Applicant: Bang-Lin Lee ,  Kook-min Han ,  Eun-kyung Lee ,  Do-hwan Kim ,  Hyun-sik Moon

Inventor： Bang-Lin Lee ,  Kook-min Han ,  Eun-kyung Lee ,  Do-hwan Kim ,  Hyun-sik Moon

IPC: H01L51/05 ,  C08F28/06 ,  C08F4/44 ,  C08F230/04 ,  C08F4/72

CPC classification number: C08G61/126 ,  C08G61/123 ,  H01B1/127 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: An organic semiconducting copolymer according to example embodiments may be represented by Formula 1 below: An organic electronic device may include the above organic semiconducting copolymer. The organic semiconducting copolymer according to example embodiments may provide improved solubility, processability, and thin film properties. Consequently, the organic semiconducting copolymer may be used in a variety of electronic devices. A suitable electronic device may be an organic thin film transistor. When an active layer of an organic thin film transistor includes the organic semiconducting copolymer, higher charge mobility and lower breaking leakage current may be achieved.

Abstract translation: 根据示例性实施方案的有机半导体共聚物可以由下式1表示：有机电子器件可以包括上述有机半导体共聚物。 根据示例性实施方案的有机半导体共聚物可以提供改善的溶解度，可加工性和薄膜性质。 因此，有机半导体共聚物可用于各种电子器件中。 合适的电子器件可以是有机薄膜晶体管。 当有机薄膜晶体管的有源层包括有机半导体共聚物时，可实现较高的电荷迁移率和较低的断开漏电流。

公开(公告)号：US20090081429A1

公开(公告)日：2009-03-26

申请号：US12042843

申请日：2008-03-05

Applicant: Eun Kyung Lee ,  Jae Ho You ,  Byoung Lyong Choi ,  Seung Ho Nam

Inventor： Eun Kyung Lee ,  Jae Ho You ,  Byoung Lyong Choi ,  Seung Ho Nam

IPC: B32B5/32 ,  B32B33/00 ,  B05D5/06

CPC classification number: B01J23/52 ,  B01J29/0308 ,  B01J2229/186 ,  B82Y20/00 ,  B82Y30/00 ,  G02B2207/107 ,  Y10S428/913 ,  Y10T428/24942 ,  Y10T428/249961 ,  Y10T428/249969 ,  Y10T428/24997 ,  Y10T428/249978 ,  Y10T428/24998 ,  Y10T428/249994

Abstract: Disclosed are an optical film having a graded refractive index and a method of manufacturing the same. The optical film includes one or more antireflection films composed of a mesoporous material having a plurality of pores of a uniform size, and the pores of the mesoporous material are filled with air or a filler having a refractive index different from that of the mesoporous material, and thus the volume ratio of mesoporous material to filler in the pores thereof is controlled, thereby obtaining a desired magnitude of effective refractive index and ensuring a refractive index distribution in which the refractive indexes sequentially change, resulting in high antireflection performance. The method of manufacturing the optical film may be conducted using a nanowire growing technique, thus making it easy to realize mass production.

Abstract translation: 公开了具有渐变折射率的光学膜及其制造方法。 光学膜包括由具有多个尺寸均匀的孔的介孔材料构成的一个或多个抗反射膜，并且中空材料的孔填充有空气或具有与介孔材料的折射率不同的折射率的填料， 从而控制了介孔材料与填料在其孔中的体积比，从而获得有效折射率的期望量值，并确保折射率依次变化的折射率分布，导致高抗反射性能。 可以使用纳米线生长技术进行制造光学膜的方法，从而容易实现批量生产。

公开(公告)号：US20090009057A1

公开(公告)日：2009-01-08

申请号：US12032252

申请日：2008-02-15

Applicant: Eun Kyung LEE ,  Jong Min KIM ,  Byoung Lyong CHOI ,  Kyung Sang CHO

Inventor： Eun Kyung LEE ,  Jong Min KIM ,  Byoung Lyong CHOI ,  Kyung Sang CHO

IPC: H01J1/63 ,  H01L31/0336

CPC classification number: H05B33/22

Abstract: Disclosed herein is a quantum dot optical device, including: a substrate; a hole injection electrode; a hole transport layer; a quantum dot luminescent layer; an electron transport layer; and an electron injection electrode, wherein a light-emitting surface of the device has a periodical projection structure.

Abstract translation: 本发明公开了一种量子点光学装置，包括：基板; 空穴注入电极; 空穴传输层; 量子点发光层; 电子传输层; 和电子注入电极，其中该器件的发光表面具有周期性的投影结构。

公开(公告)号：US20080111129A1

公开(公告)日：2008-05-15

申请号：US11808463

申请日：2007-06-11

Applicant: Eun Jeong Jeong ,  Joo Young Kim ,  Kyung Seok Son ,  Eun Kyung Lee ,  Sang Yoon Lee

Inventor： Eun Jeong Jeong ,  Joo Young Kim ,  Kyung Seok Son ,  Eun Kyung Lee ,  Sang Yoon Lee

IPC: H01L51/30 ,  B05D3/06 ,  B05D5/12 ,  H01L51/40 ,  C08F30/08

CPC classification number: H01L51/052 ,  C08F283/12 ,  C08F290/068 ,  C08G77/12 ,  C08G77/24 ,  C08K5/10 ,  C08L83/04 ,  C08L83/06 ,  H01L51/0036 ,  H01L51/0545

Abstract: Disclosed is a composition for preparing an organic insulator, including an organic silane material, having a vinyl group, an acetylene group or an acryl group as a functional group for participating in a crosslinking reaction, a crosslinking agent, and a solvent for dissolving the above components. The organic insulator of example embodiments may be provided in the form of a solid insulating film, which may increase charge mobility while decreasing the threshold voltage and operating voltage of OTFTs, and which also may generate relatively slight hysteresis.

Abstract translation: 公开了一种制备有机绝缘体的组合物，包括具有乙烯基，乙炔基或丙烯酰基作为参与交联反应的官能团的有机硅烷材料，交联剂和用于溶解上述的溶剂 组件。 示例性实施例的有机绝缘体可以以固体绝缘膜的形式提供，其可以在降低OTFT的阈值电压和操作电压的同时增加电荷迁移率，并且还可以产生相对较小的滞后。

公开(公告)号：US07364940B2

公开(公告)日：2008-04-29

申请号：US11296704

申请日：2005-12-08

Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

IPC: H01L51/40

CPC classification number: H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

Abstract: An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

Abstract translation: 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。 此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

公开(公告)号：US20070108505A1

公开(公告)日：2007-05-17

申请号：US11594966

申请日：2006-11-09

Applicant: Kwang-Soo Seol ,  Byung-Ki Kim ,  Eun-Kyung Lee ,  Yo-Sep Min ,  Kyung-Sang Cho ,  Jae-Ho Lee ,  Jae-Young Choi

Inventor： Kwang-Soo Seol ,  Byung-Ki Kim ,  Eun-Kyung Lee ,  Yo-Sep Min ,  Kyung-Sang Cho ,  Jae-Ho Lee ,  Jae-Young Choi

IPC: H01L29/788 ,  H01L29/792

CPC classification number: H01L29/42332 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/42348

Abstract: A gate structure using nanodots as a trap site, a semiconductor device having the gate structure and methods of fabricating the same are provided. The gate structure may include a tunneling layer, a plurality of nanodots on the tunneling layer, and a control insulating layer including a high-k dielectric layer on the tunneling layer and the nanodots. A semiconductor memory device may further include a semiconductor substrate, the gate structure according to example embodiments on the semiconductor substrate and a first impurity region and a second impurity region in the semiconductor substrate, wherein the gate structure is in contact with the first and second impurity regions.

Abstract translation: 提供了使用纳米点作为陷阱位置的栅极结构，具有栅极结构的半导体器件及其制造方法。 栅极结构可以包括隧道层，隧道层上的多个纳米点，以及在隧道层和纳米点上包括高k电介质层的控制绝缘层。 半导体存储器件还可以包括半导体衬底，半导体衬底上的示例性实施例的栅极结构和半导体衬底中的第一杂质区和第二杂质区，其中栅极结构与第一和第二杂质接触 地区。

公开(公告)号：US20060115916A1

公开(公告)日：2006-06-01

申请号：US11335503

申请日：2006-01-20

Applicant: Eun-kyung Lee ,  Byoung-iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

Inventor： Eun-kyung Lee ,  Byoung-iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC: H01L21/00

CPC classification number: H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

Abstract translation: 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US20050287893A1

公开(公告)日：2005-12-29

申请号：US10875972

申请日：2004-06-24

Applicant: Eun Kyung Lee ,  Edwin Haines ,  Douglas Deans

Inventor： Eun Kyung Lee ,  Edwin Haines ,  Douglas Deans

IPC: B32B5/02 ,  B32B27/04 ,  D03D1/00 ,  D03D13/00 ,  D03D15/00

CPC classification number: B65G15/34 ,  D03D1/00 ,  D03D1/0094 ,  D03D15/00 ,  D03D15/0094 ,  D10B2331/02 ,  D10B2331/04 ,  D10B2505/02 ,  Y10T442/2221 ,  Y10T442/2369 ,  Y10T442/273 ,  Y10T442/2861 ,  Y10T442/2893 ,  Y10T442/3065 ,  Y10T442/3179 ,  Y10T442/3211 ,  Y10T442/322 ,  Y10T442/3301 ,  Y10T442/3317

Abstract: Woven reinforcing fabrics for such conveyor belts characterized by an improved resistance to tearing in the longitudinal or travel direction. The woven reinforcing fabric includes a plurality of weft yarns and a plurality of warp yarns aligned substantially orthogonal to the plurality of weft yarns. The warp yarns are woven through the weft yarns to define a plurality of passages arranged in substantially parallel first and second planes. At least one of the weft yarns is positioned in each of the passages and two of the weft yarns are positioned in at least one of the passages in each of the first and second planes.

Abstract translation: 用于这种输送带的机织加强织物，其特征在于在纵向或行进方向上具有改进的抗撕裂性。 编织增强织物包括多根纬纱和与多根纬纱基本正交的多根经纱。 经纱通过纬纱编织以限定布置在基本上平行的第一和第二平面中的多个通道。 纬纱中的至少一根位于每个通道中，并且两根纬纱位于第一和第二平面中的每一个中的至少一个通道中。

公开(公告)号：US20050074969A1

公开(公告)日：2005-04-07

申请号：US10915538

申请日：2004-08-11

Applicant: Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

Inventor： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

IPC: H01L29/41 ,  H01L21/20 ,  H01L21/265 ,  H01L21/28 ,  H01L21/283 ,  H01L21/285 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/82 ,  H01L21/8238 ,  H01L23/48 ,  H01L23/52 ,  H01L27/04 ,  H01L29/08 ,  H01L29/78

CPC classification number: H01L21/823814 ,  H01L21/26533 ,  H01L21/28506 ,  H01L21/823878 ,  H01L24/05 ,  H01L29/0847 ,  H01L29/78 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.

Abstract translation: 半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层 在衬底中的导电掺杂层下面。

公开(公告)号：US20050073019A1

公开(公告)日：2005-04-07

申请号：US10502765

申请日：2002-10-16

Applicant: Eun-Kyung Lee ,  Byoung-Lyong Choi ,  Jun-Young Kim

Inventor： Eun-Kyung Lee ,  Byoung-Lyong Choi ,  Jun-Young Kim

IPC: H01L31/10 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/042 ,  H01L31/068 ,  H01L31/103 ,  H01L31/06

CPC classification number: H01L31/028 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/103 ,  Y02E10/547

Abstract: A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect for light in a wavelength range of 100-1100 nm is generated by a quantum confinement effect in the p-n junction with the substrate. First and second electrodes are formed on the substrate so as to be electrically connected to the doped region. Due to the ultra-shallow doped region on the silicon substrate, a quantum confinement effect is generated in the p-n junction. Even though silicon is used as a semiconductor material, the quantum efficiency of the silicon light-receiving device is far higher than that of a conventional solar cell, owing to the quantum confinement effect. The silicon light-receiving device can also be formed to absorb light in a particular or large wavelength band, and used as a solar cell.

Abstract translation: 提供硅光接收装置。 在该器件中，衬底基于n型或p型硅。 掺杂区域在衬底的一侧上与衬底的掺杂剂类型相反的掺杂剂超浅掺杂，使得通过量子限制效应产生在100-1100nm的波长范围内的光的光电转换效应 在与基板的pn结中。 第一和第二电极形成在衬底上，以便与掺杂区电连接。 由于硅衬底上的超浅掺杂区域，在p-n结中产生量子限制效应。 即使使用硅作为半导体材料，由于量子限制效应，硅光接收装置的量子效率远远高于常规太阳能电池的量子效率。 硅光接收装置也可以形成为吸收特定或大波长带中的光，并用作太阳能电池。