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    Nano-enabled memory devices and anisotropic charge carrying arrays
    61.
    发明申请
    Nano-enabled memory devices and anisotropic charge carrying arrays 有权
    具有纳米功能的存储器件和各向异性带电载体阵列

    公开(公告)号：US20050201149A1

    公开(公告)日：2005-09-15

    申请号：US11018572

    申请日：2004-12-21

    申请人： Xiangfeng Duan ,  Calvin Chow ,  David Heald ,  Chunming Niu ,  J. Parce ,  David Stumbo

    发明人： Xiangfeng Duan ,  Calvin Chow ,  David Heald ,  Chunming Niu ,  J. Parce ,  David Stumbo

    IPC分类号： G11C16/04 ,  H01L21/28 ,  H01L29/423 ,  H01L29/788

    CPC分类号： G11C11/56 ,  B82Y10/00 ,  G03G5/00 ,  G03G5/02 ,  G03G5/04 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  G03G5/08214 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2216/08 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/7887 ,  Y10S977/936 ,  Y10S977/943

    摘要： Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.

    摘要翻译： 描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。 在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。 纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米的群体包括金属量子点。 隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。 在纳米元件的薄膜上形成栅极接触。 纳米元件允许减少横向电荷转移。 存储器件可以是单个或多个存储器件。 在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了一种用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个 与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。

    Methods for preparing polyvinylidene fluoride composites
    62.
    发明授权
    Methods for preparing polyvinylidene fluoride composites 失效
    制备聚偏二氟乙烯复合材料的方法

    公开(公告)号：US06746627B2

    公开(公告)日：2004-06-08

    申请号：US09988973

    申请日：2001-11-20

    申请人： Chunming Niu ,  Lein Ngaw

    发明人： Chunming Niu ,  Lein Ngaw

    IPC分类号： H01B124

    CPC分类号： C08J3/212 ,  B82Y10/00 ,  B82Y30/00 ,  C08J2327/16 ,  C08K7/24 ,  H01B1/24 ,  Y10S977/742 ,  Y10S977/788 ,  C08L27/16

    摘要： An electrically conductive composite comprising a polyvinylidene fluoride polymer or copolymer and carbon nanotubes is provided. Preferably, carbon nanotubes may be present in the range of about 0.5-20% by weight of the composite. The composites are prepared by mixing or dispersing carbon nanotubes in polymer emulsion using an energy source such as a Waring blender. The liquid in the mixture is then evaporated to obtain the composite comprising the polymer and the nanotubes.

    摘要翻译： 提供了包含聚偏二氟乙烯聚合物或共聚物和碳纳米管的导电复合材料。 优选地，碳纳米管可以以该复合材料的约0.5-20重量％的范围存在。通过使用诸如Waring混合器的能量源将碳纳米管混合或分散在聚合物乳液中来制备复合材料。 然后将混合物中的液体蒸发，得到包含聚合物和纳米管的复合材料。

    Nanostructured Thin Films and Their Uses
    68.
    发明申请
    Nanostructured Thin Films and Their Uses 失效
    纳米结构薄膜及其用途

    公开(公告)号：US20090124034A1

    公开(公告)日：2009-05-14

    申请号：US12121008

    申请日：2008-05-15

    申请人： Chunming Niu ,  R. Hugh Daniels ,  Robert S. Dubrow ,  Jay L. Goldman

    发明人： Chunming Niu ,  R. Hugh Daniels ,  Robert S. Dubrow ,  Jay L. Goldman

    IPC分类号： H01L21/30

    CPC分类号： A61L27/303 ,  A61L31/122 ,  H01J49/0418 ,  Y10S977/701 ,  Y10T428/12736 ,  Y10T428/12743

    摘要： The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.

    摘要翻译： 本发明一般公开了在支撑衬底上使用纳米结构非硅薄膜（例如氧化铝或铝薄膜），随后用诸如硅或钨的材料的活性层涂覆。 底层的非硅材料产生增强的表面积，而活性层有助于在分析物的激光解吸附中用激光照射时，将能量并入和转移到吸附在活性层上的一种或多种分析物。 本发明提供了可以通过相对直接和廉价的制造方法制造的衬底表面，其可用于各种应用，例如质谱，疏水或亲水涂层，医疗器械应用，电子学，催化，保护，数据存储， 光学和传感器。