公开(公告)号：US20080311690A1

公开(公告)日：2008-12-18

申请号：US12061592

申请日：2008-04-02

申请人： Thanh Nghia Tu ,  Qi Luo ,  Chia Wei Yang ,  David Heald ,  Evgeni Gousev ,  Chih-Wei Chiang

发明人： Thanh Nghia Tu ,  Qi Luo ,  Chia Wei Yang ,  David Heald ,  Evgeni Gousev ,  Chih-Wei Chiang

IPC分类号： H01L21/52 ,  G02B26/00 ,  C23C16/00

CPC分类号： B81C1/00476 ,  B81B2201/047

摘要： Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.

摘要翻译： 描述制造微机电系统（MEMS）装置的方法。 在一些实施例中，该方法包括在衬底上形成牺牲层，处理牺牲层的至少一部分以形成经处理的牺牲部分，在经处理的牺牲部分的至少一部分上形成覆盖层，并且至少部分地 去除经处理的牺牲部分以形成位于衬底和上覆层之间的空腔，上覆层暴露于空腔。

公开(公告)号：US20080239449A1

公开(公告)日：2008-10-02

申请号：US12115395

申请日：2008-05-05

申请人： Gang Xu ,  Evgeni Gousev

发明人： Gang Xu ,  Evgeni Gousev

IPC分类号： G02F1/03 ,  G02B26/00

CPC分类号： G02B26/001 ,  B81B2201/047 ,  B81C1/00246

摘要： A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.

摘要翻译： 提出了一种包括金属化半导体的微机电（MEMS）器件。 金属化半导体由于其低电阻率而可用于导体应用，并且由于其半导体性质而可用于晶体管应用。 此外，金属化半导体可以被调谐以具有允许其对于光学MEMS器件有用的光学性质。

公开(公告)号：US20060202279A1

公开(公告)日：2006-09-14

申请号：US11413532

申请日：2006-04-29

申请人： Evgeni Gousev ,  Huiling Shang ,  Christopher D'Emic ,  Paul Kozlowski

发明人： Evgeni Gousev ,  Huiling Shang ,  Christopher D'Emic ,  Paul Kozlowski

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L21/28202 ,  H01L21/02247 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/3143 ,  H01L21/31658 ,  H01L21/318 ,  H01L29/518 ,  Y10S438/906 ,  Y10S438/933

摘要： A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.

公开(公告)号：US07078300B2

公开(公告)日：2006-07-18

申请号：US10672631

申请日：2003-09-27

申请人： Evgeni Gousev ,  Huiling Shang ,  Christopher P. D'Emic ,  Paul M. Kozlowski

发明人： Evgeni Gousev ,  Huiling Shang ,  Christopher P. D'Emic ,  Paul M. Kozlowski

IPC分类号： H01L21/336

CPC分类号： H01L21/28202 ,  H01L21/02247 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/3143 ,  H01L21/31658 ,  H01L21/318 ,  H01L29/518 ,  Y10S438/906 ,  Y10S438/933

摘要： A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.

摘要翻译： 公开了用作栅极电介质的Ge基材料上产生6nm以下等效氧化物厚度薄的锗氮氧化物层的方法。 该方法涉及两步法。 首先，在Ge基材料的表层中加入氮。 其次，氮掺入之后是氧化步骤。 该方法为基于Ge的场效应器件（例如MOS晶体管）的高质量栅极电介质产生优异的厚度控制。 还公开了具有薄氮氧化锗栅电介质的器件的结构和用这种器件制造的处理器。

公开(公告)号：US20060102968A1

公开(公告)日：2006-05-18

申请号：US10988733

申请日：2004-11-15

申请人： Nestor Bojarczuk ,  Cyril Cabral ,  Eduard Cartier ,  Martin Frank ,  Evgeni Gousev ,  Supratik Guha ,  Paul Jamison ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Nestor Bojarczuk ,  Cyril Cabral ,  Eduard Cartier ,  Martin Frank ,  Evgeni Gousev ,  Supratik Guha ,  Paul Jamison ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L29/94

CPC分类号： H01L29/513 ,  H01L21/28194 ,  H01L21/2822 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor structure is provided that includes a Vt stabilization layer between a gate dielectric and a gate electrode. The Vt stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the proviso that when the Vt stabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure.

摘要翻译： 提供了一种半导体结构，其包括在栅极电介质和栅电极之间的V 1稳定层。 VST稳定层能够将结构的阈值电压和平带电压稳定到目标值，并且包括氮化金属氧化物或无氮金属氧化物，条件是当V < 稳定层包括无氮金属氧化物，半导体衬底或栅极电介质中的至少一个包括氮。 本发明还提供一种制造这种结构的方法。

公开(公告)号：US20060022280A1

公开(公告)日：2006-02-02

申请号：US10890753

申请日：2004-07-14

申请人： Cyril Cabral ,  Chester Dziobkowski ,  Sunfei Fang ,  Evgeni Gousev ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri ,  Ghavam Shahidi ,  Michelle Steen ,  Clement Wann

发明人： Cyril Cabral ,  Chester Dziobkowski ,  Sunfei Fang ,  Evgeni Gousev ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri ,  Ghavam Shahidi ,  Michelle Steen ,  Clement Wann

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L29/66507 ,  H01L21/28097 ,  H01L21/823443 ,  H01L29/66545

摘要： An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.

摘要翻译： 提供了一种先进的栅极结构，其包括完全硅化金属栅极和硅化物源极和漏极区域，其中完全硅化金属栅极的厚度大于硅化物源极/漏极区域的厚度。 还提供了形成高级栅极结构的方法，其中在形成硅化金属栅极区之前形成硅化源极和漏极区。

公开(公告)号：US20050156257A1

公开(公告)日：2005-07-21

申请号：US11066762

申请日：2005-02-28

申请人： Nestor Bojarczuk ,  Kevin Chan ,  Christopher D'Emic ,  Evgeni Gousev ,  Supratik Guha ,  Paul Jamison ,  Lars-Ake Ragnarsson

发明人： Nestor Bojarczuk ,  Kevin Chan ,  Christopher D'Emic ,  Evgeni Gousev ,  Supratik Guha ,  Paul Jamison ,  Lars-Ake Ragnarsson

IPC分类号： H01L21/8238 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/513 ,  H01L21/28194

摘要： A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.

公开(公告)号：US20050070122A1

公开(公告)日：2005-03-31

申请号：US10672631

申请日：2003-09-27

申请人： Evgeni Gousev ,  Huiling Shang ,  Christopher D'Emic ,  Paul Kozlowski

发明人： Evgeni Gousev ,  Huiling Shang ,  Christopher D'Emic ,  Paul Kozlowski

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L21/469

CPC分类号： H01L21/28202 ,  H01L21/02247 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/3143 ,  H01L21/31658 ,  H01L21/318 ,  H01L29/518 ,  Y10S438/906 ,  Y10S438/933

摘要： A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.

摘要翻译： 公开了用作栅极电介质的Ge基材料上产生6nm以下等效氧化物厚度薄的锗氮氧化物层的方法。 该方法涉及两步法。 首先，在Ge基材料的表层中加入氮。 其次，氮掺入之后是氧化步骤。 该方法为基于Ge的场效应器件（例如MOS晶体管）的高质量栅极电介质产生优异的厚度控制。 还公开了具有薄氮氧化锗栅电介质的器件的结构和用这种器件制造的处理器。

公开(公告)号：US06642156B2

公开(公告)日：2003-11-04

申请号：US09919970

申请日：2001-08-01

申请人： Evgeni Gousev ,  Atul C. Ajmera ,  Christopher P. D'Emic

发明人： Evgeni Gousev ,  Atul C. Ajmera ,  Christopher P. D'Emic

IPC分类号： H01L21469

CPC分类号： H01L21/02326 ,  H01L21/0214 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/3143 ,  H01L21/3144 ,  H01L29/518

摘要： A method for forming an ultra thin gate dielectric for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes forming an initial nitride layer upon a substrate by rapidly heating the substrate in the presence of an ammonia (NH3) gas, and then re-oxidizing the initial nitride layer by rapidly heating the initial nitride layer in the presence of a nitric oxide (NO) gas, thereby forming an oxynitride layer. The oxynitride layer has a nitrogen concentration therein of at about 1.0×1015 atoms/cm2 to about 6.0×1015 atoms/cm2, and has a thickness which may be controlled within a sub 10 Å range.

摘要翻译： 公开了一种用于形成用于集成电路器件的超薄栅极电介质的方法。 在本发明的一个示例性实施例中，该方法包括通过在氨（NH 3）气体存在下快速加热衬底，然后通过快速加热初始氮化物来再次氧化初始氮化物层，在衬底上形成初始氮化物层 在一氧化氮（NO）气体的存在下形成氮氧化物层。 氧氮化物层的氮浓度为约1.0×10 15原子/ cm 2至约6.0×10 15原子/ cm 2，并且其厚度可控制在亚范围内 。