公开(公告)号：US06602782B2

公开(公告)日：2003-08-05

申请号：US09862937

申请日：2001-05-22

申请人： Myoung-bum Lee ,  Jong-Myeong Lee ,  Byung-hee Kim ,  Gil-heyun Choi

发明人： Myoung-bum Lee ,  Jong-Myeong Lee ,  Byung-hee Kim ,  Gil-heyun Choi

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76882 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a metal interconnects include forming an electrically insulating layer having a contact hole therein, on a substrate. A step is also performed to form an electrically conductive seed layer. The seed layer extends on a sidewall of the contact hole and on a portion of an upper surface of the electrically insulating layer extending adjacent the contact hole. The seed layer is sufficiently thick along an upper portion of the sidewall and sufficiently thin along a lower portion of the sidewall that an upper portion of the contact hole is partially constricted by the seed layer and a constricted contact hole is thereby defined. An anti-nucleation layer is deposited on a portion of the seed layer that extends outside the constricted contact hole. The constricted contact hole is used as a mask to inhibit deposition of the anti-nucleation layer adjacent a bottom of the constricted contact hole. A metal liner is then formed on a portion of the electrically conductive seed layer that defines a sidewall of the constricted contact hole. Next, a metal interconnect layer is reflowed into the constricted contact hole to thereby fill and bury the contact hole.

摘要翻译： 形成金属互连的方法包括在基板上形成其中具有接触孔的电绝缘层。 还进行步骤以形成导电种子层。 种子层在接触孔的侧壁上延伸，并且在邻近接触孔延伸的电绝缘层的上表面的一部分上延伸。 种子层沿着侧壁的上部足够厚，并且沿着侧壁的下部足够薄，接触孔的上部被种子层部分地收缩，从而限定了收缩的接触孔。 在种子层的在收缩的接触孔外延伸的部分上沉积抗成核层。 收缩的接触孔用作掩模以抑制邻接于缩小的接触孔的底部的防着色层的沉积。 然后在导电种子层的限定收缩的接触孔的侧壁的部分上形成金属衬垫。 接下来，将金属互连层回流到收缩的接触孔中，从而填充并埋入接触孔。

公开(公告)号：US06673718B1

公开(公告)日：2004-01-06

申请号：US10305244

申请日：2002-11-27

申请人： Jong-Myeong Lee ,  In-Sun Park ,  Hyeon-Deok Lee ,  Jong-Sik Chun

发明人： Jong-Myeong Lee ,  In-Sun Park ,  Hyeon-Deok Lee ,  Jong-Sik Chun

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76882 ,  H01L2221/1089

摘要： An aluminum wiring is selectively formed within a contact hole or groove of a substrate. An intermediate layer which includes nitrogen is formed over the main surface of a substrate and over the interior surface of the contact hole or groove. A first surface portion of the intermediate layer which is located over the main surface of the substrate is treated with a plasma to form a passivity layer at the first surface portion of the intermediate layer. Then, without an intervening vacuum break, an aluminum film is CAD deposited only over a second surface portion of the intermediate layer which is located over the interior surface of the contact hole or recess. The plasma treatment of the first surface portion of the intermediate layer prevents the CAD deposition of the aluminum film over the first surface portion of the intermediate layer.

摘要翻译： 在基板的接触孔或凹槽内选择性地形成铝布线。 包含氮的中间层形成在基板的主表面上并在接触孔或凹槽的内表面上方。 用等离子体处理位于基板的主表面上方的中间层的第一表面部分，以在中间层的第一表面部分处形成被动层。 然后，没有中间真空断裂，铝膜仅沉积在中间层的位于接触孔或凹槽的内表面上方的第二表面部分上。 中间层的第一表面部分的等离子体处理防止铝膜在中间层的第一表面部分上的CAD沉积。

公开(公告)号：US08889543B2

公开(公告)日：2014-11-18

申请号：US13795807

申请日：2013-03-12

申请人： Jong-Min Baek ,  In-Sun Park ,  Jong-Myeong Lee ,  Jong-Won Hong ,  Hei-Seung Kim ,  Jung-Soo Yoon

发明人： Jong-Min Baek ,  In-Sun Park ,  Jong-Myeong Lee ,  Jong-Won Hong ,  Hei-Seung Kim ,  Jung-Soo Yoon

IPC分类号： H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76885

摘要： A method of fabricating a semiconductor device includes forming switching devices on a substrate. A lower structure is formed in the substrate having the switching devices. A lower conductive layer is formed on the lower structure. Sacrificial mask patterns are formed on the lower conductive layer. Lower conductive patterns are formed by etching the lower conductive layer using the sacrificial mask patterns as an etch mask. An interlayer insulating layer is formed on the substrate having the lower conductive patterns. Interlayer insulating patterns are formed by planarizing the interlayer insulating layer until the sacrificial mask patterns are exposed. Openings exposing the lower conductive patterns are formed by removing the exposed sacrificial mask patterns. Upper conductive patterns self-aligned with the lower conductive patterns are formed in the openings.

摘要翻译： 制造半导体器件的方法包括在衬底上形成开关器件。 在具有开关装置的基板中形成下部结构。 下导电层形成在下结构上。 牺牲掩模图案形成在下导电层上。 通过使用牺牲掩模图案作为蚀刻掩模蚀刻下导电层来形成下导电图案。 在具有较低导电图案的基板上形成层间绝缘层。 通过平坦化层间绝缘层直到牺牲掩模图案曝光来形成层间绝缘图案。 通过去除暴露的牺牲掩模图案来形成露出下导电图案的开口。 在开口中形成与下导电图案自对准的上导电图案。

公开(公告)号：US20100151672A1

公开(公告)日：2010-06-17

申请号：US12711812

申请日：2010-02-24

申请人： Kyung-In Choi ,  Sang-Woo Lee ,  Jong-Myeong Lee ,  Jong-Won Hong ,  Hyun-Bae Lee

发明人： Kyung-In Choi ,  Sang-Woo Lee ,  Jong-Myeong Lee ,  Jong-Won Hong ,  Hyun-Bae Lee

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76846 ,  H01L21/76858 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer.

摘要翻译： 提供形成金属互连结构的方法。 所述方法包括在包括第一金属互连的半导体衬底上形成绝缘层。 图案化绝缘层以形成露出第一金属互连的开口。 在暴露的第一金属互连上形成第一扩散阻挡层。 在形成第一扩散阻挡层之后，在开口中的第一扩散阻挡层上形成第二扩散阻挡层，第二扩散阻挡层与开口的侧壁接触。 第二金属互连形成在第二扩散阻挡层上。

公开(公告)号：US06905960B2

公开(公告)日：2005-06-14

申请号：US10657140

申请日：2003-09-09

申请人： Hong-Mi Park ,  Jong-Sik Chun ,  Hyeon-Deok Lee ,  In-Sun Park ,  Jong-Myeong Lee ,  Ju-Cheol Shin

发明人： Hong-Mi Park ,  Jong-Sik Chun ,  Hyeon-Deok Lee ,  In-Sun Park ,  Jong-Myeong Lee ,  Ju-Cheol Shin

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76877 ,  H01L21/76843 ,  H01L21/76871

摘要： In a method of forming a contact in a semiconductor device, an insulating layer is formed on the semiconductor substrate. Then, a contact hole is formed by selectively etching the insulating layer. A barrier metal layer is deposited on side and bottom surfaces of the contact hole and on a top surface of the insulating layer to a uniform thickness. A wetting layer of an oxidation-resistive metal material is deposited on the barrier metal layer. A metal layer is formed on the wetting layer and fills the contact hole to thereby form a contact in the semiconductor device.

摘要翻译： 在半导体器件中形成接触的方法中，在半导体衬底上形成绝缘层。 然后，通过选择性地蚀刻绝缘层形成接触孔。 阻挡金属层沉积在接触孔的侧表面和底表面上，并且在绝缘层的顶表面上沉积到均匀的厚度。 在阻挡金属层上沉积抗氧化金属材料的润湿层。 在润湿层上形成金属层，并填充接触孔，从而在半导体器件中形成接触。

公开(公告)号：US09355851B2

公开(公告)日：2016-05-31

申请号：US13588393

申请日：2012-08-17

申请人： Jong-Won Hong ,  Hei-Seung Kim ,  Kyoung-hee Nam ,  In-sun Park ,  Jong-Myeong Lee

发明人： Jong-Won Hong ,  Hei-Seung Kim ,  Kyoung-hee Nam ,  In-sun Park ,  Jong-Myeong Lee

IPC分类号： H01L21/762 ,  H01L21/763 ,  H01L21/288 ,  H01L23/532 ,  H01L27/115 ,  H01L21/768 ,  H01L27/108

CPC分类号： H01L21/76879 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11529 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.

摘要翻译： 半导体器件包括填充通过衬底上的绝缘中间层的至少一部分形成并包括铜的沟槽的金属图案，以及金属图案中的包含钽，氮化钽，钛，钛中的至少一种的润湿改善层图案 氮化物，钌，钴和锰。

公开(公告)号：US08124524B2

公开(公告)日：2012-02-28

申请号：US12711812

申请日：2010-02-24

申请人： Kyung-In Choi ,  Sang-Woo Lee ,  Jong-Myeong Lee ,  Jong-Won Hong ,  Hyun-Bae Lee

发明人： Kyung-In Choi ,  Sang-Woo Lee ,  Jong-Myeong Lee ,  Jong-Won Hong ,  Hyun-Bae Lee

IPC分类号： H01L21/4763

CPC分类号： H01L23/5226 ,  H01L21/76846 ,  H01L21/76858 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer.

摘要翻译： 提供形成金属互连结构的方法。 所述方法包括在包括第一金属互连的半导体衬底上形成绝缘层。 图案化绝缘层以形成露出第一金属互连的开口。 在暴露的第一金属互连上形成第一扩散阻挡层。 在形成第一扩散阻挡层之后，在开口中的第一扩散阻挡层上形成第二扩散阻挡层，第二扩散阻挡层与开口的侧壁接触。 第二金属互连形成在第二扩散阻挡层上。

公开(公告)号：US20050035458A1

公开(公告)日：2005-02-17

申请号：US10945992

申请日：2004-09-22

申请人： Jong-Myeong Lee ,  In-Sun Park ,  Jong-Sik Chun

发明人： Jong-Myeong Lee ,  In-Sun Park ,  Jong-Sik Chun

IPC分类号： C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76888 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insulation film including nitrogen, forming a second metal film on a portion of the metal barrier layer in the recess, and forming a third metal film on the substrate, the recess and the insulation film.

公开(公告)号：US06844627B2

公开(公告)日：2005-01-18

申请号：US10367916

申请日：2003-02-19

申请人： Jong-Myeong Lee ,  In-Sun Park ,  Jong-Sik Chun

发明人： Jong-Myeong Lee ,  In-Sun Park ,  Jong-Sik Chun

IPC分类号： C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76888 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insulation film including nitrogen, forming a second metal film on a portion of the metal barrier layer in the recess, and forming a third metal film on the substrate, the recess and the insulation film.

摘要翻译： 一种用于形成金属膜的方法，包括在基板的表面上，在凹部的底表面和凹部的侧壁上形成金属阻挡层，在基板上形成第一金属膜而不在凹部中， 具有氮等离子体的第一金属膜以形成包括氮的绝缘膜，在所述凹部中的所述金属阻挡层的一部分上形成第二金属膜，并在所述基板，所述凹部和所述绝缘膜上形成第三金属膜。

公开(公告)号：US08932964B2

公开(公告)日：2015-01-13

申请号：US13444054

申请日：2012-04-11

申请人： Woo-Jin Lee ,  Ji-Soon Park ,  Jong-Myeong Lee ,  Hyun-Bae Lee

发明人： Woo-Jin Lee ,  Ji-Soon Park ,  Jong-Myeong Lee ,  Hyun-Bae Lee

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/788

CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7881

摘要： A method of forming a dielectric layer, the method including sequentially forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate by performing a plasma-enhanced atomic layer deposition process, wherein a first nitrogen plasma treatment is performed after forming the first oxide layer.

摘要翻译： 一种形成电介质层的方法，所述方法包括通过执行等离子体增强原子层沉积工艺在衬底上顺序地形成第一氧化物层，氮化物层和第二氧化物层，其中第一氮等离子体处理在 形成第一氧化物层。