公开(公告)号：US07709284B2

公开(公告)日：2010-05-04

申请号：US11840057

申请日：2007-08-16

申请人： Michael Iza ,  Hitoshi Sato ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Michael Iza ,  Hitoshi Sato ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/007

摘要： A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50 nm. A multi quantum well (MQW) active layer may be grown at a growth temperature and the LT Mg doped nitride semiconductor thin film may deposited on the MQW active layer at a substrate temperature no greater than 150° C. above the growth temperature.

摘要翻译： 通过沉积低温（LT）镁（Mg）掺杂的氮化物半导体薄膜来生长改进的质量器件的方法。 低温Mg掺杂的氮化物半导体薄膜可以具有大于50nm的厚度。 可以在生长温度下生长多量子阱（MQW）有源层，并且在高于生长温度的衬底温度不超过150℃的温度下，可以将LT Mg掺杂氮化物半导体薄膜沉积在MQW有源层上。

公开(公告)号：US20100066396A1

公开(公告)日：2010-03-18

申请号：US12517040

申请日：2007-03-20

申请人： Kiyotoshi Miura ,  Hitoshi Sato ,  Akihisa Akahira

发明人： Kiyotoshi Miura ,  Hitoshi Sato ,  Akihisa Akahira

IPC分类号： G01R31/02

CPC分类号： G01R31/2889

摘要： An electrical connecting apparatus for use in electrical measurement of a device under test comprises a supporting member and a flat plate-like probe base plate. On one surface of the probe base plate are provided multiple probes abutting on electrical connecting terminals of the device under test undergoing an electrical test. Also, on the other surface of the probe base plate is formed a securing portion provided with a screw hole opened at the top portion. It further has a generally cylindrical spacer and a screw member passing through the spacer and whose tip end is screwed in the screw hole of the securing portion. As for the spacer, movement in the axial direction is restricted in relation to the supporting member by a restricting means. The spacer has a head portion whose underside is mounted on the other surface of the supporting member and a body portion communicating with the head portion at one end, arranged to pass through a through hole formed in the supporting member, and whose other end is arranged to abut on the top face of the securing portion.

摘要翻译： 用于被测设备的电测量的电连接装置包括支撑构件和平板状探针基板。 在探针基板的一个表面上设置有多个探针，它们与经过电气测试的被测器件的电连接端子相邻。 此外，在探针基板的另一个表面上形成有设置有在顶部开口的螺纹孔的固定部。 它还具有通常为圆柱形的间隔件和通过间隔件的螺钉构件，并且其末端拧入固定部分的螺钉孔中。 对于间隔件，通过限制装置相对于支撑构件限制轴向的移动。 间隔件具有头部，其下侧安装在支撑构件的另一个表面上，主体部分在一端与头部连通，布置成穿过形成在支撑构件中的通孔，并且其另一端布置 以抵靠固定部分的顶面。

公开(公告)号：US07667472B2

公开(公告)日：2010-02-23

申请号：US11912872

申请日：2005-05-23

申请人： Kiyotoshi Miura ,  Hidehiro Kiyofuji ,  Yuji Miyagi ,  Shinji Kuniyoshi ,  Hitoshi Sato

发明人： Kiyotoshi Miura ,  Hidehiro Kiyofuji ,  Yuji Miyagi ,  Shinji Kuniyoshi ,  Hitoshi Sato

IPC分类号： G01R31/02 ,  G01R31/26

CPC分类号： G01R31/2889 ,  G01R1/07314 ,  Y10T29/49204

摘要： A probe assembly for use in electrical measurement of a device under test. The probe assembly comprises a plate-like probe base plate with bending deformation produced in a free state without load, and a plurality of probes formed on one face of the probe base plate to project from the face. All the tips of the probes are positioned on the same plane parallel to an imaginary reference plane of the probe base plate.

摘要翻译： 用于被测设备的电测量的探针组件。 探针组件包括在空载状态下产生的具有弯曲变形的板状探针基板，以及形成在探针基板的一个面上的多个探针，以从面部突出。 探针的所有尖端位于平行于探针基板的虚拟参考平面的同一平面上。

公开(公告)号：US20090285254A1

公开(公告)日：2009-11-19

申请号：US12392452

申请日：2009-02-25

申请人： Toru TAKAYAMA ,  Hiroki Nagai ,  Hitoshi Sato ,  Tomoya Satoh ,  Isao Kidoguchi

发明人： Toru TAKAYAMA ,  Hiroki Nagai ,  Hitoshi Sato ,  Tomoya Satoh ,  Isao Kidoguchi

IPC分类号： H01S5/026

CPC分类号： H01S5/32325 ,  H01S5/0224 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/2218 ,  H01S5/3202 ,  H01S5/32316 ,  H01S5/4087

摘要： A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 μm≧W2≧60 μm are satisfied.

摘要翻译： 半导体激光装置在基板上具有红色激光元件和红外激光元件。 红色激光元件具有双异质结构，其中InGaP基或AlGaInP基有源层插入在具有脊的第一导电型包层和第二导电型包覆层之间。 红外激光元件具有双异质结构，其中在第一导电型包覆层和具有脊的第二导电型包覆层之间插入GaAs基或AlGaAs基有源层。 假设形成在第二导电类型包层上的第一电极在垂直于空腔长度方向的方向上具有宽度W1，并且形成在第二导电类型包层上的第二电极在垂直于腔长度的方向上具有宽度W2 方向，满足W1> W2和80mum> = W2> =60μm的关系。

公开(公告)号：US20090250686A1

公开(公告)日：2009-10-08

申请号：US12419119

申请日：2009-04-06

申请人： Hitoshi Sato ,  Hirohiko Hirasawa ,  Roy B. Chung ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Hitoshi Sato ,  Hirohiko Hirasawa ,  Roy B. Chung ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01L33/32 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/02 ,  H01L33/08 ,  Y10S977/755

摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

摘要翻译： 公开了具有560-580nm范围内的峰值发射波长的黄色发光二极管（LED）。 LED在一个或多个III族氮化物基半极平面上生长，并且LED的有源层由包含单量子阱或多量子阱结构的铟（In）组成。 LED量子阱的厚度范围为2-7nm。 还公开了由至少一个半极性黄色LED组成的多色LED或白色LED。

公开(公告)号：US20090246851A1

公开(公告)日：2009-10-01

申请号：US12088152

申请日：2006-09-25

申请人： Hitoshi Sato ,  Yutaka Shoga ,  Shingo Koyama ,  Iyori Shirakura

发明人： Hitoshi Sato ,  Yutaka Shoga ,  Shingo Koyama ,  Iyori Shirakura

IPC分类号： C12N9/00

CPC分类号： C12N9/00 ,  C07K1/34 ,  C12N1/02

摘要： The present invention provides a process for producing an enzyme, which includes recovering an enzyme by microfiltering an enzyme-containing solution, having a cell density of 1% (v/v) or less and an enzyme concentration of 1% (w/v) or more in terms of the amount of proteins, with a cationic surfactant added in an amount of 0.01 to 1% (w/v) to the enzyme-containing solution.

摘要翻译： 本发明提供一种酶的制造方法，其包括通过微细化含有细胞密度为1％（v / v）以下，酶浓度为1％（w / v）的含酶溶液来回收酶， 或更多的蛋白质量，其中阳离子表面活性剂以0.01至1％（w / v）的量加入到含酶溶液中。

公开(公告)号：US20090039367A1

公开(公告)日：2009-02-12

申请号：US12181100

申请日：2008-07-28

申请人： Kenji Iso ,  Hirokuni Asamizu ,  Makoto Saito ,  Hitoshi Sato ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Kenji Iso ,  Hirokuni Asamizu ,  Makoto Saito ,  Hitoshi Sato ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/145 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

摘要翻译： 一种（Al，Ga，In）N基发光二极管（LED），包括与透明底层材料结合的LED的p型表面，以增加p型表面的光提取，其中LED是无基底 膜。

公开(公告)号：US20080094478A1

公开(公告)日：2008-04-24

申请号：US11907869

申请日：2007-10-18

申请人： Hitoshi Sato

发明人： Hitoshi Sato

IPC分类号： H04N5/232

CPC分类号： H04N5/23212 ,  H04N5/23293

摘要： An image capture device according to the present invention includes: an image capture unit that captures an image; a focus control unit that controls a to-be-focused position of the capture unit; a display unit that displays the image; an area specifying unit that specifies a specific area within the image, the specific area including the to-be-focused position configured by the focus control unit; and a display control unit that controls the display unit to allow the specific area to be displayed relatively brighter than the other area within the image.

摘要翻译： 根据本发明的图像捕获装置包括：图像捕获单元，其捕获图像; 焦点控制单元，其控制所述捕获单元的被聚焦位置; 显示图像的显示单元; 区域指定单元，其指定所述图像内的特定区域，所述特定区域包括由所述焦点控制单元配置的所述待聚焦位置; 以及显示控制单元，其控制所述显示单元以允许所述特定区域被显示为比所述图像内的其他区域相对更亮。

公开(公告)号：US20070273861A1

公开(公告)日：2007-11-29

申请号：US11751225

申请日：2007-05-21

申请人： Hitoshi Sato ,  Yasuhito Sasaki ,  Keiji Emoto

发明人： Hitoshi Sato ,  Yasuhito Sasaki ,  Keiji Emoto

IPC分类号： G03B27/58

CPC分类号： G03F7/70858 ,  G03F7/70725

摘要： A stage device including a base, a stage movable portion being movable along said base without contact thereto, an interferometer configured to measure a position of the stage movable portion, at least one of a piping element and a wiring element connected to the stage movable portion, and at least one of a heat insulating material and a heat collecting unit configured to reduce a heat to be transmitted from the piping element or wiring element to a space through which measurement light of the interferometer passes.

摘要翻译： 一种舞台装置，包括基座，舞台可移动部分可沿着所述基座移动而不与其接触;干涉仪，被配置为测量舞台可移动部分的位置，管道元件和连接到舞台可移动部分的配线元件中的至少一个 以及绝热材料和集热单元中的至少一种，其被配置为将从所述管道元件或布线元件传递的热量减少到所述干涉仪的测量光通过的空间。

公开(公告)号：US20070218655A1

公开(公告)日：2007-09-20

申请号：US11655572

申请日：2007-01-19

申请人： Hitoshi Sato ,  John Kaeding ,  Michael Iza ,  Troy Baker ,  Benjamin Haskell ,  Steven DenBaars ,  Shuji Nakamura

发明人： Hitoshi Sato ,  John Kaeding ,  Michael Iza ,  Troy Baker ,  Benjamin Haskell ,  Steven DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/20

CPC分类号： H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

摘要翻译： 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地说，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，沉积In x N 1 Ga 1-x