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90 条记录 (耗时 0.039 秒)

    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
    62.
    发明授权
    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics 失效
    用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复

    公开(公告)号：US07179758B2

    公开(公告)日：2007-02-20

    申请号：US10853771

    申请日：2004-05-25

    申请人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    发明人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    IPC分类号： H01L21/311 ,  H01L21/469 ,  H01L21/31 ,  H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

    DEEP TRENCH CRACKSTOPS UNDER CONTACTS
    67.
    发明申请
    DEEP TRENCH CRACKSTOPS UNDER CONTACTS 失效
    DEEP TRENCH CRACKSTOPS UNDER联系人

    公开(公告)号：US20100200960A1

    公开(公告)日：2010-08-12

    申请号：US12689479

    申请日：2010-01-19

    申请人： Matthew S. Angyal ,  Lawrence A. Clevenger ,  Vincent J. McGahay ,  Satyanarayana V. Nitta ,  Shaoning Yao

    发明人： Matthew S. Angyal ,  Lawrence A. Clevenger ,  Vincent J. McGahay ,  Satyanarayana V. Nitta ,  Shaoning Yao

    IPC分类号： H01L23/544 ,  H01L21/302

    CPC分类号： H01L23/585 ,  H01L29/0657 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： Deep trenches formed beneath contact level in a semiconductor substrate function as crackstops, in a die area or in a scribe area of the wafer, and may be disposed in rows of increasing distance from a device which they are intended to protect, and may be located under a lattice work crackstop structure in an interconnect stack layer. The deep trenches may remain unfilled, or may be filled with a dielectric material or conductor. The deep trenches may have a depth into the substrate of approximately 1 micron to 100 microns, and a width of approximately 10 nm to 10 microns.

    摘要翻译： 形成在半导体衬底的接触电平下方的深沟槽作为裂纹，在晶片的管芯区域或划线区域中起作用，并且可以设置成距它们旨在保护的器件的距离增加的行，并且可以位于 在互连堆叠层中的格子工作裂纹结构下。 深沟槽可以保持未填充，或者可以用介电材料或导体填充。 深沟槽可以具有大约1微米至100微米的衬底的深度和约10nm至10微米的宽度。

    INTERCONNECT STRUCTURES WITH TERNARY PATTERNED FEATURES GENERATED FROM TWO LITHOGRAPHIC PROCESSES
    70.
    发明申请
    INTERCONNECT STRUCTURES WITH TERNARY PATTERNED FEATURES GENERATED FROM TWO LITHOGRAPHIC PROCESSES 审中-公开
    具有由两个光刻过程产生的三维特征的互连结构

    公开(公告)号：US20080284039A1

    公开(公告)日：2008-11-20

    申请号：US11750892

    申请日：2007-05-18

    申请人： Matthew E. Colburn ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

    发明人： Matthew E. Colburn ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L23/53238 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating an interconnect structure for interconnecting a semiconductor substrate to have three distinct patterned structures such that the interconnect structure provides both a low k and high structural integrity. The method includes depositing an interlayer dielectric onto the semiconductor substrate, forming a first pattern within the interlayer dielectric material by a first lithographic process that results in both via features and ternary features being formed in the interconnect structure. The method further includes forming a second pattern within the interlayer dielectric material by a second lithographic process to form line features within the interconnect structure. Hence the method forms the three separate distinct patterned structures using only two lithographic processes for each interconnect level.

    摘要翻译： 一种制造互连结构的方法，用于将半导体衬底互连以具有三个不同的图案化结构，使得互连结构既提供低k和高结构完整性。 该方法包括在半导体衬底上沉积层间电介质，通过第一光刻工艺在层间电介质材料内形成第一图案，该第一光刻工艺导致在互连结构中形成通孔特征和三元特征。 该方法还包括通过第二光刻工艺在层间电介质材料内形成第二图案以在互连结构内形成线特征。 因此，该方法仅对每个互连级别仅使用两个光刻工艺形成三个独立的不同图案结构。