Manufacturing method of semiconductor laser diode
    61.
    发明授权
    Manufacturing method of semiconductor laser diode 有权
    半导体激光二极管的制造方法

    公开(公告)号:US06821801B1

    公开(公告)日:2004-11-23

    申请号:US10777071

    申请日:2004-02-13

    IPC分类号: H01L2100

    摘要: The invention provides a manufacturing method of a laser diode having buried grown layer with less crystal defects and with low consumption power and having high reliability in a buried heterostructure laser diode using an InGaAlAs type material as an active layer, by preventing the inhibition of burying and regrowing of the active layer caused by oxidation of Al contained in the active layer. A manufacturing method of a semiconductor laser diode and the active layer comprises a material at least containing Al and having a buried hetero-cross sectional structure, formation of the buried heterostructure, comprising the steps of fabricating the active layer into a stripe shape or mesa shape by etching including at least wet etching, cleaning the stripe-shape sidewall of the core layer with a gas containing chlorine or other halogen element in a crystal growing apparatus and burying the active layer in the semiconductor.

    摘要翻译: 本发明提供了一种激光二极管的制造方法,其具有埋入生长层,其具有较少的晶体缺陷和低功耗,并且在使用InGaAlAs型材料作为有源层的掩埋异质结构激光二极管中具有高可靠性,通过防止掩埋和 一种半导体激光二极管和有源层的制造方法,包括至少包含Al并具有埋入异质截面结构的材料,形成埋入异质结构 包括以下步骤:通过至少包括湿法蚀刻的蚀刻将活性层制成条形或台面形状,在晶体生长装置中用含氯或其它卤素元素的气体清洗芯层的条状侧壁,并将其埋入 半导体中的有源层。

    Wavelength tunable laser and optical device
    63.
    发明授权
    Wavelength tunable laser and optical device 失效
    波长可调激光器和光学器件

    公开(公告)号:US06700910B1

    公开(公告)日:2004-03-02

    申请号:US09503740

    申请日:2000-02-15

    IPC分类号: H01S500

    摘要: In order to form a wavelength tunable laser capable of tuning a wave over a wide range by simple control means, a thin film heater is mounted either over an upper electrode of a ridge waveguide semiconductor laser having ridge waveguides on a semiconductor substrate or over the semiconductor substrate and on both sides of the ridge waveguide with a gap of a few &mgr;m. By controlling a current passed to the thin film heater, the oscillation wavelength of the semiconductor laser is tuned. In the case where the thin film heater is mounted over an upper electrode of a ridge waveguide, a nonconductor is formed on both sides of the ridge conductor to more efficiently enable heat from the heater to reach an active layer of the ridge waveguide more efficiently.

    摘要翻译: 为了形成能够通过简单的控制装置在宽范围内调谐波长的波长可调激光器,薄膜加热器安装在半导体衬底上或半导体衬底上的具有脊波导的脊波导半导体激光器的上电极 基板和脊波导的两侧,间隙为几毫米。 通过控制流过薄膜加热器的电流,调整半导体激光器的振荡波长。 在薄膜加热器安装在脊波导的上电极的情况下,在脊导体的两侧形成非导体,以更有效地使来自加热器的热量更有效地到达脊波导的有源层。

    Process for producing composite laminate comprising insert part and
injection-molded part
    66.
    发明授权
    Process for producing composite laminate comprising insert part and injection-molded part 失效
    用于生产复合层压板的方法,其包括插入部分和注塑部件

    公开(公告)号:US4957677A

    公开(公告)日:1990-09-18

    申请号:US244106

    申请日:1988-09-14

    IPC分类号: B29C45/14 C08J5/12

    CPC分类号: C08J5/124 B29C45/14311

    摘要: A process for producing a composite laminate comprising a insert part and an injection-molded resin part by coating the insert part with a primer comprising a copolymer aqueous emulsion having a glass transition point of not higher than 20.degree. C. which is obtained by emulsion polymerization of a monomer mixture consisting mainly of (a) from 35 to 75% by weight of an alkyl acrylate having from 1 to 8 carbon atoms in the alkyl moiety thereof, (b) from 10 to 50% by weight of an alkyl methacrylate having from 1 to 4 carbon atoms in the alkyl moiety thereof, (c) up to 15% by weight of styrene and/or acrylonitrile, the sum of the (b) and (c) components ranging from 15 to 55% by weight, (d) up to 5% by weight of a vinyl monomer selected from the group consisting of an .alpha.,.beta.-unsaturated acid or an anhydride thereof, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, (meth)acrylamide, and methylol(meth)acrylamide, and (e) up to 30% by weight of other vinyl monomer(s), drying the primer, inserting the insert part into a cavity of an injection mold, injecting a molten resin into the cavity to thereby unite the insert part and the injected resin molded part into one body. The composite laminate is resistant to thermal shocks or electrical shocks.

    摘要翻译: 一种复合层叠体的制造方法,其特征在于,通过用包含通过乳液聚合得到的玻璃化转变温度不高于20℃的共聚物水乳液的底漆涂布所述嵌入部分来形成包含插入部和注射成型树脂部的复合层叠体 的主要由(a)35至75重量%的其烷基部分中具有1至8个碳原子的丙烯酸烷基酯组成的单体混合物,(b)10至50重量%的具有 (c)至多15重量%的苯乙烯和/或丙烯腈,(b)和(c)组分之和为15至55重量%,(d )至多5重量%的选自α,β-不饱和酸或其酸酐的乙烯基单体,(甲基)丙烯酸2-羟乙酯,(甲基)丙烯酸2-羟丙酯,(甲基)丙烯酰胺, 和羟甲基(甲基)丙烯酰胺,和(e)至多30重量%的其它乙烯基单体,干燥 底漆,将插入部件插入到注射模具的空腔中,将熔融树脂注入到空腔中,从而将插入部件和注入的树脂模制部件组合成一体。 复合层压板耐热冲击或电击。

    Manufacturing process for plate or forging of ferrite-austenite
two-phase stainless steel
    67.
    发明授权
    Manufacturing process for plate or forging of ferrite-austenite two-phase stainless steel 失效
    铁素体 - 奥氏体两相不锈钢板或锻造的制造工艺

    公开(公告)号:US4659397A

    公开(公告)日:1987-04-21

    申请号:US646896

    申请日:1984-08-31

    CPC分类号: C21D8/005 C22C38/40

    摘要: This invention relates to a manufacturing process for plate or forging (bar, stamp work or the like) of ferrite-austenite two-phase stainless steel, containing C at 0.03% or below, Si at 2.0% or below, Mn at 2.0% or below, Cr at 25 to 35%, Ni at 6 to 15%, N at 0.35% or below, and Fe and inevitable impurity for the remainder with or without adding B at 0.001 to 0.030% with the following nickel balance value specified at -3 to -9 and comprising an average crystal grain size at 0.015 mm or below from heating an ingot of the above mentioned ferrite-austenite two-phase stainless steel at 1,200.degree. C. or below and keeping a forging ratio by hot working at 5 or over.Ni balance value=Ni %+0.5 Mn %+30.times.(C+N) %-1.1(Cr %+1.5 Si %)+8.2

    摘要翻译: 本发明涉及含有0.03%以下的C,2.0%以下的Si,2.0%以下的Mn的铁素体 - 奥氏体相两相不锈钢的板或锻造(钢筋,冲压加工等)的制造方法, 25%〜35%的Cr,6〜15%的Ni,0.35%以下的N,Fe和不可避免的杂质,其余有或没有添加B为0.001〜0.030%,以下的镍平衡值规定为: 在上述铁素体 - 奥氏体相两相不锈钢锭的1200℃或更低温度下加热锭子的平均晶粒尺寸为0.015mm或更小,并且通过热加工保持锻压比为5或 过度。 Ni平衡值= Ni%+ 0.5 Mn%+ 3​​0x(C + N)%-1.1(Cr%+ 1.5Si%)+ 8.2

    Method of automatically adjusting focus conditions
    68.
    发明授权
    Method of automatically adjusting focus conditions 失效
    自动调整焦点条件的方法

    公开(公告)号:US4453818A

    公开(公告)日:1984-06-12

    申请号:US446255

    申请日:1982-12-02

    IPC分类号: G03B13/36 G02B7/38 G03B3/10

    CPC分类号: G03B3/10

    摘要: A method of automatically adjusting focus conditions of photographic optical system is disclosed. In the method at least a part of optical image formed on a predetermined focal plane by an optical system is projected onto first and second photocell arrays in the front and the rear of a surface conjugated to the predetermined focal plane, and onto at least one of other photocell arrays arranged between the first and second photocell arrays. Outputs of first, second and other photocell arrays are arithmetically operated in accordance with respective given evaluation functions thereby obtaining first, second and other evaluation values. These evaluation values are compared with each other and the optical system is intermittently shifted in the optical axis direction with first or second moving step in the case of decision from the compared result that the optical system is positioned within or outside a predetermined range including the in-focused position.

    摘要翻译: 公开了一种自动调整照相光学系统的聚焦条件的方法。 在该方法中,通过光学系统在预定焦平面上形成的光学图像的至少一部分被投影到与预定焦平面共轭的表面的前后的第一和第二光电池阵列上,并且至少一个 布置在第一和第二光电池阵列之间的其它光电池阵列。 第一,第二和其它光电管阵列的输出根据各自给定的评估功能进行算术运算,从而获得第一,第二和其它评估值。 将这些评估值相互比较,并且在从比较结果判定出光学系统位于包含in的预定范围内或之外的情况下,通过第一或第二移动步骤在光轴方向间歇地移动光学系统 聚焦位置。

    Picture image information band compression and transmission system
    69.
    发明授权
    Picture image information band compression and transmission system 失效
    图像信息带压缩和传输系统

    公开(公告)号:US4070694A

    公开(公告)日:1978-01-24

    申请号:US643383

    申请日:1975-12-22

    CPC分类号: H04N1/415 G06T9/005 H04N1/417

    摘要: A picture image information band compression and transmission process includes the steps of providing one set of three scanning lines making information of the first scanning line of each one set as an estimation scanning line, estimating a picture element to be estimated by four consecutive picture elements, preparing estimated picture image informations, and translating the estimation reference scanning line and two estimated picture image information into run length codes and into mode codes, respectively, and compressing and transmitting the run length codes.

    摘要翻译: 图像信息带压缩和发送处理包括以下步骤:提供一组三条扫描线,使得每一组的第一扫描线的信息作为估计扫描线,估计要由四个连续的图像元素估计的像素, 准备估计图像信息,并将估计参考扫描线和两个估计图像信息分别转换成游程长度代码并转换成模式代码,并压缩和传送游程长度代码。

    Light-emitting device, light-receiving device and method of manufacturing the same
    70.
    发明授权
    Light-emitting device, light-receiving device and method of manufacturing the same 有权
    发光装置,光接收装置及其制造方法

    公开(公告)号:US08680553B2

    公开(公告)日:2014-03-25

    申请号:US13129115

    申请日:2009-10-21

    IPC分类号: H01L33/34

    摘要: An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

    摘要翻译: 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管,并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管,其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗,由硅制成的薄半导体层 ,锗或锗锗与锗发光层的两端相邻连接,薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度,薄型半导体层的另一端与 以高浓度掺杂有杂质的厚电极,电极被掺杂成ap型和n型,形成波导以不与电极直接接触,并且在波导的端部形成反射镜 。