公开(公告)号：US09165784B2

公开(公告)日：2015-10-20

申请号：US13428212

申请日：2012-03-23

申请人： Eiichi Nishimura ,  Masato Kushibiki ,  Fumiko Yamashita

发明人： Eiichi Nishimura ,  Masato Kushibiki ,  Fumiko Yamashita

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01L21/3065

摘要： Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a C4F6 gas and a methane gas. Subsequently, a reactive product generated by the etching and deposited on an inner surface of the hole of the oxide film is ashed with plasma generated from a processing gas containing an oxygen gas, and the etching and the ashing processes are repeated in sequence.

摘要翻译： 公开了一种当在氧化物膜上形成高纵横比孔或沟槽时能够防止蚀刻速率劣化的衬底处理方法。 当通过使用具有开口的硅制成的硬掩模层蚀刻在晶片上形成的氧化膜，在氧化物膜上形成高纵横比的孔或沟槽时，使用等离子体 处理含有C4F6气体和甲烷气体的气体。 随后，通过蚀刻生成并沉积在氧化膜的孔的内表面上的反应产物用从含有氧气的处理气体产生的等离子体等离子化，并且依次重复蚀刻和灰化过程。

公开(公告)号：US08815495B2

公开(公告)日：2014-08-26

申请号：US12877218

申请日：2010-09-08

申请人： Masato Kushibiki ,  Eiichi Nishimura

发明人： Masato Kushibiki ,  Eiichi Nishimura

IPC分类号： G03F7/40 ,  H01L21/02 ,  G03F7/039 ,  H01L21/033 ,  H01L21/311 ,  G03F7/20 ,  G03F7/004 ,  H01L21/316 ,  H01L21/314

CPC分类号： G03F7/20 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/31608

摘要： A disclosed mask pattern forming method includes isotropically coating a surface of a resist pattern array having a predetermined line width with a silicon oxide film, embedding a gap in the resist pattern array coated by the silicon oxide film with a carbon film, removing the carbon film from the upper portion and etching back the carbon film while leaving the carbon film within the gap in any order, removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness in any order, and forming a first mask pattern array which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width, and arranged interposing a space width substantially the same as the predetermined line width with an asking process provided to the resist pattern array exposed from the removed silicon oxide film.

摘要翻译： 所公开的掩模图案形成方法包括用氧化硅膜均匀地涂布具有预定线宽的抗蚀剂图案阵列的表面，在由氧化硅膜涂覆的抗蚀剂图案阵列中用碳膜包埋间隙，除去碳膜 从上部开始蚀刻碳膜，同时以任何顺序将碳膜留在间隙内，除去剩余的碳膜并将抗蚀剂图案阵列的上部蚀刻回任何顺序具有预定的膜厚度，并且形成 具有预定宽度的中心部分的第一掩模图案阵列和夹着预定宽度的膜侧壁部分，并且布置有与预定线宽基本相同的空间宽度，并提供给从 去除氧化硅膜。

公开(公告)号：US08491805B2

公开(公告)日：2013-07-23

申请号：US13019602

申请日：2011-02-02

申请人： Masato Kushibiki ,  Eiichi Nishimura

发明人： Masato Kushibiki ,  Eiichi Nishimura

IPC分类号： C03C15/00

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137 ,  H01L21/67069

摘要： A semiconductor device manufacturing method includes a plasma etching step for etching an etching target film formed on a substrate accommodated in a processing chamber. In the plasma etching step, a processing gas including a gaseous mixture containing predetermined gases is supplied into the processing chamber, and a cycle including a first step in which a flow rate of at least one of the predetermined gases is set to a first value during a first time period and a second step in which the flow rate thereof is set to a second value that is different from the first value during a second time period is repeated consecutively at least three times without removing a plasma. The first time period and the second time period are set to about 1 to 15 seconds.

摘要翻译： 半导体器件制造方法包括：等离子体蚀刻步骤，用于蚀刻形成在容纳在处理室中的衬底上的蚀刻靶膜。 在等离子体蚀刻步骤中，将包含预定气体的气体混合物的处理气体供给到处理室，并且包括第一步骤的循环，其中将至少一个预定气体的流量设定为第一值 第一时间段和第二步骤，其中将流量设定为在第二时间段内与第一值不同的第二值连续重复至少三次而不去除等离子体。 第一时间段和第二时间段被设定为约1至15秒。

公开(公告)号：US08377721B2

公开(公告)日：2013-02-19

申请号：US12141395

申请日：2008-06-18

申请人： Tsuyoshi Shibata ,  Eiichi Nishimura

发明人： Tsuyoshi Shibata ,  Eiichi Nishimura

IPC分类号： H01L21/00 ,  G06F19/00 ,  G01L21/30

CPC分类号： H01L21/67184 ,  H01L21/31144 ,  H01L21/67178 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing system includes a resist pattern forming apparatus including modules each configured to perform a predetermined process on a substrate with an underlying film formed thereon, an etched pattern forming apparatus including chambers each configured to perform patterning of the underlying film by use of a resist pattern as a mask, and examination devices configured to perform measurement and examination of a pattern attribute rendered on a substrate after a process in the resist pattern forming apparatus and after a process in the etched pattern forming apparatus. A controller is preset to utilize measurement results and transfer data to calculate correction value ranges respectively settable in the modules and the chambers and to determine combinations of the modules and the chambers such that corrections made within the correction value ranges cause a pattern attribute to approximate a predetermined value for each of the substrates.

摘要翻译： 衬底处理系统包括抗蚀剂图案形成设备，其包括各自被配置为在其上形成有底层膜的衬底上执行预定处理的模块，蚀刻图案形成设备包括各自被构造成通过使用抗蚀剂来执行底层膜的图案化的腔室 图案作为掩模，以及检查装置，被配置为在抗蚀剂图案形成装置中的处理之后和蚀刻图案形成装置中的处理之后，对在基板上呈现的图案属性进行测量和检查。 预设控制器以利用测量结果和传送数据来计算分别可设置在模块和室中的校正值范围，并且确定模块和室的组合，使得在校正值范围内进行的校正导致模式属性近似于 每个基板的预定值。

公开(公告)号：US08353986B2

公开(公告)日：2013-01-15

申请号：US11391390

申请日：2006-03-29

申请人： Yoshiaki Sasaski ,  Yusuke Muraki ,  Eiichi Nishimura ,  Yuko Ono

发明人： Yoshiaki Sasaski ,  Yusuke Muraki ,  Eiichi Nishimura ,  Yuko Ono

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67742 ,  C23C16/4412 ,  C23C16/54 ,  H01L21/67017

摘要： In a substrate processing apparatus comprising a processing unit where a specific type of processing is executed on a wafer and a transfer chamber through which a wafer is carried into/out of the processing unit, the transfer chamber includes an air intake unit through which external air is drawn into the transfer chamber, a discharge unit disposed so as to face opposite the air intake unit, through which the discharge gas in the transfer chamber is discharged and a discharge gas filtering means disposed at the discharge unit and constituted with a harmful constituent eliminating filter through which a harmful constituent contained in the discharge gas, at least, is eliminated.

摘要翻译： 在包括处理单元的基板处理设备中，其中在晶片上执行特定类型的处理和通过晶片被输送到处理单元的传送室，传送室包括进气单元，通过该进气单元， 被抽吸到传送室中，排出单元设置成与进气单元相对，排气口中的排出气体通过排出单元排出，排出气体过滤装置设置在排出单元处，并且构成消除有害成分 至少消除了排出气体中含有的有害成分的过滤器。

公开(公告)号：US08329050B2

公开(公告)日：2012-12-11

申请号：US12545144

申请日：2009-08-21

申请人： Takashi Sone ,  Eiichi Nishimura

发明人： Takashi Sone ,  Eiichi Nishimura

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L21/31144 ,  H01L21/0206 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138

摘要： A substrate processing method for processing a substrate, on which a processing target layer, an intermediate layer, and a mask layer having an opening to expose a part of the intermediate layer are stacked in this order, includes a shrink etching step. In the shrink etching step, an opening width of the opening of the mask layer is reduced by depositing deposits on a sidewall surface thereof by a plasma generated from a gaseous mixture of depositive gas expressed by a general formula CxHyFz (x, y and z being positive integers) and SF6 gas. Also, there is formed in the intermediate layer an opening having an opening width corresponding to the reduced opening width of the opening of the mask layer by etching the intermediate layer.

摘要翻译： 包括用于处理基板的基板处理方法，其中具有处理目标层，中间层和具有用于暴露中间层的一部分的开口的掩模层的顺序包括收缩蚀刻步骤。 在收缩蚀刻步骤中，通过用由通式C x H y F z（x，y和z表示）的沉积气体的气体混合物产生的等离子体沉积在其侧壁表面上的沉积物来减小掩模层的开口的开口宽度 正整数）和SF6气体。 此外，在中间层中形成有通过蚀刻中间层而具有对应于掩模层的开口的开口宽度减小的开口宽度的开口。

公开(公告)号：US20120270406A1

公开(公告)日：2012-10-25

申请号：US13446006

申请日：2012-04-13

申请人： Shigeru Tahara ,  Eiichi Nishimura

发明人： Shigeru Tahara ,  Eiichi Nishimura

IPC分类号： B08B7/00 ,  H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/32853

摘要： A plasma processing apparatus in which a cleaning method is performed includes a plasma generating chamber, having a silicon-containing member, for generating therein plasma by exciting a processing gas; a plasma processing chamber communicating with the plasma generating chamber via a partition member; and a high frequency antenna, having a planar shape, provided at an outside of a dielectric window of the plasma generating chamber. The cleaning method includes exciting a hydrogen-containing processing gas into plasma in the plasma generating chamber, introducing hydrogen radicals in the plasma into the plasma processing chamber through the partition member, performing a plasma process on a processing target substrate by allowing the hydrogen radicals to act on the processing target substrate, unloading the processing target substrate, and removing silicon-based deposits generated in the plasma generating chamber by introducing a tetrafluoride (tetrafluoromethane) gas into the plasma generating chamber.

摘要翻译： 其中执行清洁方法的等离子体处理装置包括：具有含硅构件的等离子体产生室，用于通过激发处理气体在其中产生等离子体; 等离子体处理室，其经由分隔构件与等离子体产生室连通; 以及设置在等离子体发生室的电介质窗口的外侧的具有平面形状的高频天线。 清洗方法包括在等离子体发生室中激发含氢处理气体进入等离子体，通过分隔构件将等离子体中的氢自由基引入等离子体处理室中，通过使氢自由基进入等离子体处理工艺 作用于处理对象基板，卸载处理对象基板，以及通过将四氟（四氟甲烷）气体引入到等离子体产生室中来除去在等离子体发生室中产生的硅基沉积物。

公开(公告)号：US20120244716A1

公开(公告)日：2012-09-27

申请号：US13425551

申请日：2012-03-21

申请人： Takashi Sone ,  Eiichi Nishimura

发明人： Takashi Sone ,  Eiichi Nishimura

IPC分类号： H01L21/308

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/32091 ,  H01L43/12

摘要： There is provided a substrate processing method capable of etching a layer containing, at least, platinum without using a halogen gas. When etching the platinum-manganese layer on a wafer W by using a tantalum (Ta) layer 38 having a certain pattern shape, a processing gas containing, at least, a carbon monoxide gas, a hydrogen gas, and a rare gas is used, and a ratio of a gas flow rate of the hydrogen gas to a total gas flow rate of the carbon monoxide gas and the hydrogen gas is in a range of from about 50% to about 75%.

摘要翻译： 提供了能够在不使用卤素气体的情况下蚀刻至少含有铂的层的基板处理方法。 当通过使用具有一定图案形状的钽（Ta）层38来蚀刻晶圆W上的铂 - 锰层时，使用至少含有一氧化碳气体，氢气和稀有气体的处理气体， 并且氢气的气体流量与一氧化碳气体和氢气的总气体流量的比率在约50％至约75％的范围内。

公开(公告)号：US08273258B2

公开(公告)日：2012-09-25

申请号：US12651519

申请日：2010-01-04

申请人： Takashi Sone ,  Eiichi Nishimura

发明人： Takashi Sone ,  Eiichi Nishimura

IPC分类号： C03C15/00 ,  B44C1/22

CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/40 ,  G03F7/427 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139

摘要： A disclosed fine pattern forming method includes steps of: forming patterns made of a first photoresist film, arranged at a first pitch on a film; trimming the patterns made of the first photoresist film; depositing a protection film on the patterns made of the first photoresist film on the trimmed patterns made of the first photoresist film, the protection film being made of reaction products of an etching gas, thereby obtaining first patterns; forming other patterns made of a second photoresist film, arranged at a second pitch, on the protection film, the other patterns made of the second photoresist film being shifted by half of the first pitch from the corresponding patterns made of the first photoresist film; trimming the other patterns made of the second photoresist film into second patterns; and etching the film using the first patterns and the second patterns.

摘要翻译： 所公开的精细图案形成方法包括以下步骤：在膜上形成以第一间距布置的由第一光致抗蚀剂膜制成的图案; 修整由第一光致抗蚀剂膜制成的图案; 在由第一光致抗蚀剂膜制成的修剪图案上的由第一光致抗蚀剂膜制成的图案上形成保护膜，保护膜由蚀刻气体的反应产物制成，从而获得第一图案; 在保护膜上形成由第二间距布置的第二光致抗蚀剂膜制成的其它图案，由第二光致抗蚀剂膜制成的其它图案从由第一光致抗蚀剂膜制成的相应图案偏移了第一间距的一半; 将由第二光致抗蚀剂膜制成的其它图案修剪成第二图案; 并使用第一图案和第二图案蚀刻薄膜。

公开(公告)号：US08252698B2

公开(公告)日：2012-08-28

申请号：US12558047

申请日：2009-09-11

申请人： Masato Kushibiki ,  Eiichi Nishimura

发明人： Masato Kushibiki ,  Eiichi Nishimura

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

摘要： In a substrate processing method of processing a substrate in which a processing target layer, an intermediate layer, and a mask layer are stacked one on top of another, the mask layer having an opening that partially exposes the intermediate layer, a thickness of the mask layer is increased by depositing deposits on an upper surface of the mask layer with plasma generated from a mixed gas of SF6 gas and a depositive gas represented in a general equation, CxHyFz (where, x, y, and z are positive integers).

摘要翻译： 在其中处理目标层，中间层和掩模层层叠在一起的衬底的衬底处理方法中，具有部分地暴露中间层的开口的掩模层，掩模的厚度 通过在SF6气体和通式（C x H y F z（其中x，y和z是正整数）表示的沉积气体的混合气体产生的等离子体中，在掩模层的上表面上沉积沉积物来增加层。