公开(公告)号：US07939614B2

公开(公告)日：2011-05-10

申请号：US10594221

申请日：2005-05-10

申请人： Takashi Sueyoshi ,  Ken-Ichiro Hiwatari ,  Tadashi Janado ,  Yoshikazu Shoji ,  Yoshitaka Sugawara

发明人： Takashi Sueyoshi ,  Ken-Ichiro Hiwatari ,  Tadashi Janado ,  Yoshikazu Shoji ,  Yoshitaka Sugawara

IPC分类号： C08G77/04 ,  C08G77/12 ,  C08G77/14 ,  C08G77/20

CPC分类号： C08L83/04 ,  C08G77/12 ,  C08G77/14 ,  C08G77/18 ,  C08G77/20 ,  C08G77/70 ,  C08L83/00

摘要： A curable composition which comprises at least one of the following (A), (B), and (C) and further contains (D) (provided that when (C) is not contained, both (A) and (B) are in the composition. (A): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′ and one or more Si—O—Si bonds. (B): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has an Si—H group and one or more Si—O—Si bonds. (C): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′, an Si—H group, and one or more Si—O—Si bonds. (D): A catalyst for curing reaction which is a platinum catalyst. The reactive group A′ is any of Si—R1, Si—O—R2, and Si—R3—OCOC(R4)═CH2, provided that R1 and R2 each is alkenyl, R3 is alkylene and/or arylene, and R4 is hydrogen or methyl.

摘要翻译： 一种可固化的组合物，其包含以下的（A）中的至少一种，（B），和（C），还含有（D）（条件是当（C）不包含，无论（A）和（B）是在 该组合物（A）：含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其中有一个反应性基团A'和一个或多个SI- O-Si键（B）：A含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其具有Si-H基和一个或多个 Si-O-Si键（C）：其中重均分子量为1,000以下的成分的含量为20重量％以下且具有反应性基团A'的含硅聚合物， Si-H基和一个或多个Si-O-Si键;（D）：作为铂催化剂的用于固化反应的催化剂，反应性基团A'是Si-R 1，Si-O-R 2和 的Si-R3 OCOC（R 4）═CH2，条件是R1和R2各自是链烯基，R 3是亚烷基和/或亚芳基，并且R 4是氢或甲基。

公开(公告)号：US20100261333A1

公开(公告)日：2010-10-14

申请号：US12801680

申请日：2010-06-21

申请人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

发明人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

IPC分类号： H01L21/04 ,  H01L21/304

CPC分类号： H01L29/868 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/73 ,  H01L29/7397

摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

公开(公告)号：US07768017B2

公开(公告)日：2010-08-03

申请号：US10581247

申请日：2004-12-01

申请人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

发明人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/868 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/73 ,  H01L29/7397

摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

摘要翻译： 为了防止由于使用碳化硅半导体的双极性半导体器件随时间的变化引起的正向电压的增加，缓冲层，漂移层和其他p型和n型半导体层形成在 生长表面，其由具有偏角角度的硅碳化物半导体的晶体的表面给出; （000-1）碳表面8度，以每小时薄膜增加率为10μm/小时的膜生长速率，比常规对应物高3倍以上。 硅烷和丙烷材料气体和掺杂气体的流速大大增加，以提高膜生长速率。

公开(公告)号：US20100150202A1

公开(公告)日：2010-06-17

申请号：US12088270

申请日：2006-09-28

申请人： Katsunori Asano ,  Yoshitaka Sugawara

发明人： Katsunori Asano ,  Yoshitaka Sugawara

IPC分类号： G01N25/18 ,  G01K3/00

CPC分类号： G01K7/01 ,  G01K7/346

摘要： In the temperature measurement method for semiconductor devices, a junction temperature of a SiC GTO is determined by exploiting large temperature dependence of accumulation time ts as turn-OFF characteristic time of the SiC GTO that is a semiconductor switching element. The accumulation time ts is a time duration lasting from rise start time t1 of a gate turn-OFF current Ig until decay start time t2 of an anode current Ia. In this temperature measurement method, measured turn-OFF characteristic time is converted into a junction temperature of the SiC GTO based on relational characteristics between preliminarily measured accumulation time ts and junction temperatures.

摘要翻译： 在半导体器件的温度测量方法中，通过利用作为半导体开关元件的SiC GTO的截止特征时间的累积时间ts的大的温度依赖性来确定SiC GTO的结温。 累积时间ts是从栅极截止电流Ig的上升开始时刻t1到阳极电流Ia的衰减开始时间t2持续的持续时间。 在该温度测量方法中，基于预先测量的累积时间ts和结温之间的关系特性，将测量的截止特征时间转换为SiC GTO的结温。

公开(公告)号：US20100032686A1

公开(公告)日：2010-02-11

申请号：US12525198

申请日：2008-01-31

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

IPC分类号： H01L29/866 ,  H01L21/04

CPC分类号： H01L29/866 ,  H01L29/06 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66106 ,  H01L29/8613

摘要： Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.

摘要翻译： 双极半导体器件在齐纳电压的宽范围（例如10至500V）内非常精确地控制齐纳电压。 双极半导体器件具有台面结构，并且包括第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层，第二导电类型的高掺杂层和碳化硅导电层 第二导电类型，其中基板和导电层按顺序层压。

公开(公告)号：US20090317983A1

公开(公告)日：2009-12-24

申请号：US12067028

申请日：2006-09-01

申请人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiro Nagano ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

发明人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiro Nagano ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

IPC分类号： H01L21/26

CPC分类号： H01L29/66068 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/861

摘要： In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.

摘要翻译： 在从碳化硅单晶衬底的表面生长的碳化硅外延膜内的电流通过期间电子和空穴彼此复合的双极性碳化硅半导体器件中，本文所述的目的是减少 通过电流通过而扩展的堆垛层错的核，由此抑制双极性碳化硅半导体器件的正向电压的增加。 在制造双极性碳化硅半导体器件的方法中，在最后的制造工序中，在300℃以上的温度下进行热处理。 优选地，上述热处理在电极形成之后进行，然后将所得到的双极性碳化硅半导体器件安装在封装中。

公开(公告)号：US07626232B2

公开(公告)日：2009-12-01

申请号：US10593878

申请日：2005-03-17

申请人： Katsunori Asano ,  Yoshitaka Sugawara

发明人： Katsunori Asano ,  Yoshitaka Sugawara

IPC分类号： H01L29/94

CPC分类号： H01L29/1095 ,  H01L29/0623 ,  H01L29/7391 ,  H01L29/7395

摘要： SiC-IGBTs, which have an inversion-type channel with high channel resistance and have high on-voltage due to an influence from the surface state of the interface between a gate insulating film and a base layer, are required to decrease the on-voltage.An embedded collector region is partially formed in a base layer which is formed on an emitter layer of a SiC semiconductor. A channel layer is formed on the base layer and the embedded collector region to constitute an accumulation-type channel. Consequently, at on time, holes are accumulated in the upper layer portion of the channel layer so that a low-resistant channel is formed. Current by the holes flows to the emitter layer through a channel from the collector region and becomes a base current for an npn transistor composed of the embedded collector region, the base region and the emitter region.

摘要翻译： 需要具有高通道电阻的反型通道和由于栅极绝缘膜和基极层之间的界面的表面状态的影响而具有高导通电压的SiC-IGBT，以降低导通电压 。 嵌入式集电极区域部分地形成在形成在SiC半导体的发射极层上的基极层中。 沟道层形成在基极层和嵌入的集电极区域上，构成积聚型沟道。 因此，在时间上，在沟道层的上层部分积聚有孔，从而形成低阻抗沟道。 这些空穴的电流通过来自集电极区域的沟道流到发射极层，成为由嵌入式集电极区域，基极区域和发射极区域构成的npn晶体管的基极电流。

公开(公告)号：US07470960B1

公开(公告)日：2008-12-30

申请号：US10111625

申请日：2000-10-24

申请人： Yoshitaka Sugawara

发明人： Yoshitaka Sugawara

IPC分类号： H01L29/08

CPC分类号： H01L29/7825 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/267 ,  H01L29/41716 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/7393 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/744 ,  H01L29/749 ,  H01L29/7809 ,  H01L29/7816

摘要： A semiconductor device which eases an electric field at a drift portion without a reduction in impurity concentrations, and has a high withstand voltage and a low on-resistance, wherein, when a rated voltage is applied between a body region and a drain region formed on an insulating semiconductor substrate, the thicknesses of two, p-type and n-type, drift regions sandwiched between the body and drain regions are selected so as to completely deplete the drift regions.

摘要翻译： 一种半导体器件，其在漂移部分缓和电场而不会降低杂质浓度，并且具有高的耐受电压和低导通电阻，其中当在形成于其上的体区和漏区之间施加额定电压时 绝缘半导体衬底，选择夹在体区和漏区之间的两个p型和n型漂移区的厚度，以便完全耗尽漂移区。

公开(公告)号：US07462888B2

公开(公告)日：2008-12-09

申请号：US11855138

申请日：2007-09-13

申请人： Yoshitaka Sugawara

发明人： Yoshitaka Sugawara

IPC分类号： H01L29/74

CPC分类号： H01L29/8613 ,  H01L23/045 ,  H01L23/34 ,  H01L23/345 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/744 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20758 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.

摘要翻译： 使用诸如加热器的加热装置提高使用宽间隙半导体的双极性半导体元件的温度，以获得可控电流大且损耗小的功率半导体器件。 温度设定为高于宽间隙双极性半导体元件的稳定损耗的减少对应于内置电压降低的减小的温度的温度，这取决于宽间隙双极型半导体的升温 元素大于对应于根据升温升高的导通电阻增加的稳定损耗的增量。

公开(公告)号：US20080043500A1

公开(公告)日：2008-02-21

申请号：US11630986

申请日：2005-06-29

申请人： Katsunori Asano ,  Yoshitaka Sugawara

发明人： Katsunori Asano ,  Yoshitaka Sugawara

IPC分类号： H02H7/122 ,  H02H3/20

CPC分类号： H02M1/34 ,  H02M7/48 ,  H02M2001/346 ,  H03K17/08144 ,  Y02B70/1483 ,  Y02B70/1491

摘要： A snubber circuit as a conventional protection circuit for inverters, which is composed of an anode reactor, a Si diode and a resistance, needs to keep junction temperature of the Si diode at 125° C. or lower during operation and therefore requires mounting of a large-size heat sink, which causes a large number of component parts and difficulty in downsizing. As a diode of a snubber circuit for circulating electomagnetic energy of the anode reactor, a wide gap semiconductor (SiC) diode, which does not need a heat sink or requires only a small-size heat sink, is used. When the current density of SiC diode is made 20 to 30 times larger than the current density during normal temperature operation, ON resistance increases, and therefore it becomes possible to substitute the ON resistance for the resistance of the snubber circuit. The increase in current density increases the temperature of the SiC diode. However, since the SiC diode can operate at temperature near 300° C. without any problems, a large-size heat sink is not necessary.

摘要翻译： 作为用于逆变器的常规保护电路的缓冲电路由阳极电抗器，Si二极管和电阻组成，需要在操作期间将Si二极管的结温保持在125℃或更低，因此需要安装 大型散热器，导致大量的部件和小型化的难度。 作为用于使阳极反应堆的电磁能循环的缓冲电路的二极管，使用不需要散热器或仅需要小尺寸散热器的宽间隙半导体（SiC）二极管。 在常温工作时，当二极管的电流密度比电流密度大20〜30倍时，导通电阻增加，因此可以用导通电阻代替缓冲电路的电阻。 电流密度的增加提高了SiC二极管的温度。 然而，由于SiC二极管可以在接近300℃的温度下工作而没有任何问题，因此不需要大型散热器。