Abstract:
A method of producing a semiconductor component includes providing a carrier with a first insulation layer, a mirror layer at least partially covered by the first insulation layer and a connection element, wherein the carrier includes an exposed planar mounting surface and the connection element extends through the first insulation layer to the mounting surface, providing a main body with a semiconductor body, a second insulation layer and a contact element to electrically contact the semiconductor body, wherein the main body has an exposed planar contact surface and the contact element extends through the second insulation layer to the contact surface, and connecting the main body to the carrier, wherein the planar contact surface and the planar mounting surface are brought together to form a connecting surface, and the contact element and the connection element electrically connect with one another.
Abstract:
A method for producing a plurality of optoelectronic semiconductor devices is provided. A number of semiconductor chips are fastened on an auxiliary support. The semiconductor chips are spaced apart from one another in a lateral direction. A reflective layer is formed, at least in regions between the semiconductor chips. A composite package body is formed at least in certain regions between the semiconductor chips. The auxiliary support is removed and the composite housing body is separated into a number of optoelectronic semiconductor devices. Each optoelectronic semiconductor device has at least one semiconductor chip, part of the reflective layer and part of the composite package body as a package body.
Abstract:
An optoelectronic component includes an optoelectronic semiconductor chip embodied as a volume emitter, wherein the optoelectronic semiconductor chip is embedded into an optically transparent molded body, a soldering contact is arranged at an underside of the molded body, a bonding wire forms an electrically conductive connection between an electrical contact area of the optoelectronic semiconductor chip and the soldering contact, and the bonding wire is embedded into the molded body.
Abstract:
An optoelectronic semiconductor component includes a semiconductor chip having a semiconductor layer sequence including an active region that generates radiation; a radiation exit surface running parallel to the active region; a mounting side surface that fixes the semiconductor component and runs obliquely or perpendicularly to the radiation exit surface and at which at least one contact area for external electrical contacting is accessible; a molded body molded onto the semiconductor chip in places and forming the mounting side surface at least in regions; and a contact track arranged on the molded body and electrically conductively connecting the semiconductor chip to the at least one contact area.
Abstract:
A detection assembly and a method for producing a detection assemblies are disclosed. In an embodiment a detection arrangement includes an emitter configured to generate radiation having a peak wavelength in an infrared spectral range, a detector configured to receive the radiation, a mounting surface comprising at least a first contact surface and a second contact surface for external electrical connection of the detection arrangement, a form body adjoining the emitter and the detector at least in places and deflection optics, on which the radiation impinges during operation of the detection arrangement so that an optical path is formed between the emitter and the detector by the deflection optics, wherein the deflection optics include a scattering body into which the radiation enters during the operation through a surface of the scattering body facing the emitter.
Abstract:
An optoelectronic component and a lighting apparatus are disclosed. In an embodiment an optoelectronic component includes a carrier having an upper side and an underside opposite the upper side, an optoelectronic semiconductor chip arranged on the upper side of the carrier, the semiconductor chip configured to emit primary radiation during operation via one or more sides. The component further includes a first conversion layer having an inorganic phosphor on the semiconductor chip, the first conversion layer covering at least all radiation-emitting sides of the semiconductor chip not facing the carrier and a solid body in which an organic phosphor is distributed, wherein the solid body is arranged and fastened on the carrier and is at least in indirect contact with the carrier, and wherein the solid body is spaced from the radiation-emitting sides of the semiconductor chip at least by the first conversion layer and/or by the carrier.
Abstract:
A method of transferring semiconductor chips includes providing a transfer tool having a plurality of segments, each segment having a liquid receiving area; providing a plurality of semiconductor chips in a regular array on a source carrier; providing a target carrier; selectively arranging liquid drops on the liquid receiving areas of some of the segments; causing the transfer tool to approach the source carrier, each liquid drop contacting and wetting a semiconductor chip; lifting the transfer tool from the source carrier, wherein semiconductor chips wetted by liquid drops are lifted from the source carrier by the transfer tool; causing the target carrier by the transfer tool, to approach the semiconductor chips arranged on the transfer tool contacting the target carrier; and lifting the transfer tool from the target carrier, the semiconductor chips contacting the target carrier remaining on the target carrier
Abstract:
In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1). The contact surfaces (61, 63) are oriented parallel to a growth direction (G) of the semiconductor layer sequence (2). The semiconductor laser (1) can be surface-mounted without wires.
Abstract:
A method of producing an optoelectronic component includes providing a wafer substrate that includes a light-emitting layer sequence, singulating the wafer substrate having the layer sequence into semiconductor components, applying the semiconductor components to an intermediate carrier, arranging a potting material on the intermediate carrier such that the potting material laterally surrounds the semiconductor components and is in direct contact, at least in places, with side surfaces of the semiconductor components, arranging one contact on one semiconductor component and the potting material, wherein one contact is arranged on a side of the semiconductor component and the potting material remote from the intermediate carrier, connecting the component to a carrier element, on a side of the semiconductor components remote from the intermediate carrier, removing the intermediate carrier and the wafer substrate of the semiconductor components, and bringing the semiconductor components into electrical contact by the contacts and the potting material.
Abstract:
A module for a video wall is disclosed. In an embodiment a module includes a carrier, a plurality of components comprising at least one light-emitting structural element arranged on the carrier and an optical element, wherein the components are arranged at a prespecified lateral distance in relation to one another, wherein a retaining recess is formed between at least two components, wherein the retaining recess comprises at least two component recesses of two components which are arranged next to one another, wherein a retaining pin is fastened in the retaining recess, wherein the retaining pin is connected to the optical element, and wherein the optical element is configured to influence light irradiation onto the components and/or light emission from the components.