公开(公告)号：US07596165B2

公开(公告)日：2009-09-29

申请号：US11091656

申请日：2005-03-28

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S3/08

CPC分类号： H01S5/423 ,  B82Y20/00 ,  H01L33/105 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/18361 ,  H01S5/3054 ,  H01S5/3077 ,  H01S5/3211 ,  H01S5/3432

摘要： A Distributed Bragg Reflector (DBR) that has relatively low light absorption, relatively low electrical resistance, and/or relatively good thermal conductivity. The DBR may include a first mirror layer and a second mirror layer, with an interface therebetween. A step transition is provided in the aluminum concentration and in the doping concentration at or near the interface between the first mirror layer and the second mirror layer. To reduce optical absorption, the interface between the first and second mirror layers may be positioned at or near a null in the optical electric field within the DBR. A graded junction may also be provided. The graded junction may be more lightly doped, have a graded aluminum concentration, and may be placed at or near a peak in the optical electric field.

摘要翻译： 具有相对低的光吸收，相对低的电阻和/或相对良好的导热性的分布式布拉格反射器（DBR）。 DBR可以包括第一镜层和第二镜层，其间具有界面。 提供铝浓度和在第一镜层和第二镜层之间的界面处或附近的掺杂浓度的阶跃转换。 为了减少光吸收，第一和第二镜层之间的界面可以位于DBR内的光电场中或接近零位。 还可以提供分级连接点。 分级结可以更轻掺杂，具有梯度铝浓度，并且可以放置在光电场中或附近的峰值处。

公开(公告)号：US07435660B2

公开(公告)日：2008-10-14

申请号：US11456779

申请日：2006-07-11

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L21/76

CPC分类号： H01L21/02395 ,  B82Y20/00 ,  H01L21/02387 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  H01L33/007 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/2063 ,  H01S5/3201 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2302/00 ,  H01S2304/02

摘要： Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using controlled group V fluxes and temperatures. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V materials at a given group V flux and then raising the group V flux to saturate the surface of the flattening layer with the group V material. A cap layer is also formed over the quantum well. Where nitrogen is used, the systems incorporate a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.

摘要翻译： 方法和系统产生与含氮量子阱相关的扁平层，并且使用受控的V族通量和温度来防止含氮层的3-D生长。 MEE（迁移增强外延）用于形成平坦化层，在其上形成量子阱，从而增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。 通过在给定的组V通量处交替沉积III族和V族材料的单原子层，然后提高V族通量，使V族材料使平坦化层的表面饱和来进行MEE。 覆盖层也形成在量子阱上。 在使用氮气的情况下，该系统包含防止氮气进入MBE处理室（例如闸阀）的机械装置。

公开(公告)号：US07346090B2

公开(公告)日：2008-03-18

申请号：US11554473

申请日：2006-10-30

申请人： Ralph H. Johnson ,  R. Scott Penner ,  James Robert Biard

发明人： Ralph H. Johnson ,  R. Scott Penner ,  James Robert Biard

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/305 ,  H01S5/3095

摘要： A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.

摘要翻译： 具有几乎平面的腔内接触的VCSEL。 在基板上形成底部DBR反射镜。 在底部DBR镜上形成第一导电层区域。 包括量子阱的有源层在第一导电层区域上。 沟槽形成有源层区域。 沟槽形成为具有为活动层区域提供机械支撑的轮辐车轮构造。 沟槽被蚀刻到第一导电层区域附近。 质子植入物被提供在货车轮中并且被配置成使得货车车轮的轮辐绝缘。 形成近似平面的电接触件作为用于将有源区域的底部连接到电源的腔内接触。 几乎平面的电接触形成在沟槽中和周围。

公开(公告)号：US07110427B2

公开(公告)日：2006-09-19

申请号：US10933876

申请日：2004-09-03

申请人： Ralph H. Johnson ,  Tzu-Yu Wang

发明人： Ralph H. Johnson ,  Tzu-Yu Wang

IPC分类号： H01S3/04

CPC分类号： H01S5/18313 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063

摘要： The invention is generally concerned with vertical cavity surface emitting lasers. In one example, the vertical cavity surface emitting laser includes, among other things, an upper mirror structure having a metal contact, a top mirror above the metal contact, and a semiconductive top DBR having an insulation region, wherein the top DBR is no more than 3.5 microns thick and is disposed below the metal contact. Thus, the top DBR is sufficiently thick as to enable adequate current spreading, but thin enough to enable fabrication of an isolation region using relatively low energy ion implantation or relatively shallow etching.

摘要翻译： 本发明通常涉及垂直腔表面发射激光器。 在一个示例中，垂直腔表面发射激光器包括具有金属接触件的上反射镜结构，金属接触件上方的顶镜和具有绝缘区域的半导体顶部DBR，其中顶部DBR不再 超过3.5微米厚，并设置在金属接触件的下方。 因此，顶部DBR足够厚以使得能够进行足够的电流扩展，但是足够薄以使得能够使用相对低能量的离子注入或相对浅的蚀刻来制造隔离区域。

公开(公告)号：US06975660B2

公开(公告)日：2005-12-13

申请号：US10026020

申请日：2001-12-27

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/183 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/3211 ,  H01S5/32366 ,  H01S5/34306 ,  H01S5/34346

摘要： Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL), can include at least one quantum well comprised of InGaAsSb; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. A vertical cavity surface emitting laser (VCSEL), can also include at least one quantum well comprised of InGaAsSbN. Barrier layers can be comprised of GaAsN, GaAsP, or AlGaAs. Confinement layers can be comprised of AlGaAs. Quantum wells can include N. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

摘要翻译： 可以生长量子阱和相关屏障层，以包括放置在典型GaAs衬底内或周围的氮（N），铝（Al），锑（Sb），磷（P）和/或铟（In），以实现长波长VCSEL 性能，例如在1260至1650 nm范围内。 根据本发明的特征，垂直腔表面发射激光器（VCSEL）可以包括由InGaAsSb组成的至少一个量子阱; 夹持所述至少一个量子阱的阻挡层; 以及夹持所述阻挡层的限制层。 垂直腔表面发射激光器（VCSEL）也可以包括由InGaAsSbN组成的至少一个量子阱。 阻挡层可以由GaAsN，GaAsP或AlGaAs组成。 限制层可以由AlGaAs组成。 量子阱可以包括N.量子阱可以发展到并且包括厚度为50埃。 量子阱也可以开发深度至少40 meV。

公开(公告)号：US06905900B1

公开(公告)日：2005-06-14

申请号：US09724820

申请日：2000-11-28

申请人： Ralph H. Johnson ,  Gilberto Morales

发明人： Ralph H. Johnson ,  Gilberto Morales

IPC分类号： H01S5/028 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H01L21/00 ,  H01S5/187

CPC分类号： H01S5/18391 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

摘要： A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser) component (100) is disclosed, comprising a semiconductor substrate (102) having a lower surface and an upper surface, a bottom electrical contact (104) disposed along the lower surface of the substrate, a lower mirror (106) formed of n-type material and disposed upon the upper surface of the substrate, an active region (108) having a plurality of quantum wells disposed upon the lower mirror portion, an upper mirror (110) formed from isotropic material and disposed upon the active region, an equipotential layer (112) disposed upon the upper mirror portion, a first upper electrical contact (120) disposed upon the equipotential layer, a second upper electrical contact (122) disposed upon the equipotential layer at a particular distance (124) from the first upper electrical contact, a first isolation region (126) disposed beneath the first upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, a second isolation region (128) disposed beneath the second upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, and an insulating layer (114, 116) interposed between the upper mirror and the equipotential layer and adapted to form therebetween an aperture (118) of smaller dimension than the particular distance between the first and second upper contacts.

摘要翻译： 公开了一种用于提供单模VCSEL（垂直腔表面发射激光）部件（100）的系统和方法，包括具有下表面和上表面的半导体衬底（102），沿着 衬底的下表面，由n型材料形成并设置在衬底的上表面上的下反射镜（106），具有设置在下反射镜部分上的多个量子阱的有源区（108），上反射镜 （110），设置在所述有源区上，设置在所述上​​反射镜部分上的等电位层（112），设置在所述等电位层上的第一上电接触件（120），设置在所述等电位层 在距离第一上部电接触件的特定距离（124）处的等电位层处的第一隔离区域（126），其设置在第一上部接触件下方并且穿过等式 电位层，上反射镜，有源区和下反射镜，设置在第二上触点下方并穿过等电位层，上反射镜，有源区和下反射镜的第二隔离区（128） 绝缘层（114,116），其插入在上反射镜和等电位层之间，并且适于在其间形成比第一和第二上触点之间的特定距离更小尺寸的孔（118）。

公开(公告)号：US06798806B1

公开(公告)日：2004-09-28

申请号：US10233112

申请日：2002-09-03

申请人： Ralph H. Johnson ,  Tzu-Yu Wang

发明人： Ralph H. Johnson ,  Tzu-Yu Wang

IPC分类号： H01S500

CPC分类号： H01S5/18313 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063

摘要： VCSELs having upper mirror structures comprised of a semiconductive top DBR, metal contacts, and a top mirror. The top DBR is thick enough for adequate current spreading, but thin enough, being no more than 3.5 microns, to enable easy fabrication of an isolation region. The top mirror, which is over the top DBR, enhances reflectivity. That top mirror is beneficially comprised of a dielectric material, such as TiO2; TiO2+SiO2 (robust and reliable); TiO2+Al2O3 (good thermal conductivity); or Si+MgO, or of a metal. The top mirror is beneficially formed using a vacuum deposition method, such as e-beam or sputtering. The metal contacts are formed on the top DBR. The VCSELs further include a substrate with an electrical contact, a bottom DBR, a bottom spacer, an active region, and a top spacer. Such VCSELs are particularly beneficial at long wavelengths.

摘要翻译： 具有由半导体顶部DBR，金属触点和顶部反射镜组成的上部反射镜结构的VCSEL。 顶部DBR足够厚以便充分的电流扩展，但足够薄，不超过3.5微米，以便容易地制造隔离区域。 顶部镜像，超过顶部的DBR，增强了反射率。 该顶镜有利地由诸如TiO 2的电介质材料组成; TiO2 + SiO2（坚固可靠）; TiO2 + Al2O3（导热性好）; 或Si + MgO，或金属。 使用诸如电子束或溅射的真空沉积方法有利地形成顶部反射镜。 金属触点形成在顶部DBR上。 VCSEL还包括具有电接触的基底，底部DBR，底部间隔物，有源区和顶部间隔物。 这样的VCSEL在长波长下是特别有益的。

公开(公告)号：US06459719B1

公开(公告)日：2002-10-01

申请号：US09819029

申请日：2000-11-03

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5183

CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/18333 ,  H01S5/18358 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3211 ,  H01S5/3432

摘要： An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

摘要翻译： 在一个（即，n掺杂）端具有扩展的有效未掺杂区域的VCSEL的有源区和另一个（即，p掺杂）端，其具有直到甚至包括有源区的一部分的显着掺杂区。 之前的方式是将n和p掺杂区域重掺杂到活性区域，至少接近或甚至部分地掺入其中。

公开(公告)号：US08837547B2

公开(公告)日：2014-09-16

申请号：US13423826

申请日：2012-03-19

申请人： Ralph H. Johnson ,  Jerome K. Wade

发明人： Ralph H. Johnson ,  Jerome K. Wade

IPC分类号： H01S5/34 ,  B82Y20/00 ,  H01S5/343 ,  H01S5/00 ,  H01S5/183

CPC分类号： H01S5/3407 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/34313 ,  H01S5/3436 ,  H01S5/34366 ,  H01S5/34373

摘要： A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.

摘要翻译： 准备VCSEL的方法可以使用MBE来：在第一镜像区域上生长第一导电区域; 在与第一反射镜区域相反的第一导电区域上生长有源区，包括：（a）生长具有In1-xGaxP（As）的量子阱势垒; （b）生长具有GaP，GaAsP或GaAs中的一种或多种的过渡层; （c）生长具有In1-zGazAsyP1-y的量子阱层; （d）生长另一个过渡层具有GaP，GaAsP或GaAs中的一种或多种; （e）在多个循环中重复过程（a）至（d）; 和（f）生长具有In1-xGaxP（As）的量子阱屏障; 在与第一导电区域相反的有源区上生长第二导电区域，其中：x为0.77至0.50; y范围从0.7到1; z范围为0.7〜0.99。

公开(公告)号：US08815617B2

公开(公告)日：2014-08-26

申请号：US11767388

申请日：2007-06-22

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L21/00

CPC分类号： H01S5/18311 ,  H01L33/105 ,  H01L33/44 ,  H01S5/024 ,  H01S5/0282 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3081 ,  H01S5/3095 ,  H01S2301/176

摘要： A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.

摘要翻译： 配置用于VCSEL或RCLED的半导体结构。 半导体结构包括由在光刻过程中可被氧化以产生氧化物孔的材料构成的氧化层。 半导体结构还包括靠近氧化层的多个层。 钝化材料设置在氧化层附近的层上。 钝化材料被配置为抑制层的氧化。