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公开(公告)号:US11899328B2
公开(公告)日:2024-02-13
申请号:US17994525
申请日:2022-11-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Yasuharu Hosaka , Yukinori Shima , Kenichi Okazaki , Shunpei Yamazaki
IPC: G02F1/1368 , G02F1/1333 , G02F1/1362 , H01L27/12 , G02F1/1345 , G02F1/1335 , G02F1/1337
CPC classification number: G02F1/1368 , G02F1/1337 , G02F1/13454 , G02F1/133345 , G02F1/133512 , G02F1/136227 , H01L27/1214 , H01L27/1225 , H01L27/1248
Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.
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公开(公告)号:US11894486B2
公开(公告)日:2024-02-06
申请号:US17978269
申请日:2022-11-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Miyuki Hosoba , Suzunosuke Hiraishi
IPC: H01L33/00 , H01L27/12 , H01L29/786 , G02F1/1368 , H10K59/121
CPC classification number: H01L33/0041 , H01L27/124 , H01L27/1225 , H01L29/7869 , G02F1/1368 , H01L2924/0002 , H10K59/1213 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.
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公开(公告)号:US11894380B2
公开(公告)日:2024-02-06
申请号:US16691730
申请日:2019-11-22
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Shunpei Yamazaki
IPC: H01L27/105 , H01L29/06 , H01L29/786 , H01L21/02 , H01L21/46 , H01L27/12 , G11C11/405 , G11C16/04 , H01L21/8258 , H10B41/10 , H10B41/20 , H10B41/30 , H10B41/35 , H10B41/70 , H01L29/78 , H01L49/02 , H01L27/02
CPC classification number: H01L27/105 , G11C11/405 , G11C16/0433 , H01L21/02664 , H01L21/46 , H01L21/8258 , H01L27/1225 , H01L29/06 , H01L29/7869 , H01L29/78693 , H10B41/10 , H10B41/20 , H10B41/30 , H10B41/35 , H10B41/70 , H01L27/0207 , H01L28/60 , H01L29/7833
Abstract: Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.
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公开(公告)号:US11887553B2
公开(公告)日:2024-01-30
申请号:US18092489
申请日:2023-01-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki
IPC: G09G3/36 , H01L27/12 , G02F1/1362 , G02F1/1337 , G02F1/1368 , H10K50/12 , H10K50/19 , H10K59/32 , H01L29/04 , H01L29/786
CPC classification number: G09G3/3648 , G02F1/1368 , G02F1/13624 , G02F1/133753 , G02F1/136213 , H01L27/1225 , G02F2202/10 , G09G2300/0809 , G09G2310/08 , H01L29/045 , H01L29/7869 , H10K50/12 , H10K50/19 , H10K59/32
Abstract: A display panel for displaying an image is provided with a plurality of pixels arranged in a matrix. Each pixel includes one or more units each including a plurality of subunits. Each subunit includes a transistor in which an oxide semiconductor layer which is provided so as to overlap a gate electrode with a gate insulating layer interposed therebetween, a pixel electrode which drives liquid crystal connected to a source or a drain of the transistor, a counter electrode which is provided so as to face the pixel electrode, and a liquid crystal layer provided between the pixel electrode and the counter electrode. In the display panel, a transistor whose off current is lower than 10 zA/μm at room temperature per micrometer of the channel width and off current of the transistor at 85° C. can be lower than 100 zA/μm per micrometer in the channel width.
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公开(公告)号:US11869417B2
公开(公告)日:2024-01-09
申请号:US17975920
申请日:2022-10-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Kei Takahashi , Susumu Kawashima , Koji Kusunoki , Kazunori Watanabe
IPC: G09G3/32
CPC classification number: G09G3/32 , G09G2330/028
Abstract: The power consumption of a display device is reduced. The power consumption of a driver circuit in a display device is reduced. A pixel included in the display device includes a display element. The pixel is configured to have a function of retaining a first voltage corresponding to a first input pulse signal and a function of driving the display element with a third voltage obtained by addition of a second voltage corresponding to a second input pulse signal to the first voltage.
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公开(公告)号:US11867503B2
公开(公告)日:2024-01-09
申请号:US17263170
申请日:2019-07-24
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Takayuki Ikeda , Ryota Tajima , Yuki Okamoto , Shunpei Yamazaki
IPC: G01B7/00 , G01B7/16 , H01L27/12 , H01L29/423 , H01L29/786 , H03K5/24 , H03K21/08 , H01M10/48 , H10B99/00
CPC classification number: G01B7/18 , H01L27/124 , H01L27/1207 , H01L27/1225 , H01L27/1255 , H01L29/42384 , H01L29/7869 , H01M10/48 , H03K5/24 , H03K21/08 , H10B99/00
Abstract: An anomaly detection system that outputs an anomaly detection signal before a safety valve of a secondary battery is opened is provided. The anomaly detection system includes a strain sensor, a memory, and a comparator. The memory has a function of retaining an analog potential, and the comparator has a function of comparing a potential output by the strain sensor and the analog potential retained by the memory. The strain sensor is attached to the secondary battery before use, and a predetermined potential is retained in the memory. When a housing of the secondary battery expands while the secondary battery is used, and the potential output by the strain sensor becomes higher (or lower) than the predetermined potential, an anomaly detection signal is output.
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公开(公告)号:US11862454B2
公开(公告)日:2024-01-02
申请号:US17377674
申请日:2021-07-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Junichi Koezuka , Kenichi Okazaki , Masami Jintyou
IPC: H01L29/786 , H01L29/66 , H01L29/417 , H01L29/423 , H01L21/02 , H01L21/425 , H01L29/49 , H01L27/12 , H01L21/473 , H01L21/768
CPC classification number: H01L29/7869 , H01L21/0234 , H01L21/0262 , H01L21/02323 , H01L21/02337 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/425 , H01L27/1225 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78696 , H01L21/473 , H01L21/76826 , H01L21/76832
Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.
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公开(公告)号:US11836007B2
公开(公告)日:2023-12-05
申请号:US17585680
申请日:2022-01-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Yoshiharu Hirakata , Hiroyuki Miyake , Seiko Inoue , Shunpei Yamazaki
CPC classification number: G06F1/1652 , G06F3/041 , G06F2203/04102
Abstract: A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.
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公开(公告)号:US11825665B2
公开(公告)日:2023-11-21
申请号:US17949436
申请日:2022-09-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
IPC: H01L29/78 , H10B99/00 , H01L27/105 , H01L27/12 , H10B12/00 , H10B41/20 , H10B41/70 , H01L29/24 , H01L29/786 , G11C13/00 , H01L49/02 , H10B10/00
CPC classification number: H10B99/00 , H01L27/105 , H01L27/124 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/7869 , H01L29/78696 , H10B12/00 , H10B41/20 , H10B41/70 , G11C13/003 , G11C13/0007 , G11C2213/79 , H01L28/40 , H10B10/00
Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.
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公开(公告)号:US11823600B2
公开(公告)日:2023-11-21
申请号:US17984527
申请日:2022-11-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Yoshiyuki Kurokawa
IPC: G09G3/3225 , G09G3/00 , B60K35/00 , G09G5/14
CPC classification number: G09G3/03 , B60K35/00 , G09G3/3225 , G09G5/14 , B60K2370/152 , B60K2370/1533 , B60K2370/331 , G09G2310/0232 , G09G2340/04 , G09G2340/14 , G09G2380/10
Abstract: A display system and vehicle that have novel structures are provided. The display system includes a display panel, a correction circuit, and a memory circuit. The display panel is flexible. The display panel includes a display region and a non-display region. The memory circuit has a function of storing first data about the display region and second data about the non-display region. The non-display region has a region which overlaps with the display region when the display panel is bent. The correction circuit has a function of generating image data to be written to pixels in the display region on the basis of the first data and the second data.
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