公开(公告)号：US06858115B2

公开(公告)日：2005-02-22

申请号：US10387466

申请日：2003-03-14

申请人： Hirozumi Azuma ,  Akihiro Takeuchi ,  Takaaki Matsuoka ,  Kazuyuki Tachi ,  Nobuo Kamiya

发明人： Hirozumi Azuma ,  Akihiro Takeuchi ,  Takaaki Matsuoka ,  Kazuyuki Tachi ,  Nobuo Kamiya

IPC分类号： C08J7/06 ,  C23C14/02 ,  C23C14/22 ,  C23C14/28 ,  C23C14/34

CPC分类号： C23C14/3471 ,  C23C14/02 ,  C23C14/22 ,  C23C14/28

摘要： Sputtering particles are deposited immediately after activating a surface of a substrate composed of a carbon-containing material. Accordingly, a process for reforming a surface of a substrate, a substrate with a reformed surface, and an apparatus therefor are provided in which the depositability and adhesiveness of the sputtering particles are improved. A vacuum ultraviolet light is generated by a laser beam. A surface of a substrate composed of a carbon-containing material is exposed to the generated vacuum ultraviolet light. As a result, the surface of the substrate is activated. Simultaneously therewith, a sputtering particles-generating device generates sputtering particles, such as neutral atoms, ions and clusters. The resultant sputtering particles are deposited on the activated surface of the substrate. Since the sputtering particles are deposited immediately after the surface of the substrate is activated, they are adhered firmly on the surface of the substrate.

摘要翻译： 在活化由含碳材料构成的基材的表面后立即沉积溅射颗粒。 因此，提供了改善基板表面，重整表面的基板及其设备的方法，其中提高了溅射颗粒的沉积能力和粘合性。 通过激光束产生真空紫外线。 由含碳材料构成的基板的表面暴露于产生的真空紫外光。 结果，基板的表面被激活。 与此同时，溅射颗粒发生装置产生诸如中性原子，离子和簇的溅射颗粒。 所得到的溅射颗粒沉积在基板的活化表面上。 由于在基板的表面被激活之后立即沉积溅射颗粒，所以它们牢固地粘附在基板的表面上。

公开(公告)号：US08809207B2

公开(公告)日：2014-08-19

申请号：US14000643

申请日：2012-02-20

申请人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

发明人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

IPC分类号： H01L21/00

CPC分类号： H01L21/30604 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719

摘要： A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

摘要翻译： 当在基板上刻蚀膜时，用于形成用作掩模的预定图案的图案形成方法包括以下步骤：在待处理的膜上形成有机膜图案的有机膜图案形成步骤; 在有机膜图案上形成氮化硅膜; 蚀刻氮化硅膜，使得氮化硅膜仅保留在有机膜图案的侧壁部分上; 除去有机膜，从而在基板上形成预定的氮化硅膜图案。 在基板的温度保持不超过100℃的条件下，成膜步骤激发处理气体并产生等离子体，用等离子体进行等离子体处理，形成压力不超过100的氮化硅膜 MPa。

公开(公告)号：US08573151B2

公开(公告)日：2013-11-05

申请号：US12393724

申请日：2009-02-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto ,  Yasuyuki Shirai ,  Masafumi Kitano ,  Kohei Watanuki ,  Takaaki Matsuoka ,  Shigemi Murakawa

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto ,  Yasuyuki Shirai ,  Masafumi Kitano ,  Kohei Watanuki ,  Takaaki Matsuoka ,  Shigemi Murakawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  B05D5/06 ,  B05D3/02

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

摘要翻译： 传统的微波等离子体处理装置即使使用氪（Kr）作为等离子体产生气体，也只能得到与稀有气体例如氩气（Ar）相同的特性水平的氧化膜或氮化物膜 ）用作等离子体发生气体。 因此，代替形成仅具有陶瓷构件的微波等离子体处理装置的介电窗口，可以通过热处理获得化学计量的SiO 2组成的平坦化膜涂覆在陶瓷构件的多个表面中的一个表面上， 处理空间，然后热处理，从而形成具有非常平坦和致密表面的平坦化绝缘膜。 在平坦化绝缘膜上形成耐腐蚀膜。

公开(公告)号：US08496792B2

公开(公告)日：2013-07-30

申请号：US12593660

申请日：2008-03-28

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/347

摘要： In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

摘要翻译： 在旋转磁体溅射装置中，测量目标消耗量位移量，并且对应于测量结果，调整旋转磁体组与目标之间的距离，并且长时间实现均匀的成膜速度，以便 以减少由于目标物的消耗导致的目标表面的变化并且随着时间而减少成膜速率的变化。 可以使用超声波传感器或激光发射/接收装置作为测量目标的消耗位移量的装置。

公开(公告)号：US08435882B2

公开(公告)日：2013-05-07

申请号：US12452784

申请日：2008-07-24

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L21/4763

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.

摘要翻译： 本发明可以是包括直接沉积在氟化绝缘膜上的氟化绝缘膜和SiCN膜的半导体器件，其中SiCN膜中的氮密度从氟化绝缘膜和SiCN膜之间的界面减小。 在本发明中，作为硬掩模，可以形成与CFx膜的界面附近具有高介电常数的SiCN膜作为整体的低介电常数。

公开(公告)号：US20120064259A1

公开(公告)日：2012-03-15

申请号：US13320376

申请日：2010-03-19

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35 ,  F28D15/00

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3497

摘要： Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion.

摘要翻译： 提供一种旋转磁体溅射装置，其减少由等离子体激发功率的增加引起的由于目标部分的加热引起的不利影响。 旋转磁体溅射装置具有这样的结构，其中通过使冷却介质在形成在多个螺旋状板状磁体组之间的螺旋空间中流动，或者通过在背板中设置冷却通道，从目标部分去除热量 支援目标部分。

公开(公告)号：US20110268870A1

公开(公告)日：2011-11-03

申请号：US13101792

申请日：2011-05-05

申请人： Tadahiro OHMI ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

发明人： Tadahiro OHMI ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

IPC分类号： B05D5/12

CPC分类号： C23C14/564 ,  C23C14/12 ,  C23C14/228 ,  C23C14/24 ,  H01L51/0008 ,  H01L51/0081 ,  H01L51/56

摘要： In an apparatus for film formation, constituted so that an organic EL molecular gas is ejected into an ejection vessel, a plurality of organic EL material vessels are provided together with a piping system for connecting the plurality of organic EL material vessels to the ejection vessel. The plurality of organic EL material vessels are selectively put into a supply state of organic EL molecules. The piping system is constructed so that the carrier gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the carrier gas is allowed to flow from one of the organic EL material vessels to other material vessel.

摘要翻译： 在用于成膜的装置中，有机EL分子气体被喷射到喷射容器中，多个有机EL材料容器与用于将多个有机EL材料容器连接到喷射容器的管道系统一起提供。 多个有机EL材料容器选择性地进入有机EL分子的供给状态。 管道系统被构造成使得载气以这样的方式被供给到每个有机EL材料容器中，使得成膜期间的压力和非成膜期间的压力彼此相等。 在非成膜期间，允许载气从有机EL材料容器之一流动到其他材料容器。

公开(公告)号：US07923819B2

公开(公告)日：2011-04-12

申请号：US12514173

申请日：2007-11-08

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L23/58

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

摘要翻译： 半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。 氟碳膜含氮，介电常数低，重现性好，稳定性好。

公开(公告)号：US20100264117A1

公开(公告)日：2010-10-21

申请号：US12740904

申请日：2008-10-28

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka

IPC分类号： H01L21/311 ,  C23C16/50 ,  H01L21/31 ,  C23C16/453

CPC分类号： C23C16/52 ,  C23C14/22 ,  C23C16/44 ,  C23C16/45561 ,  H01J37/3244 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76811 ,  H01L21/76813

摘要： A plasma processing system includes a plasma processing device for forming or etching the plurality of films and a gas source for supplying all gases required for forming or etching the plurality of films. Furthermore, gases required for forming or etching each of the plurality of films are selectively supplied from the gas source to the plasma processing device via gas pipes by a control device. Therefore, a plurality of films of different compositions may be formed or etched within a single plasma processing device.

摘要翻译： 等离子体处理系统包括用于形成或蚀刻多个膜的等离子体处理装置和用于供应用于形成或蚀刻多个膜所需的所有气体的气体源。 此外，通过控制装置，通过气体管道，从气体源将等离子体处理装置选择性地供给到形成或蚀刻多个膜中的每一个所需的气体。 因此，可以在单个等离子体处理装置内形成或蚀刻多个不同组成的膜。

公开(公告)号：US20100126852A1

公开(公告)日：2010-05-27

申请号：US12593660

申请日：2008-03-28

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/347

摘要： In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

摘要翻译： 在旋转磁体溅射装置中，测量目标消耗量位移量，并且对应于测量结果，调整旋转磁体组与目标之间的距离，并且长时间实现均匀的成膜速度，以便 以减少由于目标物的消耗导致的目标表面的变化并且随着时间而减少成膜速率的变化。 可以使用超声波传感器或激光发射/接收装置作为测量目标的消耗位移量的装置。