公开(公告)号：US20050218456A1

公开(公告)日：2005-10-06

申请号：US11093202

申请日：2005-03-30

申请人： Masao Kondo ,  Kazuaki Kurihara

发明人： Masao Kondo ,  Kazuaki Kurihara

IPC分类号： G02F1/035 ,  G02F1/295 ,  H01L21/28 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78 ,  H01L41/09 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/316 ,  H01L41/317 ,  H01L41/318 ,  H03H3/08 ,  H03H9/145

CPC分类号： G02F1/0553 ,  H01L21/28291 ,  H01L29/516 ,  H01L29/78391

摘要： A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.

摘要翻译： 叠层膜结构，制造方法以及使用该结构的优选的电子元件。 参照半导体衬底的平面取向，通过增强通过外延生长形成的铁电体物质膜的晶体特性和取向性能，可以在晶轴的方向上实现电场的有效极化。 在半导体衬底上依次形成钇稳定的锆膜和岩盐结构的薄膜外延生长后，外延生长也形成简单的钙钛矿结构的铁电物质膜。 铁素体膜可以通过在钇稳定化锆的晶轴的平面内旋转45度的平面来提高其结晶性和取向性。

公开(公告)号：US20050142733A1

公开(公告)日：2005-06-30

申请号：US11066540

申请日：2005-02-28

申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki

发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L21/8242

CPC分类号： H01G4/33 ,  H01L27/0629 ,  H01L27/0805 ,  H01L28/40

摘要： A thin film capacitor is provided which includes a single crystal high dielectric constant dielectric layer. The thin film capacitor has a single crystal silicon substrate, a single crystal intermediate layer epitaxially grown on the single crystal silicon substrate, a single crystal lower electrode epitaxially grown on the single crystal intermediate layer, a single crystal high dielectric constant dielectric layer epitaxially grown on the lower electrode layer, an upper electrode layer formed above the single crystal high dielectric constant dielectric layer, and a plurality of conductor terminals connected to the lower electrode layer and upper electrode layer at a plurality of positions.

摘要翻译： 提供了一种薄膜电容器，其包括单晶高介电常数介电层。 薄膜电容器具有单晶硅衬底，在单晶硅衬底上外延生长的单晶中间层，在单晶中间层外延生长的单晶下电极，外延生长在单晶硅介电层上的单晶高介电常数电介质层 下电极层，形成在单晶高介电常数介质层上的上电极层，以及在多个位置连接到下电极层和上电极层的多个导体端子。

公开(公告)号：US20050098816A1

公开(公告)日：2005-05-12

申请号：US10849791

申请日：2004-05-21

申请人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01G4/008 ,  H01G4/228 ,  H01G4/33 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/52 ,  H01L27/04 ,  H01L27/08 ,  H01L27/108 ,  H01L21/8234 ,  H01L21/8244 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L21/20

CPC分类号： H01G4/33 ,  H01G4/008 ,  H01G4/228 ,  H01L21/28568 ,  H01L27/0805 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/11

摘要： The capacitor according to the present invention comprises a lower electrode 18 formed on a base substrate 14, a dielectric film 20 formed on the lower electrode 18, and an upper electrode 28 formed on the dielectric film 20 and including a polycrystalline conduction film 22, and a amorphous conduction film 24 formed on the polycrystalline conduction film 22. Because of the amorphous conduction film 24 included in the upper electrode 28, which can shut off hydrogen and water, hydrogen and water can be prohibited from arriving at the dielectric film 20. Accordingly, the dielectric film 20 of an oxide is prevented from being reduced with hydrogen, and the capacitor can have good electric characteristics.

摘要翻译： 根据本发明的电容器包括形成在基底基板14上的下电极18，形成在下电极18上的电介质膜20和形成在电介质膜20上并包括多晶导体膜22的上电极28，以及 形成在多晶导体膜22上的非晶导体膜24.由于包含在上电极28中的可以截断氢和水的非晶导体膜24，可以禁止氢和水到达电介质膜20。 ，防止氧化物的电介质膜20被氢还原，电容器可以具有良好的电特性。

公开(公告)号：US20050056878A1

公开(公告)日：2005-03-17

申请号：US10974747

申请日：2004-10-28

申请人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John Baniecki ,  Kazuaki Kurihara

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/768 ,  H01L23/50 ,  H01L27/01 ,  H01L27/108 ,  H01L27/13

CPC分类号： H01L27/016 ,  H01L21/76804 ,  H01L21/76895 ,  H01L23/50 ,  H01L27/13 ,  H01L28/40 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

摘要翻译： 一种薄膜电容器，包括绝缘衬底，位于衬底上的电容器结构，具有夹在下电极层和上电极层之间的电介质层的电容器结构以及分别连接到下电极层和上电极的导体构件 其特征在于，至少所述电介质层的侧面具有足够的倾斜度，以防止通过所述导体部件的所述下部电极层的上部电极层的短路。 还公开了制造这种薄膜电容器的方法。

公开(公告)号：US06769177B2

公开(公告)日：2004-08-03

申请号：US10175156

申请日：2002-06-20

申请人： Shuji Koike ,  Yoshiaki Sakamoto ,  Tomohisa Shingai ,  Seigen Otani ,  Toshihiko Osada ,  Kazuaki Kurihara

发明人： Shuji Koike ,  Yoshiaki Sakamoto ,  Tomohisa Shingai ,  Seigen Otani ,  Toshihiko Osada ,  Kazuaki Kurihara

IPC分类号： B23P1700

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2002/1425 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49401

摘要： A method of producing an ink-jet recording head using ion milling is provided. The method includes the steps of forming a piezoelectric layer subsequent to an electrode layer on a substrate by using a thin-film deposition technology, forming an energy-generating element for generating energy for ink ejection by etching the electrode layer and the piezoelectric layer simultaneously by ion milling, and removing a fence formed by deposits of mixed fine powders including those etched off the electrode layer and the piezoelectric layer.

摘要翻译： 提供了使用离子铣削制造喷墨记录头的方法。 该方法包括以下步骤：通过使用薄膜沉积技术在基板上的电极层之后形成压电层，通过同时蚀刻电极层和压电层形成用于产生喷墨能量的能量产生元件 离子研磨，以及去除由电极层和压电体层剥离的混合细粉末的沉积物形成的栅栏。

公开(公告)号：US5906481A

公开(公告)日：1999-05-25

申请号：US651556

申请日：1996-05-22

申请人： Kazuki Ogawa ,  Yuji Yoshida ,  Motoyuki Nishizawa ,  Nobuo Kamehara ,  Akio Yano ,  Akihiko Miyaki ,  Masahiro Ono ,  Yasuo Numata ,  Kazuaki Kurihara ,  Keiji Watanabe

发明人： Kazuki Ogawa ,  Yuji Yoshida ,  Motoyuki Nishizawa ,  Nobuo Kamehara ,  Akio Yano ,  Akihiko Miyaki ,  Masahiro Ono ,  Yasuo Numata ,  Kazuaki Kurihara ,  Keiji Watanabe

IPC分类号： B41J2/045 ,  B41J2/055 ,  B41J2/14 ,  B41J2/16 ,  F04B17/06 ,  F04B43/04 ,  F04B17/00

CPC分类号： B41J2/1643 ,  B41J2/14209 ,  B41J2/1609 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  F04B43/046 ,  B41J2002/14379

摘要： A piezoelectric fluid pump includes a stationary pump base and a plurality of piezoelectric elements arranged in parallel on the stationary pump base, each of the piezoelectric elements having, in a polarizing direction thereof or in a direction perpendicular to the polarizing direction, a first end fixed to the stationary pump base and a free, second end. The free, second ends of respective pairs of adjacent the piezoelectric elements are connected to each other, for respective units of the fluid pump. Between the pair of piezoelectric elements and between the stationary pump base and the connecting means, pressure chambers are defined. There are gaps are between walls of the piezoelectric elements and walls of piezoelectric elements of adjacent units.

摘要翻译： 压电流体泵包括固定泵基座和在固定泵基座上并联布置的多个压电元件，每个压电元件在其偏振方向或垂直于偏振方向的方向上具有固定的第一端 到固定泵基座和自由的第二端。 各对相邻的压电元件的自由的第二端彼此连接，用于流体泵的相应单元。 在一对压电元件之间和固定泵基座与连接装置之间，限定压力室。 在压电元件的壁和相邻单元的压电元件的壁之间存在间隙。

公开(公告)号：US5565249A

公开(公告)日：1996-10-15

申请号：US57823

申请日：1993-05-07

申请人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Tsukasa Itani ,  Motonobu Kawarada

发明人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Tsukasa Itani ,  Motonobu Kawarada

IPC分类号： C23C16/27 ,  H05H1/34 ,  H05H1/48 ,  B05D3/06

CPC分类号： C23C16/276 ,  H05H1/48 ,  H05H2001/3426 ,  H05H2001/3452

摘要： A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.

摘要翻译： 使用DC等离子体射流进行气相合成金刚石的方法，其中使用DC等离子体焰炬通过直流电弧放电产生的等离子体射流进行冲击，并在衬底上生长金刚石，其中使用多个等离子体焰炬 阳极，它们同轴地布置在可伸缩结构中，根据需要使电弧旋转或电极旋转以对金刚石进行气相合成，施加磁场。

公开(公告)号：US5338364A

公开(公告)日：1994-08-16

申请号：US994287

申请日：1992-12-21

申请人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Motonobu Kawarada

发明人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Motonobu Kawarada

IPC分类号： C23C4/04 ,  C23C4/12 ,  C23C16/27 ,  C23C16/30 ,  C23C16/453 ,  C23C16/00

CPC分类号： C23C4/04 ,  C23C16/27 ,  C23C16/30 ,  C23C16/453 ,  C23C4/12

摘要： A process and apparatus for producing a diamond film from a gas phase, in which a fuel gas is burnt by oxygen gas in a torch, to thereby provide a gas flame jet having a high temperature and high speed sufficient to form a high quality diamond film on a substrate, by an unlimited use of various kinds of combustible carbon compound gases as the fuel gas. A process and apparatus for producing a diamond film from a gas phase, in which a thermal spray material is fed to a combustion flame to thereby form an intermediate layer of a mixture of the thermal spray material and diamond between a substrate and a diamond film, to thereby provide a high purity diamond film having an improved adhesion to the substrate.

摘要翻译： 一种用于从气相制备金刚石膜的方法和装置，其中燃料气体被焊炬中的氧气燃烧，从而提供具有足以形成高质量金刚石膜的高温和高速的气体火焰喷射 在基板上，通过不限制地使用各种可燃碳化合物气体作为燃料气体。 一种用于从气相制备金刚石膜的方法和装置，其中热喷涂材料被供给到燃烧火焰，从而在基材和金刚石膜之间形成热喷涂材料和金刚石的混合物的中间层， 从而提供具有改进的与基底的粘附性的高纯度金刚石膜。

公开(公告)号：US5260106A

公开(公告)日：1993-11-09

申请号：US790115

申请日：1991-11-12

申请人： Motonobu Kawarada ,  Kazuaki Kurihara ,  Ken-ichi Sasaki ,  Akitomo Teshima ,  Nagaaki Koshino

发明人： Motonobu Kawarada ,  Kazuaki Kurihara ,  Ken-ichi Sasaki ,  Akitomo Teshima ,  Nagaaki Koshino

IPC分类号： C23C16/02 ,  C23C16/27 ,  C23C28/00 ,  B05D3/06 ,  C23C16/00

CPC分类号： C23C16/0272 ,  C23C16/27 ,  C23C28/00 ,  Y10T428/30

摘要： A diamond film is deposited on a surface of a substrate. The diamond film is attached securely to the substrate by forming a first layer on the surface comprising a mixture of a main component of the substrate and a sintering reinforcement agent for diamond, then forming a second layer comprising a mixture of said agent and diamond on said first layer, and finally forming the diamond film on the second layer.

摘要翻译： 金刚石膜沉积在基板的表面上。 通过在表面上形成第一层，将基底的主要成分和金刚石的烧结增强剂的混合物形成第一层，然后形成第二层，所述第二层包含所述试剂和金刚石的混合物，所述第二层在所述 第一层，最后在第二层上形成金刚石膜。

公开(公告)号：US4679320A

公开(公告)日：1987-07-14

申请号：US801783

申请日：1985-11-26

申请人： Yoshihiko Imanaka ,  Hiromi Ogawa ,  Mineharu Tsukada ,  Etsuro Udagawa ,  Kazuaki Kurihara ,  Hiromitsu Yokoyama ,  Nobuo Kamehara

发明人： Yoshihiko Imanaka ,  Hiromi Ogawa ,  Mineharu Tsukada ,  Etsuro Udagawa ,  Kazuaki Kurihara ,  Hiromitsu Yokoyama ,  Nobuo Kamehara

IPC分类号： C04B35/622 ,  C04B35/632 ,  H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K3/46 ,  H01K3/22

CPC分类号： H01L21/4867 ,  H05K1/0306 ,  H05K1/092 ,  Y10T29/49144 ,  Y10T29/49158

摘要： A process for producing a multilayer ceramic circuit board with copper including the steps of:forming green sheets by doctoring a slurry which includes 100 parts by weight of glass ceramic particles, 5 to 20 parts by weight of a thermally depolymerizable resin binder, 2 to 10 parts by weight of a plasticizer, and up to 2 parts by weight of a fatty acid ethylene oxide adduct type, deflorculant. The glass ceramic includes 20 to 70% by weight of alumina, and 30 to 80% by weight of SiO.sub.2 -B.sub.2 O.sub.3 glass. The process further includes the steps of forming via holes through the green sheets, screen-printing a copper paste on the green sheets, and laminating the green sheets, thereby forming a multilayer structure and firing the multilayer structure in a non-oxidizable atmosphere.

摘要翻译： 一种用于制造具有铜的多层陶瓷电路板的方法，包括以下步骤：通过将包含100重量份的玻璃陶瓷颗粒，5至20重量份的热解聚树脂粘合剂，2至10重量份的浆料 重量份的增塑剂和至多2重量份的脂肪酸环氧乙烷加合物类型的脱氯剂。 玻璃陶瓷包含20至70重量％的氧化铝和30至80重量％的SiO 2 -B 2 O 3玻璃。 该方法还包括以下步骤：在生片上形成通孔，在生片上丝网印刷铜膏，并层压生片，由此形成多层结构，并在不可氧化的气氛中烧结多层结构。