公开(公告)号：US20100115628A1

公开(公告)日：2010-05-06

申请号：US12616917

申请日：2009-11-12

申请人： Jin Li ,  Yi Cui

发明人： Jin Li ,  Yi Cui

IPC分类号： H04L9/00

CPC分类号： H04L65/4076 ,  H04L29/06027 ,  H04L65/607 ,  H04L67/1002 ,  H04L67/101 ,  H04L67/104 ,  H04L67/1068 ,  H04L67/108 ,  H04L67/1091 ,  H04L67/1095 ,  H04L69/14

摘要： A DRM scheme that may be optionally invoked by the owner. With the DRM protection turned on, the media is encrypted before it is distributed in a P2P network, and is decrypted prior to its use (play back). The peers may still efficiently distribute and serve without authorization from the owner. Nevertheless, when the media is used (played back), the client node must seek proper authorization from the owner. The invention further provides a hierarchical DRM scheme wherein each packet of the media is associated with a different protection level. In the hierarchical DRM scheme of the invention there is usually an order of the protection level. As a result, in one embodiment of the invention, the decryption key of a lower protection layer is the hash of the decryption key at the higher protection level. That way, a user granted access to the high protection layer may simply hold a single license of that layer, and obtain decryption keys of that layer and below. The invention further provides for a process for managing digital rights to a scalable media file wherein a different encryption/decryption key is used to encrypt each truncatable media packet with a base layer without requiring additional storage space to store the key.

摘要翻译： 可以由所有者可选地调用的DRM方案。 DRM保护启用后，媒体在分发到P2P网络之前进行加密，并在使用前进行解密（播放）。 同行可能仍然有效地分配和服务，未经业主授权。 然而，当使用（播放）媒体时，客户机节点必须向所有者寻求适当的授权。 本发明还提供了分层DRM方案，其中媒体的每个分组与不同的保护级别相关联。 在本发明的分层DRM方案中，通常具有保护级别的顺序。 结果，在本发明的一个实施例中，较低保护层的解密密钥是较高保护级别的解密密钥的散列。 这样一来，授权访问高保护层的用户可以简单地保持该层的单一许可，并且获得该层及其以下的解密密钥。 本发明还提供了一种用于管理可扩展媒体文件的数字权利的过程，其中使用不同的加密/解密密钥来加密具有基本层的每个可截断媒体分组，而不需要额外的存储空间来存储密钥。

公开(公告)号：US20100022012A1

公开(公告)日：2010-01-28

申请号：US12571371

申请日：2009-09-30

申请人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： G01N33/44 ,  H01L29/66

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

摘要翻译： 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。 描述了纳米检测器器件。

公开(公告)号：US20090042102A1

公开(公告)日：2009-02-12

申请号：US11837291

申请日：2007-08-10

申请人： Yi Cui ,  Candace K. Chan

发明人： Yi Cui ,  Candace K. Chan

IPC分类号： H01M4/36 ,  H01M4/66 ,  H01M6/00

CPC分类号： H01M10/052 ,  H01M4/0421 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/661 ,  H01M4/75 ,  Y02E60/122 ,  Y02T10/7011 ,  Y10T29/49108

摘要： A variety of methods and apparatus are implemented in connection with a battery. According to one such arrangement, an apparatus is provided for use in a battery in which ions are moved. The apparatus comprises a substrate and a plurality of growth-rooted nanowires. The growth-rooted nanowires extend from the substrate to interact with the ions.

摘要翻译： 结合电池实现各种方法和装置。 根据一种这样的布置，提供了一种用于其中离子移动的电池中的装置。 该装置包括基底和多根生长根的纳米线。 生长根的纳米线从衬底延伸以与离子相互作用。

公开(公告)号：US20080211040A1

公开(公告)日：2008-09-04

申请号：US12038794

申请日：2008-02-27

申请人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： H01L29/16 ,  H01L21/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

摘要翻译： 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。 描述了纳米检测器器件。

公开(公告)号：US07385267B2

公开(公告)日：2008-06-10

申请号：US11582167

申请日：2006-10-17

申请人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenji Liang

发明人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenji Liang

IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

摘要翻译： 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。 描述了纳米检测器器件。

公开(公告)号：US20070252136A1

公开(公告)日：2007-11-01

申请号：US11824618

申请日：2007-07-02

申请人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L31/109

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US07211464B2

公开(公告)日：2007-05-01

申请号：US11082372

申请日：2005-03-17

申请人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L51/40 ,  D01C5/00 ,  D01F9/12

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US20060054936A1

公开(公告)日：2006-03-16

申请号：US11012549

申请日：2004-12-15

申请人： Charles Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： H01L27/10

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

公开(公告)号：US09894845B2

公开(公告)日：2018-02-20

申请号：US14008550

申请日：2012-03-28

申请人： Jared Aller ,  Beau Oyler ,  Yi Cui

发明人： Jared Aller ,  Beau Oyler ,  Yi Cui

IPC分类号： A01G9/02 ,  A47G7/04 ,  B65D21/02 ,  B65D25/22

CPC分类号： A01G9/02 ,  A01G9/022 ,  A47G7/044 ,  A47G2200/106 ,  B65D21/0205 ,  B65D25/22

摘要： A modular magnetic storage system including a container attachable to a surface, the container including a vessel having a top end, a bottom end, a wall and a magnet housing, the bottom end being positioned opposite to the top end, the wall extending between the bottom end and the top end, the wall and the bottom end defining a cavity, the top end defining an opening in the vessel, and the magnet housing defining a recess; a magnet disposed within the recess; and a resilient cover positioned over the magnet housing, the resilient cover providing a coefficient of friction between the resilient cover and the surface to maintain a position of the vessel on the surface.

公开(公告)号：US09029015B2

公开(公告)日：2015-05-12

申请号：US13482796

申请日：2012-05-29

申请人： Mauro Pasta ,  Colin Wessells ,  Robert A. Huggins ,  Yi Cui

发明人： Mauro Pasta ,  Colin Wessells ,  Robert A. Huggins ,  Yi Cui

IPC分类号： H01M4/58 ,  H01G9/00 ,  H01M4/36 ,  H01M4/62 ,  H01G11/62 ,  H01G11/50 ,  H01G15/00 ,  H01M4/24

CPC分类号： H01M4/362 ,  H01G11/50 ,  H01G11/62 ,  H01G15/00 ,  H01M4/24 ,  H01M4/62

摘要： An electrochemical energy storage device includes a cathode, an anode, and an electrolyte disposed between the cathode and the anode. The anode includes a capacitive material as a majority component, and further includes an electrochemically active material as a minority component, such that an operating potential of the anode is configured according to a reaction potential of the electrochemically active material.

摘要翻译： 电化学储能装置包括阴极，阳极和设置在阴极和阳极之间的电解质。 阳极包括作为主要组分的电容材料，并且还包括作为少数组分的电化学活性材料，使得根据电化学活性材料的反应电位配置阳极的操作电位。