公开(公告)号：US20110143514A1

公开(公告)日：2011-06-16

申请号：US12754451

申请日：2010-04-05

Applicant: Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

Inventor： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC: H01L21/28

CPC classification number: H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

Abstract: Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

公开(公告)号：US20110001669A1

公开(公告)日：2011-01-06

申请号：US12807601

申请日：2010-09-08

Applicant: Yu-Jen Wang ,  Wei-Bin Lee

Inventor： Yu-Jen Wang ,  Wei-Bin Lee

IPC: H01Q5/00 ,  H01Q9/04 ,  H01Q1/24

CPC classification number: H01Q1/2275 ,  H01Q5/371 ,  H01Q9/42

Abstract: A dual-band antenna for use in a wireless network device comprises first, second, and third radiators. The first and second radiators are connected by a stand portion. The second radiator is a generally C-shaped plate having a connecting section and a free-end portion. A ground end and an input end are provided at predetermined positions of the connecting section and are respectively and electrically connected to a grounding portion and a control circuit of a substrate. The free-end portion overlaps with the orthogonal projection of the first radiator and is parallel to the first radiator. The third radiator is electrically connected to the second radiator via a conductive post and is parallel to the second radiator. The second and third radiators are provided on the substrate while the first radiator is provided outside the substrate. The first, second, and third radiators are parallel to and spaced apart from one another.

Abstract translation: 用于无线网络设备的双频天线包括第一，第二和第三散热器。 第一和第二散热器通过支架部分连接。 第二散热器是具有连接部和自由端部的大致C字形的板。 接地端和输入端设置在连接部分的预定位置处，并分别电连接到基板的接地部分和控制电路。 自由端部分与第一散热器的正交投影重叠并且平行于第一散热器。 第三散热器经由导电柱电连接到第二散热器并且平行于第二散热器。 第二和第三散热器设置在基板上，而第一散热器设置在基板的外部。 第一，第二和第三散热器彼此平行并间隔开。

公开(公告)号：US20100289382A1

公开(公告)日：2010-11-18

申请号：US12843239

申请日：2010-07-26

Applicant: Yi-Cheng CHEN ,  Yu-Jen Wang ,  Chien Li ,  Chien-Shien Yeh

Inventor： Yi-Cheng CHEN ,  Yu-Jen Wang ,  Chien Li ,  Chien-Shien Yeh

IPC: H02N2/04

CPC classification number: H02N2/026 ,  H02N2/002 ,  H02N2/0055

Abstract: An ultrasonic linear motor includes a substrate; a vibrator disposed on the substrate having an oblique or curved face at two sides thereof; and a slider having clamping portions at two sides thereof for correspondingly contacting with the two side faces of the vibrator and the substrate surfaces, wherein the vibrator is for generating a driving force to the slider while connecting with a power supply, such that the clamping portions of the slider slides with respect to the two side surfaces of the vibrator and with respect to the substrate surface, thereby generating a linear translation. The present invention adopts a simple structure having few elements that enables easy manufacturing and integration with other elements, thus reducing manufacturing cost.

Abstract translation: 超声波线性电动机包括：基板; 设置在所述基板上的振动器，在其两侧具有倾斜或弯曲面; 以及滑块，其具有在其两侧的夹持部分，用于相应地接触所述振动器的两个侧面和所述基板表面，其中所述振动器用于在与电源连接的同时向所述滑块产生驱动力，使得所述夹紧部分 滑块相对于振动器的两个侧表面相对于基板表面滑动，从而产生线性平移。 本发明采用具有很少元件的简单结构，能够容易地制造和与其它元件集成，从而降低制造成本。

公开(公告)号：US20100265759A1

公开(公告)日：2010-10-21

申请号：US12687720

申请日：2010-01-14

Applicant: Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

Inventor： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC: G11C11/00 ,  G11C11/14

CPC classification number: G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.

Abstract translation: 操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）器件的MRAM单元和具有串联耦合到MTJ器件的源极 - 漏极路径的字线选择器。 负极衬底偏置电压连接到字线选择器的主体以增加字线选择器的驱动电流。 字线选择器的阈值电压也减小。

公开(公告)号：US20100258886A1

公开(公告)日：2010-10-14

申请号：US12422579

申请日：2009-04-13

Applicant: Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

Inventor： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

IPC: H01L29/82 ,  H01L21/00

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: The present disclosure provides a semiconductor memory device. The device includes a bottom electrode over a semiconductor substrate; an anti-ferromagnetic layer disposed over the bottom electrode; a pinned layer disposed over the anti-ferromagnetic layer; a barrier layer disposed over the pinned layer; a first ferromagnetic layer disposed over the barrier layer; a buffer layer disposed over the first ferromagnetic layer, the buffer layer including tantalum; a second ferromagnetic layer disposed over the buffer layer; and a top electrode disposed over the second ferromagnetic layer.

Abstract translation: 本公开提供一种半导体存储器件。 该器件包括在半导体衬底上的底部电极; 设置在底部电极上的反铁磁层; 设置在反铁磁层上的钉扎层; 设置在被钉扎层上的阻挡层; 设置在阻挡层上的第一铁磁层; 设置在所述第一铁磁层上的缓冲层，所述缓冲层包括钽; 设置在所述缓冲层上的第二铁磁层; 以及设置在第二铁磁层上的顶电极。

公开(公告)号：US20100139767A1

公开(公告)日：2010-06-10

申请号：US12472359

申请日：2009-05-26

Applicant: Jui-Ching Hsieh ,  Pin Chang ,  Chung-De Chen ,  Li-Chi Pan ,  Yu-Jen Wang ,  Chin-Horng Wang

Inventor： Jui-Ching Hsieh ,  Pin Chang ,  Chung-De Chen ,  Li-Chi Pan ,  Yu-Jen Wang ,  Chin-Horng Wang

IPC: H01L31/024 ,  H01L23/34 ,  H01L33/00 ,  H01L21/50

CPC classification number: H01L23/3672 ,  H01L23/42 ,  H01L31/052 ,  H01L33/62 ,  H01L33/641 ,  H01L33/642 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/16 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/013

Abstract: A chip package structure including a heat dissipation substrate, a chip and a heterojunction heat conduction buffer layer is provided. The chip is disposed on the heat dissipation substrate. The heterojunction heat conduction buffer layer is disposed between the heat dissipation substrate and the chip. The heterojunction heat conduction buffer layer includes a plurality of pillars perpendicular to the heat dissipation substrate. The aspect ratio of each pillar is between about 3:1 and 50:1.

Abstract translation: 提供了包括散热基板，芯片和异质结导热缓冲层的芯片封装结构。 芯片设置在散热基板上。 异质结导热缓冲层设置在散热基板和芯片之间。 异质结导热缓冲层包括垂直于散热基板的多个支柱。 每个柱的纵横比在约3:1至50:1之间。

公开(公告)号：US07723128B2

公开(公告)日：2010-05-25

申请号：US12032973

申请日：2008-02-18

Applicant: Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

Inventor： Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

IPC: H01L21/00

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L43/08 ,  H01L43/12

Abstract: A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.

Abstract translation: 形成集成电路的方法包括形成磁隧道结（MTJ）层; 蚀刻MTJ层以形成MTJ电池; 以及在MTJ电池的侧壁上形成电介质覆盖层，其中形成电介质覆盖层的步骤是用蚀刻MTJ层的步骤进行的。

公开(公告)号：US20100083746A1

公开(公告)日：2010-04-08

申请号：US12420166

申请日：2009-04-08

Applicant: Chung-De Chen ,  Yu-Jen Wang ,  Chien Li ,  Shih-Hao Wang ,  Pin Chang

Inventor： Chung-De Chen ,  Yu-Jen Wang ,  Chien Li ,  Shih-Hao Wang ,  Pin Chang

IPC: B60C23/02 ,  F03G7/08

CPC classification number: H02K35/02

Abstract: A swinging apparatus comprising an energy provider and a swinging mechanism disposed thereon. By means of adjusting the size and shape of the swinging mechanism and adjusting a distance between the swinging mechanism and the energy provider so as to control the ratio of the distance between the swinging mechanism and the energy provider to a characteristic value corresponding to the swing mechanism in a range between 4 and 0.25, the swinging frequency of the swinging mechanism may be adjusted automatically to comply with the variation of the motion frequency of the energy provider. The present invention further provides an energy harvester to work with the swinging apparatus and a coil to generate an induced current for power generation during the swing of the swing mechanism. In the present invention, the natural frequency of the swing mechanism may be adjusted according to the rotational velocity of the energy provider.

Abstract translation: 一种摆动装置，包括能量供应器和设置在其上的摆动机构。 通过调节摆动机构的尺寸和形状并调节摆动机构与能量提供者之间的距离，以便控制摆动机构与能量提供者之间的距离与对应于摆动机构的特性值的比率 在4和0.25之间的范围内，可以自动调节摆动机构的摆动频率以符合能量提供者的运动频率的变化。 本发明还提供一种与摆动装置一起工作的能量收集器和一个线圈，用于在摆动机构摆动期间产生用于发电的感应电流。 在本发明中，摆动机构的固有频率可以根据能量提供者的旋转速度进行调节。

公开(公告)号：US20090303779A1

公开(公告)日：2009-12-10

申请号：US12133865

申请日：2008-06-05

Applicant: Young-Shying Chen ,  Yung-Hung Wang ,  Yu-Jen Wang ,  Chun-Jung Lin

Inventor： Young-Shying Chen ,  Yung-Hung Wang ,  Yu-Jen Wang ,  Chun-Jung Lin

IPC: G11C11/02

CPC classification number: G11C11/161 ,  G11C11/1659

Abstract: An integrated circuit structure includes a first fixed magnetic element; a second fixed magnetic element; and a composite free magnetic element between the first and the second fixed magnetic elements. The composite free magnetic element includes a first free layer and a second free layer.

Abstract translation: 集成电路结构包括第一固定磁性元件; 第二固定磁性元件; 以及第一和第二固定磁性元件之间的复合自由磁性元件。 复合自由磁性元件包括第一自由层和第二自由层。

公开(公告)号：US20090290410A1

公开(公告)日：2009-11-26

申请号：US12537093

申请日：2009-08-06

Applicant: Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

Inventor： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

IPC: G11C11/00 ,  G11C11/14

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675

Abstract: The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

Abstract translation: 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。