公开(公告)号：US10348056B2

公开(公告)日：2019-07-09

申请号：US15736631

申请日：2016-03-09

申请人： FORSCHUNGSVERBUND BERLIN E.V.

发明人： Jörg Fricke ,  Götz Erbert ,  Paul Crump ,  Jonathan Decker

IPC分类号： H01S5/12 ,  H01S5/20 ,  H01S5/026

摘要： Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein dres is a distance of the trench to the active layer, w is a width of the trench and Δn is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

公开(公告)号：US09927423B2

公开(公告)日：2018-03-27

申请号：US14642776

申请日：2015-03-10

申请人： MAX-DELBRUECK-CENTRUM FUER MOLEKULARE MEDIZIN ,  Forschungsverbund Berlin e.V.

发明人： Thomas Jentsch ,  Tobias Stauber ,  Felizia K. Voss

IPC分类号： G01N33/50 ,  G01N33/68 ,  C07K14/705

CPC分类号： G01N33/502 ,  C07K14/705 ,  G01N33/6872 ,  G01N2500/10

摘要： The invention relates to a method for the identification of a channel modulator, such as an agonist or antagonist, that interacts with one or more or LRRC8A, LRRC8B, LRRC8C, LRRC8D and/or LRRC8E and/or protein complexes thereof. The invention further relates to an isolated heteromeric protein complex comprising one or more or LRRC8A, LRRC8B, LRRC8C, LRRC8D and/or LRRC8E for use in such methods, in addition to kits suitable for carrying out such methods. The invention therefore relate preferably to the use of LRRC8 proteins and complexes thereof for the identification of VRAC (VSOAC) modulators.

公开(公告)号：US09768356B2

公开(公告)日：2017-09-19

申请号：US15105541

申请日：2014-12-17

申请人： FORSCHUNGSVERBUND BERLIN E.V.

发明人： Sven Einfeldt ,  Luca Redaelli ,  Michael Kneissl

IPC分类号： H01L33/40 ,  H01L21/285 ,  H01L29/45 ,  H01S5/22 ,  H01L33/36 ,  H01S5/323 ,  H01L33/32 ,  H01L33/38 ,  H01L33/58 ,  H01L29/20 ,  H01S5/042 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341

摘要： A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact (60) on a surface (11) of a semiconductor (10) and has the steps of: applying a metal layer (20) of palladium onto the semiconductor surface (11), applying a mask (40, 50) onto the metal layer (20), and structuring the palladium of the metal layer (20) using the mask (40, 50), wherein lateral deposits (21) of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits (21) and the structured metal layer (20′) after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.

公开(公告)号：US20160024023A1

公开(公告)日：2016-01-28

申请号：US14869318

申请日：2015-09-29

申请人： The Government of the United States of America as represented by the Secretary of the Department of ,  Forschungsverbund Berlin E.V.

发明人： Marvin C. Gershengorn ,  Susanne Neumann ,  Bruce M. Raaka ,  Craig J. Thomas ,  James Inglese ,  Noel T. Southall ,  Steven Titus ,  Wei Zheng ,  Wenwei Huang ,  Gerd Krause ,  Gunnar Kleinau

IPC分类号： C07D239/91 ,  A61K31/517 ,  A61K51/00

CPC分类号： C07D405/06 ,  A61K31/517 ,  A61K49/0004 ,  A61K51/00 ,  C07D239/91 ,  C07D401/06 ,  C07D405/14 ,  C07D487/04

摘要： Disclosed are oxo-hydroquinazolines that are useful as selective TSHR agonists. The compounds may be used for detecting or treating thyroid cancer, or treating a bone degenerative disorder.

公开(公告)号：US09184235B2

公开(公告)日：2015-11-10

申请号：US14357583

申请日：2012-11-09

申请人： Forschungsverbund Berlin e.V.

发明人： Oliver Brandt ,  Lutz Geelhaar ,  Vladimir Kaganer ,  Martin Woelz

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L27/15 ,  H01L31/109 ,  H01L29/12 ,  H01L33/18 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L31/0352 ,  H01L33/06

CPC分类号： H01L29/122 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/035209 ,  H01L33/06 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (D) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type. A semiconductor device (100) is also described, having at least one column-shaped or wall-shaped semiconductor element (10, 20) on a substrate (30), which can be produced in particular by means of the stated method.

摘要翻译： 描述了一种半导体器件（100）的制造方法，其中在基板（30）上形成有沿主方向（z）延伸的至少一个柱状或壁状半导体器件（10,20），其中 在有源区域（40）中形成有第一晶体类型的至少两个部分（11,13,21,23）和第二晶体类型的一个部分（12,22），每个部分具有相应的预定高度 h1，h2），其中第一和第二晶体类型具有不同的晶格常数，并且第一晶体类型的每个部分具有取决于第二晶体类型的截面中的晶格常数的晶格应变。 根据本发明，垂直于主方向形成第二晶体类型的部分（12,22）和有源区（40）的横向厚度（D）的至少高度（h2） 第一晶体类型的部分（11）之一的晶格应变也取决于第一晶体类型的另一部分（13）中的晶格常数。 还描述了一种半导体器件（100），其在衬底（30）上具有至少一个柱状或壁状半导体元件（10,20），其特别可以通过所述方法制造。

公开(公告)号：US09100113B2

公开(公告)日：2015-08-04

申请号：US14114452

申请日：2012-04-25

申请人： Silvio Kühn ,  Roland Gesche

发明人： Silvio Kühn ,  Roland Gesche

IPC分类号： H04B17/00 ,  G01S5/04 ,  H04B17/21 ,  G01S3/48 ,  G01S3/46

CPC分类号： H04B17/21 ,  G01S3/46 ,  G01S3/48

摘要： A receiver with a local oscillator, a quadrature modulator, a first mixer and a second mixer, wherein a first input of the quadrature modulator is connected to a second signal input of the receiver circuit and a second input of the quadrature modulator is connected to the local oscillator. Further, a first input of the first mixer is connected to a first signal input of the receiver circuit, a second input of the first mixer is connected to an output of the quadrature modulator, and an output of the first mixer is connected to a first signal output of the receiver circuit. A first input of the second mixer is connected to the second signal input, a second input of the second mixer is connected to the output of the quadrature modulator, and an output of the second mixer is connected to a second signal output of the receiver circuit.

摘要翻译： 具有本地振荡器，正交调制器，第一混频器和第二混频器的接收机，其中正交调制器的第一输入端连接到接收机电路的第二信号输入端，正交调制器的第二输入端连接到 本地振荡器。 此外，第一混频器的第一输入连接到接收器电路的第一信号输入端，第一混频器的第二输入端连接到正交调制器的输出，第一混频器的输出端连接到第一混频器的第一输入端 接收机电路的信号输出。 第二混频器的第一输入连接到第二信号输入端，第二混频器的第二输入端连接到正交调制器的输出，第二混频器的输出端连接到接收器电路的第二信号输出端 。

公开(公告)号：US20150125717A1

公开(公告)日：2015-05-07

申请号：US14394858

申请日：2012-04-24

申请人： Zbigniew Galazka ,  Roberto Fornari ,  Reinhard Uecker

发明人： Zbigniew Galazka ,  Roberto Fornari ,  Reinhard Uecker

IPC分类号： C30B30/04 ,  C30B29/16 ,  H01F1/01 ,  C30B11/00

CPC分类号： C30B30/04 ,  C30B11/00 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/14 ,  C30B15/00 ,  C30B29/16 ,  H01F1/01 ,  Y10T117/1004

摘要： A method and apparatus for growing truly bulk In2O3 single crystals from the melt, as well as melt-grown bulk In2O3 single crystals are disclosed. The growth method comprises a controlled decomposition of initially non-conducting In2O3 starting material (23) during heating-up of a noble metal crucible (4) containing the In2O3 starting material (23) and thus increasing electrical conductivity of the In2O3 starting material with rising temperature, which is sufficient to couple with an electromagnetic field of an induction coil (6) through the crucible wall (24) around melting point of In2O3. Such coupling leads to an electromagnetic levitation of at least a portion (23.1) of the liquid In2O3 starting material with a neck (26) formation acting as crystallization seed. During cooling down of the noble metal crucible (4) with the liquid In2O3 starting material at least one bulk In2O3 single crystal (28.1, 28.2) is formed. We named this novel crystal growth method the “Levitation-Assisted Self-Seeding Crystal Growth Method”. The apparatus for growing bulk In2O3 single crystals from the melt comprises an inductively heated thermal system with a noble metal crucible (4) and evacuation passages (22, 22.1) for gaseous decomposition products of In2O3, while keeping very low temperature gradients. Various configurations of the induction coil (6), the noble metal crucible (4) and a lid (12) covering the crucible can be utilized to obtain very low temperature gradients, sufficient evacuation passages and a high levitation force. The electrical properties of the melt grown In2O3 single crystals can be modified in a wide range by at least one heat treatment in suitable atmospheres and appropriate temperatures.

摘要翻译： 公开了一种用于从熔体中生长真正体积的In 2 O 3单晶以及熔融生长的本体In 2 O 3单晶的方法和装置。 生长方法包括在含有In 2 O 3起始材料（23）的贵金属坩埚（4）的加热期间初始不导电的In 2 O 3原料（23）的受控分解，从而增加In 2 O 3起始材料的电导率随着上升 温度足以与感应线圈（6）的电磁场通过坩埚壁（24）在In 2 O 3的熔点附近耦合。 这种耦合导致液体In 2 O 3起始材料的至少一部分（23.1）的电磁悬浮，其中颈部（26）形成作为结晶种子。 在使用液体In 2 O 3起始材料冷却贵金属坩埚（4）时，形成至少一个体积的In 2 O 3单晶（28.1,28.2）。 我们将这种新型晶体生长方法命名为“悬浮辅助自种晶体生长法”。 用于从熔体生长大块In2O3单晶的装置包括用于惰性​​金属坩埚（4）的感应加热热系统和用于In 2 O 3气态分解产物的排气通道（22,22.1），同时保持非常低的温度梯度。 可以利用感应线圈（6），贵金属坩埚（4）和覆盖坩埚的盖（12）的各种构造来获得非常低的温度梯度，足够的排气通道和高悬浮力。 熔体生长的In 2 O 3单晶的电性能可以在适当的气氛和合适的温度下通过至少一种热处理在宽范围内进行改性。

公开(公告)号：US08798109B2

公开(公告)日：2014-08-05

申请号：US13978222

申请日：2011-12-28

申请人： Erbert Götz ,  Hans Wenzel ,  Paul Crump

发明人： Erbert Götz ,  Hans Wenzel ,  Paul Crump

IPC分类号： H01S5/10

CPC分类号： H01S5/2018 ,  H01S5/2031 ,  H01S5/3213 ,  H01S2301/166 ,  H01S2301/18

摘要： A laser diode has a first n-conducting cladding layer, a first n-conducting waveguide layer arranged therein, an active layer is suitable for generating radiation arranged on the first waveguide layer, a second p-conducting waveguide layer, arranged on the active layer, and a second p-conducting cladding layer, arranged on the second waveguide layer the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 μm and the layer thickness of the second waveguide layer is less than 150 nm. The maximum mode intensity of the fundamental mode is in a region outside the active layer, and the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01.

摘要翻译： 激光二极管具有第一n导电包覆层，布置在其中的第一n导电波导层，有源层适于产生布置在第一波导层上的辐射，布置在有源层上的第二导电波导层 以及第二导电包覆层，布置在第二波导层上，第一波导层的层厚度之和，有源层的层厚度和第二波导层的层厚度之和大于1μm， 第二波导层的层厚小于150nm。 基模的最大模式强度在有源层外侧的区域中，第一波导层的折射率与第一包层的折射率之差为0.04〜0.01。

公开(公告)号：US08659815B2

公开(公告)日：2014-02-25

申请号：US13377123

申请日：2010-06-09

申请人： Alexander Sahm ,  Martin Maiwald ,  Christian Fiebig ,  Katrin Paschke

发明人： Alexander Sahm ,  Martin Maiwald ,  Christian Fiebig ,  Katrin Paschke

IPC分类号： G02F1/35

CPC分类号： G02F1/3501 ,  G02F2001/3505 ,  G02F2001/3546 ,  G02F2203/60 ,  Y10T156/10

摘要： The invention relates to an optical bank (1) comprising a carrier (10) for receiving optical components (60, 70) and a crystal (30) that is mechanically connected to the carrier, for changing the frequency of the light irradiated into the crystal (30) from a light source (50). Two rails (12) are arranged essentially in parallel on the carrier (10). The crystal (30) and the carrier (10) are mechanically connected by a surface of the rails (12), facing away from the carrier (10). A heat conducting element (20) is arranged on the crystal, said heat conducting element being applied to the surfaces of the rails (12), that face away from the carrier (10).

摘要翻译： 本发明涉及一种光学存储体（1），其包括用于接收光学部件（60,70）的载体（10）和机械地连接到载体的晶体（30），用于改变照射到晶体中的光的频率 （30）从光源（50）。 两个轨道（12）基本上平行地布置在载体（10）上。 晶体（30）和载体（10）通过轨道（12）的表面机械连接，背离载体（10）。 导热元件（20）布置在晶体上，所述导热元件被施加到轨道（12）的远离载体（10）的表面。

公开(公告)号：US20130128911A1

公开(公告)日：2013-05-23

申请号：US13682848

申请日：2012-11-21

申请人： Forschungsverbund Berlin E.V.

发明人： Olaf BROX ,  Frank Bugge ,  Paul Crump ,  Goetz Erbert ,  Andre Maassdorf ,  Christoph M. Schultz ,  Hans Wenzel ,  Markus Weyers

IPC分类号： H01L33/10 ,  H01S5/187 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L33/005 ,  H01S5/1231 ,  H01S5/187 ,  H01S5/32316 ,  H01S2304/00

摘要： A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

摘要翻译： 具有含铝层的二极管激光器和用于稳定发射波长的布拉格光栅实现了改进的输出/效率。 生长过程分为引入布拉格光栅的两个步骤，其中连续的无铝层和不含铝的掩模层在第一生长工艺之后连续沉积，使得含铝层被连续的铝完全覆盖 - 自由层。 在反应器外部进行结构化，而不含有铝氧化半导体层。 随后，在反应器内进一步蚀刻预构造的半导体表面，并将构造施加到含铝层中。 在这个过程中，在光栅的环境中少量的氧被插入到含铝层的半导体晶体中，与不产生光栅层的二极管激光器相比，二极管激光器的输出和效率没有降低 外延步骤