公开(公告)号：USRE36747E

公开(公告)日：2000-06-27

申请号：US844386

申请日：1997-04-18

Applicant: Katsuhide Manabe ,  Masahiro Kotaki ,  Makoto Tamaki ,  Masafumi Hashimoto

Inventor： Katsuhide Manabe ,  Masahiro Kotaki ,  Makoto Tamaki ,  Masafumi Hashimoto

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L27/14 ,  H01L29/00 ,  H01L31/00 ,  H01L49/00

CPC classification number: H01L33/40 ,  H01L33/0037 ,  H01L33/38 ,  H01L33/32 ,  H01L33/382

Abstract: A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density .[.i.sub.H -layer.]. .Iadd.H-layer.Iaddend.. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.

Abstract translation: GaN化合物半导体的发光二极管从平面发出蓝色光而不是点以改善发光强度。 该二极管包括与高载流子密度n +层相关联的第一电极和与高杂质密度[iH层] H层相关联的第二电极。 这些电极由第一Ni层（110厚），第二Ni层（1000厚），Al层（1500厚），Ti层（1000厚）和第三Ni层（ 2500 ANGSTROM厚）。 双层结构的Ni层允许在它们之间形成缓冲层。 该缓冲层防止Ni层脱落。 Ni层与GaN的直接接触降低了用于发光的驱动电压并增加了发光强度。

公开(公告)号：US5851904A

公开(公告)日：1998-12-22

申请号：US624403

申请日：1996-05-17

Applicant: Reinhard Schwarz ,  Svetoslav Koynov ,  Thomas Fischer

Inventor： Reinhard Schwarz ,  Svetoslav Koynov ,  Thomas Fischer

IPC: H05B33/10 ,  C23C16/22 ,  C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  C23C16/56 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L31/04 ,  H01L31/18 ,  H01L33/00 ,  H01L33/18 ,  H01L33/34 ,  H01L21/36 ,  C30B00/00

CPC classification number: H01L33/34 ,  C23C16/22 ,  C23C16/24 ,  C23C16/44 ,  C23C16/45557 ,  C23C16/56 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1816 ,  H01L31/1824 ,  H01L31/186 ,  H01L33/0033 ,  H01L33/0037 ,  H01L33/0058 ,  H01L33/0095 ,  H01L33/18 ,  H01L2924/0002 ,  Y02E10/545 ,  Y02P70/521

Abstract: The invention relates to a method of manufacturing microcrystalline layers from elements of the principal group IV, particularly Si, Ge, Sn or their alloys such as SiC or SiGe by means of cyclic CVD or related methods, a cycle comprising two steps. a first step for producing an amorphous layer of the element in such a way that compounds and hydrogen are passed under conventional CVD conditions through separate access means into the reactor over the substrate, and in that in a second step, a hydrogen treatment takes place, the supply of the process gas flow, the hydrogen flow and the connection of the CVD reactor to the pump being closed at least intermittently during the second step, so that the hydrogen treatment takes place in a closed CVD process (CC-CVD process) with the quantity of hydrogen or element hydrogen compounds located in the reactor.

Abstract translation: PCT No.PCT / DE94 / 01158 Sec。 371日期1996年5月17日 102（e）日期1996年5月17日PCT 1994年9月29日PCT公布。 出版物WO95 / 09435 日期1995年4月6日本发明涉及通过循环CVD或相关方法从主要组IV的元素，特别是Si，Ge，Sn或它们的合金如SiC或SiGe的元素制造微晶层的方法，包括两个 脚步。 制造元件的非晶层的第一步骤是使化合物和氢气在常规CVD条件下通过单独的进入装置通过衬底上的反应器，并且在第二步骤中进行氢处理， 在第二步骤期间至少间歇地关闭工艺气体流，氢气流和CVD反应器与泵的连接的供应，使得氢气处理在封闭的CVD工艺（CC-CVD工艺）中进行，其中具有 位于反应器中的氢或元素氢化合物的量。

公开(公告)号：US5055363A

公开(公告)日：1991-10-08

申请号：US382239

申请日：1989-07-19

Applicant: Yoshitaka Tomomura ,  Masahiko Kitagawa

Inventor： Yoshitaka Tomomura ,  Masahiko Kitagawa

IPC: H05B33/10 ,  G09F13/22 ,  H01L21/203 ,  H01L21/363 ,  H01L27/15 ,  H01L33/00 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01S5/00 ,  H01S5/327 ,  H05B33/12 ,  H05B33/14

CPC classification number: H01L33/145 ,  G09F13/22 ,  G09F2013/222 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L27/156 ,  H01L33/0037 ,  H01L33/285 ,  Y10S428/901 ,  Y10S428/917

Abstract: The present invention provides an electroluminescent device of a Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.

公开(公告)号：US5037709A

公开(公告)日：1991-08-06

申请号：US382238

申请日：1989-07-19

Applicant: Yoshitaka Tomomura ,  Masahiko Kitagawa

Inventor： Yoshitaka Tomomura ,  Masahiko Kitagawa

IPC: H05B33/10 ,  G09F13/22 ,  H01L21/203 ,  H01L21/363 ,  H01L27/15 ,  H01L33/00 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01S5/00 ,  H01S5/327 ,  H05B33/12 ,  H05B33/14

CPC classification number: H01L33/145 ,  G09F13/22 ,  G09F2013/222 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L27/156 ,  H01L33/0037 ,  H01L33/285 ,  Y10S428/901 ,  Y10S428/917

Abstract: The present invention provides an electroluminescent device of Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.

公开(公告)号：US4975750A

公开(公告)日：1990-12-04

申请号：US60866

申请日：1987-06-12

Applicant: Yutaka Hayashi ,  Eiichi Suzuki

Inventor： Yutaka Hayashi ,  Eiichi Suzuki

IPC: H01L27/00 ,  H01L27/146 ,  H01L27/15 ,  H01L29/08 ,  H01L29/73 ,  H01L29/737 ,  H01L29/78 ,  H01L29/80 ,  H01L29/88 ,  H01L31/00 ,  H01L31/10 ,  H01L31/113 ,  H01L33/04 ,  H01L33/30 ,  H01L33/44

CPC classification number: H01L29/802 ,  H01L27/14681 ,  H01L29/0843 ,  H01L29/7311 ,  H01L29/737 ,  H01L29/88 ,  H01L31/113 ,  H01L33/0037

Abstract: A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region and having a barrier relative to the semiconductor region. The so-formed device exhibits various effects such as amplification, negative resistance, switching, voltage or current generation, photo-electric conversion, and light-emission either upon irradiation with light or upon application of a power source thereon.

Abstract translation: 一种具有夹层结构的半导体器件，其通过使半导体区域和相对区域彼此面对而形成，该薄膜由具有比半导体区域更宽的禁带宽度的物质制成的薄膜，并且相对于 半导体区域。 如此形成的装置在照射光时或在其上施加电源时表现出诸如放大，负电阻，开关，电压或电流产生，光电转换和发光的各种效果。

公开(公告)号：US4508610A

公开(公告)日：1985-04-02

申请号：US584178

申请日：1984-02-27

Applicant: Eva C. Freeman ,  Donald H. Baird

Inventor： Eva C. Freeman ,  Donald H. Baird

IPC: C23C14/06 ,  H01L33/00 ,  H05B33/10 ,  H05B33/14 ,  C23C15/00

CPC classification number: H05B33/145 ,  C23C14/0629 ,  H01L33/0037 ,  H05B33/10

Abstract: A method of coactivating a rare earth activated, electroluminescent zinc sulfide film with activator gas is described. The phosphor film is deposited upon a substrate by co-sputtering from a zinc sulfide target and a rare earth target in an atmosphere such as hydrogen, chlorine, fluorine or bromine, and an inert gas.

Abstract translation: 描述了用活化剂气体共活化稀土活化的电致发光硫化锌膜的方法。 通过在诸如氢，氯，氟或溴的气氛和惰性气体中从硫化锌靶和稀土靶共同溅射将磷光体膜沉积在衬底上。

公开(公告)号：US4197552A

公开(公告)日：1980-04-08

申请号：US586461

申请日：1975-06-12

Applicant: Laurence G. Walker ,  George W. Pratt, Jr.

Inventor： Laurence G. Walker ,  George W. Pratt, Jr.

IPC: H01L27/15 ,  H01L31/113 ,  H01L31/12 ,  H01L33/00 ,  H01S5/30

CPC classification number: H01L31/1133 ,  H01L27/153 ,  H01L31/125 ,  H01L33/0037 ,  H01S5/30

Abstract: Luminescent semiconductor device having a wide-gap semiconductor material substrate (e.g., ZnS), a thin (.ltorsim.100A thick) alkali halide insulating layer (e.g., NaI, KI, LiI) in the substrate and a metal layer on the insulating layer such that the insulating layer is sandwiched between the substrate and the metal layer. The device emits light in the blue and in the green regions of the electromagnetic spectrum.

Abstract translation: 在衬底中具有宽间隙半导体材料衬底（例如，ZnS），薄（不含100A厚）碱性卤化物绝缘层（例如，NaI，KI，LiI）的发光半导体器件和绝缘层上的金属层，使得 绝缘层夹在基板和金属层之间。 该装置在电磁光谱的蓝色和绿色区域发射光。

公开(公告)号：US3978507A

公开(公告)日：1976-08-31

申请号：US578168

申请日：1975-05-16

Applicant: Jacques Fertin

Inventor： Jacques Fertin

IPC: H01L33/00 ,  H01S5/026

CPC classification number: H01L33/0041 ,  H01L33/0037 ,  H01S5/026

Abstract: An electroluminescent semiconductor device having localized emission.The device comprises a p-n diode of which a region is covered with a dielectric layer which itself is covered partly by an electrode polarized with respect to the said region to establish an electric field zone influencing the injected carriers.Application to the localized control of the emission of an electroluminescent diode.

公开(公告)号：US3623026A

公开(公告)日：1971-11-23

申请号：US3623026D

申请日：1969-01-21

Applicant: GEN ELECTRIC

Inventor： ENGELER WILLIAM E ,  GARFINKEL MARVIN

IPC: H01L31/10 ,  H01L27/105 ,  H01L27/146 ,  H01L31/113 ,  H01L31/14 ,  H01L33/00 ,  G11C11/34 ,  G11C11/42 ,  H01L17/00

CPC classification number: H01L27/14643 ,  H01L27/105 ,  H01L31/113 ,  H01L33/0037 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An information storing method and a storing device using a conductor-insulator-semiconductor (CIS) structure as a conductor storage element is disclosed within. The CIS structure is initially charged to predetermined voltage. Minority carriers are controllably generated within the semiconductor in proportional response to an information-bearing signal such as electromagnetic radiation flux. The generated minority carriers move to and are stored at the surface of the semiconductor beneath the conductor due to the electric field. The voltage is reversed, injecting the generated minority carriers into the semiconductor where they recombine with majority carriers. Electromagnetic radiation is produced during the recombination in an amount proportional to the integrated incident electromagnetic radiation flux.