公开(公告)号：US20180371640A1

公开(公告)日：2018-12-27

申请号：US16063391

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Tomoya UTASHIRO ,  Hironori ATSUMI

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/687 ,  C30B25/10 ,  C30B25/14

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

公开(公告)号：US10155195B2

公开(公告)日：2018-12-18

申请号：US15509900

申请日：2015-09-24

Applicant: Primetals Technologies Austria GmbH

Inventor： Gareth Kaps

IPC: B01D19/04 ,  B01D45/00 ,  B01D53/78 ,  B01J8/00 ,  C01B3/00 ,  C30B25/14 ,  B01D47/06 ,  B01D47/10 ,  C21B5/00 ,  C21B5/06 ,  C21B7/00 ,  C21B7/22

Abstract: A gas scrubber cone condition monitoring system has a sealed gas scrubber cone (9) moveably mounted in a gas pipe (1), a collar (5) fixedly mounted radially outward of the cone in the gas pipe and a pressure tap (12) into the sealed cone. The pressure tap is coupled to a condition monitor (17, 18) via an input line (16). An output line (14) from the condition monitor is coupled to a gas pipe (15), downstream of the sealed cone. The condition monitor includes at least one of a pressure gauge and a gas flow meter.

公开(公告)号：US10132001B2

公开(公告)日：2018-11-20

申请号：US14810575

申请日：2015-07-28

Applicant: NuFlare Technology, Inc.

Inventor： Hideshi Takahashi ,  Shinichi Mitani ,  Yuusuke Sato

IPC: C23C16/455 ,  C30B29/40 ,  C30B25/14

Abstract: A vapor phase growth apparatus according to an embodiment includes n reaction chambers, a main gas supply passage supplying a process gas to the n reaction chambers, a main mass flow controller arranged in the main gas supply passage to control a flow rate of the process gas flowing in the main gas supply passage, (n−1) first sub gas supply passages being branches of the main gas supply passage to supply divided process gases to the (n−1) reaction chambers among the n reaction chambers, (n−1) first sub mass flow controllers arranged in the first sub gas supply passages to control flow rates of the process gases flowing in the first sub gas supply passages, and one second sub gas supply passage being a branch of the main gas supply passage to supply a remainder of the process gas to the one reaction chamber other than the (n−1) reaction chambers.

公开(公告)号：US10125433B2

公开(公告)日：2018-11-13

申请号：US15064553

申请日：2016-03-08

Applicant: National University Corporation Tokyo University of Agriculture and Technology

Inventor： Akinori Koukitu ,  Yoshinao Kumagai ,  Hisashi Murakami

IPC: C30B25/14 ,  C30B25/08 ,  C30B29/40 ,  C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B25/16 ,  C30B25/18 ,  C30B25/20 ,  H01L21/02

Abstract: A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1×1017/cm3 or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0×10−3 atm or higher onto the substrate, and growing a GaN crystal in the −C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200° C. or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0×10−3 atm or higher onto the substrate, and growing an AlN crystal in the −C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400° C. or higher.

公开(公告)号：US10096470B2

公开(公告)日：2018-10-09

申请号：US15468848

申请日：2017-03-24

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Yasuyuki Kawada

IPC: C30B25/16 ,  H01L21/02 ,  C23C16/32 ,  C23C16/455 ,  C23C16/02 ,  C30B25/14 ,  C30B25/20 ,  C30B29/36

Abstract: A method of growing a single-crystal, silicon carbide epitaxial film on a silicon carbide substrate by chemical vapor deposition is disclosed that results in a stress value of the epitaxial film within ±7.8 MPa. For example, from the start of the growth of the epitaxial film until completion, introduction of a source gas including a gas containing silicon, a gas containing carbon, and a gas containing chlorine into a reaction chamber and performing epitaxial growth is alternately performed with suspension of the supply of the gas containing silicon and the gas containing carbon into the reaction chamber while furnace temperature is maintained as is during performing processing in a gas atmosphere containing only hydrogen, or hydrogen and hydrogen chloride, whereby the epitaxial film is grown. Employing such a method enables manufacture of a substrate having a silicon carbide epitaxial film with minimal warpage.

公开(公告)号：US20180258552A1

公开(公告)日：2018-09-13

申请号：US15976891

申请日：2018-05-11

Applicant: Mitsubishi Chemical Corporation

Inventor： Yuuki ENATSU ,  Satoru NAGAO ,  Shuichi KUBO ,  Hirotaka IKEDA ,  Kenji FUJITO

IPC: C30B29/40 ,  H01L29/20 ,  H01L21/02 ,  C30B25/02 ,  C30B25/20 ,  C30B25/14

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/14 ,  C30B25/20 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/2003

Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.

公开(公告)号：US10066296B2

公开(公告)日：2018-09-04

申请号：US14990843

申请日：2016-01-08

Applicant: Ceres Technologies, Inc.

Inventor： Egbert Woelk ,  Ronald L. DiCarlo, Jr.

IPC: C23C16/455 ,  C30B25/14 ,  C23C16/448 ,  C23C16/52 ,  C30B25/16 ,  B01F3/02 ,  B01F15/00 ,  C30B29/40

Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

公开(公告)号：US10060047B2

公开(公告)日：2018-08-28

申请号：US14163967

申请日：2014-01-24

Applicant: Sumitomo Chemical Company, Limited

Inventor： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

IPC: C30B25/14 ,  C30B25/02 ,  C30B25/16 ,  H01L29/20 ,  C30B29/40

CPC classification number: C30B25/02 ,  C30B25/14 ,  C30B25/16 ,  C30B25/165 ,  C30B29/406 ,  H01L29/2003

Abstract: A nitride semiconductor crystal producing method, includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

公开(公告)号：US20180209043A1

公开(公告)日：2018-07-26

申请号：US15928622

申请日：2018-03-22

Applicant: APPLIED MATERIALS, INC.

Inventor： SHU-KWAN LAU ,  ZHEPENG CONG ,  MEHMET TUGRUL SAMIR ,  ZHIYUAN YE ,  DAVID K. CARLSON ,  XUEBIN LI ,  ERROL ANTONIO C. SANCHEZ ,  SWAMINATHAN SRINIVASAN

IPC: C23C16/455 ,  C30B25/14

CPC classification number: C23C16/45563 ,  C23C16/45514 ,  C30B25/14

Abstract: Apparatus for processing a substrate in a process chamber are provided here. In some embodiments, a gas injector for use in a process chamber includes a first set of outlet ports that provide an angled injection of a first process gas at an angle to a planar surface, and a second set of outlet ports proximate the first set of outlet ports that provide a pressurized laminar flow of a second process gas substantially along the planar surface, the planar surface extending normal to the second set of outlet ports.

公开(公告)号：US10026612B2

公开(公告)日：2018-07-17

申请号：US15028341

申请日：2014-10-08

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

Inventor： Yusuke Mori ,  Mamoru Imade ,  Masashi Yoshimura ,  Masashi Isemura

IPC: C30B25/02 ,  H01L21/02 ,  C30B25/14 ,  C23C16/30 ,  C23C16/448 ,  C30B25/00 ,  C30B29/40 ,  C23C16/22 ,  H01L29/20 ,  H01L29/32

Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.