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公开(公告)号：US11843044B2
公开(公告)日：2023-12-12
申请号：US17578687
申请日：2022-01-19
发明人： Hong Yu , Alexander M. Derrickson , Judson R. Holt
IPC分类号： H01L29/735 , H01L29/08 , H01L29/417 , H01L29/66
CPC分类号： H01L29/735 , H01L29/0808 , H01L29/0821 , H01L29/41708 , H01L29/6625
摘要： Embodiments of the disclosure provide a bipolar transistor structure on a semiconductor fin. The semiconductor fin may be on a substrate and may have a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. The semiconductor fin includes a first portion and a second portion adjacent the first portion along the length of the semiconductor fin. The second portion is coupled to a base contact. A dopant concentration of the first portion is less than a dopant concentration of the second portion. An emitter/collector (E/C) material is adjacent the first portion along the width of the semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.
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72.发明公开公开(公告)号：US20230395590A1
公开(公告)日：2023-12-07
申请号：US17805697
申请日：2022-06-07
IPC分类号： H01L27/02
CPC分类号： H01L27/0262
摘要： An integrated circuit (IC) structure with a conductive pathway through resistive semiconductor material, e.g., for bipolar transistors, is provided. The IC structure may include a resistive semiconductor material having a first end coupled to a first doped semiconductor material. The first doped semiconductor material has a first doping type. A doped well may be coupled to a second end of the resistive semiconductor material. The doped well has a second doping type opposite the first doping type. A second doped semiconductor material is coupled to the doped well and has the first doping type. The resistive semiconductor material is within a conductive pathway from the first doped semiconductor material to the second doped semiconductor material.
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公开(公告)号：US20230393339A1
公开(公告)日：2023-12-07
申请号：US17834375
申请日：2022-06-07
CPC分类号： G02B6/2934 , G02B6/4215
摘要： Structures including stacked photonics chips and methods of fabricating a structure including stacked photonics chips. The structure comprises a first chip including a first waveguide core, a ring resonator adjacent to a portion of the first waveguide core, and a first dielectric layer over the first waveguide core and the ring resonator. The first dielectric layer has a first surface. The structure further comprises a second chip including a second waveguide core and a second dielectric layer over the second waveguide core. The second dielectric layer has a second surface adjacent to the first surface of the first dielectric layer, and the second waveguide core is positioned adjacent to the ring resonator.
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74.发明授权公开(公告)号：US11837851B2
公开(公告)日：2023-12-05
申请号：US17931933
申请日：2022-09-14
CPC分类号： H01S5/2018 , H01S5/20 , H01S5/2231 , H01S5/2232 , H01S5/3013 , H01S5/021 , H01S5/026 , H01S5/3054 , H01S5/32333
摘要： A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
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公开(公告)号：US11837653B2
公开(公告)日：2023-12-05
申请号：US17555561
申请日：2021-12-20
IPC分类号： H01L29/73 , H01L29/737 , H01L29/08 , H01L29/66 , H01L29/10
CPC分类号： H01L29/737 , H01L29/0821 , H01L29/1008 , H01L29/6625 , H01L29/66242
摘要： Disclosed is a semiconductor structure with a lateral bipolar junction transistor (BJT). This semiconductor structure can be readily integrated into advanced silicon-on-insulator (SOI) technology platforms. Furthermore, to maintain or improve upon performance characteristics (e.g., cut-off frequency (fT)/maximum oscillation frequency (fmax) and beta cut-off frequency) that would otherwise be negatively impacted due to changing of the orientation of the BJT from vertical to lateral, the semiconductor structure can further include a dielectric stress layer (e.g., a tensilely strained layer in the case of an NPN-type transistor or a compressively strained layer in the case of a PNP-type transistor) partially covering the lateral BJT for charge carrier mobility enhancement and the lateral BJT can be configured as a lateral heterojunction bipolar transistor (HBT). Also disclosed is a method for forming the semiconductor structure.
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公开(公告)号：US11835764B2
公开(公告)日：2023-12-05
申请号：US17588440
申请日：2022-01-31
发明人： Shesh Mani Pandey , Yusheng Bian , Judson Holt
CPC分类号： G02B6/136 , G02B2006/12061
摘要： Waveguide structures and methods of fabricating a waveguide structure. The structure includes a first waveguide core, a second waveguide core, and a third waveguide core adjacent to the first waveguide core and the second waveguide core. The third waveguide core is laterally separated from the first waveguide core by a first slot, and the third waveguide core is laterally separated from the second waveguide core by a second slot. The first waveguide core and the second waveguide core comprise a first material, and the third waveguide core comprises a second material that is different in composition from the first material.
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公开(公告)号：US20230387333A1
公开(公告)日：2023-11-30
申请号：US17664741
申请日：2022-05-24
IPC分类号： H01L31/0216 , H01L31/18 , H01L31/105
CPC分类号： H01L31/0216 , H01L31/1804 , H01L31/105 , H01L31/022408
摘要： A photodetector structure includes a first semiconductor material layer on a first portion of a doped well in a substrate. The photodetector structure includes a second semiconductor layer over the first semiconductor layer. The first and second semiconductor material layers may include an undoped semiconductor material. The photodetector structure includes an insulative collar laterally surrounding the first and second semiconductor material layers. The insulative collar may include a varying horizontal thickness. The photodetector structure includes a doped semiconductor material having an opposite doping polarity relative to the doped well, and positioned over the second semiconductor material layer and the insulating collar.
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公开(公告)号：US11828983B2
公开(公告)日：2023-11-28
申请号：US17577162
申请日：2022-01-17
CPC分类号： G02B6/1228 , G02B6/13 , G02B2006/12061
摘要： Structures for a cavity included in a photonics chip and methods of fabricating a structure for a cavity included in a photonics chip. The structure includes a substrate, a back-end-of-line stack having interlayer dielectric layers on the substrate, and a cavity penetrating through the back-end-of-line stack and into the substrate. The cavity includes first sidewalls and second sidewalls, and the second sidewalls have an alternating arrangement with the first sidewalls to define non-right-angle corners.
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公开(公告)号：US11822122B2
公开(公告)日：2023-11-21
申请号：US17462491
申请日：2021-08-31
CPC分类号： G02B6/1225 , G02B1/002 , G02B1/005 , G02B6/125 , G02B2006/1213 , G02B2006/12061 , G02B2006/12147
摘要： The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.
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公开(公告)号：US11815717B2
公开(公告)日：2023-11-14
申请号：US17525293
申请日：2021-11-12
发明人： Vibhor Jain , Nicholas A. Polomoff , Yusheng Bian
CPC分类号： G02B6/122 , G02B6/243 , H01L23/573 , G02B2006/12061 , G02B2006/12126
摘要： The present disclosure relates to semiconductor structures and, more particularly, to a photonic chip security structure and methods of manufacture. The structure includes an optical component and a photonic chip security structure having a vertical wall composed of light absorbing material surrounding the optical component.
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