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    METHOD FOR FORMING A FET DEVICE
    71.
    发明公开
    METHOD FOR FORMING A FET DEVICE 审中-公开

    公开(公告)号：US20230178635A1

    公开(公告)日：2023-06-08

    申请号：US18074294

    申请日：2022-12-02

    Applicant: IMEC VZW

    Inventor： Aryan Afzalian ,  Julien Ryckaert ,  Naoto Horiguchi ,  Boon Teik Chan

    IPC: H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L21/308 ,  H01L21/322 ,  H01L21/02

    CPC classification number: H01L29/66795 ,  H01L29/785 ,  H01L29/0847 ,  H01L29/1033 ,  H01L21/308 ,  H01L21/322 ,  H01L21/0262

    Abstract: A method for forming a FET device is provided, the method including: forming a fin structure; while masking the fin structure from a second side of the fin structure opposite a first side of the fin structure: etching each of first and second fin parts laterally from the first side such that a set of source cavities and a set of drain cavities is formed in first non-channel layers in the first fin part and the second fin part, and subsequently, forming a source body and a drain body, each comprising a respective common body portion along the first side and a set of prongs protruding from the respective common body portion into the source and drain cavities, respectively, and abutting the channel layers; and while masking the fin structure from the first side: etching the third fin part laterally from the second side such that a set of gate cavities extending through the third fin part is formed in second non-channel layers, and subsequently, forming a gate body comprising a common gate body portion along the second side and a set of gate prongs protruding from the common gate body portion into the gate cavities.

    Device and a method for analysis of cells
    73.
    发明授权
    Device and a method for analysis of cells 有权

    公开(公告)号：US11609223B2

    公开(公告)日：2023-03-21

    申请号：US16035574

    申请日：2018-07-13

    Applicant: IMEC VZW

    Inventor： Carolina Mora Lopez

    IPC: G01N33/483 ,  G01N27/414 ,  H03F3/45 ,  B01L3/00 ,  B01J19/00

    Abstract: A device for analysis of cells comprises: an active sensor area (104) presenting a surface for cell growth; a microelectrode array (102) comprising a plurality of pixels (110) in the active sensor area (104), wherein each pixel (110) comprises at least one electrode (120) at the surface, wherein each pixel (110) is configured to control the configuration of the pixel circuitry and set a measurement modality of the pixel; recording circuitry having a plurality of recording channels (130), wherein each pixel (110) is connected to a recording channel (130), wherein each recording channel (130) comprises a reconfigurable component (131), which is selectively controlled between being set to a first mode, in which the reconfigurable component (131) is configured to amplify a received pixel signal, and being set to a second mode, in which the reconfigurable component (131) is configured to selectively pass a frequency band of the received pixel signal.

    MACH-ZEHNDER MODULATOR
    74.
    发明申请
    MACH-ZEHNDER MODULATOR 有权

    公开(公告)号：US20230078976A1

    公开(公告)日：2023-03-16

    申请号：US17800931

    申请日：2021-02-19

    Applicant: UNIVERSITEIT GENT ,  IMEC VZW

    Inventor： Laurens BREYNE

    IPC: G02F1/21 ,  G02F1/225 ,  G02B6/125

    Abstract: An electro-optic Mach-Zehnder modulator comprising a first and a second optical waveguide, and a plurality of pairs of electro-optic phase shifters forming segments, for each pair one phase shifter per optical waveguide, distributed over the length of the optical waveguides, wherein the electro-optic phase shifters are configured for phase-modulating the optical signals. The modulator, moreover, comprising at least one crossing element configured for crossing the optical waveguides between two segments.

    System and Method for Photoacoustic Inspection of an Object
    75.
    发明申请
    System and Method for Photoacoustic Inspection of an Object 有权

    公开(公告)号：US20230067864A1

    公开(公告)日：2023-03-02

    申请号：US17800322

    申请日：2021-02-15

    Applicant: IMEC VZW ,  Universiteit Gent

    Inventor： YanLu Li ,  Roeland Baets

    IPC: G01N29/24 ,  G01N29/46

    Abstract: The disclosure includes a system for photoacoustic inspection of an object. The system includes a broadband emission source configured to generate an emission beam, a direction apparatus including at least one spectrum splitter configured to split the emission beam into at least a first and a second component, the direction apparatus being configured to sequentially direct the respective components to N respective locations on the object at N times to generate N respective acoustic waves within the object. The N respective locations and N times are such that the respective N acoustic waves at least semi-constructively interfere to generate a respective propagating acoustic wave within the object. The system also includes a vibration sensing system configured to detect said respective propagating acoustic waves at a respective detection location on the object.

    TUNABLE HYBRID III-V/IV LASER SENSOR SYSTEM-ON-A CHIP FOR REAL-TIME MONITORING OF A BLOOD CONSTITUENT CONCENTRATION LEVEL
    77.
    发明申请
    TUNABLE HYBRID III-V/IV LASER SENSOR SYSTEM-ON-A CHIP FOR REAL-TIME MONITORING OF A BLOOD CONSTITUENT CONCENTRATION LEVEL 有权

    公开(公告)号：US20230047997A1

    公开(公告)日：2023-02-16

    申请号：US17887981

    申请日：2022-08-15

    Applicant: Brolis Sensor Technology, UAB ,  Universiteit Gent ,  IMEC VZW

    Inventor： Augustinas Vizbaras ,  Kristijonas Vizbaras ,  Ieva Simonyte ,  Günther Roelkens

    IPC: A61B5/1455 ,  G01N21/39

    Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGalnAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

    Method for co-integration of III-V devices with group IV devices
    79.
    发明授权
    Method for co-integration of III-V devices with group IV devices 有权

    公开(公告)号：US11557503B2

    公开(公告)日：2023-01-17

    申请号：US16996413

    申请日：2020-08-18

    Applicant: IMEC VZW

    Inventor： Amey Mahadev Walke ,  Liesbeth Witters

    IPC: H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/8249 ,  H01L27/07

    Abstract: The present disclosure relates to a semi-conductor structure and method for co-integrating a III-V device with a group IV device on a SixGe1-x(100) substrate. The method includes: (a) providing a SixGe1-x(100) substrate, where x is from 0 to 1; (b) selecting a first region for forming therein a group IV device and a second region for forming therein a III-V device, the first and the second region each comprising a section of the SixGe1-x(100) substrate; (c) forming a trench isolation for at least the III-V device; (d) providing a SiyGe1-y(100) surface in the first region, where y is from 0 to 1; (e) at least partially forming the group IV device on the SiyGe1-y(100) surface in the first region; (f) forming a trench in the second region which exposes the SixGe1-x(100) substrate, the trench having a depth of at least 200 nm, at least 500 nm, at least 1 μm, usually at least 2 μm, such as 4 μm, with respect to the SiyGe1-y(100) surface in the first region; (g) growing a III-V material in the trench using aspect ratio trapping; and (h) forming the III-V device on the III-V material, the III-V device comprising at least one contact region at a height within 100 nm, 50 nm, 20 nm, usually 10 nm, of a contact region of the group IV device.

    MAGNETOELECTRIC DEVICE
    80.
    发明申请
    MAGNETOELECTRIC DEVICE 有权

    公开(公告)号：US20230012461A1

    公开(公告)日：2023-01-12

    申请号：US17811547

    申请日：2022-07-08

    Applicant: IMEC VZW

    Inventor： Hanns Christoph ADELMANN ,  Florin CIUBOTARU

    IPC: H01L41/12 ,  H01L41/20 ,  H01L41/047

    Abstract: A magnetoelectric (“ME”) device is disclosed. In one aspect, the ME device includes a first piezoelectric substrate portion and a second piezoelectric substrate portion; a magnetostrictive body with a magnetization oriented in a first direction, the magnetostrictive body arranged on and extending between the first and second portions; a pair of input electrodes arranged on the first portion; and a pair of output electrodes arranged on the second portion. The input electrodes are configured to induce a fringing electric field extending between the input electrodes via the first portion, thereby causing a deformation of the first portion which in turn causes a deformation of the magnetostrictive body such that the magnetization thereof is re-oriented to a second direction due to a reverse magnetostriction. An output voltage is induced between the output electrodes by a deformation of the second portion caused by the re-orientation of the magnetization of the magnetostrictive body.

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