Communication system using joint leakage suppression scheme with low complexity
    73.
    发明授权
    Communication system using joint leakage suppression scheme with low complexity 有权
    具有低复杂度的联合泄漏抑制方案的通信系统

    公开(公告)号:US08416738B2

    公开(公告)日:2013-04-09

    申请号:US12895190

    申请日:2010-09-30

    CPC classification number: H04B7/024

    Abstract: A communication method for at least one mobile station that includes a target mobile station that performs a Cooperative Multi-Point (CoMP) communication with at least two base stations, is provided. The communication method includes determining a beamforming vector used by the at least two base stations based on channel vectors and at least one channel matrix such that a signal-to-leakage-plus-noise-ratio (SLNR) for a target antenna from among antennas of a target mobile station is maximized. A Cholesky factorization may be used to determine an optimal beamforming vector with a low complexity.

    Abstract translation: 提供一种用于至少一个移动站的通信方法,该移动站包括与至少两个基站进行协作多点(CoMP)通信的目标移动站。 通信方法包括基于信道向量和至少一个信道矩阵确定由至少两个基站使用的波束成形向量,使得从天线中的目标天线的信号与泄漏加噪声比(SLNR) 目标移动台的最大化。 可以使用Cholesky因式分解来确定具有低复杂度的最优波束形成向量。

    BOARD ON CHIP PACKAGE SUBSTRATE AND MANUFACTURING METHOD THEREOF
    74.
    发明申请
    BOARD ON CHIP PACKAGE SUBSTRATE AND MANUFACTURING METHOD THEREOF 审中-公开
    芯片包装基板及其制造方法

    公开(公告)号:US20120244662A1

    公开(公告)日:2012-09-27

    申请号:US13491279

    申请日:2012-06-07

    CPC classification number: H05K3/00 H01L2224/16225 H05K3/30 Y10T29/49124

    Abstract: A single-layer board on chip package substrate and a manufacturing method thereof are disclosed. In accordance with an embodiment of the present invention, the single-layer board on chip package substrate includes an insulator, a circuit pattern and a flip-chip bonding pad, which are formed on an upper surface of the insulator, a conductive bump, which is in contact with a lower surface of the circuit pattern and penetrates through the insulator, a solder resist layer, which is formed on the upper surface of the insulator such that at least a portion of the flip-chip bonding pad is exposed, and a flip-chip bonding bump, which is formed on an upper surface of the flip-chip bonding pad in order to make a flip-chip connection with an electronic component.

    Abstract translation: 公开了一种单层片上封装衬底及其制造方法。 根据本发明的实施例,片上封装衬底上的单层板包括形成在绝缘体上表面上的绝缘体,电路图案和倒装焊接焊盘,导体凸块, 与电路图案的下表面接触并穿透绝缘体,阻焊层,其形成在绝缘体的上表面上,使得至少一部分倒装芯片接合焊盘露出,并且 倒装芯片焊接凸块,其形成在倒装焊盘的上表面上,以便与电子部件进行倒装芯片连接。

    Manufacturing method of printed circuit board
    75.
    发明授权
    Manufacturing method of printed circuit board 有权
    印刷电路板的制造方法

    公开(公告)号:US08197702B2

    公开(公告)日:2012-06-12

    申请号:US12508224

    申请日:2009-07-23

    Abstract: Disclosed is a method of manufacturing a printed circuit board. The method of manufacturing a printed circuit board having a via for interlayer connection can include forming a circuit pattern on one side of a carrier, pressing one side of the carrier into one side of the insulator, removing the carrier, forming a hole penetrating through the insulator by processing one end of the circuit pattern, and forming a conductive material inside the hole to have the conductive material correspond to the via.

    Abstract translation: 公开了印刷电路板的制造方法。 制造具有用于层间连接的通孔的印刷电路板的方法可以包括在载体的一侧上形成电路图案,将载体的一侧压在绝缘体的一侧,去除载体,形成贯穿该载体的孔 通过处理电路图案的一端,并且在孔内形成导电材料以使导电材料对应于通孔。

    NON-VOLATILE MEMORY DEVICE
    76.
    发明申请
    NON-VOLATILE MEMORY DEVICE 审中-公开
    非易失性存储器件

    公开(公告)号:US20110260234A1

    公开(公告)日:2011-10-27

    申请号:US13172578

    申请日:2011-06-29

    CPC classification number: H01L29/7881 H01L29/66825

    Abstract: A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.

    Abstract translation: 半导体器件可以包括设置在衬底的有源区上的隧道绝缘层,设置在衬底的表面部分中以限定有源区的场绝缘图案,每个场绝缘图案具有形成在上表面部分的上凹部 设置在隧道绝缘层上的堆叠结构,以及设置在与堆叠结构相邻的有源区的表面部分处的杂质扩散区。

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