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    Semiconductor integrated circuits including optoelectronic device for changing optical phase
    2.
    发明授权
    Semiconductor integrated circuits including optoelectronic device for changing optical phase 有权
    包括用于改变光学相位的光电器件的半导体集成电路

    公开(公告)号：US08422834B2

    公开(公告)日：2013-04-16

    申请号：US12746167

    申请日：2008-06-03

    Applicant: Jeong-Woo Park ,  Gyung-Ock Kim ,  Mi-Ran Park ,  Jong-Bum You

    Inventor： Jeong-Woo Park ,  Gyung-Ock Kim ,  Mi-Ran Park ,  Jong-Bum You

    IPC: G02F1/035 ,  G02F1/295 ,  G02B6/10 ,  G02B6/12

    CPC classification number: G02F1/218 ,  G02F2001/212 ,  G02F2201/302

    Abstract: Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 μm to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.

    Abstract translation: 提供了一种半导体集成电路。 半导体集成电路包括设置在基板上并且包括光波导部分和一对凹部的半导体图案。 光波导部分的厚度范围为约0.05μm至约0.5μm。 凹部设置在光波导部分的两侧，并且具有比光波导部分更薄的厚度。 第一掺杂区域和第二掺杂区域分别设置在凹部中。 第一和第二掺杂区域分别掺杂有第一导电型掺杂剂和第二导电型掺杂剂。 在至少光波导部分中形成本征区域以接触第一和第二掺杂区域。

    Electro-optic device
    4.
    发明授权
    Electro-optic device 有权
    电光装置

    公开(公告)号：US08320037B2

    公开(公告)日：2012-11-27

    申请号：US12652623

    申请日：2010-01-05

    Applicant: Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

    Inventor： Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

    IPC: G02F1/01 ,  H01L31/0232

    CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212

    Abstract: An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.

    Abstract translation: 提供了一种电光装置。 电光器件包括设置在第一导电类型半导体层和施加反向通孔电压的第二导电类型半导体层之间的结层。 第一导电型半导体层和第二导电类型半导体层之间具有约2至4倍的掺杂浓度差，因此可以提供优化用于高速度，低功耗和高集成度的电光装置。

    MULTIPURPOSE COVER SUPPORTER
    9.
    发明申请
    MULTIPURPOSE COVER SUPPORTER 审中-公开
    多用途支架

    公开(公告)号：US20100201113A1

    公开(公告)日：2010-08-12

    申请号：US12678986

    申请日：2008-09-19

    Applicant: Jeong Woo Park

    Inventor： Jeong Woo Park

    IPC: B42D3/00

    CPC classification number: B42F13/402 ,  B42D3/126 ,  B42D3/16

    Abstract: A multipurpose cover supporter includes a front cover (20) and a rear cover (30) foldably connected with each other by a main connection part (10); first front and rear foldable covers (25 and 35) connected to outer surfaces of the front and rear covers (20 and 30) along first folding lines (25a and 35a) and overlapping with the front and rear covers (20 and 30); second front and rear foldable covers (26 and 36) connected to the outer surfaces of the front and rear covers (20 and 30) along second folding lines (26a and 36a) above the first front and rear foldable covers (25 and 35) and overlapping with the front and rear covers (20 and 30); first angle maintaining parts connected between the front and rear covers (20 and 30) and the first front and rear foldable covers (25 and 35) to maintain an angle defined therebetween when they are unfolded from each other; and second angle maintaining parts connected between the front and rear covers (20 and 30) and the second front and rear foldable covers (26 and 36) to maintain an angle defined therebetween when they are unfolded from each other.

    Abstract translation: 多功能盖支撑件包括通过主连接部分（10）彼此可折叠地连接的前盖（20）和后盖（30）。 沿着第一折叠线（25a和35a）连接到前盖和后盖（20和30）的外表面并与前盖和后盖重叠的第一前后可折叠盖（25和35）; 第二前后可折叠盖（26和36），其沿着第一前后可折叠盖（25和35）上方的第二折叠线（26a和36a）连接到前盖和后盖（20和30）的外表面，以及 与前后盖（20和30）重叠; 连接在前盖和后盖（20,30）之间的第一角度保持部分和第一前后可折叠盖（25和35），以在彼此展开时保持其间限定的角度; 以及连接在前盖和后盖（20,30）之间的第二角度保持部分和第二前后可折叠盖（26和36），以在它们彼此展开时保持其间限定的角度。

    Silicon semiconductor based high-speed ring optical modulator
    10.
    发明授权
    Silicon semiconductor based high-speed ring optical modulator 失效
    硅半导体高速环形光调制器

    公开(公告)号：US07646942B2

    公开(公告)日：2010-01-12

    申请号：US11833004

    申请日：2007-08-02

    Applicant: Jeong Woo Park ,  Gyungock Kim ,  Hyun Soo Kim ,  Bongki Mheen

    Inventor： Jeong Woo Park ,  Gyungock Kim ,  Hyun Soo Kim ,  Bongki Mheen

    IPC: G02F1/035 ,  G02B6/26

    CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2001/0152 ,  G02F2203/15

    Abstract: Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.

    Abstract translation: 提供了一种基于硅半导体的高速环形光调制器，其具有增加的光调制速度。 高速环形光调制器包括环形光波导，其包括折射率变化的部分，即折射率变化部分和具有恒定折射率的光波导。 折射率变化部分包括双极晶体管。 因此，可以高速地将载流子提供给发射光的折射率变化部分放出，从而可以提高光调制速度。

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