-
公开(公告)号：US09187822B2
公开(公告)日：2015-11-17
申请号：US13825579
申请日：2011-09-05
申请人： Yumiko Kawano , Susumu Arima
发明人： Yumiko Kawano , Susumu Arima
CPC分类号： C23C16/06 , C23C16/305 , C23C16/44 , C23C16/45523 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.
摘要翻译： 公开了一种形成Ge-Sb-Te膜的方法，其中将衬底设置在处理室内，气态Ge材料，气态Sb材料和Te材料被引入处理室中，使得Ge 由Ge2Sb2Te5形成的-Sb-Te膜通过CVD形成在基板上。 形成Ge-Sb-Te膜的方法包括：步骤（步骤2），其中气态Ge材料和气态Sb材料或替代地少量气态Te材料不足以形成Ge2Sb2Te5，除了气体 将Ge材料和气态Sb材料引入处理室，使得在基板上形成不含Te或含有Te的量的前体膜，其量小于Ge 2 Sb 2 Te 5中的Te; 和步骤（步骤3），其中将气态Te材料引入处理室，并使前体膜吸附Te，从而调节膜中的Te浓度。
-
公开(公告)号：US08691338B2
公开(公告)日：2014-04-08
申请号：US13063779
申请日：2009-07-17
申请人： Yumiko Kawano , Yusaku Kashiwagi
发明人： Yumiko Kawano , Yusaku Kashiwagi
CPC分类号： H01L21/312 , B05D1/60 , C08G73/1046 , C08G73/105 , C08G73/1067 , C08G73/1071 , C08L79/08 , H01L21/02118 , H01L21/02269 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H01L2924/00
摘要： A first substrate has a source material forming surface on which source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate has a film forming surface on which the polymerized film will be formed. Here, the first substrate and the second substrate are installed in a processing chamber such that the source material forming surface and the film forming surface face each other. Then, the first substrate is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface. Therefore, the polymerized film is formed on the film forming surface by reacting the source materials and evaporated from the first substrate on the film forming surface of the second substrate.
摘要翻译： 第一基板具有源材料形成表面，在其上以预定图案形成用于形成聚合膜的源材料，第二基板具有将形成聚合膜的成膜表面。 这里，第一基板和第二基板安装在处理室中，使得源材料形成表面和成膜表面彼此面对。 然后，将第一基板加热到源材料形成表面上的源材料蒸发的第一温度，并将第二基板加热到第二温度，在该第二温度下，源材料在成膜表面上引起聚合反应。 因此，通过使源材料反应并在第二基板的成膜表面上从第一基板蒸发而在成膜表面上形成聚合膜。
-
公开(公告)号：US08361550B2
公开(公告)日：2013-01-29
申请号：US12529356
申请日：2008-02-27
申请人： Akinobu Kakimoto , Yumiko Kawano
发明人： Akinobu Kakimoto , Yumiko Kawano
IPC分类号： C23C16/40
CPC分类号： C23C16/45553 , C23C16/40 , C23C16/404 , C23C16/405 , H01L21/3141 , H01L21/31691
摘要： A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an oxidizing agent in the form of gas, a Sr material is introduced into the processing chamber in the form of gas, the Sr material is oxidized by introducing the oxidizing agent in the form of gas, and a SrTiO3 film is formed on the substrate. As the Sr material, a Sr amine compound or a Sr imine compound is used.
摘要翻译： 基板被布置在处理室中，基板被加热，Ti材料以气体的形式被引入处理室中，Ti材料通过引入气体形式的氧化剂而被氧化，引入Sr材料 以气体的形式进入处理室，通过以气体的形式引入氧化剂来氧化Sr材料，并且在衬底上形成SrTiO 3膜。 作为Sr材料，使用Sr胺化合物或Sr亚胺化合物。
-
74.发明申请公开(公告)号：US20110171384A1
公开(公告)日：2011-07-14
申请号：US13063779
申请日：2009-07-17
申请人： Yumiko Kawano , Yusaku Kashiwagi
发明人： Yumiko Kawano , Yusaku Kashiwagi
IPC分类号： C23C16/448 , C23C16/458 , C23C16/46 , C23C16/52
CPC分类号： H01L21/312 , B05D1/60 , C08G73/1046 , C08G73/105 , C08G73/1067 , C08G73/1071 , C08L79/08 , H01L21/02118 , H01L21/02269 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H01L2924/00
摘要： A first substrate 16 has a source material forming surface on which a plurality of source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate 15 has a film forming surface on which the polymerized film will be formed. Here, the first substrate 16 and the second substrate 15 are installed in a processing chamber 2 such that the source material forming surface and the film forming surface face each other. Then, the inside of the processing chamber 2 is maintained under a vacuum atmosphere, and the first substrate 16 is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate 15 is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface. Therefore, the polymerized film is formed on the film forming surface by reacting the source materials 17 and 18 evaporated from the first substrate 16 on the film forming surface of the second substrate 15.
摘要翻译： 第一基板16具有源材料形成表面，多个用于形成聚合膜的源材料以预定图案形成，第二基板15具有将形成聚合膜的成膜表面。 这里，第一基板16和第二基板15安装在处理室2中，使得源材料形成表面和成膜表面彼此面对。 然后，将处理室2的内部保持在真空气氛下，将第一基板16加热到源材料形成表面上的源材料蒸发并且将第二基板15加热到第二温度的第一温度 源材料在成膜表面上引起聚合反应的温度。 因此，通过使从第一基板16蒸发的源材料17和18在第二基板15的成膜表面上反应，在成膜表面上形成聚合膜。
-
公开(公告)号：US20110036288A1
公开(公告)日：2011-02-17
申请号：US12918165
申请日：2009-02-18
IPC分类号： C30B1/02
CPC分类号： H01L21/02197 , C23C16/40 , C23C16/409 , C23C16/45527 , C23C16/45531 , C23C16/56 , H01G4/1227 , H01G4/33 , H01L21/02178 , H01L21/02186 , H01L21/02192 , H01L21/022 , H01L21/0228 , H01L21/02323 , H01L21/02356 , H01L21/31691 , H01L28/40
摘要： Disclosed is a method for Sr—Ti—O-base film formation. The method comprises placing a substrate with a Ru film formed thereon in a treatment vessel, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a first Sr—Ti—O-base film having a thickness of not more than 10 nm on the Ru film, annealing the first Sr—Ti—O-base film for crystallization, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a second Sr—Ti—O-base film on the first Sr—Ti—O-base film, and annealing the second Sr—Ti—O-base film for crystallization.
摘要翻译： 公开了一种Sr-Ti-O基成膜方法。 该方法包括将其上形成有Ru膜的基板放置在处理容器中，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成第一Sr-Ti-O基膜，其具有 在Ru膜上的厚度不大于10nm，对第一Sr-Ti-O基膜进行结晶退火，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成 在第一Sr-Ti-O基膜上形成第二Sr-Ti-O基膜，并对第二Sr-Ti-O基膜进行退火以进行结晶化。
-
公开(公告)号：US20090165720A1
公开(公告)日：2009-07-02
申请号：US12397088
申请日：2009-03-03
IPC分类号： C23C16/54
CPC分类号： C23C16/4409 , C23C16/4586 , C23C16/463 , H01L21/67109 , H01L21/67126
摘要： A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member.
摘要翻译： 一种基板处理装置，包括：用于容纳基板的处理室;基板被放置在处理室内的阶段;布置在所述台内并用于加热所述基板的加热构件;布置在所述台与处理之间的密封构件 以及具有冷却介质的冷却机构，其利用蒸发潜热来冷却密封部件。
-
公开(公告)号：US06793969B2
公开(公告)日：2004-09-21
申请号：US10210204
申请日：2002-08-02
申请人： Yukihiro Shimogaki , Yumiko Kawano
发明人： Yukihiro Shimogaki , Yumiko Kawano
IPC分类号： C23C1634
CPC分类号： H01L28/75 , C23C16/34 , C23C16/45523 , H01L21/28556
摘要： A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.
摘要翻译： 形成含有Ti，Si和N的导电膜的CVD工艺包括：第一步，同时供给Ti，Si和N的气体源，以生长导电膜;第二步骤，将Ti，Si和N的气态源 使Ti的气体源的流量降低的状态，进一步使导电膜生长，其中第一步骤和第二步骤交替进行。
-
公开(公告)号：US06063703A
公开(公告)日：2000-05-16
申请号：US81047
申请日：1998-05-19
申请人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
发明人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
IPC分类号： H01L21/285 , H01L21/3213 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/32136 , H01L21/76843 , H01L21/76856 , H01L21/76865 , H01L21/76877 , H01L23/53223 , H01L2924/0002
摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.
摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，在绝缘膜上形成诸如TiN的下面的金属膜和连接孔的底壁和侧壁，通过CVD 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。
-
公开(公告)号：US5973402A
公开(公告)日：1999-10-26
申请号：US791161
申请日：1997-01-30
申请人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
发明人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
IPC分类号： H01L21/285 , H01L21/3213 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/32136 , H01L21/76843 , H01L21/76856 , H01L21/76865 , H01L21/76877 , H01L23/53223 , H01L2924/0002
摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.
摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。
-
-
-
-
-
-
-
-
搜索结果
79 条记录 (耗时 0.038 秒)
