公开(公告)号：US07563709B2

公开(公告)日：2009-07-21

申请号：US11907018

申请日：2007-10-09

申请人： Hideo Nakagawa ,  Masaru Sasago ,  Yoshihiko Hirai

发明人： Hideo Nakagawa ,  Masaru Sasago ,  Yoshihiko Hirai

IPC分类号： H01L21/4763

CPC分类号： H01L21/76801 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76817

摘要： A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

摘要翻译： 图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上，将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火，使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

公开(公告)号：US20080290472A1

公开(公告)日：2008-11-27

申请号：US12029562

申请日：2008-02-12

申请人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/58 ,  C08K3/34 ,  C08K3/36 ,  B32B5/18 ,  H01L21/312

CPC分类号： H01L21/31695 ,  C08G77/16 ,  C08G77/70 ,  C08G77/80 ,  C08K3/36 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249953 ,  C08L83/00

摘要： Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4   (1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n   (2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.

摘要翻译： 本发明提供一种多孔膜形成用组合物，其含有氧化硅系微粒和通过水解缩合反应得到的聚硅氧烷化合物，在酸催化剂的存在下，含有至少一种四官能性烷氧基硅烷化合物的水解性硅烷化合物 以下公式（1）：<？in-line-formula description =“In-line formula”end =“lead”？> Si（OR1）4（1）<？in-line-formula description =“In-line 式中，R 1可以相同或不同，各自独立地表示直链或支链C 1-4烷基和/或由下式（2）表示的至少一种烷氧基硅烷化合物： in-line-formula description =“In-line Formulas”end =“lead”？> R2nSi（OR3）4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail” 其中，当有多个R 2并且各自独立地表示直链或支链的C 1-8烷基时，R 2（s）可以相同或不同，R 3（s）可以相同或不同 当存在多个R 3并且各自独立地表示直链或支链C 1-4烷基时，并且n是含有大量过量水的反应混合物中n是1至3的整数。

公开(公告)号：US20080248280A1

公开(公告)日：2008-10-09

申请号：US12060291

申请日：2008-04-01

申请人： Yoshitaka Hamada ,  Masaru Sasago ,  Hideo Nakagawa ,  Yasunori Morinaga

发明人： Yoshitaka Hamada ,  Masaru Sasago ,  Hideo Nakagawa ,  Yasunori Morinaga

IPC分类号： B32B3/26 ,  C09K17/40 ,  H01L21/3105 ,  B05D3/02

CPC分类号： H01L21/31695 ,  C01B39/04 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/127 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  Y10T428/249953

摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.

摘要翻译： 本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。 制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤 与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。 通过该方法获得的沸石细颗粒的分散液。

公开(公告)号：US20080118737A1

公开(公告)日：2008-05-22

申请号：US11999076

申请日：2007-12-04

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： B32B5/18 ,  B05D5/00 ,  C08J9/22

CPC分类号： H01L23/5222 ,  C08K3/34 ,  C08L83/02 ,  C09D183/04 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/249953 ,  Y10T428/31663 ,  H01L2924/00

摘要： The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4-n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

摘要翻译： 本发明提供一种成膜用组合物，其可以形成介电性，粘合性，膜一致性和机械强度优异的多孔膜，容易变薄; 多孔膜及其形成方法，以及内部含有多孔膜的高性能和高可靠性的半导体器件。 更具体地，用于形成多孔膜的组合物包括含有无定形聚合物的溶液，其通过水解和缩合由通式（R 1）2表示的至少一种硅烷化合物而获得， （OR 2）4-n N，以及通过使用氢氧化季铵形成的沸石溶胶。 形成多孔膜的方法包括用于涂覆用于形成多孔膜的组合物的涂布步骤; 随后的干燥步骤; 和多孔性形成步骤。

公开(公告)号：US07341775B2

公开(公告)日：2008-03-11

申请号：US10706861

申请日：2003-11-12

申请人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  C08K5/19 ,  C09D183/02 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/31649 ,  Y10T428/31663

摘要： Provided are a composition for forming film which can form a porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; a porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a surfactant and a solution comprising polymer obtainable by hydrolyzing and condensing, in the presence of the surfactant, one or more of alkoxysilane represented by Formula (1) and one or more of alkoxysilane represented by Formula (2): (R1)mSi(OR2)4-m  (1) R3Si(R4)n(OR5)3-n  (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.

摘要翻译： 提供一种可形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜的成膜用组合物。 多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。 更具体地，提供了一种用于形成多孔膜的组合物，其包含表面活性剂和包含可通过在表面活性剂存在下水解和缩合获得的聚合物的溶液，所述聚合物可由一种或多种由式（1）表示的烷氧基硅烷和一种或多种烷氧基硅烷 由式（2）表示：<？in-line-formula description =“In-line Formulas”end =“lead”？>（R＆lt; 1＆gt;）＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？> R <3> Si（R 4） 3-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>还提供了形成多孔的方法 薄膜，其包括在基材上涂布所述组合物以形成薄膜的步骤和将薄膜转变成多孔薄膜的步骤。

公开(公告)号：US20080054464A1

公开(公告)日：2008-03-06

申请号：US11630799

申请日：2005-05-20

申请人： Atsushi Ikeda ,  Hideo Nakagawa ,  Nobuo Aoi

发明人： Atsushi Ikeda ,  Hideo Nakagawa ,  Nobuo Aoi

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76831 ,  H01L21/76846 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).

摘要翻译： 一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A 1），阻挡金属膜（A 1）包括金属氧化物膜（7），金属化合物膜（8）和 从绝缘膜（6）存在的一侧到存在金属互连（10）的一侧依次堆叠的金属膜（9）。 金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

公开(公告)号：US07273820B2

公开(公告)日：2007-09-25

申请号：US10399755

申请日：2001-10-09

申请人： Hideo Nakagawa ,  Masaru Sasago ,  Masayuki Endo ,  Yoshihiko Hirai

发明人： Hideo Nakagawa ,  Masaru Sasago ,  Masayuki Endo ,  Yoshihiko Hirai

IPC分类号： H01L21/469

CPC分类号： H01L21/76819 ,  H01L21/31051

摘要： After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

摘要翻译： 在通过向形成有阶梯层的基板的表面供给流动性的材料形成流体膜之后，通过具有平面的按压面的按压部件将流体膜压在基板上，使得流体膜的表面为 平面化 在该状态下加热流体膜，由此固化，形成具有平坦表面的固化膜。

公开(公告)号：US20070178319A1

公开(公告)日：2007-08-02

申请号：US11625754

申请日：2007-01-22

申请人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： B32B9/04 ,  H01L21/31

CPC分类号： C09D183/14 ,  C09D4/00 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/31663 ,  C08G77/04

摘要： The present invention is a composition for forming a porous film obtainable by hydrolysis and condensation, in an acidic or alkaline condition, of a mixture of 100 parts by weight of one or more compounds selected of the group consisting of hydrolysable silicon compounds represented by Formulas (1) and (2) as described herein and partially hydrolyzed and condensed products of the hydrolysable silicon compounds represented by Formulas (1) and (2), and 0.1 to 20 parts by weight of one or more cross-linking agents selected from the group consisting of structure-controlled cyclic or multi-branched oligomers represented by Formulas (3) to (8) as described herein.

摘要翻译： 本发明是一种用于形成多孔膜的组合物，其通过在酸性或碱性条件下水解和缩合100重量份的一种或多种选自由式（II）表示的可水解硅化合物的化合物的混合物 1）和（2）和由式（1）和（2）表示的可水解硅化合物的部分水解和缩合产物和0.1至20重量份选自以下的交联剂： 由本文所述的由式（3）至（8）表示的结构受控的环状或多支链低聚物组成。

公开(公告)号：US07244657B2

公开(公告)日：2007-07-17

申请号：US10703854

申请日：2003-11-07

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L21/76 ,  C23C16/00

CPC分类号： H01L21/02126 ,  C01B39/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

公开(公告)号：US20070108593A1

公开(公告)日：2007-05-17

申请号：US11652297

申请日：2007-01-11

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C23C16/00 ,  C07C5/25 ,  H01L23/12

CPC分类号： H01L21/02126 ,  C01B39/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

摘要翻译： 本发明提供一种沸石溶胶，其可以通过通常的半导体工艺中使用的方法来形成多孔膜，该多孔膜可以被薄化到预期的厚度，其具有优异的介电性能，粘附性，膜稠度和机械强度，并且可以 容易变薄; 用于成膜的组合物; 多孔膜及其形成方法; 以及内部含有该多孔膜的高性能，高可靠性的半导体装置。 更具体地说，通过水解和分解由以下通式表示的硅烷化合物制备沸石溶胶：Si（OR 1）4（其中R 1， SUP>表示具有1至4个碳的直链或支链烷基，当存在多于一个R 1时，R 1可以是独立的，并且 在结构导向剂和碱性催化剂的存在下在用于形成多孔膜的常规涂布溶液中相同或不同） 然后在75℃以下的温度下加热硅烷化合物。 使用含有该沸石溶胶的多孔膜形成用组合物。