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371 条记录 (耗时 0.033 秒)

    Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
    72.
    发明授权
    Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal 失效
    通过整体高温SIMOX-Ge相互扩散退火形成绝缘体上硅锗（SGOI）

    公开(公告)号：US06855436B2

    公开(公告)日：2005-02-15

    申请号：US10448947

    申请日：2003-05-30

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    IPC分类号： H01L27/08 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12 ,  B32B9/04

    CPC分类号： H01L21/76243 ,  H01L21/26506 ,  H01L21/76267 ,  Y10T428/12674 ,  Y10T428/12681

    摘要： A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implant rich region in the Si-containing substrate. The implant rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.

    摘要翻译： 提供了使用SIMOX和Ge相互扩散形成基本上松弛的，优质的绝缘体上硅衬底材料的方法。 该方法包括首先将离子注入到含Si衬底中以在含Si衬底中形成富含注入区的区域。 注入富含区域具有足够的离子浓度，使得在随后的高温退火期间，形成耐Ge扩散的阻挡层。 接下来，在含Si衬底的表面上形成Ge含有层，然后在允许形成阻挡层和Ge的相互扩散的温度下进行加热步骤，从而形成基本上松弛的单晶SiGe层 阻挡层顶部。

    Patterned SOI by oxygen implantation and annealing
    73.
    发明授权
    Patterned SOI by oxygen implantation and annealing 失效
    通过氧气注入和退火进行图案化SOI

    公开(公告)号：US06846727B2

    公开(公告)日：2005-01-25

    申请号：US09861590

    申请日：2001-05-21

    申请人： Keith E. Fogel ,  Mark C. Hakey ,  Steven J. Holmes ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    发明人： Keith E. Fogel ,  Mark C. Hakey ,  Steven J. Holmes ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/31 ,  H01L21/425

    CPC分类号： H01L21/76243

    摘要： Methods for forming a patterned SOI region in a Si-containing substrate are provided which has geometries of about 0.25 μm or less. The methods disclose each utilize a patterned dielectric mask that includes at least one opening having a size of about 0.25 μm or less which exposes a portion of a Si-containing substrate. Oxygen ions are implanted through the opening using at least a base ion implantation process which is carried out at an oxygen beam energy of about 120 keV or less and an oxygen dosage of about 4E17 cm−2 or less. These conditions minimize erosion of the vertical edges of the patterned dielectric mask and minimize formation of lateral straggles.

    摘要翻译： 提供了在含Si衬底中形成图案化SOI区域的方法，其具有约0.25μm或更小的几何形状。 所述方法公开了各自使用图案化的电介质掩模，该掩模包括具有约0.25μm或更小的尺寸的至少一个开口，其露出部分含Si衬底。 通过使用至少一个基本离子注入工艺，通过开口注入氧离子，该工艺在约120keV或更低的氧束能量和大约4E17cm -2或更低的氧气用量下进行。 这些条件最大限度地减小图案化电介质掩模的垂直边缘的侵蚀并最小化横向锯齿的形成。

    Germanium-containing release layer for transfer of a silicon layer to a substrate
    78.
    发明授权
    Germanium-containing release layer for transfer of a silicon layer to a substrate 有权
    含锗释放层，用于将硅层转移到基底

    公开(公告)号：US08933456B2

    公开(公告)日：2015-01-13

    申请号：US13616322

    申请日：2012-09-14

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    IPC分类号： H01L29/38 ,  H01L21/02 ,  H01L21/762

    CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

    摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

    摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。