公开(公告)号：US20070151755A1

公开(公告)日：2007-07-05

申请号：US11465241

申请日：2006-08-17

申请人： Yuriy Bilenko ,  Remigijus Gaska ,  Michael Shur ,  Grigory Simin

发明人： Yuriy Bilenko ,  Remigijus Gaska ,  Michael Shur ,  Grigory Simin

IPC分类号： H05K1/16 ,  H05K3/30

CPC分类号： H01L23/62 ,  H01L25/167 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/4913 ,  Y10T29/49169 ,  Y10T29/53174 ,  H01L2924/00

摘要： A solution for protecting an electronic device from an electrical surge using a mounting structure is provided. In particular, the mounting structure comprises a conductive material and is electrically connected to the protected electrical device. The conductive material and/or mounting structure can have one or more properties that prevent the mounting structure from adversely impacting operation of the electronic device during normal operation, but enables the mounting structure to provide an alternative electrical path during the electrical surge.

摘要翻译： 提供了一种使用安装结构保护电子设备免受电涌的解决方案。 特别地，安装结构包括导电材料并且电连接到受保护的电气设备。 导电材料和/或安装结构可以具有防止安装结构在正常操作期间不利地影响电子设备的操作的一个或多个特性，但是使安装结构能够在电涌期间提供替代的电路径。

公开(公告)号：US07192849B2

公开(公告)日：2007-03-20

申请号：US10713326

申请日：2003-11-14

申请人： Qhalid Fareed ,  Remigijus Gaska ,  Michael Shur

发明人： Qhalid Fareed ,  Remigijus Gaska ,  Michael Shur

IPC分类号： H01L21/00

CPC分类号： C23C16/45523 ,  C23C16/303 ,  C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639

摘要： Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each element to assist in generating a high quality nitride-based film.

摘要翻译： 使用多种前体助熔剂生长氮化物基膜。 每个前体通量被脉冲一次或多次，以在期望的时间向氮化物基膜添加所需的元素。 针对每个元件定制脉冲的数量，持续时间，定时和/或形状，以帮助产生高质量的基于氮化物的膜。

公开(公告)号：US07095056B2

公开(公告)日：2006-08-22

申请号：US11001304

申请日：2004-12-01

申请人： Pranci{hacek over (s)}kus Vitta ,  Arturas Zukauskas ,  Remigijus Gaska ,  Michael Shur

发明人： Pranci{hacek over (s)}kus Vitta ,  Arturas Zukauskas ,  Remigijus Gaska ,  Michael Shur

IPC分类号： H01L29/20

CPC分类号： H05B33/0863 ,  F21K9/00 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  H05B33/0869 ,  H01L2924/00

摘要： A white light emitting device and method that generate light by combining light produced by a white light source with light produced by at least one supplemental light emitting diode (LED). The supplemental light can be used to adjust one or more properties of the generated light. Adjustments can be made to the generated light based on feedback.

摘要翻译： 一种白光发射装置和方法，其通过将由白光源产生的光与由至少一个补充发光二极管（LED）产生的光组合而产生光。 补充光可用于调节所产生的光的一个或多个特性。 基于反馈可以对生成的光进行调整。

公开(公告)号：US10134948B2

公开(公告)日：2018-11-20

申请号：US13404703

申请日：2012-02-24

申请人： Michael Shur ,  Remigijus Gaska

发明人： Michael Shur ,  Remigijus Gaska

IPC分类号： H01L33/06 ,  H01L33/00 ,  H01L33/12 ,  H01S5/022 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

摘要： An improved light emitting heterostructure is provided. The heterostructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region.

公开(公告)号：US09647103B2

公开(公告)日：2017-05-09

申请号：US11944682

申请日：2007-11-26

申请人： Alexei Koudymov ,  Michael Shur ,  Remigijus Gaska

发明人： Alexei Koudymov ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L29/7786 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/4232 ,  H01L29/512

摘要： The current invention introduces a modulated field element incorporated into the semiconductor device outside the controlling electrode and active areas. This element changes its conductivity and/or dielectric properties depending on the electrical potentials of the interface or interfaces between the modulated field element and the semiconductor device and/or incident electromagnetic radiation. The element is either connected to only one terminal of the semiconductor device, or not connected to any terminal of a semiconductor device nor to its active area(s). Such an element can be used as modulated field plate, or a part of a field plate, as a passivation layer or its part, as a guard ring or its part, as a smart field or charge control element or its part, as a feedback element or its part, as a sensor element or its part, as an additional electrode or its part, as an electromagnetic signal path or its part, and/or for any other functions optimizing or modernizing device performance.

公开(公告)号：US08981417B2

公开(公告)日：2015-03-17

申请号：US13048233

申请日：2011-03-15

申请人： Yuriy Bilenko ,  Remigijus Gaska ,  Michael Shur

发明人： Yuriy Bilenko ,  Remigijus Gaska ,  Michael Shur

IPC分类号： H01L33/32 ,  H01L33/38 ,  H01S5/042

CPC分类号： H01L33/38 ,  H01S5/0425

摘要： An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

摘要翻译： 提供了一种改进的发光异质结构和/或器件，其包括具有接触形状的接触层，接触形状包括具有至少三阶对称轴或H形的三叶形。 使用这些形状可以为发光器件提供一个或多个改进的操作特性。 接触形状可以例如使用发射具有以下蓝色光谱或深紫外（UV）光谱中的至少一个的波长的光的氮化物基器件上的接触层。

公开(公告)号：US08766448B2

公开(公告)日：2014-07-01

申请号：US12102408

申请日：2008-04-14

申请人： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur

发明人： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur

IPC分类号： H01L23/532

CPC分类号： H01L23/482 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

摘要翻译： 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。

公开(公告)号：US08643430B2

公开(公告)日：2014-02-04

申请号：US13311633

申请日：2011-12-06

申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H03B1/00

CPC分类号： H03H5/12

摘要： A solution for compensating intermodulation distortion of a component is provided. A circuit element includes multiple connected components. At least two of the connected components comprise current-voltage characteristics of opposite signs (e.g., sublinear and superlinear current-voltage characteristics) such that the current-voltage characteristics of the circuit element produces a level of intermodulation distortion for the circuit element lower than a level of intermodulation distortion for each of the connected components.

摘要翻译： 提供了用于补偿组件的互调失真的解决方案。 电路元件包括多个连接的部件。 连接的组件中的至少两个包括具有相反符号的电流 - 电压特性（例如，亚线性和超级线性电流 - 电压特性），使得电路元件的电流 - 电压特性产生电路元件的互调失真水平低于 每个连接组件的互调失真水平。

公开(公告)号：US08587028B2

公开(公告)日：2013-11-19

申请号：US12651470

申请日：2010-01-03

申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L29/66

CPC分类号： H01L29/772 ,  H01H59/0009 ,  H01H2001/0078 ,  H01L23/66 ,  H01L27/0605 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/8605 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19032 ,  H01L2924/19051 ,  H01L2924/3011 ,  H01P1/15 ,  H01L2924/00

摘要： A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.

摘要翻译： 开关包括输入触点和与导电通道的输出触点。 输入和输出触点中的至少一个电容耦合到导电沟道。 控制触点位于输入和输出触点之间的区域之外，可用于在开关状态之间调整开关。 该开关可以实现为电路中的射频开关。

公开(公告)号：US08461631B2

公开(公告)日：2013-06-11

申请号：US11781302

申请日：2007-07-23

申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L21/336

CPC分类号： H01L29/41708 ,  H01L29/402 ,  H01L29/417 ,  H01L29/4175 ,  H01L29/41775 ,  H01L29/42316 ,  H01L29/732 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872

摘要： A composite contact for a semiconductor device is provided. The composite contact includes a DC conducting electrode that is attached to a semiconductor layer in the device, and a capacitive electrode that is partially over the DC conducting electrode and extends beyond the DC conducting electrode. The composite contact provides a combined resistive-capacitive coupling to the semiconductor layer. As a result, a contact impedance is reduced when the corresponding semiconductor device is operated at high frequencies.

摘要翻译： 提供了一种用于半导体器件的复合触点。 复合触点包括附接到器件中的半导体层的直流导电电极和部分地在直流导电电极上并延伸超过直流导电电极的电容电极。 复合触点提供与半导体层的组合的电阻 - 电容耦合。 结果，当对应的半导体器件以高频率操作时，接触阻抗减小。