公开(公告)号：US07860137B2

公开(公告)日：2010-12-28

申请号：US11222433

申请日：2005-09-08

申请人： Ralph H. Johnson ,  R. Scott Penner ,  James Robert Biard

发明人： Ralph H. Johnson ,  R. Scott Penner ,  James Robert Biard

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/3211

摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.

摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。 在衬底上形成掺杂的底镜。 在底部反射镜上形成包括量子阱的有源层。 在有源层上形成周期性掺杂的导电层。 周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。 在导电层和有源区之间使用电流孔。 在重掺杂导电层上形成未掺杂的顶部反射镜。

公开(公告)号：US07856041B2

公开(公告)日：2010-12-21

申请号：US11670759

申请日：2007-02-02

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/305 ,  H01S5/3095

摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.

摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。 在衬底上形成掺杂的底镜。 在底部反射镜上形成包括量子阱的有源层。 在有源层上形成周期性掺杂的导电层。 周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。 在导电层和有源区之间使用电流孔。 在重掺杂导电层上形成未掺杂的顶部反射镜。

公开(公告)号：US07606282B2

公开(公告)日：2009-10-20

申请号：US11963315

申请日：2007-12-21

申请人： Ralph H. Johnson ,  James Guenter

发明人： Ralph H. Johnson ,  James Guenter

IPC分类号： H01S5/00

CPC分类号： H01S5/18369 ,  H01S5/18372 ,  H01S5/18394

摘要： Improved slope efficiency in a VCSEL can be accomplished by selecting particular mirror layer compositions and/or mirror layer configurations that minimize increased reflectivity in the top mirror and/or maximize increased reflectivity of the bottom mirror with increasing temperature. Improved reflectivity of the bottom mirror compared to the top mirror over a desired operating temperature range can be facilitated by (i) selecting mirror pairs for the bottom and/or top mirror that gives the bottom mirror pairs a greater increase in contrast ratio with increasing temperature compared to the top-mirror pairs, and/or (ii) including fewer mirror pairs in the bottom mirror than the number of mirror pairs that would give optimal reflectivity.

摘要翻译： 可以通过选择使顶部反射镜中增加的反射率最小化和/或最大程度地提高底部反射镜随着温度升高的增加的反射率的特定镜面层组合物和/或镜面层构造来实现VCSEL中的改进的斜率效率。 可以通过（i）为底部和/或上部反射镜选择镜对来提高底部反射镜与顶部反射镜在所需工作温度范围内的反射率，从而使底部镜对对比度随着温度升高而增加。 与上镜对相比，和/或（ii）在底镜中包括较少的镜对，比将产生最佳反射率的镜对数多。

公开(公告)号：US20090161714A1

公开(公告)日：2009-06-25

申请号：US11963315

申请日：2007-12-21

申请人： Ralph H. Johnson ,  James Guenter

发明人： Ralph H. Johnson ,  James Guenter

IPC分类号： H01S5/30 ,  H01L21/02

CPC分类号： H01S5/18369 ,  H01S5/18372 ,  H01S5/18394

摘要： Improved slope efficiency in a VCSEL can be accomplished by selecting particular mirror layer compositions and/or mirror layer configurations that minimize increased reflectivity in the top mirror and/or maximize increased reflectivity of the bottom mirror with increasing temperature. Improved reflectivity of the bottom mirror compared to the top mirror over a desired operating temperature range can be facilitated by (i) selecting mirror pairs for the bottom and/or top mirror that gives the bottom mirror pairs a greater increase in contrast ratio with increasing temperature compared to the top-mirror pairs, and/or (ii) including fewer mirror pairs in the bottom mirror than the number of mirror pairs that would give optimal reflectivity.

摘要翻译： 可以通过选择使顶部反射镜中增加的反射率最小化和/或最大程度地提高底部反射镜随着温度升高的增加的反射率的特定镜面层组合物和/或镜面层构造来实现VCSEL中的改进的斜率效率。 可以通过（i）为底部和/或上部反射镜选择镜对来提高底部反射镜与顶部反射镜在所需工作温度范围内的反射率，从而使底部镜对对比度随着温度升高而增加。 与上镜对相比，和/或（ii）在底镜中包括较少的镜对，比将产生最佳反射率的镜对数多。

公开(公告)号：US07286585B2

公开(公告)日：2007-10-23

申请号：US11079148

申请日：2005-03-14

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2301/173 ,  H01S2302/00 ,  H01S2304/00 ,  H01S2304/02

摘要： A laser system having migration enhanced epitaxy grown substantially flat layers proximate to quantum wells of an active region. The flat layers may be grown at low temperature. This growth may result in flatter interfaces in the nitrogen containing quantum wells within the active region as well as lower trap densities in adjacent material. This may achieve a reduced trap density as well as reduced segregation resulting in a spectral luminescence profile revealing a single narrow peak with a high level of photoluminescence.

摘要翻译： 激光系统具有迁移增强的外延生长基本平坦的层，靠近有源区的量子阱。 平层可以在低温下生长。 这种生长可能导致活性区域内的含氮量子阱中的平坦界面以及相邻材料中较低的阱密度。 这可以实现减小的阱密度以及减小的偏析，导致光谱发光图谱显示具有高水平的光致发光的单个窄峰。

公开(公告)号：US07167495B2

公开(公告)日：2007-01-23

申请号：US10956985

申请日：2004-10-01

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/18308 ,  H01S5/3201 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2302/00

摘要： Incorporation of a GaAs “Extended lower barrier” in between quantum wells using nitrogen and confining layers using aluminum. Not to be confused with barrier layers used in quantum wells, the extended lower barrier is formed between the active region a nd the outer/confining layers where N and Al are respectively used. N and Al can be separated in the case where, for example, AlGaAs is being used in the confining layers and any nitrogen containing material is being used in the active region. Aluminum and Nitrogen when allowed to combine can cause deep traps and resultant non-radiative recombination, therefore N and Al pairing should be prevented. The GaAs extended barrier layer can provide a protective measure against such combination.

摘要翻译： 使用铝在氮和限制层之间在量子阱之间并入GaAs“扩展的下阻挡层”。 不要与在量子阱中使用的阻挡层混淆，在有源区和分别使用N和Al的外/限制层之间形成扩展的下势垒。 在例如在限制层中使用AlGaAs并且在活性区域中使用任何含氮材料的情况下，可以分离N和Al。 当合并铝和氮时，可能导致深陷阱和非辐射复合，因此应防止N和Al配对。 GaAs延伸的阻挡层可以提供抵抗这种组合的保护措施。

公开(公告)号：US07023896B2

公开(公告)日：2006-04-04

申请号：US10350840

申请日：2003-01-24

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S3/08

CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/18333 ,  H01S5/18358 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3211 ,  H01S5/3432

摘要： An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

公开(公告)号：US07009224B2

公开(公告)日：2006-03-07

申请号：US10413186

申请日：2003-04-14

申请人： Ralph H. Johnson ,  James K. Guenter ,  James R. Biard

发明人： Ralph H. Johnson ,  James K. Guenter ,  James R. Biard

IPC分类号： H01L31/0336 ,  H01L31/0328

CPC分类号： H01L31/105 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02546 ,  H01L31/184 ,  Y02E10/544 ,  Y10S438/938

摘要： A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice constant is configured at a low temperature. A reverse grading layer grades the lattice constant back to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in at least the grading layer and the reverse grading layer. Thereon a strained layer superlattice is created upon which a high-speed photodiode or other semiconductor device can be formed.

摘要翻译： 一种变质装置，其包括可以形成半导体器件的基板结构。 在变质装置中，在正常生长温度下形成与衬底晶格常数相匹配的缓冲层，并且在低温下配置经过所需晶格常数的薄分级层。 反向分级层将晶格常数回归以匹配所需的晶格常数。 此后，基于所需的晶格常数，在其上形成厚层。 然后可以发生退火以在至少分级层和反向分级层中分离脱位的材料。 在其上形成了可以形成高速光电二极管或其它半导体器件的应变层超晶格。

公开(公告)号：US06965626B2

公开(公告)日：2005-11-15

申请号：US10232382

申请日：2002-09-03

申请人： James A. Tatum ,  James K Guenter ,  Ralph H. Johnson

发明人： James A. Tatum ,  James K Guenter ,  Ralph H. Johnson

IPC分类号： H01S3/08 ,  H01S3/097 ,  H01S5/00 ,  H01S5/024 ,  H01S5/042 ,  H01S5/183

CPC分类号： H01S5/18341 ,  H01S5/005 ,  H01S5/0207 ,  H01S5/18305 ,  H01S5/1833 ,  H01S5/18369 ,  H01S2301/166

摘要： A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) top mirror located above the heat spreading layer. A substrate is below the active region. A lower contact provides electrical current to that substrate. The lower contact includes an opening that enables light emitted from the active region to reflect from a distributed Bragg reflector (DBR) lower mirror. Beneficially, the substrate includes a slot that enables light to pass through an opening in the lower contact. That slot acts as an alignment structure that enables optical alignment of an external feature to the VCSEL.

摘要翻译： 具有金属散热层的VCSEL，该金属热扩散层与包含绝缘结构的半导体缓冲层相邻。 散热层包括使有源区域发射的光能够从位于热扩散层上方的布拉格反射镜（DBR）上反射镜反射的开口。 底物低于活性区。 较低的触点为该基片提供电流。 下部接触件包括使从有源区域发射的光能够从分布式布拉格反射镜（DBR）下反射镜的开口。 有利地，衬底包括使光能够穿过下接触件中的开口的狭槽。 该槽充当对准结构，使外部特征能够与VCSEL进行光学对准。

公开(公告)号：US06813293B2

公开(公告)日：2004-11-02

申请号：US10301380

申请日：2002-11-21

申请人： Ralph H. Johnson ,  Tzu-Yu Wang

发明人： Ralph H. Johnson ,  Tzu-Yu Wang

IPC分类号： H01S500

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S5/3095

摘要： A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may result in reduced capacitance and more D.C. isolation of the junction. The implant may occur after the trench is made. Some implant may pass the trench to a bottom mirror. Additional isolation and current confinement may be provided with lateral oxidation of a layer below the junction. Internal trenches may be made from the top of the VCSEL vertically to an oxidizable layer below the junction. For further isolation, an open trench may be placed around a bonding pad and its bridge to the VCSEL and internal vertical trenches may be placed on the pad and its bridge down to the oxidizable layer.

摘要翻译： 具有隧道结的垂直腔发射激光器（VCSEL）。 该结可以通过植入物分离成上反射镜并经过结和p层。 VCSEL周围的沟槽可能会导致电容降低，并可能导致更多的直流隔离。 植入物可以在制成沟槽之后发生。 一些植入物可以通过沟槽到底部反射镜。 可以提供额外的隔离和电流限制，其中在结点下方的层的侧向氧化。 内部沟槽可以从VCSEL的顶部垂直地连接到结点下面的可氧化层。 为了进一步隔离，可以在接合焊盘周围放置开放沟槽，并且其到VCSEL的桥接器和内部垂直沟槽可以被放置在焊盘上并且其桥接器到达可氧化层。