公开(公告)号：US20220037355A1

公开(公告)日：2022-02-03

申请号：US17497417

申请日：2021-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soodoo Chae ,  Myoungbum Lee ,  HuiChang Moon ,  Hansoo Kim ,  JinGyun Kim ,  Kihyun Kim ,  Siyoung Choi ,  Hoosung Cho

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L27/11575 ,  H01L23/498 ,  H01L23/535 ,  H01L29/40 ,  H01L29/423 ,  H01L23/522 ,  H01L27/11565

Abstract: A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.

公开(公告)号：US10938239B2

公开(公告)日：2021-03-02

申请号：US16371690

申请日：2019-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kihyun Kim ,  Kyungha Koo ,  Wooram Lee ,  Changhyung Lee ,  Jihye Kim ,  Jihong Kim ,  Yunjeong Noh ,  Seho Park ,  Kumjong Sun ,  Ju-Hyang Lee ,  Mincheol Ha ,  Sangmoo Hwangbo

IPC: H02J7/00 ,  H02J50/10 ,  H02J50/80 ,  H02J50/00

Abstract: An electronic device is provided. The electronic device includes a housing, a wireless charging coil disposed inside the housing, a fan disposed inside the housing and in proximity to the coil, a temperature sensor disposed inside the housing and in proximity to the coil, a wireless charging circuit having the coil and configured to transmit power wirelessly to an external device via the coil, and a control circuit electrically connected to the fan, the temperature sensor, and the wireless charging circuit. The control circuit may be configured to receive a signal from the external device, receive data related to a temperature of the coil from the temperature sensor, and control the fan at least partially on the basis of at least one of the signal and the data.

公开(公告)号：US10546872B2

公开(公告)日：2020-01-28

申请号：US15634597

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soodoo Chae ,  Myoungbum Lee ,  HuiChang Moon ,  Hansoo Kim ,  JinGyun Kim ,  Kihyun Kim ,  Siyoung Choi ,  Hoosung Cho

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L27/11575 ,  H01L23/498 ,  H01L23/535 ,  H01L29/40 ,  H01L29/423 ,  H01L23/522 ,  H01L27/11565

Abstract: A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.

公开(公告)号：US10050291B2

公开(公告)日：2018-08-14

申请号：US15153903

申请日：2016-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heungchan Lee ,  Jeongsik Ko ,  Hyukjae Kwon ,  Kihyun Kim ,  Dongmin Im

IPC: H02J7/00 ,  H01M8/22 ,  H01M8/04223 ,  H01M12/08 ,  H01M8/04119 ,  H01M8/04746 ,  H01M10/44 ,  H01M10/46

Abstract: A metal air battery system includes an air intake apparatus configured to draw external air, a metal air battery module configured to receive oxygen from the air intake apparatus to perform a discharging reaction, and comprising at least one inlet through configured for oxygen inflow and at least one outlet configured for oxygen outflow, and a flow path connection unit connecting the air intake apparatus to the metal air battery module. A position of the at least one inlet and a position of the at least one outlet is con figured to alternate between a first opening in the metal air battery module and a second opening in the metal air battery module as the metal air battery module is discharged, and the metal air battery system is configured so that at least a portion of the oxygen in the metal air battery module is removed during a charging reaction.

公开(公告)号：US09735170B2

公开(公告)日：2017-08-15

申请号：US14973182

申请日：2015-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soodoo Chae ,  Myoungbum Lee ,  HuiChang Moon ,  Hansoo Kim ,  JinGyun Kim ,  Kihyun Kim ,  Siyoung Choi ,  Hoosung Cho

IPC: H01L29/788 ,  H01L27/11582 ,  H01L27/11578 ,  H01L23/498 ,  H01L27/11575 ,  H01L23/535 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L27/11582 ,  H01L23/49844 ,  H01L23/5226 ,  H01L23/535 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/11578 ,  H01L29/408 ,  H01L29/4234 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.

公开(公告)号：US20170219538A1

公开(公告)日：2017-08-03

申请号：US15393731

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kihyun Kim ,  Sooyeon Kim ,  JungDae Park ,  Min Soo Suh ,  Hyang Bong Lee ,  Kwangshin Lim

IPC: G01N30/06 ,  G01N30/16 ,  C01C1/28

CPC classification number: G01N30/06 ,  C01C1/28 ,  G01N2030/067 ,  G01N2030/8872

Abstract: Provided is a method for detecting impurities in ammonium hydroxide. The method for detecting impurities in ammonium hydroxide includes preparing a potassium permanganate solution, preparing ammonium hydroxide, and adding the potassium permanganate solution several times to the ammonium hydroxide so as to detect impurities in the ammonium hydroxide. Potassium permanganate contained in the potassium permanganate solution is added for each time in the range of 0.0001 mol to 0.01 mol per 1 g of ammonia contained in the ammonium hydroxide.

公开(公告)号：US09548123B2

公开(公告)日：2017-01-17

申请号：US14820703

申请日：2015-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeong-In Choe ,  Jaehoon Jang ,  Kihyun Kim ,  Sunil Shim ,  Woonkyung Lee

IPC: G11C16/00 ,  G11C7/00 ,  H01L29/00 ,  H01L27/11 ,  G11C16/14 ,  G11C7/14 ,  G11C16/04 ,  G11C16/30 ,  H01L29/792 ,  H01L27/115 ,  G11C16/10 ,  G11C16/16

CPC classification number: G11C16/14 ,  G11C7/14 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16 ,  G11C16/30 ,  H01L27/11582 ,  H01L29/7926

Abstract: A nonvolatile memory device includes a substrate and a plurality of cell strings provided on the substrate, each cell string including a plurality of memory cells stacked in a direction perpendicular to the substrate. The methods may include applying a word line erase voltage to word lines connected to memory cells of the cell strings; floating ground selection lines connected to ground selection transistors of the cell strings and string selection lines connected to string selection transistors of the plurality of cell strings; applying a ground voltage to at least one lower dummy word line connected to at least one lower dummy memory cell between memory cells and a ground selection transistor in each of the plurality of cell strings; applying an erase voltage to the substrate; and floating the at least one lower dummy word line after applying of the erase voltage.

Abstract translation: 非易失性存储器件包括衬底和设置在衬底上的多个单元串，每个单元串包括沿垂直于衬底的方向堆叠的多个存储单元。 所述方法可以包括将字线擦除电压施加到连接到所述单元串的存储单元的字线; 连接到单元串的地选择晶体管的浮动接地选择线和连接到多个单元串的串选择晶体管的串选择线; 将至少一个连接到所述多个单元串中的每一个的存储单元之间的至少一个下部虚设存储单元和所述多个单元串中的接地选择晶体管的下虚拟字线施加接地电压; 向基板施加擦除电压; 并且在施加擦除电压之后浮置所述至少一个下部虚拟字线。

公开(公告)号：US09412450B2

公开(公告)日：2016-08-09

申请号：US14155877

申请日：2014-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gilsung Lee ,  Jaehoon Jang ,  Kihyun Kim ,  Sunil Shim

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/26

CPC classification number: G11C16/0483 ,  G11C16/26

Abstract: Disclosed is a nonvolatile memory having a memory cell array including a plurality of cell strings, each cell string including memory cells stacked in a direction perpendicular to a substrate, a ground selection transistor between the memory cells and the substrate, and a string selection transistor between the memory cells and a bit line. The memory also includes an address decoder connected to the memory cells, the string selection transistors, and the ground selection transistors, and configured to apply a ground voltage to the string selection lines, word lines, and ground selection line. Further, the memory includes a read/write circuit connected to the string selection transistors through bit lines, and at least one first memory cell maintains a threshold voltage higher than a threshold voltage distribution corresponding to an erase state.

Abstract translation: 公开了具有包括多个单元串的存储单元阵列的非易失性存储器，每个单元串包括沿垂直于衬底的方向堆叠的存储单元，存储单元和衬底之间的接地选择晶体管，以及串选择晶体管， 存储单元和位线。 存储器还包括连接到存储单元的地址解码器，串选择晶体管和接地选择晶体管，并且被配置为对串选择线，字线和地选择线施加接地电压。 此外，存储器包括通过位线连接到串选择晶体管的读/写电路，并且至少一个第一存储单元维持高于对应于擦除状态的阈值电压分布的阈值电压。

公开(公告)号：US09337351B2

公开(公告)日：2016-05-10

申请号：US14619921

申请日：2015-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungkeun Son ,  Hansoo Kim ,  Jinho Kim ,  Kihyun Kim

IPC: H01L29/788 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L27/115

CPC classification number: H01L21/28 ,  H01L27/11519 ,  H01L27/11551 ,  H01L27/11553 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/42324 ,  H01L29/42364 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/7827 ,  H01L29/7841 ,  H01L29/788 ,  H01L29/7883 ,  H01L29/7889

Abstract: Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.

公开(公告)号：US20150349365A1

公开(公告)日：2015-12-03

申请号：US14722230

申请日：2015-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjoon Lee ,  Dongmin Im ,  Kihyun Kim ,  Taeyoung Kim ,  Victor ROEV ,  Sangbok Ma ,  Minsik Park ,  Wonsung Choi

IPC: H01M8/10 ,  H01M12/08 ,  H01M12/04

CPC classification number: H01M10/056 ,  H01M8/102 ,  H01M10/0525 ,  H01M10/0569 ,  H01M12/04 ,  H01M12/08 ,  H01M2220/20 ,  H01M2300/0025 ,  H01M2300/0034 ,  H01M2300/0082

Abstract: An electrolyte for a lithium air battery and lithium air battery including the electrolyte are provided. The electrolyte includes a compound represented by Formula 1 and a lithium salt:

Abstract translation: 提供了用于锂空气电池的电解质和包括电解质的锂空气电池。 电解质包括由式1表示的化合物和锂盐：