公开(公告)号：US20180269418A1

公开(公告)日：2018-09-20

申请号：US15983223

申请日：2018-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo ,  Takuya Kawata

IPC: H01L51/50 ,  H01L51/00

CPC classification number: H01L51/5044 ,  H01L27/3209 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5028 ,  H01L51/5056 ,  H01L51/5072 ,  H01L2251/5376 ,  H01L2251/5384 ,  H01L2251/558

Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

公开(公告)号：US10026917B2

公开(公告)日：2018-07-17

申请号：US15162675

申请日：2016-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo ,  Takuya Kawata

IPC: H01L51/00 ,  H01L51/50

Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

公开(公告)号：US09831353B2

公开(公告)日：2017-11-28

申请号：US14974977

申请日：2015-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuya Kawata ,  Masashi Oota ,  Yusuke Nonaka ,  Shunpei Yamazaki

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/04 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/67 ,  H01L21/8258 ,  H01L27/092 ,  H01L27/06

CPC classification number: H01L29/78693 ,  C23C14/08 ,  C23C14/3414 ,  C23C14/352 ,  C23C14/564 ,  C23C14/566 ,  H01J37/32899 ,  H01J37/3408 ,  H01J37/3417 ,  H01J37/3447 ,  H01L21/0243 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/67207 ,  H01L21/8258 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/092 ,  H01L29/04 ,  H01L29/78696

Abstract: The semiconductor device includes a first insulator over a substrate, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor in contact with the second oxide semiconductor, a third oxide semiconductor on the second oxide semiconductor and the first and second conductors, a second insulator over the third oxide semiconductor, and a third conductor over the second insulator. At least one of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a crystallinity peak that corresponds to a (hkl) plane (h=0, k=0, l is a natural number) observed by X-ray diffraction using a Cu K-alpha radiation as a radiation source. The peak appears at a diffraction angle 2 theta greater than or equal to 31.3 degrees and less than 33.5 degrees.

公开(公告)号：US09754980B2

公开(公告)日：2017-09-05

申请号：US15193677

申请日：2016-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Riho Kataishi ,  Hiroshi Ohki ,  Yuichi Sato ,  Daisuke Matsubayashi

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/109

CPC classification number: H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14665 ,  H01L27/14694 ,  H01L27/14696 ,  H01L31/0224 ,  H01L31/022475 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109

Abstract: An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In—Ga—Zn oxide including c-axis-aligned crystals.

公开(公告)号：US09741860B2

公开(公告)日：2017-08-22

申请号：US14682356

申请日：2015-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51

CPC classification number: H01L29/7869 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/13394 ,  G02F1/134309 ,  G02F2202/10 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78696

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

公开(公告)号：US09548468B2

公开(公告)日：2017-01-17

申请号：US14725026

申请日：2015-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Takahiro Ishisone ,  Nobuharu Ohsawa ,  Yusuke Nonaka ,  Toshiki Sasaki

IPC: H01L51/50 ,  H01L27/32 ,  G09G3/32

CPC classification number: H01L51/5016 ,  G09G3/3225 ,  G09G2300/0426 ,  H01L27/32 ,  H01L27/322 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/5004 ,  H01L51/5024 ,  H01L51/504 ,  H01L51/5044 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5237 ,  H01L2251/5376 ,  H01L2251/552

Abstract: Emission efficiency of a light-emitting element is improved. The light-emitting element has a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material and a host material. The second light-emitting layer includes a phosphorescent material, a first organic compound, and a second organic compound. An emission spectrum of the second light-emitting layer has a peak in a yellow wavelength region. The first organic compound and the second organic compound form an exciplex.

Abstract translation: 发光元件的发光效率提高。 发光元件在一对电极之间具有一对电极和EL层。 EL层包括第一发光层和第二发光层。 第一发光层包括荧光材料和主体材料。 第二发光层包括磷光材料，第一有机化合物和第二有机化合物。 第二发光层的发光光谱在黄色波长区域具有峰值。 第一有机化合物和第二有机化合物形成激元复合物。

公开(公告)号：US20160380223A1

公开(公告)日：2016-12-29

申请号：US15258622

申请日：2016-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yusuke Nonaka ,  Satoshi SEO ,  Harue OSAKA ,  Tsunenori SUZUKI ,  Takeyoshi WATABE

IPC: H01L51/50 ,  H01L51/52

CPC classification number: H01L51/5012 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0067 ,  H01L51/0085 ,  H01L51/5004 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5278 ,  H01L2251/552

Abstract: To increase emission efficiency of a fluorescent light-emitting element by efficiently utilizing a triplet exciton generated in a light-emitting layer. The light-emitting layer of the light-emitting element includes at least a host material and a guest material. The triplet exciton generated from the host material in the light-emitting layer is changed to a singlet exciton by triplet-triplet annihilation (TTA). The guest material (fluorescent dopant) is made to emit light by energy transfer from the singlet exciton. Thus, the emission efficiency of the light-emitting element is improved.

Abstract translation: 通过有效地利用在发光层中产生的三线态激子来提高荧光发光元件的发光效率。 发光元件的发光层至少包含主体材料和客体材料。 从发光层中的主体材料产生的三线态激子通过三重态三重态湮灭（TTA）改变为单线态。 客体材料（荧光掺杂剂）通过从单线态激子的能量转移而发光。 因此，发光元件的发光效率提高。

公开(公告)号：US09515279B2

公开(公告)日：2016-12-06

申请号：US14467532

申请日：2014-08-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L27/3211 ,  H01L27/3244 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5024 ,  H01L51/504 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/524 ,  H01L51/5262 ,  H01L51/5284 ,  H01L2251/552

Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

Abstract translation: 提供利用荧光和磷光并且有利于实际应用的多色发光元件。 发光元件具有包含主体材料和荧光物质的第一发光层和含有两种有机化合物的第二发光层和可将三重态激发能转化成发光的物质的层叠结构 。 注意，从第一发光层发射的光在比第二发光层发射的光更短的波长侧具有发光峰。

公开(公告)号：US09343584B2

公开(公告)日：2016-05-17

申请号：US14819772

申请日：2015-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

IPC: H01L27/01 ,  H01L27/12 ,  H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/0392 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

公开(公告)号：US09281407B2

公开(公告)日：2016-03-08

申请号：US14700433

申请日：2015-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L29/78 ,  H01L21/336 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.