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165 条记录 (耗时 0.053 秒)

    Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
    72.
    发明授权
    Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same 有权
    具有作为存储节点的电阻材料层的多位存储器件及其制造和操作方法

    公开(公告)号：US07939816B2

    公开(公告)日：2011-05-10

    申请号：US12662102

    申请日：2010-03-31

    申请人： Jung-hyun Lee

    发明人： Jung-hyun Lee

    IPC分类号： H01L45/00 ,  G11C11/56

    CPC分类号： H01L45/144 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

    摘要： Provided are a multi-bit memory device having resistive material layers as a storage node, and methods of manufacturing and operating the same. The memory device includes a substrate, a transistor formed on the substrate, and a storage node coupled to the transistor, wherein the storage node includes: a lower electrode connected to the substrate; a first phase change layer formed on the lower electrode; a first barrier layer overlying the first phase change layer; a second phase change layer overlying the first barrier layer; and an upper electrode formed on the second phase change layer.

    摘要翻译： 提供了具有作为存储节点的电阻材料层的多位存储器件及其制造和操作方法。 存储器件包括衬底，形成在衬底上的晶体管和耦合到晶体管的存储节点，其中存储节点包括：连接到衬底的下电极; 形成在下电极上的第一相变层; 覆盖所述第一相变层的第一阻挡层; 覆盖第一阻挡层的第二相变层; 和形成在第二相变层上的上电极。

    Non-volatile memory device and method of fabricating the same
    73.
    发明申请
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20100155826A1

    公开(公告)日：2010-06-24

    申请号：US12654470

    申请日：2009-12-22

    申请人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    发明人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    IPC分类号： H01L27/115 ,  H01L21/8246 ,  H01L21/20

    CPC分类号： H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

    摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括衬底和衬底上的多个半导体柱。 多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。 多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。 多个通孔塞可以连接到多个控制栅电极。 多个字线可以在多个通孔插头上。 多个通孔插塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

    Method of growing silicon and method of manufacturing solar cell using the same
    74.
    发明申请
    Method of growing silicon and method of manufacturing solar cell using the same 有权
    生长硅的方法及使用其制造太阳能电池的方法

    公开(公告)号：US20100151617A1

    公开(公告)日：2010-06-17

    申请号：US12461502

    申请日：2009-08-13

    申请人： Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    发明人： Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    IPC分类号： H01L31/18 ,  C01B33/02

    CPC分类号： C01B33/027 ,  C01B33/029 ,  C01B33/03 ,  C01B33/035 ,  H01L31/182 ,  Y02E10/546 ,  Y02P20/544 ,  Y02P70/521

    摘要： In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO2 supercritical fluid with a pressure of about 60 to about 200 atm. The Si source may be TriChloroSilane (TCS) (SiCl3H) or SiH4.

    摘要翻译： 在使用反应器生长硅（Si）的方法中，包括硅Si源和氢的超临界流体在反应器中流动，并且Si源与氢反应。 太阳能电池的基底可以由使用生长硅（Si）的方法制成的Si形成。 超临界流体可以是其中Si不被氧化的流体，并且可以是例如具有约60至约200atm压力的CO 2超临界流体。 Si源可以是三氯硅烷（TCS）（SiCl 3 H）或SiH 4。

    Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer
    77.
    发明申请
    Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer 审中-公开
    使用超临界流体的材料层形成装置，包括其的材料层形成系统和形成材料层的方法

    公开(公告)号：US20100092679A1

    公开(公告)日：2010-04-15

    申请号：US12461532

    申请日：2009-08-14

    申请人： Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    发明人： Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    IPC分类号： B05D3/10 ,  C23C16/00 ,  C23C16/458

    CPC分类号： B01J3/008 ,  C23C18/08 ,  Y02P20/544

    摘要： Provided are a material layer forming apparatus using a supercritical fluid, a material layer forming system including the apparatus, and a method of forming a material layer using the system. The material layer forming system may include a high pressure pump supplying a supercritical fluid to a precursor storage container and the material layer forming apparatus, and maintaining the internal pressure of the precursor storage container, a reactant material storage container at a pressure such that the supercritical fluid is in a supercritical state, and a material layer forming apparatus. The material layer forming system may further include a pressure gauge adjusting the pressure of the material layer forming apparatus. The precursor of the precursor storage container may be supplied to the material layer forming apparatus using the supercritical fluid.

    摘要翻译： 提供了使用超临界流体的材料层形成装置，包括该装置的材料层形成系统以及使用该系统形成材料层的方法。 材料层形成系统可以包括高压泵，其向前体储存容器和材料层形成设备供应超临界流体，并且保持前体储存容器的内部压力，反应物料储存容器处于使得超临界 流体处于超临界状态，以及材料层形成装置。 材料层形成系统还可以包括调节材料层形成装置的压力的压力计。 可以使用超临界流体将前体储存容器的前体供应到材料层形成装置。

    Method of manufacturing stack-type capacitor and semiconductor memory device having the stack-type capacitor
    79.
    发明申请
    Method of manufacturing stack-type capacitor and semiconductor memory device having the stack-type capacitor 有权
    具有堆叠型电容器的堆叠型电容器和半导体存储器件的制造方法

    公开(公告)号：US20090075450A1

    公开(公告)日：2009-03-19

    申请号：US12289966

    申请日：2008-11-07

    申请人： Jung-hyun Lee ,  Hion-suck Balk ,  Soon-ho Kim ,  Jae-young Choi

    发明人： Jung-hyun Lee ,  Hion-suck Balk ,  Soon-ho Kim ,  Jae-young Choi

    IPC分类号： H01L21/20

    CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/91

    摘要： A stack-type capacitor includes a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the lower electrode includes a first metal layer having a cylindrical shape and a second metal layer filled in the first metal layer. In the capacitor, an amount of oxygen included in the lower electrode is decreased to suppress oxidation of a TiN layer. Thus, a stable stack-type capacitor may be formed, which increases greatly the performance of highly integrated DRAMs.

    摘要翻译： 堆叠型电容器包括下电极，形成在下电极上的电介质层和形成在电介质层上的上电极，其中下电极包括具有圆柱形状的第一金属层和填充在第二金属层中的第二金属层 第一金属层。 在电容器中，下部电极中包含的氧的量减少以抑制TiN层的氧化。 因此，可以形成稳定的堆叠型电容器，这大大增加了高度集成的DRAM的性能。

    Recording and/or reproducing apparatus and method with a signal quality determining device and method
    80.
    发明授权
    Recording and/or reproducing apparatus and method with a signal quality determining device and method 有权
    具有信号质量确定装置和方法的记录和/或再现装置和方法

    公开(公告)号：US07477584B2

    公开(公告)日：2009-01-13

    申请号：US10985014

    申请日：2004-11-10

    申请人： Hyun-soo Park ,  Jae-wook Lee ,  Jae-seong Shim ,  Jung-hyun Lee ,  Eing-seob Cho ,  Eun-jin Ryu

    发明人： Hyun-soo Park ,  Jae-wook Lee ,  Jae-seong Shim ,  Jung-hyun Lee ,  Eing-seob Cho ,  Eun-jin Ryu

    IPC分类号： G11B7/00

    CPC分类号： G11B19/04 ,  G11B7/0901 ,  G11B7/0908 ,  G11B7/0941 ,  G11B7/0945 ,  G11B7/0956 ,  G11B20/10009 ,  G11B20/10046 ,  G11B20/10296

    摘要： A recording and/or reproducing apparatus and method with signal quality determining device and a method thereof, with the signal quality determining device including a signal estimator determining a level corresponding to a sample value of the RF signal using binary data obtained from the RF signal and generating a selection signal corresponding to the determined level, a channel identifier classifying the sample value into a plurality of levels according to the selection signal and obtaining an average value of the sample values classified into each level, and a quality calculator outputting a signal quality value representing quality of the RF signal using each sample value output from the channel identifier and the average value of the sample values classified into each level. Accordingly, quality of an RF signal can be determined more exactly, and focus compensation, tilt compensation, detrack compensation, and recording signal optimization can be performed using the determined signal quality.

    摘要翻译： 一种具有信号质量确定装置的记录和/或再现装置和方法及其方法，其中信号质量确定装置包括使用从RF信号获得的二进制数据确定与RF信号的样本值相对应的电平的信号估计器，以及 产生与所确定的电平相对应的选择信号，根据选择信号将采样值分类为多个电平的信道标识符，并获得分类为每个电平的采样值的平均值;以及质量计算器，输出信号质量值 使用从信道标识符输出的每个样本值和分类到每个级别的样本值的平均值来表示RF信号的质量。 因此，可以更准确地确定RF信号的质量，并且可以使用确定的信号质量来执行聚焦补偿，倾斜补偿，去差补偿和记录信号优化。