公开(公告)号：US20070148920A1

公开(公告)日：2007-06-28

申请号：US11643675

申请日：2006-12-22

申请人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

发明人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/20 ,  C23C16/00

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。 因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

公开(公告)号：US07176499B2

公开(公告)日：2007-02-13

申请号：US10719206

申请日：2003-11-21

申请人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

发明人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

IPC分类号： H01L29/22

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

摘要翻译： 当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构） 具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底 使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

公开(公告)号：US20060286695A1

公开(公告)日：2006-12-21

申请号：US11467641

申请日：2006-08-28

申请人： Katsunori Yanashima ,  Kensaku Motoki

发明人： Katsunori Yanashima ,  Kensaku Motoki

IPC分类号： H01L21/00

CPC分类号： C30B29/403 ,  B82Y20/00 ,  C30B25/02 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/2004 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density. The nitride type III-V group compound semiconductor layer does not directly contact the second regions on the principal plane of the nitride type III-V group compound semiconductor substrate.

公开(公告)号：US20060273343A1

公开(公告)日：2006-12-07

申请号：US11501817

申请日：2006-08-10

申请人： Seiji Nakahata ,  Ryu Hirota ,  Kensaku Motoki ,  Takuji Okahisa ,  Kouji Uematsu

发明人： Seiji Nakahata ,  Ryu Hirota ,  Kensaku Motoki ,  Takuji Okahisa ,  Kouji Uematsu

IPC分类号： H01L33/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02642 ,  H01L21/02647

摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0

摘要翻译： 将种子以规则的图案植入到下衬底上。 在（1≤y≤1,0≤x≤1,0<= x <=1,0,0≤y≤1,0< x + y <= 1）混合晶体通过小平面生长法在种植植入的底物上生长。 小面生长使种子凹陷在种子上方。 小面从相邻区域组装到底坑的位错，并在底面下方形成闭合缺陷积聚区域（H）。 闭合缺陷积聚区（H）永久性停滞位错。 释放位错，径向平面缺陷组件和线性缺陷组件被禁止。 周围伴随的低位错单晶区（Z）和超低位错单晶区（Y）是位错密度单晶。

公开(公告)号：US20060213429A1

公开(公告)日：2006-09-28

申请号：US11434744

申请日：2006-05-17

申请人： Kensaku Motoki ,  Ryu Hirota ,  Takuji Okahisa ,  Seiji Nakahata

发明人： Kensaku Motoki ,  Ryu Hirota ,  Takuji Okahisa ,  Seiji Nakahata

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/406 ,  C30B23/002 ,  C30B25/02 ,  C30B29/403

摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

公开(公告)号：US07112826B2

公开(公告)日：2006-09-26

申请号：US10700495

申请日：2003-11-05

申请人： Kensaku Motoki ,  Takuji Okahisa ,  Seiji Nakahata ,  Ryu Hirota ,  Koji Uematsu

发明人： Kensaku Motoki ,  Takuji Okahisa ,  Seiji Nakahata ,  Ryu Hirota ,  Koji Uematsu

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02642 ,  H01L21/02647

摘要： Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.

摘要翻译： 将种子以规则的图案植入到下衬底上。 通过小面生长法在种植植入的底物上生长GaN晶体。 小面生长使种子凹陷在种子上方。 小面从相邻区域组装到底坑的位错，并在底面下方形成闭合缺陷积聚区域（H）。 闭合缺陷积聚区（H）永久性停滞位错。 释放位错，径向平面缺陷组件和线性缺陷组件被禁止。 周围伴随的低位错单晶区（Z）和超低位错单晶区（Y）是位错密度单晶。

公开(公告)号：US20060172513A1

公开(公告)日：2006-08-03

申请号：US11279709

申请日：2006-04-13

申请人： Katsunori Yanashima ,  Kensaku Motoki

发明人： Katsunori Yanashima ,  Kensaku Motoki

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： C30B29/403 ,  B82Y20/00 ,  C30B25/02 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/2004 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density. The nitride type III-V group compound semiconductor layer does not directly contact the second regions on the principal plane of the nitride type III-V group compound semiconductor substrate.

摘要翻译： 公开了一种制造半导体发光器件的方法。 该方法包括在氮化物III-V族化合物半导体衬底的主平面上生长形成发光器件结构的氮化物III-V族化合物半导体层的步骤，其中多个第二区域由晶体 具有第二平均位错密度的第二平均位错密度规则地布置在由具有第一平均位错密度的晶体制成的第一区域中以产生半导体发光器件，第二平均位错密度大于第一平均位错密度。 氮化物III-V族化合物半导体层不直接接触氮化物III-V族化合物半导体衬底的主面上的第二区域。

公开(公告)号：US07012318B2

公开(公告)日：2006-03-14

申请号：US10846526

申请日：2004-05-17

申请人： Kensaku Motoki ,  Masaki Ueno

发明人： Kensaku Motoki ,  Masaki Ueno

IPC分类号： H01L29/207

CPC分类号： C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207

摘要： Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrate via the non-C-plane facets to the gallium nitride crystal.

摘要翻译： 可以通过制备非C面氮化镓晶体，向非C面氮化镓晶种提供包括镓，氮和氧的材料气体，将氧可以掺杂到氮化镓晶体中，生长非C面 在非C面氮化镓晶种上的氮化镓晶体，并且使得氧经由非C面表面渗入生长的氮化镓晶体。 否则，可以通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到氮化镓晶体中，将包括镓，氮和氧的材料气体供应到C面氮化镓晶种 晶体或三旋转对称的外来晶种，在晶种上生长具有非C面的小面的C面氮化镓晶体，保持C面氮化镓晶体上的刻面，并允许氧渗透通过 非C面面到氮化镓晶体。

公开(公告)号：US20050208687A1

公开(公告)日：2005-09-22

申请号：US10907033

申请日：2005-03-17

申请人： Hitoshi Kasai ,  Kensaku Motoki

发明人： Hitoshi Kasai ,  Kensaku Motoki

IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32 ,  H01L21/00

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/406

摘要： Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible.

摘要翻译： 制造具有从（0001）而不是（0001）位移的晶体取向的离轴GaN单晶独立基板的成本更低。 利用离轴（111）GaAs晶片作为起始衬底，将GaN气相沉积到起始衬底上，该衬底生长与起始衬底相同的偏轴角度和相同方向倾斜的GaN晶体。 通过在起始衬底上形成具有多个孔的掩模，通过掩模将GaN单晶层沉积，然后除去该取向的GaN基板，可以利用错误取向的（111）GaAs基板作为起始衬底， 起始底物。 可以制造具有0.1°至25°取向错误的GaN晶体。

公开(公告)号：US20050042787A1

公开(公告)日：2005-02-24

申请号：US10493137

申请日：2002-10-28

申请人： Shigetoshi Ito ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

发明人： Shigetoshi Ito ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

IPC分类号： H01L21/20 ,  H01S5/02 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01S5/2018 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

摘要翻译： 一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。 首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域 。 接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。 此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。