公开(公告)号：US20070164267A1

公开(公告)日：2007-07-19

申请号：US11334504

申请日：2006-01-19

申请人： Isamu Asano ,  Natsuki Sato ,  Wolodymyr Czubatyj ,  Jeffrey Fournier

发明人： Isamu Asano ,  Natsuki Sato ,  Wolodymyr Czubatyj ,  Jeffrey Fournier

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： A non-volatile memory element comprises a bottom electrode 12; a top electrode 15; and a recording layer 13 containing phase change material and a block layer 14 that can block phase change of the recording layer 13, provided between the bottom electrode 12 and the top electrode 15. The block layer 14 is constituted of material having an electrical resistance that is higher than that of material constituting the recording layer 13. The block layer 14 suppresses the radiation of heat towards the top electrode 15 and greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrode 15 itself can be used to constitute a bit line, or a separate bit line can be provided.

摘要翻译： 非易失性存储元件包括底部电极12; 顶部电极15; 以及包含相变材料的记录层13和可以阻挡设置在底部电极12和顶部电极15之间的记录层13的相变的阻挡层14.阻挡层14由具有电阻的材料构成， 比构成记录层13的材料高。阻挡层14抑制向顶部电极15的热辐射，并且在施加写入电流时极大地限制相变区域。 结果是高的加热效率。 顶部电极15本身可以用于构成位线，或者可以提供单独的位线。

公开(公告)号：US20070063181A1

公开(公告)日：2007-03-22

申请号：US11602923

申请日：2006-11-21

申请人： Wolodymyr Czubatyj ,  Tyler Lowrey ,  Isamu Asano

发明人： Wolodymyr Czubatyj ,  Tyler Lowrey ,  Isamu Asano

IPC分类号： H01L47/00

CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148

摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a first area of electrical communication with the phase-change material. A second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, and the second area being laterally spacedly disposed from the first area. Additionally, the radial memory device includes a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer having an opening therethrough, the phase-change material being disposed in the opening, wherein the phase-change material is disposed at least partially above the second electrode. Further, a method of making a memory device is disclosed.

摘要翻译： 径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的第一区域。 与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，并且所述第二区域与所述第一区域横向间隔设置。 此外，径向存储器件包括设置在第一电极和第二电极之间的电介质层，电介质层具有穿过其中的开口，相变材料设置在开口中，其中相变材料至少部分地设置 在第二电极之上。 此外，公开了一种制造存储器件的方法。

公开(公告)号：US20070048945A1

公开(公告)日：2007-03-01

申请号：US11495927

申请日：2006-07-28

申请人： Wolodymyr Czubatyj ,  Tyler Lowrey ,  Sergey Kostylev

发明人： Wolodymyr Czubatyj ,  Tyler Lowrey ,  Sergey Kostylev

IPC分类号： H01L21/336

CPC分类号： G11C11/5678 ,  G11C11/56 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/122 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148

摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area. Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.

摘要翻译： 径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。 所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定 第一个区域。 此外，公开了一种制造存储器件的方法。 这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。 第一开口提供第一电极的大致平面的第一接触。 该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。

公开(公告)号：US20060233019A1

公开(公告)日：2006-10-19

申请号：US11105829

申请日：2005-04-14

申请人： Sergey Kostylev ,  Tyler Lowrey ,  Wolodymyr Czubatyj ,  Ward Parkinson

发明人： Sergey Kostylev ,  Tyler Lowrey ,  Wolodymyr Czubatyj ,  Ward Parkinson

IPC分类号： G11C11/00

CPC分类号： G11C13/004 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0033 ,  G11C2013/0054

摘要： A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a displacement current which may convert a reset device to a set device. By ensuring that the reset cell never reaches a voltage that would result in triggering of the threshold device, read disturbs may be reduced.

摘要翻译： 可以读取相变存储器，以便减少读取干扰的可能性。 例如，当复位装置升高到电压时，可能会发生读取干扰，导致其阈值装置触发。 阈值装置的触发产生位移电流，其可以将复位装置转换成集装置。 通过确保复位单元不会达到会导致阈值器件触发的电压，可能会降低读取干扰。

公开(公告)号：US20060151849A1

公开(公告)日：2006-07-13

申请号：US11032345

申请日：2005-01-10

申请人： Wolodymyr Czubatyj

发明人： Wolodymyr Czubatyj

IPC分类号： H01L29/12 ,  H01L21/00

CPC分类号： H01L45/065 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/144

摘要： A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal states. Because these states are more stable, they are less prone to drift than the amorphous state conventionally utilized in phase change memories.

摘要翻译： 相变存储器可以在两个结晶态之间转变。 在一个实施方案中，相变材料是在面心立方和六边形状态之间转变的硫族化物。 因为这些状态更稳定，所以它们比相变存储器中常规使用的非晶状态更不容易漂移。

公开(公告)号：US6087674A

公开(公告)日：2000-07-11

申请号：US63174

申请日：1998-04-20

申请人： Standford R. Ovshinsky ,  Wolodymyr Czubatyj ,  David A. Strand ,  Patrick J. Klersy ,  Sergey Kostylev ,  Boil Pashmakov

发明人： Standford R. Ovshinsky ,  Wolodymyr Czubatyj ,  David A. Strand ,  Patrick J. Klersy ,  Sergey Kostylev ,  Boil Pashmakov

IPC分类号： H01L27/10 ,  G11C16/02 ,  H01L27/105 ,  H01L45/00 ,  H01L47/00

CPC分类号： G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/144 ,  G11C2213/35 ,  G11C2213/51 ,  G11C2213/52 ,  G11C2213/72

摘要： An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.

摘要翻译： 一种电操作的单个单元存储器元件，包括：一定量单个存储单元的存储器材料的体积，所述存储器材料包括相变材料和电介质材料的不均匀混合物; 以及用于将电信号传送到所述存储器材料的体积的至少一部分的装置。 一种电操作的单电池存储元件，包括：限定单个单元存储元件的存储器材料的量，所述存储器材料包括相变材料和介电材料，其中所述相变材料具有多个可检测的电阻率值 并且可以直接设置为电阻率值之一，而不需要根据材料的电阻率值将电阻值设定为特定的起始或擦除电阻率值; 以及用于将电信号传送到存储材料体积的至少一部分的装置。

公开(公告)号：US4882295A

公开(公告)日：1989-11-21

申请号：US328666

申请日：1989-03-27

申请人： Wolodymyr Czubatyj ,  Michael G. Hack ,  Michael Shur

发明人： Wolodymyr Czubatyj ,  Michael G. Hack ,  Michael Shur

IPC分类号： H01L27/092 ,  H01L29/739 ,  H01L29/772 ,  H01L29/812 ,  H01L33/00 ,  H01L33/18 ,  H01S5/042 ,  H01S5/062 ,  H01S5/30

CPC分类号： H01L33/18 ,  H01L27/0928 ,  H01L29/739 ,  H01L29/7722 ,  H01L29/8122 ,  H01L33/0041 ,  H01S5/0422 ,  H01S5/30 ,  H01S5/06203 ,  Y10S148/105

摘要： Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of each may be substantially intrinsic or lightly doped. One or more control electrodes or gates located adjacent to each current path project a variable electric field over the ambipolar path, which modulates current by controlling the amount of charge carriers of both polarities injected into the semiconductor body. In most of the single gate embodiments, the electrodes extend across a portion, preferably a major portion such as 75% or 90%, or the length of the current path, but not the entire length of the current path. The embodiments having a plurality of gates typically have two insulated gates, one extending from the anode electrode and the other extending from the cathode electrode. The gates in a single device may overlap.Embodiments having electrodes with doped microcrystalline regions for improved carrier injection are disclosed. Methods for making planar double injection field effect transistors having a plurality of deposited noncrystalline semiconductor layers for clean interface formation between semiconductor layers are also disclosed.

摘要翻译： 可以水平或垂直布置的双注入场效应晶体管每个包括在两个载流电极之间延伸并在其间形成电流路径的半导体材料体。 每个半导体本体可以是基本上固有的或轻掺杂的。 位于每个电流路径附近的一个或多个控制电极或门在双极路径上投射可变电场，该双极路径通过控制注入到半导体主体中的两极性的电荷载流子的量来调制电流。 在大多数单栅极实施例中，电极延伸穿过一部分，优选地主要部分，例如75％或90％，或电流路径的长度，但不延伸到当前路径的整个长度。 具有多个栅极的实施例通常具有两个绝缘栅极，一个从阳极电极延伸，另一个从阴极延伸。 单个设备中的门可能重叠。 公开了具有用于改进载流子注入的具有掺杂微晶区域的电极的实施例。 还公开了用于制造具有用于半导体层之间的清洁界面形成的多个沉积的非晶半导体层的平面双注入场效应晶体管的方法。

公开(公告)号：US4782340A

公开(公告)日：1988-11-01

申请号：US899442

申请日：1986-08-22

申请人： Wolodymyr Czubatyj ,  Roger W. Pryor

发明人： Wolodymyr Czubatyj ,  Roger W. Pryor

IPC分类号： G11C11/407 ,  G11C8/08 ,  H01L21/8229 ,  H01L27/10 ,  H01L27/102 ,  H03K5/02 ,  H03K19/0175 ,  G09G3/34

CPC分类号： G11C8/08 ,  H01L27/10 ,  H03K19/017545 ,  H03K5/023 ,  G11C2211/5614

摘要： Fully integrated thin film electronic arrays including thin film line driver circuits and address decoding circuits are disclosed. Each line driver employs a two terminal thin film threshold switching device of the type exhibiting a negative resistance characteristic for very high speed, high current operation. The line drivers are particularly useful when driving address lines or other switched conductors in arrays having large capacitive loads or current requirements. The address decoding circuits are constructed from an array of thin film diodes configured as a plurality of AND logic gates, with the output of each AND gate providing the trigger signal to turn on a line driver circuit associated with a particular address line. Thin film structures used to implement the fully integrated arrays include diodes and threshold switches arranged as high density vertical devices in the form of multilayer mesa structures. An electronic memory array having a plurality of vertically arranged cells, with each cell provided with a thin film isolation diode and a thin film memory element, is also disclosed.

摘要翻译： 公开了包括薄膜线路驱动电路和地址解码电路的完全集成的薄膜电子阵列。 每个线路驱动器采用具有负电阻特性的类型的双端子薄膜阈值开关器件，用于非常高速，高电流操作。 当驱动具有大容性负载或电流要求的阵列中的地址线或其他开关导体时，线路驱动器特别有用。 地址解码电路由配置为多个AND逻辑门的薄膜二极管阵列构成，每个与门的输出提供触发信号以接通与特定地址线相关联的线路驱动电路。 用于实现完全集成阵列的薄膜结构包括二极管和阈值开关，其布置为多层台面结构形式的高密度垂直器件。 还公开了具有多个垂直排列的单元的电子存储器阵列，每个单元设置有薄膜隔离二极管和薄膜存储元件。

公开(公告)号：US4419533A

公开(公告)日：1983-12-06

申请号：US354285

申请日：1982-03-03

申请人： Wolodymyr Czubatyj ,  Rajendra Singh ,  Joachim Doehler ,  David D. Allred ,  Jaime M. Reyes

发明人： Wolodymyr Czubatyj ,  Rajendra Singh ,  Joachim Doehler ,  David D. Allred ,  Jaime M. Reyes

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/202 ,  H01L31/056 ,  H01L31/075 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies.The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light.While the present invention is applicable to photovoltaic devices formed from any type of semiconductor material, as for example, crystalline, polycrystalline, or amorphous semiconductor alloys or any combination thereof, disclosure herein is primarily directed to photovoltaic devices formed from amorphous silicon alloys preferably incorporating fluorine as a density of states reducing element. The disclosure is also directed to, without limitation, photovoltaic devices of the p-i-n configuration, both as single cells and multiple cells arranged in tandem.

摘要翻译： 公开了新的和改进的光伏器件，其提供比以前从现有器件获得的更高的短路电流和效率。 所公开的装置包括入射辐射导向装置，用于将入射光的至少一部分引导通过其有效区域或其区域，其角度足以基本上限制装置中的定向辐射。 这样可以大幅度地利用光生电子 - 空穴对。 此外，由于光以这样的角度被引导通过有源区域或者区域，所以可以使有源区域更薄以增加收集效率。 入射辐射导向器可以是随机表面或体反射器，以提供光的随机散射，或周期性表面或体反射器以提供光的选择性散射。 尽管本发明可应用于由任何类型的半导体材料形成的光电器件，例如晶体，多晶或非晶半导体合金或其任何组合，但是本文的公开内容主要涉及由非晶硅合金形成的光伏器件，优选掺入氟 作为减少元素的状态密度。 本公开还涉及但不限于p-i-n配置的光伏器件，既作为串联排列的单个单元和多个单元。

公开(公告)号：US08796101B2

公开(公告)日：2014-08-05

申请号：US13590085

申请日：2012-08-20

申请人： Wolodymyr Czubatyj ,  Regino Sandoval

发明人： Wolodymyr Czubatyj ,  Regino Sandoval

IPC分类号： H01L21/8239

CPC分类号： H01L45/122 ,  H01L45/06 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

摘要： A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.

摘要翻译： 相变存储器件包括具有穿过其中的孔的第一绝缘体，至少部分地匹配于该孔的第一电极，与第一电极电连通的相变材料以及与该相位电连通的第二电极 交换材料 当电流通过相变材料从第一电极通过第二电极时，第一和第二电极中的至少一个保持与相变材料不反应。