公开(公告)号：US20060174977A1

公开(公告)日：2006-08-10

申请号：US10646855

申请日：2003-08-21

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Nobukazu Ikeda ,  Eiji Ideta ,  Akihiro Morimoto ,  Tetsutaro Ogushi ,  Takehisa Konishi

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Nobukazu Ikeda ,  Eiji Ideta ,  Akihiro Morimoto ,  Tetsutaro Ogushi ,  Takehisa Konishi

IPC分类号： C23C22/24 ,  C23C8/80

CPC分类号： C23C8/02 ,  C23C26/00 ,  Y10T428/24322 ,  Y10T428/24355 ,  Y10T428/31678

摘要： The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 μm

摘要翻译： 本发明的目的是在不含任何金属材料的其它金属的氧化物膜的情况下，形成耐腐蚀性优异的氧化铬膜。 能够廉价且短时间地形成不含有其他金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供安全的腐蚀性难以供给流体的流体供给系统。 本发明包括以下步骤：在涂覆表面的表面粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬之后，在氧化气氛中进行热处理，形成由氧化铬组成的钝化膜

公开(公告)号：US09105450B2

公开(公告)日：2015-08-11

申请号：US13145398

申请日：2009-11-02

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/32238 ,  H05H1/46 ,  H05H2001/4622

摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

摘要翻译： 微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。 同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

公开(公告)号：US20140186162A1

公开(公告)日：2014-07-03

申请号：US14131299

申请日：2012-06-27

申请人： Masamichi Iwaki ,  Tadahiro Ohmi ,  Kenji Ohyama ,  Isao Akutsu ,  Hajime Iizuka

发明人： Masamichi Iwaki ,  Tadahiro Ohmi ,  Kenji Ohyama ,  Isao Akutsu ,  Hajime Iizuka

IPC分类号： F01D5/02

CPC分类号： F01D5/02 ,  F04C18/16 ,  F04C25/02 ,  F04C27/009 ,  F04C29/023 ,  F04C2220/30 ,  F04C2230/91 ,  Y10T29/49236

摘要： In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.

摘要翻译： 在排气泵中，设置有能够确保安全旋转的旋转机构，能够大幅度减少密封气体的使用。 本发明的旋转机构由旋转轴和密封壳构成。 在旋转轴和密封壳体之间，提供预定间隙。 在旋转轴的外表面和密封壳体的内表面中的至少一个上，设置有PFA膜。 对于至少一个旋转轴和密封壳体的表面上的PFA膜，在用PFA涂覆之后，旋转机构构件的壁表面至少限定间隙，然后熔融和重熔过程，PFA膜是 形成在其自由表面上具有高平滑度。

公开(公告)号：US08714188B2

公开(公告)日：2014-05-06

申请号：US13239715

申请日：2011-09-22

申请人： Tadahiro Ohmi ,  Kouji Nishino ,  Masaaki Nagase ,  Ryousuke Dohi ,  Nobukazu Ikeda ,  Ryutaro Nishimura

发明人： Tadahiro Ohmi ,  Kouji Nishino ,  Masaaki Nagase ,  Ryousuke Dohi ,  Nobukazu Ikeda ,  Ryutaro Nishimura

IPC分类号： G05D7/06

CPC分类号： F16K47/02 ,  Y10T137/0324 ,  Y10T137/0396 ,  Y10T137/7761 ,  Y10T137/7762 ,  Y10T137/7842 ,  Y10T137/86389 ,  Y10T137/86397 ,  Y10T137/86461

摘要： The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.

摘要翻译： 无水锤打开装置包括安装在流体通道上的致动器操作型阀，向上述致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置，可拆卸地固定到 在致动器操作型阀的上游侧的管道通道和输入了由振动传感器检测到的振动检测信号Pr的调谐箱，通过该调谐箱控制控制信号Sc以控制前述的操作压力Ps' 将上述的2步执行器工作压力Pa输出到电动气动变换装置，将使振动检测信号Pr接近零的阶梯操作压力Ps'的2级致动器工作压力Pa'从 通过调节控制信号Sc进行电 - 气转换。

公开(公告)号：US08648393B2

公开(公告)日：2014-02-11

申请号：US13372159

申请日：2012-02-13

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

IPC分类号： H01L27/148

CPC分类号： H01L27/1203 ,  H01L21/28202 ,  H01L29/518 ,  H01L29/78654 ,  H01L29/78696

摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.

摘要翻译： 累积模式晶体管的沟道区域中的半导体层的杂质浓度高于2×1017cm-3，以实现大的栅极电压摆动。

公开(公告)号：US08575023B2

公开(公告)日：2013-11-05

申请号：US13126249

申请日：2009-10-23

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsunori Isogai ,  Hiroaki Tanaka

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsunori Isogai ,  Hiroaki Tanaka

IPC分类号： H01L21/52

CPC分类号： H01L21/823814 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/823835 ,  H01L27/092 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4958 ,  H01L29/66772 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.

摘要翻译： 提供了实现低电阻率的接触的半导体器件制造方法。 在与半导体接触的第一金属层被用于防止氧化的第二金属层覆盖的状态下，仅将第一金属层硅化以形成不混合氧的硅化物层。 作为第一金属层的材料，使用与半导体具有预定值的功函数差的金属。 作为第二金属层的材料，使用在退火温度下不与第一金属层反应的金属。

公开(公告)号：US08551830B2

公开(公告)日：2013-10-08

申请号：US12110800

申请日：2008-04-28

申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。

公开(公告)号：US08465719B2

公开(公告)日：2013-06-18

申请号：US12425247

申请日：2009-04-16

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano ,  Fusao Fujita

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano ,  Fusao Fujita

IPC分类号： C01B31/36

CPC分类号： C23C16/325 ,  C23C16/01 ,  C23C16/56 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/024 ,  H05K1/0306 ,  H05K3/0011 ,  H05K2203/1105 ,  H01L2924/00

摘要： A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.

摘要翻译： 在20GHz时，碳化硅衬底具有等于或小于2.0dB / mm的高频损耗有效地安装和操作电子元件。 将碳化硅衬底在2000℃或更高温度下加热至20GHz时降低至2.0dB / mm以下的高频损耗。 此外，通过CVD制造碳化硅衬底，而不将氮气流入加热器，能够将高频损耗降低到2.0dB / mm以下。

公开(公告)号：US20130140700A1

公开(公告)日：2013-06-06

申请号：US13814950

申请日：2011-08-04

申请人： Tadahiro Ohmi

发明人： Tadahiro Ohmi

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/76843 ,  H01L21/76898 ,  H01L25/0657 ,  H01L2224/16

摘要： Provided is a method of manufacturing a TSV structure, which prevents a substrate from warping even if it is made thin. A method of manufacturing a semiconductor device comprises integrating semiconductor elements on a surface of a semiconductor substrate to form at least a part of a circuit, forming holes from the surface of the semiconductor substrate, forming an insulating film and a barrier film on an inner surface of each hole, forming a conductive metal on a surface of the barrier film to fill each hole, processing a back surface of the semiconductor substrate to reduce the thickness thereof to thereby protrude the conductive metal, and providing a SiCN film on the back surface of the semiconductor substrate.

摘要翻译： 提供一种制造TSV结构的方法，即使其变薄，也可防止基板翘曲。 一种制造半导体器件的方法包括：在半导体衬底的表面上集成半导体元件以形成电路的至少一部分，从半导体衬底的表面形成空穴，在内表面上形成绝缘膜和阻挡膜 的每个孔，在阻挡膜的表面上形成导电金属以填充每个孔，处理半导体衬底的背面以减小其厚度，从而突出导电金属，并在导电金属的背面提供SiCN膜 半导体衬底。

公开(公告)号：US20130118568A1

公开(公告)日：2013-05-16

申请号：US13812159

申请日：2011-07-22

申请人： Tadahiro Ohmi ,  Takurou Kumamoto

发明人： Tadahiro Ohmi ,  Takurou Kumamoto

IPC分类号： H01L31/024

CPC分类号： H01L31/024 ,  H01L31/022483 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/052 ,  H01L31/075 ,  H01L31/1868 ,  Y02E10/548 ,  Y02P70/521

摘要： It is an object of this invention to provide a photoelectric conversion member including a heat dissipation mechanism which is more excellent in heat dissipation characteristics than conventional mechanisms. A photoelectric conversion member 1 of this invention includes a first electrode layer 20, a power generation laminate 22, and a second electrode layer 26 formed on the power generation laminate 22 through a nickel layer 24. A passivation layer 28 made of a material containing SiCN is formed on the second electrode layer 26. On the passivation layer 28, a heat dissipation structure 31 is provided.The heat dissipation structure 31 contains 40 to 750 parts by mass of an expanded graphite powder (E) per 100 parts by mass of at least one type of polymer (S).

摘要翻译： 本发明的目的是提供一种光电转换元件，其包括散热特性比传统机构更优异的散热机构。 本发明的光电转换构件1包括通过镍层24形成在发电叠层22上的第一电极层20，发电层压板22和第二电极层26.由含有SiCN的材料制成的钝化层28 形成在第二电极层26上。在钝化层28上设置有散热结构31。 散热结构31每100质量份的至少一种聚合物（S）含有40〜750质量份的膨胀石墨粉末（E）。