公开(公告)号：US07685877B2

公开(公告)日：2010-03-30

申请号：US12215884

申请日：2008-06-30

申请人： Tetsuo Fujii ,  Masahito Imai

发明人： Tetsuo Fujii ,  Masahito Imai

IPC分类号： G01P15/125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

摘要翻译： 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US07671432B2

公开(公告)日：2010-03-02

申请号：US11709271

申请日：2007-02-22

申请人： Tetsuo Fujii

发明人： Tetsuo Fujii

IPC分类号： H01L29/84 ,  H01L25/07 ,  G01P9/04 ,  G01C19/56

CPC分类号： G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0828 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A dynamic quantity sensor includes a sensor chip having a movable portion at one surface side thereof and a silicon layer at another surface side thereof. The movable portion is displaced under application of a dynamic quantity. The silicon layer is separated from the movable portion through an insulator. The dynamic quantity sensor also includes a circuit chip for transmitting/receiving electrical signals to/from the sensor chip. The circuit chip is disposed to confront the one surface of the sensor chip through a gap portion and cover the movable portion. The sensor chip and the circuit chip are bonded to each other around the gap portion so that a bonding portion is formed to substantially surround the gap portion and thereby seal the gap portion.

摘要翻译： 动态量传感器包括在其一个表面侧具有可移动部分的传感器芯片和在其另一表面侧的硅层。 可动部分在施加动态量的情况下移动。 硅层通过绝缘体与可动部分分离。 动态量传感器还包括用于向/从传感器芯片发送/接收电信号的电路芯片。 电路芯片设置成通过间隙部分面对传感器芯片的一个表面并覆盖可动部分。 传感器芯片和电路芯片围绕间隙部分彼此接合，使得接合部分基本上围绕间隙部分，从而密封间隙部分。

公开(公告)号：US20090108288A1

公开(公告)日：2009-04-30

申请号：US12289222

申请日：2008-10-23

申请人： Yoshihiko Ozeki ,  Tetsuo Fujii ,  Kenji Kouno

发明人： Yoshihiko Ozeki ,  Tetsuo Fujii ,  Kenji Kouno

IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L21/762

CPC分类号： H01L29/7395 ,  H01L21/76224 ,  H01L21/84 ,  H01L23/481 ,  H01L25/16 ,  H01L27/0611 ,  H01L27/12 ,  H01L29/0657 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73257 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19104 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a second section having a second thickness, the second section is the thinnest section among all the sections, and the first thickness is greater than the second thickness. A plurality of isolation trenches penetrates the semiconductor substrate for defining a plurality of element-forming regions in the first section and the second section. A plurality of elements is located at respective ones of the plurality of element-forming regions. The elements include a double-sided electrode element that includes a pair of electrodes separately disposed on the first surface and the second surface, and the double-sided electrode element is located in the second section.

摘要翻译： 半导体器件包括具有不同厚度的多个部分的半导体衬底。 这些部分包括具有第一厚度的第一部分和具有第二厚度的第二部分，第二部分是所有部分中最薄的部分，并且第一厚度大于第二厚度。 多个隔离沟槽穿过半导体衬底，用于在第一部分和第二部分中限定多个元件形成区域。 多个元件位于多个元件形成区域中的相应元件。 元件包括双面电极元件，其包括分开设置在第一表面和第二表面上的一对电极，并且双面电极元件位于第二部分中。

公开(公告)号：US20090054784A1

公开(公告)日：2009-02-26

申请号：US12230039

申请日：2008-08-21

申请人： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

发明人： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

IPC分类号： A61B8/14

CPC分类号： G01S7/521

摘要： An ultrasonic sensor for detecting an object includes: a piezoelectric element having a piezoelectric body and first and second electrodes for sandwiching the piezoelectric body; an acoustic matching element having a reception surface, which receives an ultrasonic wave reflected by the object; and a circuit electrically coupled with the piezoelectric element via a wire. The piezoelectric element is embedded in the acoustic matching element so that the acoustic matching element covers at least the first electrode, a part of a sidewall of the piezoelectric element and a part of the wire between the circuit and the piezoelectric element, and the sidewall of the piezoelectric element is adjacent to the first electrode.

摘要翻译： 一种用于检测物体的超声波传感器包括：具有压电体的压电元件和用于夹持压电体的第一和第二电极; 具有接收表面的声匹配元件，其接收由所述物体反射的超声波; 以及经由导线与压电元件电耦合的电路。 压电元件被嵌入在声匹配元件中，使得声匹配元件至少覆盖第一电极，压电元件的侧壁的一部分和电路与压电元件之间的线的一部分，以及侧壁 压电元件与第一电极相邻。

公开(公告)号：US20090015105A1

公开(公告)日：2009-01-15

申请号：US12213894

申请日：2008-06-26

申请人： Makiko Sugiura ,  Yasuyuki Okuda ,  Tetsuo Fujii

发明人： Makiko Sugiura ,  Yasuyuki Okuda ,  Tetsuo Fujii

IPC分类号： H01L41/00

CPC分类号： B06B1/0629 ,  B06B3/00 ,  G01S7/523

摘要： An ultrasonic sensor includes a piezoelectric element and an acoustic matching member that are joined together to form an ultrasonic detector base. The ultrasonic detector base is sectioned by a clearance extending in an ultrasonic propagation direction to form multiple ultrasonic detectors arranged in an array. The clearance does not entirely section the ultrasonic detector base so that the ultrasonic detectors are joined together by a portion of the ultrasonic detector base.

摘要翻译： 超声波传感器包括连接在一起以形成超声波检测器基座的压电元件和声匹配构件。 超声波检测器基座以超声波传播方向延伸的间隙分段，形成排列成阵列的多个超声波探伤器。 该间隙不完全是超声波检测器底座的部分，使得超声波探测器由超声波检测器底座的一部分连接在一起。

公开(公告)号：US20080054325A1

公开(公告)日：2008-03-06

申请号：US11892819

申请日：2007-08-28

申请人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H01L27/06

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.

摘要翻译： 半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。 晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。 该设备具有最小的尺寸和高切换速度。 此外，改善了开关损耗和浪涌电压两者。

公开(公告)号：US20070232107A1

公开(公告)日：2007-10-04

申请号：US11723431

申请日：2007-03-20

申请人： Kazuhiko Sugiura ,  Hirotsugu Funato ,  Tetsuo Fujii ,  Yumi Maruyama

发明人： Kazuhiko Sugiura ,  Hirotsugu Funato ,  Tetsuo Fujii ,  Yumi Maruyama

IPC分类号： H01R33/02

CPC分类号： H05K5/0091 ,  B81C1/00269 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

摘要： In an attachment structure, a protective cap is provided with an adhesion layer on its outer peripheral edge part and its internal surface. The protective cap is bonded and fixed to an adherend member through the adhesion layer. This attachment structure can be suitably used for a semiconductor device. Alternatively, in a semiconductor device, a protective cap can be bonded using an adhesive. In this case, an outer peripheral edge part of the protective cap has a first end positioned on its inner rim surface, and a second end positioned on its outer rim surface. Furthermore, the first end protrudes toward a sensor chip more than the second end, and is adjacent to the sensor chip.

摘要翻译： 在附接结构中，保护盖在其外周边缘部分及其内表面上设置有粘附层。 保护帽通过粘合层粘合固定在被粘物上。 这种连接结构可以适用于半导体器件。 或者，在半导体器件中，可以使用粘合剂粘合保护帽。 在这种情况下，保护盖的外周边缘部分具有位于其内缘表面上的第一端和位于其外缘表面上的第二端。 此外，第一端比传感器芯片更靠近传感器芯片，并且与传感器芯片相邻。

公开(公告)号：US20070111477A1

公开(公告)日：2007-05-17

申请号：US11600099

申请日：2006-11-16

申请人： Yumi Maruyama ,  Tetsuo Fujii

发明人： Yumi Maruyama ,  Tetsuo Fujii

IPC分类号： H01L21/00 ,  H01L23/544

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： A semiconductor wafer is disclosed for which irradiation of a laser beam forms a modified region due to multiphoton absorption to thereby facilitate dicing of the semiconductor wafer. The semiconductor wafer includes a formation member and a scribe groove located on the formation member according to an irradiation position of the laser beam. The scribe groove defines an open end and a bottom end. A width of the scribe groove is greater at the open end than at the bottom end.

摘要翻译： 公开了半导体晶片，其由于多光子吸收而激光束的照射形成改质区域，从而有利于半导体晶片的切割。 半导体晶片包括根据激光束的照射位置位于形成构件上的形成构件和划​​线槽。 划线槽限定开口端和底端。 划线槽的宽度在开口端大于底端宽度。

公开(公告)号：US07091109B2

公开(公告)日：2006-08-15

申请号：US10896042

申请日：2004-07-22

申请人： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21/46 ,  H01L21/50

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

公开(公告)号：US07089799B2

公开(公告)日：2006-08-15

申请号：US10744097

申请日：2003-12-24

申请人： Takashi Nomura ,  Keiji Horiba ,  Tetsuo Fujii

发明人： Takashi Nomura ,  Keiji Horiba ,  Tetsuo Fujii

IPC分类号： G01L7/00

CPC分类号： G01L19/147 ,  G01L19/0636 ,  G01L19/141 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A pressure sensor device having a casing (10) accommodating a sensor element (20) mounted on a mounting member (30). The casing (10) includes an opening (11) in one surface thereof. The sensor element (20) is arranged in the opening (11) for measuring the pressure outside of the casing. The casing (10) is preferably mounted on the circuit board, which is the mounting member (30). The casing (10) is mounted on the circuit board in such a state that the opening side (11) faces the circuit board.

摘要翻译： 一种具有容纳安装在安装构件（30）上的传感器元件（20）的壳体（10）的压力传感器装置。 壳体（10）在其一个表面中包括开口（11）。 传感器元件（20）布置在用于测量壳体外部的压力的开口（11）中。 壳体（10）优选安装在作为安装构件（30）的电路板上。 壳体（10）以开口侧（11）面向电路板的状态安装在电路板上。