METHOD FOR FORMING FILTER NET ON MEMS SENSOR AND MEMS SENSOR

    公开(公告)号:US20180362331A1

    公开(公告)日:2018-12-20

    申请号:US15739913

    申请日:2017-03-03

    申请人: Goertek Inc.

    IPC分类号: B81B7/00 B81C1/00

    摘要: A method for forming a filter net on an MEMS sensor and an MEMS sensor are disclosed. The method comprises the following steps: disposing a dissociable adhesive tape on a base material, and forming a filter net on an adhesive surface of the dissociable adhesive tape; transferring the filter net on a film to form a self-adhesive coiled material; and transferring and adhering the filter net on the self-adhesive coiled material to collecting a hole of the MEMS sensor. The filter net formed by the method have fine and uniform meshes, and a yield is high. In addition, the method is suitable for large-scale and industrialized production.

    Semiconductor package with coated side walls and method of manufacture
    76.
    发明授权
    Semiconductor package with coated side walls and method of manufacture 有权
    具有涂层侧壁的半导体封装及其制造方法

    公开(公告)号:US09437514B2

    公开(公告)日:2016-09-06

    申请号:US14698436

    申请日:2015-04-28

    申请人: Sensirion AG

    发明人: Werner Hunziker

    摘要: A semiconductor package including an integrated device, the package having a front side, a back side and side walls linking the front and back sides, wherein each side wall is coated, to at least 80% of its area, with a coating material different from the material(s) of the back and front sides. A method of manufacturing a semiconductor package by providing an assembly containing an array of the packages, the assembly having thickness d0 and being attached to a dicing tape of thickness dd, fabricating a set of first dicing streets with width w1 and depth d1

    摘要翻译: 一种包括集成装置的半导体封装,所述封装具有前侧,后侧和连接前侧和后侧的侧壁,其中每个侧壁被涂覆至其面积的至少80%,涂层材料不同于 后侧和前侧的材料。 一种制造半导体封装件的方法,该方法通过提供一种包含封装阵列的组件,该组件具有厚度d0并附着到厚度为dd的切割带上,制造出宽度为w1且深度为d1(d0)的一组第一切割街道 + dd),至少部分地用涂料填充第一切割街道,并且在每个第一切割街道的涂层材料中制造宽度w2≤w1和深度d2≥d0但<(d0 + dd )。

    Method of packaging a MEMS transducer device and packaged MEMS transducer device
    77.
    发明授权
    Method of packaging a MEMS transducer device and packaged MEMS transducer device 有权
    包装MEMS换能器装置和封装的MEMS换能器装置的方法

    公开(公告)号:US09321626B2

    公开(公告)日:2016-04-26

    申请号:US14224861

    申请日:2014-03-25

    摘要: A packaged MEMS transducer device comprising: a die, including: a semiconductor body having a front side and a back side, opposite to one another in a first direction, at least one cavity extending through the semiconductor body between the front side and the back side, and at least one membrane extending on the front side at least partially suspended over the cavity; and a package designed to house the die on an inner surface thereof. The transducer device moreover includes a sealing layer extending on the back side of the semiconductor body for sealing the cavity, and includes a paste layer extending between the sealing layer and the inner surface of the package for firmly coupling the die to the package.

    摘要翻译: 一种封装的MEMS换能器装置,包括:模具,包括:半导体本体,其具有在第一方向上彼此相对的前侧和后侧,至少一个在前侧和后侧之间延伸穿过半导体本体的空腔 并且至少一个膜在前侧延伸至少部分地悬挂在空腔上; 以及设计成在其内表面上容纳模具的包装。 换能器装置还包括在半导体本体的后侧延伸的密封层,用于密封空腔,并且包括在密封层和封装的内表面之间延伸的糊层,用于将管芯牢固地连接到封装。

    DEVICE, SYSTEM AND METHOD FOR PROVIDING MEMS STRUCTURES OF A SEMICONDUCTOR PACKAGE
    80.
    发明申请
    DEVICE, SYSTEM AND METHOD FOR PROVIDING MEMS STRUCTURES OF A SEMICONDUCTOR PACKAGE 有权
    用于提供半导体封装的MEMS结构的器件,系统和方法

    公开(公告)号:US20150084139A1

    公开(公告)日:2015-03-26

    申请号:US14129541

    申请日:2013-09-25

    IPC分类号: B81B3/00 B81C1/00

    摘要: Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.

    摘要翻译: 用于提供半导体封装的精确制造结构的技术和机构。 在一个实施例中,半导体封装的积聚载体包括多孔介电材料层。 种子铜和电镀铜设置在多孔电介质材料层上。 进行随后的蚀刻以去除邻近多孔介电材料层的铜,形成将MEMS结构的悬置部分与多孔介电材料层分开的间隙。 在另一个实施例中,半导体封装包括设置在绝缘层的一部分之间或者氮化硅材料层的一部分的铜结构。 氮化硅材料层将绝缘层耦合到另一绝缘层。 每个绝缘层中的一个或两个保护层不受去离子处理的剥离层结构的剥离。