公开(公告)号：US20160343549A1

公开(公告)日：2016-11-24

申请号：US15230017

申请日：2016-08-05

申请人： TRUMPF HUETTINGER SP. Z O.O.

发明人： Andrzej Gieraltowski ,  Adam Grabowski ,  Piotr Lach ,  Marcin Zelechowski

IPC分类号： H01J37/32 ,  G01R19/165

CPC分类号： H01J37/32944 ,  G01R19/165 ,  H01J37/32128 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935

摘要： Systems and methods of monitoring a discharge in a plasma process are disclosed. The methods include supplying the plasma process with a periodic power supply signal, determining a first signal waveform in a first time interval within a first period of the power supply signal, determining a second signal waveform in a second time interval within a second period of the power supply signal, the second time interval being at a position within the second period corresponding to a position of the first time interval within the first period, comparing the second signal waveform with a reference signal waveform to obtain a first comparison result, determining that the first comparison result corresponds to a given first comparison result, and in response, time-shifting one of the second signal waveform and the reference signal waveform, and comparing the time-shifted signal waveform with the non-time-shifted signal waveform to obtain a second comparison result.

摘要翻译： 公开了在等离子体工艺中监测放电的系统和方法。 所述方法包括向等离子体处理提供周期性电源信号，在电源信号的第一周期内以第一时间间隔确定第一信号波形，在第二时间间隔内在第二时间段内确定第二信号波形 电源信号，所述第二时间间隔处于与所述第一时段内的所述第一时间间隔的位置对应的所述第二时段内的位置，将所述第二信号波形与参考信号波形进行比较，以获得第一比较结果， 第一比较结果对应于给定的第一比较结果，并且作为响应，对第二信号波形和参考信号波形中的一个进行时移，并且将时移信号波形与非时移信号波形进行比较，以获得 第二个比较结果。

公开(公告)号：US09459159B2

公开(公告)日：2016-10-04

申请号：US14580460

申请日：2014-12-23

申请人： TOKYO ELECTRON LIMITED

发明人： Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： G01K17/20 ,  H05H1/24 ,  H05H1/00 ,  H01J37/32 ,  G01J5/58

CPC分类号： G01K17/20 ,  G01J2005/583 ,  H01J37/32724 ,  H01J37/32917 ,  H01J37/32935 ,  H05H1/0043 ,  H05H1/24

摘要： In a heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, a heat-flux measuring member is exposed to the plasma and irradiated with a low coherent light. The heat-flux measuring member has a three-layered structure in which a first length and a second length of optical paths of the low-coherent light in the first layer and the third layer are measured using optical interference of reflected lights from the heat-flux measuring member. Current temperatures of the first layer and the third layer are obtained based on the measured first length, the measured second length, and data representing thermal-optical path length relationship. A heat flux flowing through the heat-flux measuring member is calculated based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer.

摘要翻译： 在利用热通量测量在基板处理室中产生的等离子体的离子通量的热通量测量方法中，将热量测量部件暴露于等离子体并用低相干光照射。 热通量测量部件具有三层结构，其中使用来自热交换器的反射光的光学干涉来测量第一层和第三层中的低相干光的第一长度和第二长度的光路， 焊剂测量部件。 基于所测量的第一长度，测量的第二长度和表示热 - 光路长度关系的数据，获得第一层和第三层的当前温度。 基于获得的温度，第二层的厚度和热导率计算流过热通量测量部件的热通量。

公开(公告)号：US09412566B2

公开(公告)日：2016-08-09

申请号：US14381508

申请日：2013-02-27

申请人： Oxford Instruments Nanotechnology Tools Limited

发明人： Mark Edward McNie ,  Michael Joseph Cooke ,  Leslie Michael Lea

IPC分类号： H01J37/32 ,  H01L21/3065 ,  C23C16/52 ,  C23C16/50 ,  G05B19/418 ,  H01L21/306 ,  H01L21/66

CPC分类号： H01J37/32926 ,  C23C16/50 ,  C23C16/52 ,  G05B19/418 ,  G05B2219/34198 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32917 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/248 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/306 ,  H01L21/30655 ,  H01L22/12 ,  H01L22/26

摘要： Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

摘要翻译： 公开了用于在具有处理室，控制器和用于调节室内的工艺参数的一个或多个装置的表面处理工具中从衬底上沉积材料和/或蚀刻材料的方法。 该方法包括：控制器根据一系列控制步骤指示一个或多个设备，每个控制步骤指定一个或多个设备被指示实现的一组定义的过程参数，其中至少一个控制步骤包括 所述控制器指示所述一个或多个设备在所述步骤的持续时间内实现一组定义的恒定过程参数，包括至少通过所述室的腔室压力和气体流速，所述持续时间小于相应的气体停留时间（Tgr ）的步骤处理室。

公开(公告)号：US20150332894A1

公开(公告)日：2015-11-19

申请号：US14808846

申请日：2015-07-24

申请人： Lam Research Corporation

发明人： John C. Valcore, JR. ,  Henry S. Povolny

IPC分类号： H01J37/32 ,  G05B19/418

CPC分类号： H01J37/32137 ,  G05B15/02 ,  G05B19/418 ,  G05B2219/45031 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/3299

摘要： An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a voltage probe coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, split the voltage signals into a plurality of channels, convert the signals into a plurality of direct current (DC) signals, convert the DC signals into digital signals and process the digital signal in a digital domain to generate a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system.

摘要翻译： 提供了一种用于控制等离子体处理系统的装置。 该装置包括用于获得RF电压信号的RF感测机构。 该装置还包括耦合到RF感测机构的电压探针，以便于获取信号，同时减少在等离子体处理系统中驱动等离子体的RF功率的扰动。 该装置还包括配置用于接收信号的信号处理装置，将电压信号分成多个通道，将信号转换成多个直流（DC）信号，将DC信号转换为数字信号并处理数字信号 在数字域中产生一个传递函数输出。 该装置还包括配置成接收传递函数输出作为反馈信号以控制等离子体处理系统的ESC电源子系统。

公开(公告)号：US09159599B2

公开(公告)日：2015-10-13

申请号：US12722614

申请日：2010-03-12

申请人： Oliver Ansell ,  Anthony Barrass ,  Paul Bennett ,  David Tossell

发明人： Oliver Ansell ,  Anthony Barrass ,  Paul Bennett ,  David Tossell

IPC分类号： H01L21/67 ,  H01J37/32

CPC分类号： H01L21/67253 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299

摘要： Apparatus for chemically etching a workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.

摘要翻译： 用于化学蚀刻工件的设备包括用于接收处理气体并且具有用于抽取废气的泵送端口的腔室和位于泵送端口上游的腔室中的工件支撑件。 腔室还包括位于泵送端口的上游并且在工件支撑件的下游的子室，并且子室包括与窗口相邻的窗口和激发源，用于在废气样本中产生等离子体 产生可通过窗口监测的光发射。

公开(公告)号：US20150170977A1

公开(公告)日：2015-06-18

申请号：US14107641

申请日：2013-12-16

申请人： Lam Research Corporation

发明人： Harmeet Singh

IPC分类号： H01L21/66 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  C23C16/52 ,  H01L21/768 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  C23C16/509 ,  H01L21/3065 ,  H01L21/285

CPC分类号： H01J37/32724 ,  H01J37/32522 ,  H01J37/32917 ,  H01J37/32935 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248

摘要： A plasma processing apparatus for processing semiconductor substrates comprises a plasma processing chamber in which a semiconductor substrate is processed. A process gas source is in fluid communication with the plasma processing chamber and is adapted to supply a process gas into the plasma processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the plasma processing chamber. Process gas and byproducts of the plasma processing are exhausted from the plasma processing chamber through a vacuum port. At least one component of the plasma processing apparatus comprises a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber.

摘要翻译： 用于处理半导体衬底的等离子体处理装置包括处理半导体衬底的等离子体处理室。 处理气体源与等离子体处理室流体连通，并且适于将处理气体供应到等离子体处理室中。 RF能量源适于在等离子体处理室中使处理气体激发成等离子体状态。 等离子体处理的工艺气体和副产物通过真空端口从等离子体处理室排出。 等离子体处理装置的至少一个部件包括在部件的等离子体暴露表面下面的横向延伸的光纤，其中期望表面的空间温度测量，以及耦合到光纤的温度监视装置，以便监视 沿着光纤不同位置的温度。

公开(公告)号：US20150020970A1

公开(公告)日：2015-01-22

申请号：US14508859

申请日：2014-10-07

申请人： Hitachi High-Technologies Corporation

发明人： Eiji IKEGAMI ,  Shoji IKUHARA ,  Takeshi SHIMADA ,  Kenichi KUWABARA ,  Takao ARASE ,  Tsuyoshi MATSUMOTO

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

公开(公告)号：US20140197134A1

公开(公告)日：2014-07-17

申请号：US14218428

申请日：2014-03-18

申请人： Micron Technology, Inc.

发明人： Shu Qin ,  Allen McTeer

IPC分类号： H01J37/32 ,  C23C16/52 ,  C23C14/54

CPC分类号： H01J37/32917 ,  C23C14/54 ,  C23C16/52 ,  G01N21/73 ,  H01J37/32935 ,  H01J37/32972

摘要： Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma.

摘要翻译： 本文公开了微型工件的等离子体处理的系统和方法。 在一个实施例中，一种方法包括在微型工件位于腔室中的同时在腔室中产生等离子体，测量等离子体的光发射，以及基于所测量的光发射来确定等离子体的参数。 该参数可以是等离子体的离子密度或其他参数。

公开(公告)号：US20140124138A1

公开(公告)日：2014-05-08

申请号：US13671072

申请日：2012-11-07

申请人： LAM RESEARCH CORPORATION

发明人： Simon Gosselin

IPC分类号： C23F1/08

CPC分类号： H01J37/32917 ,  H01J37/32935

摘要： A plasma processing chamber is provided comprising one or more process gas inlets, one or more exhaust gas outlets, plasma generating hardware configured to generate a process gas plasma in a plasma processing portion of the plasma processing chamber, a wafer processing stage positioned in the plasma processing chamber, and a plasma monitoring probe assembly. The plasma monitoring probe assembly comprises an electrically conductive probe and an insulator sleeve assembly positioned about the electrically conductive probe. The insulator sleeve assembly comprises a plasma-side sleeve portion and a subterranean sleeve portion positioned about distinct portions of a longitudinal probe axis of the electrically conductive probe of the probe assembly. The plasma-side sleeve portion of the insulator sleeve assembly is constructed of material that is more resistant to plasma-based degradation than is the material of the subterranean sleeve portion of the insulator sleeve assembly, while the subterranean sleeve portion of the insulator sleeve assembly is constructed of material that is more electrically resistant than the material of the plasma-side sleeve portion of the insulator sleeve assembly.

摘要翻译： 提供了一种等离子体处理室，其包括一个或多个工艺气体入口，一个或多个废气出口，等离子体产生硬件，其被配置为在等离子体处理室的等离子体处理部分中产生处理气体等离子体;位于等离子体中的晶片处理台 处理室和等离子体监测探针组件。 等离子体监测探针组件包括导电探针和围绕导电探针定位的绝缘体套筒组件。 绝缘体套筒组件包括等离子体侧套筒部分和位于探针组件的导电探针的纵向探针轴的不同部分周围的地下套管部分。 绝缘体套管组件的等离子体套筒部分由比绝缘套管组件的地下套筒部分的材料更耐等离子体劣化的材料构成，而绝缘体套管组件的地下套筒部分是 由比绝缘套管组件的等离子体侧套筒部分的材料更耐电性的材料构成。

公开(公告)号：US20130048082A1

公开(公告)日：2013-02-28

申请号：US13215159

申请日：2011-08-22

申请人： Mirzafer Abatchev ,  Bradley Howard ,  Armen Kirakosian

发明人： Mirzafer Abatchev ,  Bradley Howard ,  Armen Kirakosian

IPC分类号： F17D3/00

CPC分类号： G05B19/418 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J37/32917 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  Y02P90/02 ,  Y10T137/0318 ,  Y10T137/8158

摘要： A rapid alternating process system and method of operating a rapid alternating process system includes a rapid alternating process chamber, a plurality of process gas sources coupled to the rapid alternating process chamber, wherein each one of the plurality of process gas sources includes a corresponding process gas source flow controller, a bias signal source coupled to the rapid alternating process chamber, a process gas detector coupled to the rapid alternating process chamber, a rapid alternating process chamber controller coupled to the rapid alternating process chamber, the bias signal source, the process gas detector and the plurality of process gas sources, the rapid alternating process chamber controller including logic for initiating a first rapid alternating process phase including: logic for inputting a first process gas into a rapid alternating process chamber, logic for detecting the first process gas in the rapid alternating process chamber, and logic for applying a corresponding first phase bias signal to the rapid alternating process chamber after the first process gas is detected in the rapid alternating process chamber.

摘要翻译： 快速交替过程系统和操作快速交替过程系统的方法包括快速交替处理室，耦合到快速交替处理室的多个处理气体源，其中多个处理气体源中的每一个包括相应的处理气体 源流控制器，耦合到快速交替处理室的偏置信号源，耦合到快速交替处理室的处理气体检测器，耦合到快速交替处理室的快速交替处理室控制器，偏置信号源，处理气体 检测器和多个处理气体源，所述快速交替处理室控制器包括用于启动第一快速交替处理阶段的逻辑，所述逻辑包括：用于将第一处理气体输入快速交替处理室的逻辑，用于检测所述第一处理气体的逻辑 快速交替处理室，以及应用cor的逻辑 在快速交替处理室中检测到第一处理气体之后，向快速交替处理室响应第一相位偏置信号。