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444 条记录 (耗时 0.026 秒)

    Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
    74.
    发明授权
    Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers 失效
    等离子体处理以增强附着力并使含碳层的氧化最小化

    公开(公告)号：US06821571B2

    公开(公告)日：2004-11-23

    申请号：US09336525

    申请日：1999-06-18

    申请人： Judy Huang

    发明人： Judy Huang

    IPC分类号： C23C1402

    CPC分类号： H01L21/02126 ,  C23C16/325 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/3146 ,  H01L21/31633

    摘要： The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He), argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N2O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors. The invention also provides processing regimes that generate the treatment plasma and systems which use the treatment plasma. The carbon-containing material can be used in a variety of layers, such as barrier layers, etch stops, ARCs, passivation layers, and dielectric layers.

    摘要翻译： 本发明通常提供了改进的含碳层的粘附性和抗氧化性，而不需要额外的沉积层。 一方面，本发明使用诸如氦（He），氩（Ar）或其它惰性气体等离子体或惰性气体等离子体的惰性气体等离子体处理含碳材料如碳化硅的暴露表面， 含有等离子体，如一氧化二氮（N2O）等离子体。 其它含碳材料可以包括有机聚合材料，无定形碳，无定形碳氟化合物，含碳氧化物和其它含碳材料。 等离子体处理优选在沉积待处理层之后原位进行。 优选地，其中发生原位沉积和等离子体处理的处理室被配置为递送含碳层的相同或相似的前体。 然而，该层可以用不同的前体沉积。 本发明还提供了产生处理等离子体的处理方案和使用处理等离子体的系统。 含碳材料可以用于各种层，例如阻挡层，蚀刻停止层，ARC，钝化层和电介质层。

    Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile
    77.
    发明授权
    Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile 有权
    用于均匀氮分布的超薄二氧化硅层的氨退火方法

    公开(公告)号：US06632747B2

    公开(公告)日：2003-10-14

    申请号：US09885600

    申请日：2001-06-20

    申请人： Hiroaki Niimi ,  Douglas T. Grider ,  Rajesh Khamankar ,  Sunil Hattangady

    发明人： Hiroaki Niimi ,  Douglas T. Grider ,  Rajesh Khamankar ,  Sunil Hattangady

    IPC分类号： H01L2131

    CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

    摘要： An embodiment of the present invention is a method of forming an ultra-thin dielectric layer by providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% 02); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C.) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2); annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C. for 5 to 60 s); annealing in an oxidizer/hydrogen mixture (preferably N2O with 1% H2) for 5 to 60 s at 800 to 1050° C.

    摘要翻译： 本发明的一个实施例是通过提供具有半导体表面的衬底来形成超薄电介质层的方法; 在半导体表面上形成含氧层; 将含氧层暴露于含氮等离子体以在整个含氧层中产生均匀的氮分布; 并重新氧化和退火该层以稳定氮分布，治愈等离子体诱导的损伤并降低界面缺陷密度。该退火步骤选自一组四种再氧化技术：连续 在H 2和N 2（优选小于20％H 2）的混合物中进行退火，然后将O 2和N 2（优选小于20％的O 2）的混合物进行退火;通过尖峰状温度升高（优选小于20％ （优选为N 2 / O 2或N 2 O / H 2）;通过在减压下的氨中快速热加热（优选在600至1000℃下，对于 5至60秒）;在800至1050℃下在氧化剂/氢气混合物（优选N 2 O与1％H 2）中退火5至60秒。