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    Photoelectric sensor, random accessible active pixel circuit, image sensor and camera
    71.
    发明授权
    Photoelectric sensor, random accessible active pixel circuit, image sensor and camera 有权

    公开(公告)号：US12047695B2

    公开(公告)日：2024-07-23

    申请号：US17914095

    申请日：2020-05-15

    申请人： SUN YAT-SEN UNIVERSITY

    发明人： Kai Wang ,  Yihong Qi

    IPC分类号： H04N25/57 ,  H01L27/146

    CPC分类号： H04N25/57 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643

    摘要： Provided is a photoelectric sensor, a random accessible active pixel circuit, an image sensor and a camera. A photoelectric sensor comprises a doped region, a substrate, a doped source region, a doped drain region, and two isolation regions; wherein the doped region is arranged on a bottom surface of the substrate so as to form a photodiode; a cathode of the photodiode is formed in the doped region and is connected to a positive voltage to make the photodiode work in a reverse bias region; wherein the doped source region and the doped drain region are spaced apart on top of the substrate so as to form a field effect transistor; a source is formed on a top surface of the doped source region, and a drain is formed on the top surface of the doped drain region; wherein the two isolation regions are arranged on opposite sides of the substrate, and extend from the doped source region and the doped drain region to the doped region; wherein a gate dielectric layer and a gate between the doped source region and the doped drain region are configured sequentially upwards from the top surface of the substrate; the gate is connected to a voltage to make the field effect transistor select wide dynamic range mode or high gain mode.

    IMAGE SENSOR AND IMAGE PROCESSING DEVICE COMPRISING IMAGE SENSOR
    72.
    发明公开
    IMAGE SENSOR AND IMAGE PROCESSING DEVICE COMPRISING IMAGE SENSOR 审中-公开

    公开(公告)号：US20240244343A1

    公开(公告)日：2024-07-18

    申请号：US18463919

    申请日：2023-09-08

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hyunjong KIM

    IPC分类号： H04N25/51 ,  H04N23/71 ,  H04N25/57 ,  H04N25/772

    CPC分类号： H04N25/51 ,  H04N23/71 ,  H04N25/57 ,  H04N25/772

    摘要： An image sensor includes a pixel configured to output a pixel signal through a column line, a ramp signal generator configured to generate a reference ramp signal having a level which decreases based on a desired slope, a first gain circuit configured to receive the reference ramp signal, and generate a first ramp signal based on the reference ramp signal, the first ramp signal having a different slope than the reference ramp signal, a second gain circuit configured to receive the reference ramp signal, and generate a second ramp signal based on the reference ramp signal, the second ramp signal having a different slope than the first ramp signal, a first comparator configured to generate a first comparison signal based on the first ramp signal and the pixel signal, and a second comparator configured to generate a second comparison signal based on the second ramp signal and the pixel signal.

    EVENT SENSOR PIXEL WITH SENSITIVITY AND DYNAMIC RANGE OPTIMIZATION
    75.
    发明公开
    EVENT SENSOR PIXEL WITH SENSITIVITY AND DYNAMIC RANGE OPTIMIZATION 审中-公开

    公开(公告)号：US20240205567A1

    公开(公告)日：2024-06-20

    申请号：US18540381

    申请日：2023-12-14

    申请人： Prophesee

    发明人： Thomas FINATEU ,  Daniel Matolin ,  Christoph Posch

    IPC分类号： H04N25/772 ,  H04N25/47 ,  H04N25/57 ,  H04N25/778 ,  H04N25/79

    CPC分类号： H04N25/772 ,  H04N25/47 ,  H04N25/57 ,  H04N25/778 ,  H04N25/79 ,  H01L27/14634

    摘要： A pixel circuit is provided for use in an event sensor. In one implementation, the pixel circuit includes a photosensitive element configured to generate a current signal in response to brightness of light impinging on the photosensitive element, a first N-type transistor, a second N-type transistor, a first P-type transistor including a gate connected to a first bias voltage, a second P-type transistor including a gate connected to a second bias voltage, the second bias voltage being an adjustable DC bias voltage that is adjusted according to at least one of a sensed temperature or a fabrication process variation of the pixel circuit, and a voltage output that varies in response to the brightness of light impinging on the photosensitive element. An adjustment of the second bias voltage causes a DC level of the voltage output to shift up or down without changing the overall gain of the pixel circuit. The pixel circuit may also include one or more additional N-type transistors for increasing performance by optimizing contrast sensitivity. The pixel circuit may further include a converter, a capacitor electrically coupled to the converter, and an amplifier electrically coupled to the capacitor. Further, the pixel circuit may be implemented in a stacked wafer configuration and one or more interconnects between wafers.

    SOLID-STATE IMAGING ELEMENT
    76.
    发明公开
    SOLID-STATE IMAGING ELEMENT 审中-公开

    公开(公告)号：US20240171881A1

    公开(公告)日：2024-05-23

    申请号：US18258687

    申请日：2022-01-20

    申请人： Sony Semiconductor Solutions Corporation

    发明人： Kouji Matsuura

    IPC分类号： H04N25/78 ,  H04N25/40 ,  H04N25/57

    CPC分类号： H04N25/78 ,  H04N25/40 ,  H04N25/57

    摘要： There is provided a solid-state imaging element capable of performing AD conversion on pixel signals in a wide dynamic range in a short time.
    A solid-state imaging device according to the present disclosure includes: a pixel section including photoelectric conversion elements that photoelectrically convert incident light into pixel signals; an AD conversion section that converts the pixel signals from the pixel section into digital signals; a first holding circuit that is provided between the pixel section and the AD conversion section and holds the pixel signals; a second holding circuit that is provided between the pixel section and the AD conversion section and holds the pixel signals; and a selection circuit that is capable of connecting any one of the first and second holding circuits to the AD conversion section and selectively transmits the pixel signals held in the first or second holding circuit to the AD conversion section.

    IMAGE SENSOR
    78.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240088176A1

    公开(公告)日：2024-03-14

    申请号：US18319612

    申请日：2023-05-18

    申请人： Samsung electronics Co., Ltd.

    发明人： Juyeong KIM ,  Changhyun PARK ,  Eunsub SHIM

    IPC分类号： H01L27/146 ,  H04N25/57 ,  H04N25/77 ,  H04N25/78

    CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H04N25/57 ,  H04N25/77 ,  H04N25/78

    摘要： An image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the pixels includes a photodiode, a transfer transistor, first to third floating diffusion nodes, a first capacitor, a second capacitor, a third capacitor, a first switch transistor, a second switch transistor, and a reset transistor. The second switch transistor is configured to turn off in a first period and to turn on in a second period of an exposure period of the photodiode, and the reset transistor is configured to turn on in the first period and to turn off in the second period of the exposure period of the photodiode.