公开(公告)号：US20220006256A1

公开(公告)日：2022-01-06

申请号：US17377835

申请日：2021-07-16

申请人： KYOCERA SLD Laser, Inc.

发明人： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC分类号： H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/0234

摘要： A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US20210384701A1

公开(公告)日：2021-12-09

申请号：US17408998

申请日：2021-08-23

申请人： NUVOTON TECHNOLOGY CORPORATION JAPAN

发明人： Masayuki ONO ,  Katsuya SAMONJI ,  Tohru NISHIKAWA ,  Hiroshi ASAKA ,  Mitsuru NISHITSUJI ,  Kazuya YAMADA

IPC分类号： H01S5/0234 ,  H01S5/22

摘要： A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

公开(公告)号：US11158593B2

公开(公告)日：2021-10-26

申请号：US16829267

申请日：2020-03-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jhih-Bin Chen ,  Chia-Shiung Tsai ,  Ming Chyi Liu ,  Eugene Chen

IPC分类号： H01L23/12 ,  H01L23/48 ,  H01L21/00 ,  H01L21/28 ,  H01L23/00 ,  H01S5/183 ,  H01S5/343 ,  H01S5/0234 ,  H01S5/02355 ,  H01L25/075 ,  H01L33/46 ,  H01L25/065

摘要： Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.

公开(公告)号：US11125415B2

公开(公告)日：2021-09-21

申请号：US16923476

申请日：2020-07-08

申请人： KYOCERA SLD Laser, Inc.

发明人： James W. Raring ,  Paul Rudy ,  Melvin McLaurin ,  Troy Trottier ,  Steven DenBaars

IPC分类号： F21V9/32 ,  H01S5/062 ,  H01S5/343 ,  H01S5/00 ,  H01S5/34 ,  F21V7/30 ,  H01S5/40 ,  G02B27/09 ,  H04B10/116 ,  H04B10/50 ,  H01S5/0225 ,  H01S5/02251 ,  G01S7/481 ,  H01S5/02212 ,  H01S5/02216 ,  F21Y113/13 ,  H01S5/028 ,  H01S5/10 ,  H01L33/00 ,  F21V29/502 ,  G02B26/08 ,  F21Y115/30 ,  G02B26/10 ,  F21V29/70 ,  H01L33/50 ,  H01L33/32 ,  H01S5/22 ,  H01S5/042 ,  H01S5/02 ,  H01S5/024 ,  H01S5/0234 ,  H01S5/02257

摘要： A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

公开(公告)号：US20210273415A1

公开(公告)日：2021-09-02

申请号：US17320856

申请日：2021-05-14

申请人： KYOCERA SLD Laser, Inc.

发明人： Melvin McLaurin ,  James W. Raring

IPC分类号： H01S5/343 ,  H01S5/02 ,  H01S5/323 ,  H01S5/22 ,  H01S5/042 ,  H01S5/0234

摘要： Methods for fabricating ultraviolet laser diode devices include providing substrate members comprising gallium and nitrogen or aluminum and nitrogen, forming an epitaxial material overlying a surface region of the substrate members, patterning the epitaxial material to form epitaxial mesa regions, depositing a bond media on at least one of the epitaxial mesa regions, bonding the bond media on at least one of the epitaxial mesa regions to a handle substrate, subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate, and processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device.

公开(公告)号：US10992100B2

公开(公告)日：2021-04-27

申请号：US16207974

申请日：2018-12-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  An-Jhih Su ,  Chia-Nan Yuan ,  Shih-Guo Shen ,  Der-Chyang Yeh ,  Yu-Hung Lin ,  Ming Shih Yeh

IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/022 ,  H01S5/183 ,  H01S5/30 ,  H01S5/026 ,  H01S5/323 ,  H01S5/0234 ,  H01S5/0237 ,  H01S5/02234

摘要： In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

公开(公告)号：US12088066B2

公开(公告)日：2024-09-10

申请号：US18176872

申请日：2023-03-01

申请人： II-VI Delaware, Inc.

发明人： Jason O'Daniel

IPC分类号： H01S5/42 ,  H01S5/02253 ,  H01S5/0234 ,  H01S5/042 ,  H01S5/183

CPC分类号： H01S5/423 ,  H01S5/02253 ,  H01S5/0234 ,  H01S5/042 ,  H01S5/18305

摘要： In one example, a laser assembly may include a substrate, a lens array, and a laser array. The lens array may be positioned on a first side of the substrate. The laser array may be positioned on a second side of the substrate opposite the first side. Lasers of the laser array may be oriented to generate optical signals through the substrate to corresponding lenses of the lens array. The lens array may include at least one concave lens and at least one convex lens. The concave and convex lenses may map the irradiance of the lasers to a common target irradiance profile, resulting in an alignment tolerant laser assembly.

公开(公告)号：US20240295635A1

公开(公告)日：2024-09-05

申请号：US18661763

申请日：2024-05-13

申请人： Vixar, Inc.

发明人： Matthew M. DUMMER ,  Klein L. JOHNSON ,  Mary HIBBS-BRENNER ,  Dadi SETIADI ,  Benjamin OLSON

IPC分类号： G01S7/481 ,  H01S5/0234 ,  H01S5/026 ,  H01S5/042 ,  H01S5/062 ,  H01S5/183 ,  H01S5/32 ,  H01S5/42

CPC分类号： G01S7/4815 ,  G01S7/4813 ,  H01S5/0234 ,  H01S5/0264 ,  H01S5/04256 ,  H01S5/06203 ,  H01S5/18305 ,  H01S5/32 ,  H01S5/423

摘要： The present invention relates to a Vertical-Cavity Surface-Emitting Laser (VCSEL) die comprising a VCSEL array configured for flip chip bonding to a substrate with the VCSEL array being designed for emission from a substrate side of the chip, integrated beam shaping optics and electrical contacts including a top surface contact and an etched metal connection through a top mirror structure to a bottom n-mirror, or to an n-doped buffer layer under the bottom n-mirror or to the substrate. The invention further relates to an assembly comprising the above VCSEL die and a photodetector in which the VCSEL die is attached to a circuit board or sub-mount with a solder or bump bonds on the VCSEL die and the photodetector is placed on a same circuit board or sub-mount right next to the VCSEL die.

公开(公告)号：US12068577B2

公开(公告)日：2024-08-20

申请号：US17011205

申请日：2020-09-03

申请人： Ricoh Company, Ltd.

发明人： Katsunari Hanaoka

IPC分类号： H01S5/04 ,  G01S7/481 ,  H01S5/0234 ,  H01S5/028 ,  H01S5/042 ,  H01S5/183 ,  H01S5/343 ,  H01S5/42

CPC分类号： H01S5/04257 ,  G01S7/4815 ,  H01S5/0234 ,  H01S5/028 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/18322 ,  H01S5/18344 ,  H01S5/18361 ,  H01S5/3432 ,  H01S5/34353 ,  H01S5/423

摘要： A surface emitting laser includes a substrate, a plurality of surface emitting laser elements on a first surface of the substrate, a first electrode electrically connected to a first conductive semiconductor of the surface emitting laser elements; and a second electrode electrically connected to a second conductive semiconductor of the surface emitting laser elements. Each of the surface emitting laser elements includes a first reflecting mirror on the substrate; an active layer on the first reflecting mirror; and a second reflecting mirror on the active layer. When a first contact region in which the first electrode and the first conductive semiconductor are connected to each other is on the first surface or in the first conductive semiconductor of the surface emitting laser elements. The first electrode is electrically connected to the light emitting units. The second electrode is electrically connected to each of the light emitting units.

公开(公告)号：US20240195151A1

公开(公告)日：2024-06-13

申请号：US18194133

申请日：2023-03-31

申请人： Lumentum Operations LLC

发明人： Wei SHI ,  Joseph LEIGH ,  Suhit Ranjan DAS ,  Huanlin ZHU ,  Raman SRINIVASAN ,  Gianluca BACCHIN ,  Yuefa LI ,  Jacob U. LOPEZ RUVALCABA ,  Lijun ZHU ,  Qianhuan YU

IPC分类号： H01S5/42 ,  H01S5/0234 ,  H01S5/0237

CPC分类号： H01S5/423 ,  H01S5/0234 ,  H01S5/0237

摘要： In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs. The emitter assembly may include a plurality of conductive pillars electrically connected to the VCSEL chip. The emitter assembly may include a dummy pillar, electrically isolated from the VCSEL chip, mating with a slot. The VCSEL chip may include one of the dummy pillar or the slot.