MEMS microphone
    77.
    发明授权

    公开(公告)号:US11838725B2

    公开(公告)日:2023-12-05

    申请号:US17566700

    申请日:2021-12-31

    摘要: The present disclosure discloses a MEMS microphone including a substrate with a back cavity, and an electric capacitance system arranged on the substrate. The electric capacitance system includes a back plate and a diaphragm opposite to the back plate. The back plate includes a body part, a fixing portion connected to the substrate, and a connecting portion connecting the body part and the fixing portion. The diaphragm is fixed to the substrate and located at a side of the back plate close to the substrate. The fixing portion includes a first surface away from the substrate, the first surface includes a first arc surface connected with the body part, the first arc surface protrudes toward a direction away from the substrate. Compared with the related art, MEMS microphone disclosed by the present disclosure has a better reliability.

    MEMS element and electrical circuit

    公开(公告)号:US11837425B2

    公开(公告)日:2023-12-05

    申请号:US17446033

    申请日:2021-08-26

    IPC分类号: H01H59/00 B81B3/00

    摘要: According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, and a first movable electrode facing the first fixed electrode, a first conductive member electrically connected with the first movable electrode, and a second conductive member electrically connected with the first movable electrode. The first movable electrode is supported by the first and second conductive members to be separated from the first fixed electrode in a first state before a first electrical signal is applied between the second conductive member and the first fixed electrode. The first conductive member is separated from the first movable electrode in a second state after the first electrical signal is applied. The first movable electrode is supported by the second conductive member to be separated from the first fixed electrode in the second state.

    Sensor element, angular velocity sensor, and multi-axis angular velocity sensor

    公开(公告)号:US11835338B2

    公开(公告)日:2023-12-05

    申请号:US16479442

    申请日:2018-01-22

    发明人: Munetaka Soejima

    摘要: A sensor element includes a piezoelectric body, a plurality of excitation electrodes, and a plurality of detecting electrodes. The piezoelectric body includes a frame and a driving arm and detecting arm which extend from the frame within a predetermined plane parallel to an xy plane in an orthogonal coordinate system xyz. The excitation electrodes are located on the driving arm. The detecting electrodes are located on the detecting arm enabling detection of a signal generated by bending deformation of the detecting arm in a z-axis direction. The detecting arm includes first and second arms. The first arm extends from the frame in the predetermined plane. The second arm extends from a front end side of the first arm toward a frame side within the predetermined plane. An end part of the second arm on the frame side is formed as a free end.

    MEMS DEVICE
    80.
    发明公开
    MEMS DEVICE 审中-公开

    公开(公告)号:US20230388711A1

    公开(公告)日:2023-11-30

    申请号:US17826184

    申请日:2022-05-27

    摘要: Provided is a MEMS device. The MEMS device includes: substrate having back cavity passing therethrough; diaphragm connected to the substrate and covers the back cavity, the diaphragm comprises first and second membranes, and accommodating space is formed between the first and second membranes; supports arranged in the accommodating space, and opposite ends of the support are connected to the first and second membranes; counter electrode arranged in the accommodating space, the first and second membranes each include conductive and second regions, the second region is formed by semiconductor material without doping conductive ions. Through design of the first and second membranes as the first region and the second region, respectively, the second region is formed by semiconductor material without doping conductive ions, and the first region is formed by doping conductive ions in the semiconductor material, so that the compliance performance is improved and not at risk of delamination.