公开(公告)号：US20180012643A1

公开(公告)日：2018-01-11

申请号：US15633677

申请日：2017-06-26

Applicant: Rambus Inc.

Inventor： Craig E. Hampel ,  Richard E. Perego ,  Stefanos Sidiropoulos ,  Ely K. Tsern ,  Frederick A. Ware

IPC: G11C11/4076 ,  G11C7/22 ,  G06F3/06 ,  G11C21/00 ,  G06F12/02 ,  G11C11/4078 ,  G11C11/4072 ,  G11C11/406 ,  G11C7/10 ,  H04L7/00 ,  G11C11/4093

CPC classification number: G11C11/4076 ,  G06F3/061 ,  G06F3/0629 ,  G06F3/0671 ,  G06F12/0246 ,  G11C7/10 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222 ,  G11C11/40611 ,  G11C11/4072 ,  G11C11/4078 ,  G11C11/4093 ,  G11C21/00 ,  G11C2207/2254 ,  H04L7/0025 ,  H04L7/0079 ,  H04L7/0091

Abstract: A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. Further, at least one of the first and second data patterns is written to the pattern register circuitry in response to a write command received during the calibration.

公开(公告)号：US09843315B2

公开(公告)日：2017-12-12

申请号：US14351955

申请日：2012-10-26

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  Brian Leibowitz ,  Jared Zerbe

IPC: G06F1/04 ,  G06F1/12 ,  G06F3/00 ,  H03K5/13 ,  G11C7/10 ,  G11C7/22 ,  G06F13/16 ,  G11C29/02 ,  G06F13/42 ,  G06F13/00 ,  G11C7/04

CPC classification number: H03K5/13 ,  G06F13/00 ,  G06F13/1689 ,  G06F13/4243 ,  G11C7/04 ,  G11C7/1066 ,  G11C7/1093 ,  G11C7/22 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028

Abstract: An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.

公开(公告)号：US20170337965A1

公开(公告)日：2017-11-23

申请号：US15522182

申请日：2015-11-04

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  James E. Harris

IPC: G11C11/4093 ,  G11C5/06 ,  G11C8/12 ,  G11C5/04

CPC classification number: G11C11/4093 ,  G11C5/04 ,  G11C5/063 ,  G11C7/22 ,  G11C8/12

Abstract: A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. Each memory device supports an access mode and a low-power mode, the latter used to save power for devices that are not immediately needed. The module provides granular power management using a chip-select decoder that decodes chip-select signals from the memory controller into power-state signals that determine which of the memory devices are in which of the modes. Devices can thus be brought out of the low-power mode in relatively small numbers, as needed, to limit power consumption.

公开(公告)号：US09826638B2

公开(公告)日：2017-11-21

申请号：US14515380

申请日：2014-10-15

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan

IPC: G11C5/06 ,  H05K1/11 ,  G11C11/4093 ,  H05K1/18 ,  G06F15/78 ,  G11C11/408 ,  G06F13/16 ,  G06F13/40 ,  G06F1/18 ,  G11C5/04 ,  G11C7/10

CPC classification number: H05K1/11 ,  G06F1/184 ,  G06F13/1694 ,  G06F13/4068 ,  G06F15/7803 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C11/4082 ,  G11C11/4093 ,  H05K1/181 ,  H05K2201/10159 ,  H05K2201/10189

Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.

公开(公告)号：US09823966B1

公开(公告)日：2017-11-21

申请号：US14527422

申请日：2014-10-29

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent S. Haukness ,  Lawrence Lai

IPC: G11C29/00 ,  G06F11/10

CPC classification number: G06F11/1076 ,  G06F11/1048

Abstract: A memory component internally generates and stores the check bits of error detect and correct code (EDC). In a first mode, during a read transaction, the check bits are sent to the memory controller along with the data on the data mask (DM) signal lines. In a second mode, an unmasked write transaction is defined where the check bits are sent to the memory component on the data mask signal lines. In a third mode, a masked write transaction is defined where at least a portion of the check bits are sent from the memory controller on the data signal lines coincident with an asserted data mask signal line. By sending the check bits along with the data, the EDC code can be used to detect and correct errors that occur between the memory component and the memory controller.

公开(公告)号：US20170286017A1

公开(公告)日：2017-10-05

申请号：US15486068

申请日：2017-04-12

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Craig E. Hampel ,  Wayne S. Richardson ,  Chad A. Bellows ,  Lawrence Lai

IPC: G11C7/10 ,  G11C11/4097 ,  G06F3/06 ,  G11C8/06 ,  G11C7/22 ,  G11C11/4076

CPC classification number: G06F3/0659 ,  G06F3/0613 ,  G06F3/0673 ,  G11C7/1006 ,  G11C7/1042 ,  G11C7/22 ,  G11C8/06 ,  G11C11/4076 ,  G11C11/4097

Abstract: A micro-threaded memory device. A plurality of storage banks are provided, each including a plurality of rows of storage cells and having an access restriction in that at least a minimum access time interval must transpire between successive accesses to a given row of the storage cells. Transfer control circuitry is provided to transfer a first amount of data between the plurality of storage banks and an external signal path in response to a first memory access request, the first amount of data being less than a product of the external signal path bandwidth and the minimum access time interval.

公开(公告)号：US09652409B2

公开(公告)日：2017-05-16

申请号：US14871754

申请日：2015-09-30

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Frederick A. Ware

IPC: G06F13/16 ,  G06F12/14 ,  G06F12/02

CPC classification number: G06F12/1458 ,  G06F12/023 ,  G06F13/16 ,  G06F13/1657 ,  G06F13/1684 ,  G06F13/1694 ,  G06F2212/1044 ,  G06F2212/1052

Abstract: A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.

公开(公告)号：US20170133070A1

公开(公告)日：2017-05-11

申请号：US15390681

申请日：2016-12-26

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  Brian S. Leibowitz ,  Wayne Frederick Ellis ,  Akash Bansal ,  John Welsford Brooks ,  Kishore Ven Kasamsetty

IPC: G11C8/18 ,  G06F13/16 ,  G06F13/42 ,  G11C7/10

CPC classification number: G11C8/18 ,  G06F13/161 ,  G06F13/1647 ,  G06F13/1657 ,  G06F13/4234 ,  G11C5/02 ,  G11C5/04 ,  G11C7/10 ,  G11C7/1072 ,  G11C29/023 ,  G11C29/028 ,  G11C2207/2254

Abstract: In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.

公开(公告)号：US20170090533A1

公开(公告)日：2017-03-30

申请号：US15243596

申请日：2016-08-22

Applicant: RAMBUS INC.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Patrick R. Gill

IPC: G06F1/20 ,  H05K7/20

Abstract: The embodiments herein describe technologies of cryogenic digital systems with a power supply located in an ambient temperature domain and logic located in a cryogenic temperature domain. A pair of conductors is operable to carry current with a voltage difference between the power supply and the logic. The pair of conductors includes a first portion thermally coupled to a temperature-regulated or temperature-controlled intermediate temperature domain. The intermediate temperature domain is less than the ambient temperature domain and greater than the cryogenic temperature domain.

公开(公告)号：US20170053691A1

公开(公告)日：2017-02-23

申请号：US15271148

申请日：2016-09-20

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  Richard E. Perego ,  Craig E. Hampel

IPC: G11C11/4076 ,  G11C29/02 ,  G06F13/16 ,  G06F1/12 ,  G06F1/06 ,  G11C11/4096 ,  G06F3/06

CPC classification number: G11C11/4076 ,  G06F1/06 ,  G06F1/105 ,  G06F1/12 ,  G06F3/0604 ,  G06F3/0658 ,  G06F3/0673 ,  G06F13/1684 ,  G06F13/1689 ,  G06F13/1694 ,  G06F13/4086 ,  G11C5/063 ,  G11C7/04 ,  G11C7/1051 ,  G11C7/1072 ,  G11C7/1078 ,  G11C7/22 ,  G11C7/222 ,  G11C8/18 ,  G11C11/409 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50008 ,  G11C29/50012

Abstract: A memory controller component includes transmit circuitry and adjusting circuitry. The transmit circuitry transmits a clock signal and write data to a DRAM, the write data to be sampled by the DRAM using a timing signal. The adjusting circuitry adjusts transmit timing of the write data and of the timing signal such that an edge transition of the timing signal is aligned with an edge transition of the clock signal at the DRAM.

Abstract translation: 存储器控制器组件包括发射电路和调整电路。 发送电路使用定时信号发送时钟信号并将数据写入DRAM，由DRAM采样的写入数据。 调整电路调整写入数据和定时信号的发送定时，使得定时信号的边沿转换与DRAM处的时钟信号的边沿转换对齐。