公开(公告)号：US06444085B1

公开(公告)日：2002-09-03

申请号：US09675319

申请日：2000-09-29

Applicant: Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC: C23C1600

CPC classification number: H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract translation: 本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线 包括相对于工件的平面空间分布在非平面中的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。 平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。 在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

公开(公告)号：US06194325B1

公开(公告)日：2001-02-27

申请号：US08552030

申请日：1995-12-04

Applicant: Chan Lon Yang ,  Jeffrey Marks ,  Nicolas Bright ,  Kenneth S. Collins ,  David Groechel ,  Peter Keswick

Inventor： Chan Lon Yang ,  Jeffrey Marks ,  Nicolas Bright ,  Kenneth S. Collins ,  David Groechel ,  Peter Keswick

IPC: H01L21302

CPC classification number: H01J37/32871 ,  H01J37/321 ,  H01L21/31116

Abstract: A plasma etch process is described for the etching of oxide with a high selectivity to nitride, including nitride formed on uneven surfaces of a substrate, e.g., on sidewalls of steps on an integrated circuit structure. The addition of one or more hydrogen-containing gases, preferably one or more hydrofluorocarbon gases, to one or more fluorine-substituted hydrocarbon etch gases and a scavenger for fluorine, in a plasma etch process for etching oxide in preference to nitride, results in a high selectivity to nitride which is preserved regardless of the topography of the nitride portions of the substrate surface. In a preferred embodiment, one or more oxygen-bearing gases are also added to reduce the overall rate of polymer deposition on the chamber surfaces and on the surfaces to be etched, which can otherwise reduce the etch rate and cause excessive polymer deposition on the chamber surfaces. The fluorine scavenger is preferably an electrically grounded silicon electrode associated with the plasma.

Abstract translation: 描述了用于蚀刻具有对氮化物的高选择性的氧化物的等离子体蚀刻工艺，包括在衬底的不平坦表面上形成的氮化物，例如在集成电路结构上的台阶侧壁上。 在优先于氮化物蚀刻氧化物的等离子体蚀刻工艺中，向一种或多种氟取代烃蚀刻气体和氟清除剂中加入一种或多种含氢气体，优选一种或多种氢氟烃气体，导致 对氮化物的高选择性，与衬底表面的氮化物部分的形貌无关地被保留。 在一个优选的实施方案中，还加入一种或多种含氧气体以降低腔室表面和待蚀刻表面上的聚合物沉积的总体速率，否则可降低蚀刻速率并导致室上过量的聚合物沉积 表面。 氟清除剂优选为与等离子体相关联的电接地硅电极。

公开(公告)号：US06165311A

公开(公告)日：2000-12-26

申请号：US648254

申请日：1996-05-13

Applicant: Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC: H05H1/46 ,  B01D53/22 ,  B01D53/26 ,  C23C16/517 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  C23F1/02

CPC classification number: H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract translation: 本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线 包括相对于工件的平面以非平面方式空间分布的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。 平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。 在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

公开(公告)号：US6108189A

公开(公告)日：2000-08-22

申请号：US965690

申请日：1997-11-06

Applicant: Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

Inventor： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC: B23Q3/15 ,  C23C16/458 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01J37/321 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/2001 ,  Y10T279/23

Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.

Abstract translation: 用于将衬底55保持在高密度等离子体中的静电卡盘100包括其中具有至少一个传热气体流动管道150的电介质覆盖电极110。 包括电介质材料的电隔离器200定位在气流导管150中以（i）将导管中的气体与等离子体或电极110电隔离，和（ii）允许传热气体通过导管。 优选地，电介质材料包括具有高表面积的等离子体钝化材料，其在等离子体工艺中减少通过导管150的气体的等离子体形成。 还描述了一种用于快速充放电静电卡盘的半导体电介质部件115。

公开(公告)号：US5916689A

公开(公告)日：1999-06-29

申请号：US583975

申请日：1996-01-11

Applicant: Kenneth S. Collins ,  Joshua Chin-Wing Tsui ,  Douglas Buchberger

Inventor： Kenneth S. Collins ,  Joshua Chin-Wing Tsui ,  Douglas Buchberger

IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  B32B15/08

CPC classification number: H01L21/6833 ,  H01L21/6831 ,  H02N13/00 ,  Y10S156/914 ,  Y10T279/23 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/31699

Abstract: An electrostatic chuck including a pedestal having a conductive upper surface; and a layer of plasma-sprayed material formed on the upper surface of the pedestal and defining a surface onto which a substrate is placed during use, wherein the plasma-sprayed material exhibits the Johnson-Rahbeck effect when a bias is applied between the substrate and the pedestal.

Abstract translation: 一种静电卡盘，包括具有导电上表面的基座; 以及形成在基座的上表面上并且在使用期间限定其上放置基板的表面的等离子体喷涂材料层，其中当在衬底和衬底之间施加偏压时，等离子喷涂材料表现出约翰逊 - 拉贝克效应 基座。

公开(公告)号：US5871811A

公开(公告)日：1999-02-16

申请号：US477536

申请日：1995-06-07

Applicant: David Nin-Kou Wang ,  John M. White ,  Kam S. Law ,  Cissy Leung ,  Salvador P. Umotoy ,  Kenneth S. Collins ,  John A. Adamik ,  Ilya Perlov ,  Dan Maydan

Inventor： David Nin-Kou Wang ,  John M. White ,  Kam S. Law ,  Cissy Leung ,  Salvador P. Umotoy ,  Kenneth S. Collins ,  John A. Adamik ,  Ilya Perlov ,  Dan Maydan

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/314 ,  H01L21/316 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/402 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/31604

Abstract: A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.

Abstract translation: 一种用于保护衬底的选定区域以防止沉积在所选区域上的方法。 该方法包括以下步骤：将工艺气体流入衬底处理室并将吹扫气体流动到衬底的选定区域，以防止工艺气体接触选定区域或最小化工艺气体与所选区域之间的接触。 在各种实施例中，所选择的区域是衬底的背面周边或衬底的边缘。 同样在这些实施方案中，工艺气体流入沉积区，以便在衬底的上表面上沉积薄膜层，并建立工艺和吹扫气体的流动，使得工艺气体基本上流过 基板的上表面与基板边缘附近的吹扫气体结合，并通过排气系统离开处理室。

公开(公告)号：US5772832A

公开(公告)日：1998-06-30

申请号：US835091

申请日：1997-04-04

Applicant: Kenneth S. Collins ,  Jeffrey Marks

Inventor： Kenneth S. Collins ,  Jeffrey Marks

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/00

CPC classification number: H01J37/32871 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3345 ,  H01J2237/3346

Abstract: In an apparatus for producing an electromagnetically coupled planar plasma comprising a chamber having a dielectric shield in a wall thereof and a planar coil outside of said chamber and adjacent to said window coupled to a radio frequency source, the improvement whereby a scavenger for fluorine is mounted in or added to said chamber. When a silicon oxide is etched with a plasma of a fluorohydrocarbon gas, the fluorine scavenger reduces the free fluorine radicals, thereby improving the selectivity and anisotropy of etching and improving the etch rate while reducing particle formation.

公开(公告)号：US5755886A

公开(公告)日：1998-05-26

申请号：US483750

申请日：1995-06-07

Applicant: David Nin-Kou Wang ,  John M. White ,  Kam S. Law ,  Cissy Leung ,  Salvador P. Umotoy ,  Kenneth S. Collins ,  John A. Adamik ,  Ilya Perlov ,  Dan Maydan

Inventor： David Nin-Kou Wang ,  John M. White ,  Kam S. Law ,  Cissy Leung ,  Salvador P. Umotoy ,  Kenneth S. Collins ,  John A. Adamik ,  Ilya Perlov ,  Dan Maydan

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/314 ,  H01L21/316 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/402 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/31604

Abstract: A substrate processing reactor capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing. The reactor incorporates a uniform radial gas pumping system which enables uniform reactant gas flow across the wafer. Also included are upper and lower purge gas dispersers. The upper purge gas disperser directs purge gas flow downwardly toward the periphery of the wafer while the lower gas disperser directs purge gas across the backside of the wafer. The radial pumping gas system and purge gas dispersers sweep radially away from the wafer to prevent deposition external to the wafer and keep the chamber clean.

Abstract translation: 能够进行热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自清洁和其它基板处理操作的基板处理反应器，所有这些都可以单独进行或作为原位多步骤处理的一部分进行。 该反应器包含均匀的径向气体泵送系统，其能够跨过晶片均匀的反应气体流动。 还包括上部和下部吹扫气体分散器。 上部吹扫气体分散器将吹扫气体向下流向晶片的周边，而下部气体分散器引导吹扫气体穿过晶片的背面。 径向泵送气体系统和吹扫气体分散器径向扫掠离开晶片，以防止晶片外部沉积并保持室清洁。

公开(公告)号：US5312778A

公开(公告)日：1994-05-17

申请号：US618142

申请日：1990-11-23

Applicant: Kenneth S. Collins ,  Chan-Lon Yang ,  John M. White

Inventor： Kenneth S. Collins ,  Chan-Lon Yang ,  John M. White

IPC: C23C14/35 ,  C23C14/40 ,  C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/463

CPC classification number: H01J37/32082 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32623 ,  H05H1/46

Abstract: A method for plasma processing characterized by the steps of disposing a wafer proximate to a cathode within a process chamber, releasing a gas into the chamber, applying R.F. power in the VHF/UHF frequency range to the cathode to form a plasma within the chamber, developing a magnetic field within the chamber having flux lines substantially perpendicular to the surface of the wafer, and varying the strength of the magnetic field until a desired cathode sheath voltage is attained. The apparatus includes a chamber, a wafer-supporting cathode disposed within the chamber, a mechanism for introducing gas into the chamber, an R.F. power source coupled to the cathode operating in the frequency from about 50-800 megahertz, an electromagnetic coil disposed around the chamber adapted to develop a magnetic field within the chamber which is substantially perpendicular to the wafer and a variable output power supply coupled to the coil to vary the magnetic field strength and therefore the cathode sheath voltage within the chamber.

Abstract translation: 一种用于等离子体处理的方法，其特征在于以下步骤：在处理室内设置靠近阴极的晶片，将气体释放到室中，施加R.F. 在VHF / UHF频率范围内的功率到阴极以在室内形成等离子体，在室内形成具有基本上垂直于晶片表面的磁通线的磁场，并且改变磁场的强度，直到所需的阴极 获得鞘电压。 该装置包括腔室，设置在腔室内的晶片支撑阴极，用于将气体引入腔室的机构，R.F. 电源，其耦合到以大约50-800兆赫的频率工作的阴极;设置在所述腔室周围的电磁线圈，其适于在所述腔室内开发基本上垂直于所述晶片的磁场;以及耦合到所述线圈的可变输出电源 以改变室内的磁场强度和因此的阴极护套电压。

公开(公告)号：US5300460A

公开(公告)日：1994-04-05

申请号：US32744

申请日：1993-03-16

Applicant: Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

Inventor： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

IPC: C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/22 ,  H01L21/265

CPC classification number: H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H05H1/46

Abstract: An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm. By carrying out plasma-assisted processes using plasma operated within a range of from about 50 to about 800 MHz, the electrode sheath voltages are maintained sufficiently low, so as to avoid damage to structures on the wafer, yet sufficiently high to preferably permit initiation of the processes without the need for supplemental power sources. Operating in this frequency range may also result in reduction or elimination of microloading effects.

Abstract translation: 公开了使用等离子体辅助方法制造半导体晶片上的集成电路结构的改进方法，其中等离子体由VHF / UHF电源以约50至约800MHz的频率产生。 低压等离子体辅助蚀刻或沉积工艺，即工艺可以在不超过约500毫托的压力范围内进行; 阳极与阴极面积的比例为约2:1至约20:1，电极间距约为5cm。 到约30厘米。 高压等离子体辅助蚀刻或沉积工艺，即工艺可以在500毫乇至50乇以上的压力下进行; 阳极至阴极间距小于约5厘米。 通过使用在约50至约800MHz的范围内操作的等离子体等离子体辅助处理，电极护套电压保持足够低，以避免损坏晶片上的结构，但足够高以优选允许引发 该过程无需补充电源。 在该频率范围内工作也可能导致微载物效应的降低或消除。