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209 条记录 (耗时 0.031 秒)

    Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
    1.
    发明授权
    Method for plasma processing using magnetically enhanced plasma chemical vapor deposition 失效
    使用磁增强等离子体化学气相沉积的等离子体处理方法

    公开(公告)号：US5312778A

    公开(公告)日：1994-05-17

    申请号：US618142

    申请日：1990-11-23

    申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  John M. White

    发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  John M. White

    IPC分类号： C23C14/35 ,  C23C14/40 ,  C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/463

    CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32623 ,  H05H1/46

    摘要： A method for plasma processing characterized by the steps of disposing a wafer proximate to a cathode within a process chamber, releasing a gas into the chamber, applying R.F. power in the VHF/UHF frequency range to the cathode to form a plasma within the chamber, developing a magnetic field within the chamber having flux lines substantially perpendicular to the surface of the wafer, and varying the strength of the magnetic field until a desired cathode sheath voltage is attained. The apparatus includes a chamber, a wafer-supporting cathode disposed within the chamber, a mechanism for introducing gas into the chamber, an R.F. power source coupled to the cathode operating in the frequency from about 50-800 megahertz, an electromagnetic coil disposed around the chamber adapted to develop a magnetic field within the chamber which is substantially perpendicular to the wafer and a variable output power supply coupled to the coil to vary the magnetic field strength and therefore the cathode sheath voltage within the chamber.

    摘要翻译： 一种用于等离子体处理的方法，其特征在于以下步骤：在处理室内设置靠近阴极的晶片，将气体释放到室中，施加R.F. 在VHF / UHF频率范围内的功率到阴极以在室内形成等离子体，在室内形成具有基本上垂直于晶片表面的磁通线的磁场，并且改变磁场的强度，直到所需的阴极 获得鞘电压。 该装置包括腔室，设置在腔室内的晶片支撑阴极，用于将气体引入腔室的机构，R.F. 电源，其耦合到以大约50-800兆赫的频率工作的阴极;设置在所述腔室周围的电磁线圈，其适于在所述腔室内开发基本上垂直于所述晶片的磁场;以及耦合到所述线圈的可变输出电源 以改变室内的磁场强度和因此的阴极护套电压。

    Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
    3.
    发明授权
    Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography 失效
    氧化物蚀刻工艺，对氮化物具有高选择性，适用于不均匀地形的表面

    公开(公告)号：US06194325B1

    公开(公告)日：2001-02-27

    申请号：US08552030

    申请日：1995-12-04

    申请人： Chan Lon Yang ,  Jeffrey Marks ,  Nicolas Bright ,  Kenneth S. Collins ,  David Groechel ,  Peter Keswick

    发明人： Chan Lon Yang ,  Jeffrey Marks ,  Nicolas Bright ,  Kenneth S. Collins ,  David Groechel ,  Peter Keswick

    IPC分类号： H01L21302

    CPC分类号： H01J37/32871 ,  H01J37/321 ,  H01L21/31116

    摘要： A plasma etch process is described for the etching of oxide with a high selectivity to nitride, including nitride formed on uneven surfaces of a substrate, e.g., on sidewalls of steps on an integrated circuit structure. The addition of one or more hydrogen-containing gases, preferably one or more hydrofluorocarbon gases, to one or more fluorine-substituted hydrocarbon etch gases and a scavenger for fluorine, in a plasma etch process for etching oxide in preference to nitride, results in a high selectivity to nitride which is preserved regardless of the topography of the nitride portions of the substrate surface. In a preferred embodiment, one or more oxygen-bearing gases are also added to reduce the overall rate of polymer deposition on the chamber surfaces and on the surfaces to be etched, which can otherwise reduce the etch rate and cause excessive polymer deposition on the chamber surfaces. The fluorine scavenger is preferably an electrically grounded silicon electrode associated with the plasma.

    摘要翻译： 描述了用于蚀刻具有对氮化物的高选择性的氧化物的等离子体蚀刻工艺，包括在衬底的不平坦表面上形成的氮化物，例如在集成电路结构上的台阶侧壁上。 在优先于氮化物蚀刻氧化物的等离子体蚀刻工艺中，向一种或多种氟取代烃蚀刻气体和氟清除剂中加入一种或多种含氢气体，优选一种或多种氢氟烃气体，导致 对氮化物的高选择性，与衬底表面的氮化物部分的形貌无关地被保留。 在一个优选的实施方案中，还加入一种或多种含氧气体以降低腔室表面和待蚀刻表面上的聚合物沉积的总体速率，否则可降低蚀刻速率并导致室上过量的聚合物沉积 表面。 氟清除剂优选为与等离子体相关联的电接地硅电极。

    UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
    4.
    发明授权
    UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers 失效
    UHF / VHF等离子体，用于在半导体晶片上形成集成电路结构

    公开(公告)号：US5300460A

    公开(公告)日：1994-04-05

    申请号：US32744

    申请日：1993-03-16

    申请人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    发明人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/22 ,  H01L21/265

    CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H05H1/46

    摘要： An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm. By carrying out plasma-assisted processes using plasma operated within a range of from about 50 to about 800 MHz, the electrode sheath voltages are maintained sufficiently low, so as to avoid damage to structures on the wafer, yet sufficiently high to preferably permit initiation of the processes without the need for supplemental power sources. Operating in this frequency range may also result in reduction or elimination of microloading effects.

    摘要翻译： 公开了使用等离子体辅助方法制造半导体晶片上的集成电路结构的改进方法，其中等离子体由VHF / UHF电源以约50至约800MHz的频率产生。 低压等离子体辅助蚀刻或沉积工艺，即工艺可以在不超过约500毫托的压力范围内进行; 阳极与阴极面积的比例为约2:1至约20:1，电极间距约为5cm。 到约30厘米。 高压等离子体辅助蚀刻或沉积工艺，即工艺可以在500毫乇至50乇以上的压力下进行; 阳极至阴极间距小于约5厘米。 通过使用在约50至约800MHz的范围内操作的等离子体等离子体辅助处理，电极护套电压保持足够低，以避免损坏晶片上的结构，但足够高以优选允许引发 该过程无需补充电源。 在该频率范围内工作也可能导致微载物效应的降低或消除。

    Plasma reactor and processes using RF inductive coupling and scavenger temperature control
    9.
    发明授权
    Plasma reactor and processes using RF inductive coupling and scavenger temperature control 失效
    等离子体反应器和使用射频感应耦合和清除温度控制的工艺

    公开(公告)号：US5888414A

    公开(公告)日：1999-03-30

    申请号：US936777

    申请日：1997-09-24

    申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

    发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

    IPC分类号： C23C16/517 ,  H01L21/311 ,  C23F1/00

    CPC分类号： H01J37/32458 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32706 ,  H01L21/31116 ,  H01F2029/143

    摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

    摘要翻译： 等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。 天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。 可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

    VHF/UHF reactor system
    10.
    发明授权
    VHF/UHF reactor system 失效
    VHF / UHF反应堆系统

    公开(公告)号：US5210466A

    公开(公告)日：1993-05-11

    申请号：US852826

    申请日：1992-03-13

    申请人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    发明人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46

    CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H05H1/46 ,  H05K2201/10015 ,  H05K2201/10689

    摘要： A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.

    摘要翻译： 公开了一种等离子体处理反应器，其包括整体的同轴传输线结构，其将低功率损耗，非常短的传输线耦合到等离子体室，因此允许有效地使用VHF / UHF频率来产生等离子体。 在常规频率（如13.56 MHz）下，VHF / UHF频率在50-800兆赫兹范围内的使用提供了商业上可行的处理速率（分离和同步蚀刻和沉积）和皮套电压的显着降低。 结果，减少了电敏感小型几何装置的损坏概率。