公开(公告)号：US20120025244A1

公开(公告)日：2012-02-02

申请号：US13100879

申请日：2011-05-04

Applicant: Duk Il SUH ,  Jae Moo KIM ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Jin Woong LEE

Inventor： Duk Il SUH ,  Jae Moo KIM ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Jin Woong LEE

IPC: H01L33/58

CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.

Abstract translation: 本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。 根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层， 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。 第一分布布拉格反射器具有层叠结构，其具有交替层叠的SiO 2层和Nb 2 O 5层。

公开(公告)号：US20110169040A1

公开(公告)日：2011-07-14

申请号：US13073794

申请日：2011-03-28

Applicant: Won Cheol SEO ,  Joon Hee LEE ,  Jong Kyun YOU ,  Chang Youn KIM ,  Jin Cheul SHIN ,  Hwa Mok KIM ,  Jang Woo LEE ,  Yeo Jin YOON ,  Jong Kyu KIM

Inventor： Won Cheol SEO ,  Joon Hee LEE ,  Jong Kyun YOU ,  Chang Youn KIM ,  Jin Cheul SHIN ,  Hwa Mok KIM ,  Jang Woo LEE ,  Yeo Jin YOON ,  Jong Kyu KIM

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US07951630B2

公开(公告)日：2011-05-31

申请号：US12442617

申请日：2007-09-14

Applicant: Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

Inventor： Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

IPC: H01L21/00

CPC classification number: H01L33/0095 ,  H01L33/20

Abstract: The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.

Abstract translation: 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤：制备基底; 在所述基板上层叠所述半导体层，所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽，直到基板被暴露，由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例，形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜，由此与没有倾斜的发光二极管芯片相比，其方向角度变宽。 随着发光二极管芯片的方位角变宽，当使用发光二极管芯片和荧光体制造白色发光器件时，即使荧光体不集中在器件的中心，也可以调整光均匀性。 因此，通过减少由分散在中心部分的荧光体的量增加引起的遮光现象，可以提高整体发光效率。

公开(公告)号：US20100289040A1

公开(公告)日：2010-11-18

申请号：US12811047

申请日：2008-12-24

Applicant: Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

Inventor： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

IPC: H01L33/10 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L21/78

CPC classification number: H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

Abstract translation: 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

公开(公告)号：US20100102337A1

公开(公告)日：2010-04-29

申请号：US12607644

申请日：2009-10-28

Applicant: Chung-Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

Inventor： Chung-Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/48 ,  H05B33/0821

Abstract: The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

公开(公告)号：US20100096977A1

公开(公告)日：2010-04-22

申请号：US12581507

申请日：2009-10-19

Applicant: Chung Hoon LEE ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

Inventor： Chung Hoon LEE ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC: H01J1/62

CPC classification number: H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

Abstract: Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.

Abstract translation: 公开了具有长持久性荧光体和具有该荧光体的AC发光器件模块的交流发光器件。 根据本发明的示例性实施例，发光器件包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 此外，第一长持续荧光体位于第一发光二极管芯片上，以对从第一发光二极管芯片发射的光的一部分进行波长转换; 并且第二长持续荧光体位于第二发光二极管芯片上，以对从第二发光二极管芯片发射的光的一部分进行波长转换。 使得由第二长持续荧光体产生的余辉发光与第一长持续荧光体不同，从而可以进一步减轻AC发光器件的闪烁效应。

公开(公告)号：US20100047943A1

公开(公告)日：2010-02-25

申请号：US12613275

申请日：2009-11-05

Applicant: Jong Lam LEE ,  Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Dae Won KIM

Inventor： Jong Lam LEE ,  Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Dae Won KIM

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

Abstract translation: 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

公开(公告)号：US20080237613A1

公开(公告)日：2008-10-02

申请号：US12065063

申请日：2006-09-06

Applicant: Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

Inventor： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/007 ,  H01L33/20 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265

Abstract: Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.

Abstract translation: 公开了具有光子晶体结构的AC发光器件及其制造方法。 发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。 此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。 此外，在第二导电型半导体层中形成光子晶体结构。 光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。 此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

公开(公告)号：US20080230793A1

公开(公告)日：2008-09-25

申请号：US12090050

申请日：2006-11-28

Applicant: Yeo Jin Yoon ,  Won Cheol Seo

Inventor： Yeo Jin Yoon ,  Won Cheol Seo

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/22

Abstract: Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

Abstract translation: 本文公开了用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。

公开(公告)号：US09847371B2

公开(公告)日：2017-12-19

申请号：US13146073

申请日：2010-02-12

Applicant: Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

Inventor： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/50 ,  H05B33/08

CPC classification number: H01L27/153 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H05B33/0821 ,  H01L2924/00014

Abstract: A light emitting diode (LED) chip for high voltage operation and an LED package including the same are disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.