公开(公告)号：US07671466B2

公开(公告)日：2010-03-02

申请号：US11647832

申请日：2006-12-29

申请人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/34 ,  H05K7/20 ,  H01L21/00

CPC分类号： H01L23/473 ,  H01L21/563 ,  H01L23/3157 ,  H01L2224/16225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253

摘要： A semiconductor package with a heat dissipating device and a fabrication method of the semiconductor package are provided. A chip is mounted on a substrate. The heat dissipating device is mounted on the chip, and includes an accommodating room, and a first opening and a second opening that communicate with the accommodating room. An encapsulant is formed between the heat dissipating device and the substrate to encapsulate the chip. A cutting process is performed to remove a non-electrical part of structure and expose the first and second openings from the encapsulant. A cooling fluid is received in the accommodating room to absorb and dissipate heat produced by the chip. The heat dissipating device covers the encapsulant and the chip to provide a maximum heat transfer area for the semiconductor package.

摘要翻译： 提供了具有散热装置的半导体封装和半导体封装的制造方法。 芯片安装在基板上。 散热装置安装在芯片上，并且包括容纳室，以及与容纳室连通的第一开口和第二开口。 在散热装置和衬底之间形成密封剂以封装芯片。 执行切割处理以去除结构的非电气部分，并使第一和第二开口与密封剂暴露。 冷却流体容纳在容纳室中以吸收和散发由芯片产生的热量。 散热装置覆盖密封剂和芯片，以为半导体封装提供最大的传热面积。

公开(公告)号：US07666779B2

公开(公告)日：2010-02-23

申请号：US12060379

申请日：2008-04-01

申请人： Chun-Chi Ke ,  Kook-Jui Tai ,  Chien-Ping Huang

发明人： Chun-Chi Ke ,  Kook-Jui Tai ,  Chien-Ping Huang

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/14104 ,  H01L2924/0001 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/013

摘要： A semiconductor device and a fabrication method thereof are provided. A semiconductor substrate having a plurality of bonding pads is prepared, and a first passivation layer, a second passivation layer and a metallic layer are successively formed on the semiconductor substrate. A third passivation layer is further applied on the semiconductor substrate and has a plurality of openings for exposing a portion of the metallic layer, wherein each of the openings is shifted in position from a corresponding one of the bonding pads by a distance not exceeding a radius of the bonding pad. A plurality of solder bumps are bonded to the exposed portion of the metallic layer and have a larger contact area with the third passivation layer. This provides better buffer to reduce stress exerted on the solder bumps, thereby preventing problems of cracking and delamination as in the prior art.

摘要翻译： 提供半导体器件及其制造方法。 制备具有多个接合焊盘的半导体衬底，并且在半导体衬底上依次形成第一钝化层，第二钝化层和金属层。 第三钝化层进一步施加在半导体衬底上并且具有用于暴露金属层的一部分的多个开口，其中每个开口从对应的一个焊盘移位一定距离不超过半径 的焊盘。 多个焊料凸点与金属层的露出部分接合，并且与第三钝化层具有较大的接触面积。 这提供了更好的缓冲器以减少施加在焊料凸块上的应力，从而防止了现有技术中的开裂和分层问题。

公开(公告)号：US20100041181A1

公开(公告)日：2010-02-18

申请号：US12567611

申请日：2009-09-25

申请人： Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/78

CPC分类号： H01L23/3675 ,  H01L21/4871 ,  H01L21/50 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3677 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92147 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A heat dissipating package structure includes a chip carrier; a semiconductor chip mounted and electrically connected to the chip carrier; a heat spreader having a first surface, an opposed second surface and a hollow structure, the second surface of the heat spreader being mounted on the chip, wherein the chip is larger in size than the hollow structure such that the chip is partly exposed to the hollow structure; an encapsulant formed between the heat spreader and the chip carrier, for encapsulating the chip, wherein the first surface and sides of the heat spreader are exposed from the encapsulant to dissipate heat produced from the chip; and a plurality of conductive elements disposed on the chip carrier, for electrically connecting the chip to an external device. The present invention also provides a method for fabricating the heat dissipating package structure.

摘要翻译： 散热封装结构包括芯片载体; 安装并电连接到芯片载体的半导体芯片; 具有第一表面，相对的第二表面和中空结构的散热器，散热器的第二表面安装在芯片上，其中芯片的尺寸大于中空结构，使得芯片部分地暴露于 中空结构; 在散热器和芯片载体之间形成的用于封装芯片的密封剂，其中散热器的第一表面和侧面从密封剂暴露以散发从芯片产生的热量; 以及设置在芯片载体上的多个导电元件，用于将芯片电连接到外部设备。 本发明还提供一种制造散热封装结构的方法。

公开(公告)号：US07629199B2

公开(公告)日：2009-12-08

申请号：US11713362

申请日：2007-03-01

申请人： Chien-Ping Huang ,  Yu-Po Wang

发明人： Chien-Ping Huang ,  Yu-Po Wang

IPC分类号： H01L21/00

CPC分类号： H01L24/10 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/24 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/20 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/00

摘要： A semiconductor package with build-up layers formed on a chip and a fabrication method of the semiconductor package are provided. A chip with a plurality of conductive bumps formed on bond pads thereof is received within a cavity of a carrier, and a dielectric layer encapsulates the conductive bumps whose ends are exposed. A plurality of conductive traces are formed on the dielectric layer and electrically connected to the ends of the conductive bumps. A solder mask layer is applied over the conductive traces and formed with openings via which predetermined portions of the conductive traces are exposed and bonded to a plurality of solder balls. Thereby, positions of the bond pads are easily recognized and distinguished by the exposed ends of the conductive bumps, making the conductive traces capable of being well electrically connected through the conductive bumps to the bond pads to improve yield of the fabricated packages.

摘要翻译： 提供了一种形成在芯片上的积层的半导体封装以及半导体封装的制造方法。 在其接合焊盘上形成有多个导电凸块的芯片被容纳在载体的空腔内，并且介电层封装其端部露出的导电凸块。 多个导电迹线形成在电介质层上并与导电凸块的端部电连接。 焊接掩模层施加在导电迹线上并形成有开口，通过该开口，导电迹线的预定部分暴露并结合到多个焊球。 因此，接合焊盘的位置容易地被导电凸块的露出端识别和区分，使得导电迹线能够通过导电凸块与接合焊盘良好地电连接，以提高制造的封装的产量。

公开(公告)号：US07615862B2

公开(公告)日：2009-11-10

申请号：US11161882

申请日：2005-08-19

申请人： Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/34 ,  H01L23/10

CPC分类号： H01L23/3675 ,  H01L21/4871 ,  H01L21/50 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3677 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92147 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A heat dissipating package structure includes a chip carrier; a semiconductor chip mounted and electrically connected to the chip carrier; a heat spreader having a first surface, an opposed second surface and a hollow structure, the second surface of the heat spreader being mounted on the chip, wherein the chip is larger in size than the hollow structure such that the chip is partly exposed to the hollow structure; an encapsulant formed between the heat spreader and the chip carrier, for encapsulating the chip, wherein the first surface and sides of the heat spreader are exposed from the encapsulant to dissipate heat produced from the chip; and a plurality of conductive elements disposed on the chip carrier, for electrically connecting the chip to an external device. The present invention also provides a method for fabricating the heat dissipating package structure.

摘要翻译： 散热封装结构包括芯片载体; 安装并电连接到芯片载体的半导体芯片; 具有第一表面，相对的第二表面和中空结构的散热器，散热器的第二表面安装在芯片上，其中芯片的尺寸大于中空结构，使得芯片部分地暴露于 中空结构; 在散热器和芯片载体之间形成的用于封装芯片的密封剂，其中散热器的第一表面和侧面从密封剂暴露以散发从芯片产生的热量; 以及设置在芯片载体上的多个导电元件，用于将芯片电连接到外部设备。 本发明还提供一种制造散热封装结构的方法。

公开(公告)号：US20080251910A1

公开(公告)日：2008-10-16

申请号：US12082718

申请日：2008-04-11

申请人： Chih-Wei Chang ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chun-Ming Liao ,  Cheng-Hsu Hsiao

发明人： Chih-Wei Chang ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chun-Ming Liao ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/36 ,  H01L21/56

CPC分类号： H01L21/56 ,  H01L23/4334 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01079

摘要： A method for fabricating semiconductor packages is disclosed, including mounting and electrically connecting a semiconductor chip onto a chip carrier; mounting a heat-dissipating structure on the semiconductor chip; placing the heat-dissipating structure into a mold cavity for filling therein a packaging material to form an encapsulant, wherein the heat-dissipating structure has a heat spreader having a size larger than that of the predetermined size of the semiconductor package, a covering layer formed on the, and a plurality of protrusions formed on edges of the covering layer that are free from being corresponding in position to the semiconductor chip, such that the protrusions can abut against a top surface of the mold cavity to prevent the heat spreader from being warped; and finally performing a singulation process according to the predetermined size and removing the encapsulant formed on the covering layer to form the desired semiconductor package. Also, this invention discloses a heat-dissipating structure applicable to the method described above.

摘要翻译： 公开了一种用于制造半导体封装的方法，包括将半导体芯片安装并电连接到芯片载体上; 在半导体芯片上安装散热结构; 将散热结构放置在模腔中，用于在其中填充包装材料以形成密封剂，其中散热结构具有尺寸大于半导体封装的预定尺寸的散热器，形成覆盖层 以及在覆盖层的边缘上形成的多个突起，其不与半导体芯片的位置相对应，使得突起可抵靠模腔的顶表面以防止散热器翘曲 ; 最后按照规定的尺寸进行分割处理，除去覆盖层上形成的密封剂，形成所需的半导体封装。 此外，本发明公开了一种适用于上述方法的散热结构。

公开(公告)号：US20080182401A1

公开(公告)日：2008-07-31

申请号：US12060379

申请日：2008-04-01

申请人： Chun-Chi Ke ,  Kook-Jui Tai ,  Chien-Ping Huang

发明人： Chun-Chi Ke ,  Kook-Jui Tai ,  Chien-Ping Huang

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/14104 ,  H01L2924/0001 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/013

摘要： A semiconductor device and a fabrication method thereof are provided. A semiconductor substrate having a plurality of bonding pads is prepared, and a first passivation layer, a second passivation layer and a metallic layer are successively formed on the semiconductor substrate. A third passivation layer is further applied on the semiconductor substrate and has a plurality of openings for exposing a portion of the metallic layer, wherein each of the openings is shifted in position from a corresponding one of the bonding pads by a distance not exceeding a radius of the bonding pad. A plurality of solder bumps are bonded to the exposed portion of the metallic layer and have a larger contact area with the third passivation layer. This provides better buffer to reduce stress exerted on the solder bumps, thereby preventing problems of cracking and delamination as in the prior art.

摘要翻译： 提供半导体器件及其制造方法。 制备具有多个接合焊盘的半导体衬底，并且在半导体衬底上依次形成第一钝化层，第二钝化层和金属层。 第三钝化层进一步施加在半导体衬底上并且具有用于暴露金属层的一部分的多个开口，其中每个开口从对应的一个焊盘移位一定距离不超过半径 的焊盘。 多个焊料凸点与金属层的露出部分接合，并且与第三钝化层具有较大的接触面积。 这提供了更好的缓冲器以减少施加在焊料凸块上的应力，从而防止了现有技术中的开裂和分层问题。

公开(公告)号：US20080122070A1

公开(公告)日：2008-05-29

申请号：US11986359

申请日：2007-11-21

申请人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chih-Wei Chang ,  Cheng-Hsu Hsiao

发明人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chih-Wei Chang ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/373 ,  H01L21/58

CPC分类号： H01L23/3128 ,  H01L21/568 ,  H01L23/4334 ,  H01L24/16 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/16152 ,  H01L2224/0401

摘要： A heat dissipating semiconductor package and a fabrication method therefor are provided. The fabrication method for the heat dissipating semiconductor package mainly includes steps of: containing a substrate having a chip mounted thereon in an aperture of a carrier; mounting a heat dissipating sheet having supporting portions on the carrier with the heat dissipating sheet being attached on the chip; forming an encapsulant to encapsulate the semiconductor chip and the heat dissipating structure; removing a part of the encapsulant above the heat dissipating sheet with a part of the heat dissipating sheet exposed from the encapsulant by lapping; and forming a cover layer on the part of heat dissipating sheet to prevent it from oxidation; and cutting along a predetermined size of the semiconductor package, thereby heat generated from an operation of the chip is dissipated via the heat dissipating structure.

摘要翻译： 提供一种散热半导体封装及其制造方法。 用于散热半导体封装的制造方法主要包括以下步骤：将载置有孔的芯片安装在其上; 将散热板安装在载体上，并将散热板安装在芯片上; 形成密封剂以封装半导体芯片和散热结构; 通过研磨从所述密封剂暴露出的部分所述散热片去除所述散热片上方的所述密封剂的一部分; 在散热片的一部分上形成覆盖层以防止其氧化; 并且沿着预定尺寸的半导体封装进行切割，由此从芯片的操作产生的热量经由散热结构消散。

公开(公告)号：US07371617B2

公开(公告)日：2008-05-13

申请号：US11580736

申请日：2006-10-12

申请人： Ho-Yi Tsai ,  Chien-Ping Huang

发明人： Ho-Yi Tsai ,  Chien-Ping Huang

IPC分类号： H01L21/00

CPC分类号： H01L23/4334 ,  H01L23/3128 ,  H01L23/4951 ,  H01L23/49816 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0401

摘要： A semiconductor package with a heat sink and a method for fabricating the same are proposed. The heat sink is provided with a rigid and thermally resistant detach member on a top surface thereof, and is attached via its bottom surface to a chip mounted on a chip carrier. The detach member is sized larger than the heat sink and can be easily removed from the top surface of the heat sink. Subsequently, a molding process is performed to form an encapsulant for completely encapsulating the chip, the heat sink and the detach member. Then, a singulation process is performed to cut along predetermined cutting lines located between sides of the heat sink and corresponding sides of the detach member. Finally, the detach member and a portion of the encapsulant formed on the detach member are removed from the heat sink. The above fabrication method reduces the packaging cost.

摘要翻译： 提出了具有散热器的半导体封装及其制造方法。 散热器在其顶表面上设置有刚性且耐热的分离构件，并且经由其底表面附接到安装在芯片载体上的芯片。 分离构件的尺寸大于散热器，并且可以容易地从散热器的顶表面去除。 随后，进行模制处理以形成用于完全封装芯片，散热器和分离构件的密封剂。 然后，进行切割处理，以沿着位于散热片的侧面和分离构件的相应侧面之间的预定切割线切割。 最后，分离构件和形成在分离构件上的密封剂的一部分从散热器移除。 上述制造方法降低了包装成本。

公开(公告)号：US07358177B2

公开(公告)日：2008-04-15

申请号：US11190271

申请日：2005-07-26

申请人： Chun-Chi Ke ,  Chien-Ping Huang

发明人： Chun-Chi Ke ,  Chien-Ping Huang

IPC分类号： H01L21/44

CPC分类号： H01L24/03 ,  H01L2224/0401 ,  H01L2224/73204 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014

摘要： A fabrication method of under bump metallurgy (UBM) structure is provided. A blocking layer is applied over a surface of a semiconductor element formed with at least one bond pad and a passivation layer thereon. The passivation layer covers the semiconductor element and exposes the bond pad, and the blocking layer covers the bond pad and the passivation layer. The blocking layer is formed with at least one opening at a position corresponding to the bond pad. Metallic layers are formed on a surface of the blocking layer and at the opening. The metallic layers are patterned to form a UBM structure at the opening corresponding to the bond pad. Then the blocking layer is removed. The blocking layer can separate the metallic layers for forming the UBM structure from the passivation layer to prevent metallic residues of the UBM structure from being left on the passivation layer.

摘要翻译： 提供了一种凸块下冶金（UBM）结构的制造方法。 在其上形成有至少一个接合焊盘和钝化层的半导体元件的表面上施加阻挡层。 钝化层覆盖半导体元件并暴露接合焊盘，并且阻挡层覆盖接合焊盘和钝化层。 阻挡层在对应于接合焊盘的位置处形成有至少一个开口。 金属层形成在阻挡层的表面和开口处。 金属层被图案化以在对应于接合焊盘的开口处形成UBM结构。 然后去除阻挡层。 阻挡层可以将用于形成UBM结构的金属层与钝化层分开，以防止UBM结构的金属残留物残留在钝化层上。