公开(公告)号：US20090272991A1

公开(公告)日：2009-11-05

申请号：US12442511

申请日：2007-09-04

申请人： Chung Hoon Lee ,  Joe Ho Lee ,  Mi Hae Kim

发明人： Chung Hoon Lee ,  Joe Ho Lee ,  Mi Hae Kim

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/49107

摘要： A light emitting diode having an AlInGaP active layer and a method of fabricating the same are disclosed. The light emitting diode includes a substrate. A plurality of light emitting cells are positioned to be spaced apart from one another, wherein each of the light emitting cells has a first conductive-type lower semiconductor layer, an AlInGaP active layer and a second conductive-type upper semiconductor layer. Meanwhile, a semi-insulating layer is interposed between the substrate and the light emitting cells. Further, wires connect the plurality of light emitting cells in series. Accordingly, it is possible to provide a light emitting diode, in which a plurality of light emitting cells are connected in series to one another through wires to be driven by an AC power source.

摘要翻译： 公开了具有AlInGaP有源层的发光二极管及其制造方法。 发光二极管包括基板。 多个发光单元被定位成彼此间隔开，其中每个发光单元具有第一导电型下半导体层，AlInGaP有源层和第二导电型上半导体层。 同时，在衬底和发光单元之间插入半绝缘层。 此外，电线串联连接多个发光单元。 因此，可以提供一种发光二极管，其中多个发光单元通过由AC电源驱动的导线彼此串联连接。

公开(公告)号：US20090050849A1

公开(公告)日：2009-02-26

申请号：US12196923

申请日：2008-08-22

申请人： Chung Hoon Lee ,  Walter Tews ,  Gundula Roth ,  Stefan Tews

发明人： Chung Hoon Lee ,  Walter Tews ,  Gundula Roth ,  Stefan Tews

IPC分类号： C09K11/79

CPC分类号： C09K11/7734 ,  Y02B20/181

摘要： Disclosed are non stoichiometric Copper Alkaline Earth Silicate phosphors activated by divalent europium for using them as high temperature stable luminescent materials for ultraviolet or daylight excitation. The phosphors are represented as the formula (BauSrvCawCux)3-y(Zn,Mg,Mn)zSi1+bO5+2b:Eua. The nonstoichiometric tetragonal silicate is prepared in a high temperature solid state reaction with a surplus of silica in the starting mixture. Furthermore, luminescent tetragonal Copper Alkaline Earth Silicates are provided for LED applications, which have a high color temperature range from about 2,000K to 8,000K or 10,000K showing a CRI with Ra=80˜95, when mixed with other luminescent materials.

摘要翻译： 公开了由二价铕活化的非化学计量的铜碱土硅酸盐荧光体，用于将其用作用于紫外线或日光激发的高温稳定发光材料。 磷光体用式（BauSrvCawCux）3-y（Zn，Mg，Mn）zSi1 + bO5 + 2b：Eua表示。 非化学计量的四方硅酸盐在起始混合物中与多余二氧化硅的高温固相反应制备。 此外，发光四方铜碱土硅酸盐提供用于LED应用，其具有约2,000K至8,000K或10,000K的高色温，当与其它发光材料混合时，其具有Ra = 80〜95的CRI。

公开(公告)号：US07467751B2

公开(公告)日：2008-12-23

申请号：US11064226

申请日：2005-02-22

申请人： Bradley James Larson ,  Chung Hoon Lee ,  Amit Lal ,  Max G. Lagally

发明人： Bradley James Larson ,  Chung Hoon Lee ,  Amit Lal ,  Max G. Lagally

IPC分类号： B05B1/08

CPC分类号： B01L3/0268 ,  B01J2219/00367 ,  B01J2219/00378 ,  B01J2219/00527 ,  B01J2219/00533 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00659 ,  B01J2219/00689 ,  B01J2219/00722 ,  B01L99/00 ,  B01L2300/0819 ,  B01L2300/0867 ,  B01L2400/0439 ,  C40B40/06 ,  C40B60/14 ,  G01N2035/1041

摘要： Devices and methods for depositing fluids on substrates in patterns of spots, lines, or other features use a nozzle, which is preferably configured similarly to a micropipette, having a piezoelectric crystal or other ultrasonic actuator coupled to one of its sides. The nozzle may be charged via capillary action by dipping it into a well containing the fluid to be deposited, and may then be positioned over a desired area of a substrate, at which point activation of the ultrasonic actuator at ultrasonic frequencies will eject the fluid onto the substrate. The needle may subsequently be dipped into a well of rinsing fluid for cleaning. Spots or lines on the order of 5 micrometers width may be generated, making the invention particularly suitable for use in biological applications such as microarray production and in microelectronics applications such as the printing of organic circuitry.

摘要翻译： 用于以斑点，线或其它特征的图案在基底上沉积流体的装置和方法使用喷嘴，其优选地被配置为类似于具有耦合到其一侧的压电晶体或其它超声致动器的微量移液管。 喷嘴可以通过将毛细管作用浸入含有要沉积的流体的孔中而被充电，然后可以将其定位在衬底的期望区域上，此时超声波致动器在超声频率下的激活将喷射流体到 底物。 随后将针浸入冲洗液的孔中进行清洗。 可能产生5微米宽度的斑点或线，使得本发明特别适用于生物应用，如微阵列生产和微电子应用，如有机电路的印刷。

公开(公告)号：US20080164485A1

公开(公告)日：2008-07-10

申请号：US11813812

申请日：2005-07-04

申请人： Chung Hoon Lee

发明人： Chung Hoon Lee

IPC分类号： H01L33/00 ,  H01L21/60

CPC分类号： H01L27/153 ,  H01L27/156 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Disclosed are a light emitting device having a plurality of light emitting cells connected in series and a method of fabricating the same. The light emitting device includes a buffer layer formed on a substrate. A plurality of rod-shaped light emitting cells are located on the buffer layer to be spaced apart from one another. Each of the light emitting cells has an n-layer, an active layer and a p-layer. Meanwhile, wires connect the spaced light emitting cells in series or parallel. Accordingly, arrays of the light emitting cells connected in series are connected to be driven by currents flowing in opposite directions. Thus, there is provided a light emitting device that can be directly driven by an AC power source.

摘要翻译： 公开了具有串联连接的多个发光单元的发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层。 多个棒状发光单元位于缓冲层上以彼此间隔开。 每个发光单元具有n层，有源层和p层。 同时，电线将间隔开的发光单元串联或并联连接。 因此，串联连接的发光单元的阵列被连接以由相反方向流动的电流驱动。 因此，提供了可以由AC电源直接驱动的发光器件。

公开(公告)号：US07109121B2

公开(公告)日：2006-09-19

申请号：US10876140

申请日：2004-06-24

申请人： Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

发明人： Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

IPC分类号： H01L21/302

CPC分类号： B81C1/00666 ,  B81C2201/0167 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/78603 ,  H01L29/78639 ,  Y10S438/962

摘要： A method of forming a suspended semiconductor film is provided comprising providing a semiconductor structure including a layer of semiconductor film over a sacrificial layer, the semiconductor film secured to a substrate; depositing a film of material over the semiconductor film that has a tensile or compressive strain with respect to the semiconductor film patterning the deposited film to leave opposed segments spaced from each other by a central portion of the semiconductor film; patterning the semiconductor film and removing the sacrificial layer beneath the semiconductor film to leave a semiconductor film section anchored to the substrate at at least two anchor positions, with the film segments remaining on the semiconductor film adjacent to the anchor positions and spaced from each other by the central position of the suspended semiconductor film such that the film segments apply a tensile or compressive stress to the suspended semiconductor film.

摘要翻译： 提供一种形成悬浮半导体膜的方法，包括提供包括在牺牲层上的半导体膜层的半导体结构，所述半导体膜固定到基底上; 在半导体膜上沉积相对于图案化沉积膜的半导体膜具有拉伸或压缩应变的材料膜，以通过半导体膜的中心部分彼此隔开相对的部分; 图案化半导体膜并去除半导体膜下面的牺牲层，以在至少两个锚定位置处留下半导体膜部分锚定到衬底，其中膜片段保留在半导体膜上邻近锚定位置并且彼此间隔开 悬浮半导体膜的中心位置，使得膜段对悬浮的半导体膜施加拉伸或压缩应力。

公开(公告)号：US09711693B2

公开(公告)日：2017-07-18

申请号：US14731046

申请日：2015-06-04

申请人： Chung Hoon Lee ,  Dae Sung Kal ,  Ki Bum Nam

发明人： Chung Hoon Lee ,  Dae Sung Kal ,  Ki Bum Nam

IPC分类号： H01L33/50 ,  H01L23/00 ,  H01L23/498 ,  H01L33/36 ,  H01L33/44 ,  H01L33/00 ,  H01L33/48

CPC分类号： H01L33/507 ,  H01L23/49805 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/94 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05571 ,  H01L2224/06151 ,  H01L2224/11462 ,  H01L2224/16013 ,  H01L2224/16057 ,  H01L2224/16151 ,  H01L2224/27462 ,  H01L2224/32238 ,  H01L2224/325 ,  H01L2224/33151 ,  H01L2224/81893 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83893 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

摘要： A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

公开(公告)号：US08937326B2

公开(公告)日：2015-01-20

申请号：US13033702

申请日：2011-02-24

申请人： Chung Hoon Lee ,  Keon Young Lee ,  Hong San Kim ,  Dae Won Kim ,  Hyuck Jung Choi

发明人： Chung Hoon Lee ,  Keon Young Lee ,  Hong San Kim ,  Dae Won Kim ,  Hyuck Jung Choi

IPC分类号： H01L33/62 ,  H01L27/15 ,  F21K99/00 ,  H01L33/48 ,  H01L33/64

CPC分类号： H01L33/36 ,  F21K9/00 ,  H01L27/153 ,  H01L33/20 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00014

摘要： Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

摘要翻译： 公开了具有串联耦合的发光单元阵列的发光二极管（LED）封装。 LED封装包括安装在封装主体上的封装体和LED芯片。 LED芯片具有串联耦合的发光单元阵列。 由于具有串联耦合的发光单元阵列的LED芯片安装在LED封装上，所以可以使用AC电源直接驱动。

公开(公告)号：US08592232B2

公开(公告)日：2013-11-26

申请号：US13359287

申请日：2012-01-26

申请人： Dae Woong Suh ,  Chung Hoon Lee

发明人： Dae Woong Suh ,  Chung Hoon Lee

IPC分类号： H01L33/44

CPC分类号： H01L33/44 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/22 ,  H01L33/486 ,  H01L33/50 ,  H01L33/507 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00

摘要： Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.

摘要翻译： 公开了晶圆级LED封装及其制造方法。 制造晶片级LED封装的方法包括：在第一衬底上形成多个半导体堆叠，每个半导体堆叠包括第一导电型半导体层，第二导电型半导体层和有源区 设置在第一导电型半导体层和第二导电型半导体层之间; 制备第二衬底，其包括对应于所述多个半导体堆叠布置的第一引线电极和第二引线电极; 将所述多个半导体堆叠接合到所述第二基板; 以及在所述接合完成之后将所述第一基板和所述第二基板切割成多个封装。 因此，提供了晶片级LED封装。

公开(公告)号：US08581286B2

公开(公告)日：2013-11-12

申请号：US13209733

申请日：2011-08-15

申请人： Chung Hoon Lee ,  Walter Tews ,  Gundula Roth ,  Detlef Starick

发明人： Chung Hoon Lee ,  Walter Tews ,  Gundula Roth ,  Detlef Starick

IPC分类号： H01L33/00

CPC分类号： C09K11/7734 ,  C09K11/025 ,  H01L33/501 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/19107 ,  Y02B20/181 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2998 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Exemplary embodiments of the present invention relate to a light emitting device including a light emitting diode and a surface-modified luminophore. The surface-modified luminophore includes a silicate luminophore and a fluorinated coating arranged on the silicate luminophore.

摘要翻译： 本发明的示例性实施例涉及包括发光二极管和表面改性发光体的发光器件。 表面改性的发光体包括硅酸盐发光体和布置在硅酸盐发光体上的氟化涂层。

公开(公告)号：US20130264600A1

公开(公告)日：2013-10-10

申请号：US13992941

申请日：2011-06-30

申请人： Chung Hoon Lee ,  Dae Sung Kal ,  Ki Bum Nam

发明人： Chung Hoon Lee ,  Dae Sung Kal ,  Ki Bum Nam

IPC分类号： H01L33/00 ,  H01L33/50

CPC分类号： H01L33/507 ,  H01L23/49805 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/94 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05571 ,  H01L2224/06151 ,  H01L2224/11462 ,  H01L2224/16013 ,  H01L2224/16057 ,  H01L2224/16151 ,  H01L2224/27462 ,  H01L2224/32238 ,  H01L2224/325 ,  H01L2224/33151 ,  H01L2224/81893 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83893 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

摘要： A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided.

摘要翻译： 一种制造使用组合键的半导体器件的方法和由其制造的半导体器件，该方法包括制备具有在其顶部上排列的多个半导体叠层结构的支撑衬底。 每个半导体堆叠结构包括第一导电半导体层，第二导电半导体层和介于第一和第二导电半导体层之间的有源区。 准备具有第一引线电极和第二引线电极的部件以对应于多个半导体叠层结构。 然后，将半导体堆叠结构保持在支撑基板上，同时保持半导体堆叠结构。 在半导体堆叠结构结合到构件之后，构件被分割。