公开(公告)号：US5281283A

公开(公告)日：1994-01-25

申请号：US985751

申请日：1992-12-04

申请人： Hiroyuki Tokunaga ,  Takao Yonehara

发明人： Hiroyuki Tokunaga ,  Takao Yonehara

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/20

CPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  Y10S148/026

摘要： A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a III-V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).

摘要翻译： III-V族化合物晶体制品包括具有较小成核密度（SNDS）的非成核表面和与所述非成核表面（SNDS）相邻布置的成核表面（SNDL）的基底具有足够小的面积 使得晶体仅从所述非成核表面（SNDS）的单核和较大的成核密度（NDL）生长，并且由非晶材料和III-V族化合物单晶 在所述基底上从所述单核生长并在所述非成核表面（SNDS）上超过所述成核表面（SNDL）扩散。

公开(公告)号：US5278093A

公开(公告)日：1994-01-11

申请号：US919372

申请日：1992-07-29

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： H01L21/20

CPC分类号： H01L21/2022 ,  Y10S148/154

摘要： A method for forming a semiconductor thin film comprises crystallizing an amorphous silicon thin film by a first thermal treatment at 700.degree. C. or lower for ten hours or longer and carrying out a second thermal treatment at 1200.degree. C. or higher in which a lamp light is radiated to the crystallized thin film.

摘要翻译： 一种半导体薄膜的形成方法，其特征在于，在700℃以下进行10小时以上的第1次热处理，在1200℃以上进行第2次热处理，使非晶硅薄膜结晶化， 光被照射到结晶​​的薄膜上。

公开(公告)号：US5254211A

公开(公告)日：1993-10-19

申请号：US759768

申请日：1991-09-13

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： C30B19/02 ,  C30B19/12 ,  C30B19/06

CPC分类号： C30B19/02 ,  C30B19/12

摘要： A method of forming a crystal comprises a crystal forming treatment effected by dipping a substrate having a nonnucleation surface having a small nucleation density and a nucleation surface having a larger nucleation density than said nonnucleation surface and an area sufficiently fine to such an extent as to allow only a single nucleus to be formed in a solution containing a monocrystal forming material to thereby allow a monocrystal to grow from only the single nucleus.

摘要翻译： 形成晶体的方法包括通过浸渍具有小成核密度的非成核表面的基底和具有比所述非成核表面更大成核密度的成核表面的基底和足够细的面积至允许 仅在含有单晶形成材料的溶液中形成的单个核，从而允许单晶仅从单个核生长。

公开(公告)号：US5250460A

公开(公告)日：1993-10-05

申请号：US958724

申请日：1992-10-09

申请人： Kenji Yamagata ,  Takao Yonehara

发明人： Kenji Yamagata ,  Takao Yonehara

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  H01L31/18 ,  H01L21/76

CPC分类号： H01L21/76256 ,  H01L21/0203 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/76251 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/15

摘要： A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO.sub.2 as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched.

公开(公告)号：US5155058A

公开(公告)日：1992-10-13

申请号：US855498

申请日：1992-03-23

申请人： Shinji Fujiwara ,  Takao Yonehara

发明人： Shinji Fujiwara ,  Takao Yonehara

IPC分类号： H01L21/20 ,  H01L21/822 ,  H01L27/06

CPC分类号： H01L21/8221 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L27/0688

摘要： A semiconductor memory device has plural first transistors constituting an information memory circuit and plural second transistors constituting gate units for controlling information input and output. The plural first transistors and the plural second transistors are formed in mutually overlaying structure across an insulating layer. A heterogeneous material of a nucleation density sufficiently higher than that of the insulating layer and of a size small enough to grow a single nucleus of a semiconductor material is formed on the insulating layer. The transistors positioned on the insulating layer are formed in a monocrystalline or substantially monocrystalline semiconductor layer grown around the single nucleus formed on the different material.

摘要翻译： 半导体存储器件具有构成信息存储电路的多个第一晶体管和构成用于控制信息输入和输出的栅极单元的多个第二晶体管。 多个第一晶体管和多个第二晶体管跨越绝缘层以相互重叠的结构形成。 在绝缘层上形成成核密度足够高于绝缘层的成核密度且尺寸足够小以生长半导体材料的单个核的异质材料。 位于绝缘层上的晶体管形成在形成于不同材料上的单个核周围生长的单晶或基本单晶半导体层中。

公开(公告)号：US5094697A

公开(公告)日：1992-03-10

申请号：US538007

申请日：1990-06-14

申请人： Akiharu Takabayashi ,  Takao Yonehara

发明人： Akiharu Takabayashi ,  Takao Yonehara

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/078 ,  H01L31/18

CPC分类号： H01L21/0262 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/078 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic device comprises a substrate having a plurality of conductive surfaces surrounded by an insulating surface, a plurality of first photovoltaic elements having single-crystal layer regions covering said conductive surfaces, and a second photovoltaic element covering said plurality of first photovoltaic elements.The single-crystal layer regions are separated from each other.

摘要翻译： 光伏器件包括具有由绝缘表面包围的多个导电表面的衬底，具有覆盖所述导电表面的单晶层区域的多个第一光电元件和覆盖所述多个第一光电元件的第二光电元件。 单晶层区域彼此分离。

公开(公告)号：US5013670A

公开(公告)日：1991-05-07

申请号：US523828

申请日：1990-05-15

申请人： Shiro Arikawa ,  Takao Yonehara

发明人： Shiro Arikawa ,  Takao Yonehara

IPC分类号： H01L27/146 ,  H01L21/20 ,  H01L31/0216 ,  H01L31/10 ,  H01L31/11 ,  H01L31/113 ,  H01L31/18 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/3745

CPC分类号： H01L31/02164 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L31/1105 ,  H01L31/1136 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S148/152

摘要： A photoelectric conversion device includes a light transmissive substrate having a deposition surface and a bottom surface. The bottom surface receives light and passes it through the substrate. A heterogeneous deposition surface is formed on the substrate deposition surface and has a nucleation density higher than the nucleation density of the substrate deposition surface. The heterogeneous deposition surface also has an area dimensioned to permit growth of a single nucleus of a single crystal material. A photoelectric conversion collector is formed of the single crystal material grown on the heterogeneous deposition surface. The collector receives light passed through the substrate bottom surface. Photoresponsive transistor elements are formed in and on the collector for outputting a signal corresponding to the light received by the collector through the bottom of the light transmissive substrate. Thus, electrical wiring and transistor elements are formed on the top of the collector, away from the collector surface which receives the light.

摘要翻译： 光电转换装置包括具有沉积表面和底表面的透光基底。 底面接收光并将其通过基板。 在基板沉积表面上形成非均相沉积表面，其成核密度高于基板沉积表面的成核密度。 异质沉积表面还具有尺寸允许单晶材料单核生长的面积。 光电转换收集器由在异质沉积表面上生长的单晶材料形成。 收集器接收通过基板底面的光。 响应晶体管元件形成在集电极上和集电极上，用于输出对应于集电极通过透光基板的底部接收的光的信号。 因此，电接线和晶体管元件形成在集电器的顶部，远离收纳光的集电器表面。

公开(公告)号：US08647923B2

公开(公告)日：2014-02-11

申请号：US13262915

申请日：2010-04-02

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Nobuo Kawase ,  Kenji Nakagawa

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Nobuo Kawase ,  Kenji Nakagawa

IPC分类号： H01L21/00

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/12 ,  H01L24/16 ,  H01L24/90 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73203 ,  H01L2224/90 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

摘要翻译： 一种制造半导体器件的方法包括在第一半导体衬底的表面侧形成多个第一集成电路的步骤; 在形成在设置在第二半导体衬底上的剥离层上的半导体层中形成多个第二集成电路; 键合两个半导体基板，使得电接合部分彼此结合以形成接合结构; 在所述剥离层处将所述第二半导体衬底与所述接合结构分离，以将形成有所述多个第二集成电路的所述半导体层转移到所述第一半导体衬底; 以及切割第一半导体衬底以获得每个包括第一集成电路和第二集成电路的堆叠芯片。

公开(公告)号：US08420501B2

公开(公告)日：2013-04-16

申请号：US12611739

申请日：2009-11-03

申请人： Takao Yonehara ,  Yasuyoshi Takai

发明人： Takao Yonehara ,  Yasuyoshi Takai

IPC分类号： H01L21/52

CPC分类号： H01L33/0079 ,  B41J2/45 ,  H01L21/6835 ,  H01L25/167 ,  H01L27/153 ,  H01L2221/68322 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes arranging a first bonding layer on a first functional region on a first substrate, or a region on a second substrate, bonding the first functional region to the second substrate through the first bonding layer, subjecting a first release layer to a first process to separate the first substrate from the first functional region at the first release layer, arranging a second bonding layer on a second functional region on the first substrate, or a region on a third substrate, bonding the second functional region to the second or third substrate through the second bonding layer, and subjecting a second release layer to a second process to separate the first substrate from the second functional region at the second release layer.

摘要翻译： 一种方法包括：在第一基板上的第一功能区域或第二基板上的区域上布置第一接合层，通过第一接合层将第一功能区域与第二基板接合，使第一释放层进行第一处理 在第一释放层处将第一基板与第一功能区域分开，在第一基板上的第二功能区域或第三基板上的区域上布置第二接合层，将第二功能区域结合到第二或第三基板 通过第二接合层，并且使第二剥离层进行第二工序，以将第一衬底与第二剥离层处的第二功能区分离。

公开(公告)号：US08415230B2

公开(公告)日：2013-04-09

申请号：US13254024

申请日：2010-03-01

申请人： Takao Yonehara ,  Yasuyoshi Takai

发明人： Takao Yonehara ,  Yasuyoshi Takai

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： B41J2/45 ,  H01L21/6835 ,  H01L24/83 ,  H01L33/0079 ,  H01L2221/68359 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00

摘要： Provided is a method for transferring, onto a second substrate, at least one of functional regions arranged and joined to a first separation layer that is disposed on a first substrate and that becomes separable by a treatment, in which regions on the second substrate where the functional regions are to be transferred have a second separation layer that becomes separable by a treatment. The method includes a step of joining the first substrate to the second substrate by bonding such that the functional regions contact the second separation layer; a step of separating the functional regions from the first substrate at the first separation layer; and a step of, before or after the step of separation, forming separation grooves penetrating through the second substrate and the second separation layer from a surface of the second substrate, the surface being opposite to a surface having the second separation layer thereon.

摘要翻译： 提供了一种用于将布置并连接到第一分离层的功能区域中的至少一个转移到第二基板上的方法，第一分离层设置在第一基板上并且通过处理可分离，其中第二基板上的区域 要转移功能区域具有可通过处理分离的第二分离层。 该方法包括通过接合将第一基板接合到第二基板的步骤，使得功能区域接触第二分离层; 在第一分离层处分离功能区域与第一基板的步骤; 以及在分离步骤之前或之后的步骤，从第二基板的表面形成穿过第二基板和第二分离层的分离槽，该表面与其上具有第二分离层的表面相对。