公开(公告)号：US07364805B2

公开(公告)日：2008-04-29

申请号：US10466607

申请日：2002-01-18

申请人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： B32B9/00 ,  B63H1/26 ,  H01L21/31

CPC分类号： H01L21/02538 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265

摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

摘要翻译： 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 晶体层（13）在从下方延伸的每个穿透位错D 1 1的末端具有间隔（13a），（13b）。 穿透位错D 1＆lt; 1＆gt;通过空间（13a），（13b）从上层分离，使得每个穿透位错D 1 1被阻止传播到 上层。 当由汉堡矢量表示的穿透位错D 1 1的位移被保留以产生另一位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变为结晶。

公开(公告)号：US20070285525A1

公开(公告)日：2007-12-13

申请号：US11451524

申请日：2006-06-12

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H04N5/228

CPC分类号： H04N1/6027

摘要： An image forming apparatus according to the invention is characterized by including; an input unit that inputs first color data; a first color converting unit that converts the first color data into a black single color data; a second color converting unit that converts the first color data into second color data; a brightness correcting unit that corrects brightness of the black single color data such that brightness of the black single color data converted by the first color converting unit is equal to brightness of the second color data converted by the second color converting unit; and an image forming unit that prints image data on a recording medium. According to the image forming apparatus, in the image forming apparatus that uses both color conversion processing and black conversion processing, even if image data continuously changes from a chromatic color to an achromatic color, it is possible to reduce “brightness discontinuity”.

摘要翻译： 根据本发明的图像形成装置的特征在于包括： 输入单元，其输入第一颜色数据; 第一颜色转换单元，其将第一颜色数据转换为黑色单色数据; 第二颜色转换单元，其将所述第一颜色数据转换为第二颜色数据; 亮度校正单元，其校正黑色单色数据的亮度，使得由第一颜色转换单元转换的黑色单色数据的亮度等于由第二颜色转换单元转换的第二颜色数据的亮度; 以及在记录介质上打印图像数据的图像形成单元。 根据图像形成装置，在使用颜色转换处理和黑色转换处理的图像形成装置中，即使图像数据从彩色颜色连续变化为无彩色，也可以减少“亮度不连续”。

公开(公告)号：US20070187704A1

公开(公告)日：2007-08-16

申请号：US11691299

申请日：2007-03-26

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method. thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 半导体发光元件，制造方法。 提供集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底，通过不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US07236263B2

公开(公告)日：2007-06-26

申请号：US10259857

申请日：2002-09-30

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H04N1/60 ,  H04N1/40 ,  G06K15/00

CPC分类号： H04N1/6022

摘要： A system and method for processing image data generates color image data from a scanned image, the color image data including RGB data, converts the RGB data to CMY data, and translates the CMY data for the pixel to CMYK data. A weighting coefficient is set for a pixel based on the values of the CMY data for the pixel. A particular region in which the pixel is located is identified as a black color region or a non-black color region. The value of the K data for the pixel is altered based on the weighting coefficient if the particular region is a non-black color region.

摘要翻译： 用于处理图像数据的系统和方法从扫描图像生成彩色图像数据，包括RGB数据的彩色图像数据将RGB数据转换为CMY数据，并将该像素的CMY数据转换为CMYK数据。 基于像素的CMY数据的值为像素设置加权系数。 将像素所位于的特定区域识别为黑色区域或非黑色区域。 如果特定区域是非黑色区域，则基于加权系数改变像素的K数据的值。

公开(公告)号：US20070070466A1

公开(公告)日：2007-03-29

申请号：US11234137

申请日：2005-09-26

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G03F3/08

CPC分类号： H04N1/46 ,  H04N2201/326

摘要： An image forming apparatus includes a color print section configured to make a color printing and a changing section configured to, when color data is printed by the color printer section, allow changing to a subtractive color printing or not according to attribute information.

摘要翻译： 图像形成装置包括：彩色打印部，被配置为进行彩色打印;以及变更部，被配置为当由彩色打印机部打印彩色数据时，根据属性信息允许进行减色打印。

公开(公告)号：US07122825B2

公开(公告)日：2006-10-17

申请号：US11093795

申请日：2005-03-30

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L29/20 ,  H01L31/36

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US20060210290A1

公开(公告)日：2006-09-21

申请号：US11371412

申请日：2006-03-09

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G03G15/00

CPC分类号： G03G15/5025

摘要： An image forming apparatus according to embodiments of the invention includes: a reading unit that reads an image to generate original image data; an image-quality control unit that controls the image quality of the generated original image data; a file generating unit that generates an electronic file containing intermediate image data in an appropriate intermediate stage of the image-quality control and attribute information containing image-quality parameters for the image-quality control; an interface that exchanges the generated electronic file with an external device; and a recording unit that prints the image on the basis of the intermediate image data and the attribute information input from the external device via the interface.

摘要翻译： 根据本发明的实施例的图像形成装置包括：读取单元，其读取图像以生成原始图像数据; 图像质量控制单元，其控制所生成的原始图像数据的图像质量; 文件生成单元，其在图像质量控制的适当的中间阶段生成包含中间图像数据的电子文件，以及包含图像质量控制的图像质量参数的属性信息; 与外部设备交换生成的电子文件的接口; 以及记录单元，其经由所述界面基于所述中间图像数据和从所述外部设备输入的属性信息来打印所述图像。

公开(公告)号：US07002182B2

公开(公告)日：2006-02-21

申请号：US10657467

申请日：2003-09-08

申请人： Hiroyuki Okuyama ,  Goshi Biwa ,  Jun Suzuki

发明人： Hiroyuki Okuyama ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L27/156 ,  H01L33/007 ,  H01L2224/48137

摘要： A semiconductor light emitting device with improved luminous efficiency is provided. An underlying n-type GaN layer is grown on a sapphire substrate, and a growth mask made from SiO2 film or the like is formed on the underlying n-type GaN layer. An n-type GaN layer having a hexagonal pyramid shape is selectively grown on a portion, exposed from an opening of the growth mask, of the underlying n-type GaN layer. The growth mask is removed by etching, and then an active layer and a p-type GaN layer are sequentially grown on the entire substrate so as to cover the hexagonal pyramid shaped n-type GaN layer, to form a light emitting device. An n-side electrode and a p-side electrode are then formed.

摘要翻译： 提供了一种具有改善的发光效率的半导体发光器件。 在蓝宝石衬底上生长下面的n型GaN层，并且在下面的n型GaN层上形成由SiO 2膜等制成的生长掩模。 在下面的n型GaN层的从生长掩模的开口露出的部分上选择性地生长具有六角锥形状的n型GaN层。 通过蚀刻去除生长掩模，然后在整个基板上依次生长活性层和p型GaN层，以覆盖六角锥形的n型GaN层，以形成发光器件。 然后形成n侧电极和p侧电极。

公开(公告)号：US20050221593A1

公开(公告)日：2005-10-06

申请号：US11144565

申请日：2005-06-03

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/44 ,  H01L21/00 ,  C30B23/00 ,  C30B25/00 ,  H01L21/36

CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/06 ,  Y10S438/93 ,  Y10S438/974

摘要： At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active layer selective growth region is kept nearly at a constant value over the entire period of growth of the active layer, to eliminate degradation of characteristics of the device due to a variation in growth rate of the active layer. In particular, the selective growth method is effective in fabrication of a semiconductor light emitting device including a cladding layer, a guide layer, and an active layer, each of which is formed by selective growth, wherein the active layer has multiple quantum wells.

公开(公告)号：US20050179025A1

公开(公告)日：2005-08-18

申请号：US11093885

申请日：2005-03-30

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/06 ,  H01L29/20 ,  H01L31/0304

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。