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    FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES
    81.
    发明申请
    FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 有权
    流动电介质设备和工艺

    公开(公告)号：US20090280650A1

    公开(公告)日：2009-11-12

    申请号：US12210982

    申请日：2008-09-15

    申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

    发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

    IPC分类号： H01L21/31 ,  B08B6/00 ,  C23F1/02 ,  H01L21/311

    CPC分类号： B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/509 ,  H01J37/32449

    摘要： Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.

    摘要翻译： 描述了在衬底上沉积和固化电介质材料的方法。 该方法可以包括以下步骤：提供分隔成第一等离子体区域和第二等离子体区域的处理室，以及将衬底输送到处理室，其中衬底占据第二等离子体区域的一部分。 所述方法可以进一步包括在第一等离子体区域中形成第一等离子体，其中第一等离子体不直接与衬底接触，并将电介质材料沉积在衬底上以形成电介质层。 在电介质材料的沉积中使用由第一等离子体激发的一种或多种反应物。 所述方法可以包括通过在第二等离子体区域中形成第二等离子体来固化介电层，其中从电介质层去除一个或多个含碳物质。

    Method of making an electrostatic chuck with reduced plasma penetration and arcing
    82.
    发明申请
    Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
    制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法

    公开(公告)号：US20090034148A1

    公开(公告)日：2009-02-05

    申请号：US11888327

    申请日：2007-07-31

    申请人： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

    发明人： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

    IPC分类号： H02N13/00

    CPC分类号： H02N13/00 ,  H01L21/6833 ,  Y10T29/49117 ,  Y10T29/49885

    摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

    摘要翻译： 一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。 此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

    Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
    83.
    发明申请
    Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing 有权
    用于提供具有降低的等离子体穿透和电弧放电的静电卡盘的方法和装置

    公开(公告)号：US20090034147A1

    公开(公告)日：2009-02-05

    申请号：US11888311

    申请日：2007-07-31

    申请人： Kadthala Ramaya Narendrnath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky ,  Muhammad Rasheed ,  Tony Kaushal

    发明人： Kadthala Ramaya Narendrnath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky ,  Muhammad Rasheed ,  Tony Kaushal

    IPC分类号： H01L21/683 ,  H01L21/67

    CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

    摘要： A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

    摘要翻译： 一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。 一个实施例包括板和电介质部件，其中介电部件插入板中。 板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。 形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。 在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

    Process for electroless copper deposition
    86.
    发明申请
    Process for electroless copper deposition 有权
    无电镀铜工艺

    公开(公告)号：US20070004201A1

    公开(公告)日：2007-01-04

    申请号：US11385037

    申请日：2006-03-20

    申请人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

    发明人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

    IPC分类号： H01L21/44

    CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1831 ,  C23C18/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76874

    摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

    摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

    Contact plating apparatus
    87.
    发明申请
    Contact plating apparatus 审中-公开
    接触电镀设备

    公开(公告)号：US20060124468A1

    公开(公告)日：2006-06-15

    申请号：US11345011

    申请日：2006-02-01

    申请人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

    发明人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

    IPC分类号： C25D7/12

    CPC分类号： H01L21/2885 ,  C25D17/001

    摘要： Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

    摘要翻译： 本发明的实施例通常提供一种基板处理系统和方法。 衬底处理系统通常包括配置成在其中容纳电镀液的流体池，位于流体池的下部的阳极组件，位于阳极组件上方的横跨流体池的隔离膜，跨过流体定位的扩散构件 在分离膜之上的盆地，以及位于扩散构件上方的横跨流体池的镀膜。 电镀方法通常包括将衬底浸入电镀溶液中，镀敷溶液含有待镀覆的金属离子，与半导体衬底的电镀表面接触镀覆膜，向半导体衬底施加电镀偏压以将金属离子 所述电镀液位于所述基板的电镀面附近，除去所述电镀表面与所述镀膜接触预定的时间，并且将所述电镀表面与所述电镀膜重新接触以继续将所述金属离子电镀到所述电镀表面上。

    Contact plating apparatus
    88.
    发明授权
    Contact plating apparatus 失效

    公开(公告)号：US07025861B2

    公开(公告)日：2006-04-11

    申请号：US10360234

    申请日：2003-02-06

    申请人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

    发明人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

    IPC分类号： C25F3/30 ,  B23H5/06 ,  C25D7/12 ,  C25D5/22

    CPC分类号： H01L21/2885 ,  C25D17/001

    摘要： Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

    Patterned wafer thickness detection system
    89.
    发明申请
    Patterned wafer thickness detection system 审中-公开
    图案化晶圆厚度检测系统

    公开(公告)号：US20060062897A1

    公开(公告)日：2006-03-23

    申请号：US11034349

    申请日：2005-01-11

    申请人： Yuping Gu ,  Manoocher Birang ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Joseph Stevens

    发明人： Yuping Gu ,  Manoocher Birang ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Joseph Stevens

    IPC分类号： B05D3/12

    CPC分类号： G01B11/0683 ,  C23C18/1632 ,  C23C18/1675 ,  G01N21/55 ,  G01N21/9501

    摘要： An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate is provided. In one embodiment, the detected end of an electroless deposition process step is measured while the substrate is rotated relative to the detection mechanism. In another embodiment, a detection mechanism, which is proximate to the processing region, directs electromagnetic radiation onto a substrate surface, which is then reflected by features on the substrate surface and is detected by the detection mechanism. In one aspect, the angle of the directed electromagnetic radiation is perpendicular to the surface of the substrate and the shape of the directed electromagnetic radiation spot is substantially circular in shape. In another aspect, the directed electromagnetic radiation spot is positioned at the center of rotation of the substrate. A controller can be used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.

    摘要翻译： 提供了一种通过将电磁辐射引导到衬底的表面并检测在衬底的表面上被反射的特征的一个或多个波长处的电磁辐射的强度变化来控制无电沉积工艺的装置和方法。 在一个实施例中，在基板相对于检测机构旋转的同时测量无电沉积工艺步骤的检测结束。 在另一个实施例中，靠近处理区域的检测机构将电磁辐射引导到衬底表面上，然后其被衬底表面上的特征反射并被检测机构检测。 一方面，定向电磁辐射的角度垂直于衬底的表面，并且定向电磁辐射光斑的形状基本上是圆形的。 在另一方面，定向电磁辐射光斑位于基底的旋转中心。 控制器可用于通过使用存储的过程值，不同时间收集的数据的比较和各种计算的时间相关数据来监测，存储和/或控制无电沉积过程。